Silicon carbide diamond wire yekucheka muchina 4/6/8/12 inch SiC ingot kugadzirisa

Tsanangudzo Pfupi:

Silicon carbide Diamond Wire yekucheka muchina imhando yemhando yepamusoro-chaiyo yekugadzirisa michina yakatsaurirwa kusilicon carbide (SiC) ingot chidimbu, uchishandisa Diamond Wire Saw tekinoroji, kuburikidza nekumhanya-mhanya kwedhaimani waya (mutsara dhayamita 0.1 ~ 0.3mm) kuSiC ingot yakawanda-waya yekucheka, kuti iwane yakakwirira-chaiyo, yakaderera-yakakuvara gadziriro yewafer. Midziyo yacho inoshandiswa zvakanyanya muSiC simba semiconductor (MOSFET/SBD), radio frequency mudziyo (GaN-on-SiC) uye optoelectronic mudziyo substrate processing, chinhu chakakosha muindasitiri yeSiC indasitiri.

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Kushanda musimboti:

1. Ingot fixation: SiC ingot (4H / 6H-SiC) inogadziriswa pachikuva chekucheka kuburikidza nekugadzirisa kuti ive nechokwadi chekugadzirisa nzvimbo (± 0.02mm).

2. Diamond line kufamba: diamond mutsara (electroplated diamond particles pamusoro pepamusoro) inotungamirirwa nemutungamiri wegumbo rekufambisa kwepamusoro-kutenderera (mutsara wekumhanya 10 ~ 30m / s).

3. Kucheka kudya: iyo ingot inodyiswa pamwe chete negwaro rakagadzirirwa, uye mutsara wedhaimondi unochekwa panguva imwe chete nemitsara yakawanda yakafanana (100 ~ 500 mitsara) kuti iite mawaferi akawanda.

4. Kutonhora uye kubvisa chip: Pfaya inotonhorera (deionized water + additives) munzvimbo yekucheka kuti uderedze kukuvara kwekupisa uye kubvisa machipisi.

Key parameters:

1. Kucheka kukurumidza: 0.2 ~ 1.0mm / min (zvichienderana nekristal direction uye ukobvu hweSiC).

2. Line tension: 20 ~ 50N (yakanyanya kureba nyore kuputsa mutsara, yakaderera inokanganisa kutema kururamisa).

3.Wafer ukobvu: mureza 350 ~ 500μm, chipfuko chinogona kusvika 100μm.

Main features:

(1) Kucheka kururama
Hukobvu kushivirira: ± 5μm (@350μm chimedu), nani pane kwakajairika dhaka kucheka (± 20μm).

Surface roughness: Ra <0.5μm (hapana kuwedzera kukuya kunodiwa kuderedza kuwanda kwekugadzirisa kunotevera).

Warpage: <10μm (kuderedza kuomarara kunotevera polishing).

(2) Kugadzirisa kushanda zvakanaka
Multi-line yekucheka: kucheka 100 ~ 500 zvidimbu panguva, kuwedzera kugadzirwa kwesimba 3 ~ 5 nguva (vs. Single line cut).

Hupenyu hwemutsetse: Mutsetse wedhaimani unogona kucheka 100 ~ 300km SiC (zvichienderana nekuoma kweingot uye kugadzirisa mashandiro).

(3) Yakaderera kukuvara kugadzirisa
Kutsemuka kwemupendero: <15μm (chinyakare kucheka> 50μm), kunatsiridza goho rewafer.

Subsurface kukuvara layer: <5μm (kuderedza kubviswa kwe polishing).

(4) Kuchengetedza kwezvakatipoteredza uye hupfumi
Hapana kusvibiswa kwedhaka: Yakaderedzwa mari yekurasa marara kana ichienzaniswa nekucheka dhaka.

Kushandiswa kwezvinhu: Kucheka kurasikirwa <100μm/ cutter, kuchengetedza SiC mbishi zvinhu.

Cutting effect:

1. Wafer quality: hapana macroscopic cracks pamusoro pepamusoro, zvishoma zvidiki zvidiki zvirema (controllable dislocation extension). Inogona kupinda zvakananga rough polishing link, kupfupisa maitiro ekuyerera.

2. Consistency: kutsauswa kwakakora kwechimedu mubatch <± 3%, yakakodzera kugadzirwa kweotomatiki.

3.Kushandiswa: Tsigira 4H / 6H-SiC ingot yekucheka, inopindirana nemhando ye conductive / semi-insulated.

Technical specification:

Tsanangudzo	Details
Dimensions (L × W × H)	2500x2300x2500 kana gadzirisa
Kugadzira zvinhu saizi renji	4, 6, 8, 10, 12 masendimita esilicon carbide
Kushata kwepamusoro	Ra≤0.3u
Avhareji yekucheka kumhanya	0.3mm/min
Kurema	5.5t
Kucheka maitiro ekugadzirisa matanho	≤30 matanho
Equipment ruzha	≤80 dB
Simbi waya tension	0~110N(0.25 waya tension is 45N)
Simbi waya kumhanya	0~30m/S
Total power	50kw
Diamond waya dhayamita	≥0.18mm
Pedzisa flatness	≤0.05mm
Kucheka uye kuputsa chiyero	≤1% (kunze kwezvikonzero zvevanhu, silicon zvinhu, mutsara, kuchengetedza uye zvimwe zvikonzero)

XKH Services:

XKH inopa iyo yese process sevhisi yesilicon carbide diamond wire yekucheka muchina, kusanganisira kusarudzwa kwemidziyo (waya dhayamita / waya yekumhanyisa matching), kugadzirwa kwemaitiro (kucheka parameter optimization), consumables kupa (dhaimani waya, girodhi vhiri) uye mushure-kutengesa rutsigiro (michina yekugadzirisa, kucheka kwemhando yekuongorora), kubatsira vatengi kuwana goho rakakura (> 95%), yakaderera mutengo weSiC wafer mass production. Inopawo zvigadziriso zvakagadziriswa (zvakadai se-ultra-thin cut, automated loading uye kurodha) ine 4-8 vhiki yekutungamira nguva.