SiCOI wafer 4inch 6inch HPSI SiC SiO2 Si subatrate structure

SiCOI wafer 4inch 6inch HPSI SiC SiO2 Si subatrate chimiro Mufananidzo Wakatariswa

Tsananguro pfupi:

Pepa rino rinopa ruzivo rwakadzama nezvemawafer eSilicon Carbide-on-Insulator (SiCOI), kunyanya kutarisa ma substrates ane 4-inch ne 6-inch ane high-purity semi-insulating (HPSI) silicon carbide (SiC) layers akabatanidzwa pa silicon dioxide (SiO₂) insulating layers pamusoro pe silicon (Si) substrates. Chimiro cheSiCOI chinosanganisa hunhu hwemagetsi, hwekupisa, uye hwemakanika hweSiC nemabhenefiti emagetsi e oxide layer uye rutsigiro rwemakanika rwe silicon substrate. Kushandisa HPSI SiC kunovandudza mashandiro emuchina nekuderedza kufambiswa kwe substrate uye kuderedza kurasikirwa kweparasite, zvichiita kuti mawafer aya ave akakodzera kushandiswa kwe semiconductor ine simba rakawanda, high-frequency, uye high-temperature. Maitiro ekugadzira, hunhu hwezvinhu, uye mabhenefiti echimiro ichi che multilayer anokurukurwa, achisimbisa kukosha kwawo kune power electronics yechizvarwa chinotevera uye microelectromechanical systems (MEMS). Chidzidzo ichi chinoenzanisawo hunhu uye mashandisirwo anogona kuitwa emawafer eSiCOI ane 4-inch ne 6-inch, zvichiratidza kugona kukura uye mukana wekubatanidza michina yepamusoro ye semiconductor.

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Chimiro cheSiCOI wafer

HPB (High-Performance Bonding) BIC (Bonded Integrated Circuit) uye SOD (Silicon-on-Diamond kana Silicon-on-Insulator-like technology). Inosanganisira:

Zviyero zveMashandiro:

Inonyora ma parameter akaita sekururama, mhando dzezvikanganiso (semuenzaniso, "Hapana kukanganisa," "Kureba kwekukosha"), uye kuyera ukobvu (semuenzaniso, "Kukosha kweDirect-Layer/kg").

Tafura ine nhamba (zvichida yekuedza kana ma process parameters) pasi pemisoro yakaita se "ADDR/SYGBDT," "10/0," nezvimwewo.

Data reKukora kweLayer:

Zvinyorwa zvakawanda zvinodzokororwa zvakanyorwa kuti "L1 Thickness (A)" kusvika ku "L270 Thickness (A)" (zvichida muÅngströms, 1 Å = 0.1 nm).

Inoratidza chimiro chine zvidimbu zvakawanda chine hukobvu hwakakodzera hwechikamu chimwe nechimwe, chinowanzoitwa mumawafer emhando yepamusoro e semiconductor.

Chimiro cheSiCOI Wafer

SiCOI (Silicon Carbide on Insulator) imhando yewafer yakagadzirwa neunyanzvi inosanganisa silicon carbide (SiC) neinsulating layer, yakafanana neSOI (Silicon-on-Insulator) asi yakagadzirirwa kushandiswa nesimba guru/kupisa kwakanyanya. Zvinhu zvikuru:

Kuumbwa kwezvikamu:

Chigadziko Chepamusoro: Single-crystal Silicon Carbide (SiC) yekufambisa maerekitironi akawanda uye kugadzikana kwekupisa.

Mudziyo wekudzivirira wakavigwa: Kazhinji SiO₂ (oxide) kana dhaimani (muSOD) kuderedza kugona kwezvipembenene uye kuvandudza kupatsanurwa.

Substrate yeBase: Silicon kana polycrystalline SiC yekutsigira michina

Hunhu hweSiCOI wafer

Zvivakwa zveMagetsi Bandgap Yakafara (3.2 eV ye4H-SiC):Inogonesa voltage yakanyanya kupwanyika (>10× yakakwira kupfuura silicon).Inoderedza kudonha kwemvura, ichivandudza kushanda zvakanaka kwemidziyo yemagetsi.

Kufamba Kwemaerekitironi Akawanda:~900 cm²/V·s (4H-SiC) zvichienzaniswa ne ~1,400 cm²/V·s (Si), asi kushanda zvakanaka kwemunhandare yepamusoro.

Kusakwanisa Kurwisa Zvishoma:Matransistors akavakirwa paSiCOI (semuenzaniso, maMOSFET) anoratidza kurasikirwa kwakaderera kwekufambisa.

Kudzivirira Kwakanaka Kwazvo:Iyo yakavigwa oxide (SiO₂) kana kuti dhaimani layer inoderedza kugona kweparasitic uye crosstalk.

Zvivakwa zvekupisaKufambisa Kwekupisa Kwakanyanya: SiC (~490 W/m·K ye4H-SiC) vs. Si (~150 W/m·K). Dhaimondi (kana ikashandiswa sechinodzivirira) inogona kudarika 2,000 W/m·K, zvichiwedzera kupisa.

Kugadzikana kwekupisa:Inoshanda zvakavimbika pa >300°C (zvichienzaniswa ne ~150°C yesilicon). Inoderedza zvinodiwa zvekutonhodza mumagetsi emagetsi.

3. Hunhu hweMakanika neMakemikoroKuomarara Kwakanyanya (~9.5 Mohs): Kunodzivirira kusakara, zvichiita kuti SiCOI igare kwenguva refu munzvimbo dzakaoma.

Kusashanda kweKemikari:Inodzivirira oxidation uye ngura, kunyangwe mumamiriro eacidic/alkaline.

Kuwedzera Kunopisa Kushoma:Inoenderana zvakanaka nezvimwe zvinhu zvinopisa zvakanyanya (semuenzaniso, GaN).

4. Mabhenefiti eMaumbirwo (zvichienzaniswa neBulk SiC kana SOI)

Kurasikirwa Kwepasi Pasi Kunoderedzwa:Chidzitiro chekudzivirira kupisa chinodzivirira kubuda kwemvura mu substrate.

Kuvandudzwa kweRF Performance:Kukwanisa kushandisa parasitic capacitance yakaderera kunoita kuti pave nekuchinja nekukurumidza (zvinobatsira pamidziyo ye5G/mmWave).

Dhizaini Inochinjika:Chikamu chepamusoro cheSiC chakatetepa chinobvumira kukwidziridzwa kwemidziyo kwakagadziriswa (semuenzaniso, nzira dzakatetepa zvakanyanya muma transistors).

Kuenzanisa neSOI neBulk SiC

Pfuma	SiCOI	SOI (Si/SiO₂/Si)	SiC yakawanda
Bhandiji	3.2 eV (SiC)	1.1 eV (Si)	3.2 eV (SiC)
Kufambisa kwekupisa	Yakakwirira (SiC + dhaimani)	Yakaderera (SiO₂ inoderedza kuyerera kwekupisa)	Yakakwira (SiC chete)
Kuparara kweVoltage	Yakakwirira Zvikuru	Zviri pakati nepakati	Yakakwirira Zvikuru
Mutengo	Yepamusoro	Zasi	Yepamusoro-soro (SiC yakachena)

Mashandisirwo eSiCOI wafer

Magetsi Emagetsi
Mawafer eSiCOI anoshandiswa zvakanyanya mumidziyo ine simba guru uye ine simba guru seMOSFETs, Schottky diodes, uye power switches. Kureba kwebandgap uye high breakdown voltage yeSiC zvinoita kuti simba rishande zvakanaka uye kurasikirwa kwakaderera uye kushanda kwekupisa kuwedzere.

Zvishandiso zveRadio Frequency (RF)
Chidziviriro chekudzivirira kupisa chiri muSiCOI wafers chinoderedza kugona kwezvipembenene, zvichiita kuti zvikwanise kushandiswa nema transistors ane frequency yakakwira uye ma amplifiers anoshandiswa mukutaurirana, radar, uye tekinoroji ye5G.

Masisitimu eMicroelectromechanical (MEMS)
Mawafer eSiCOI anopa puratifomu yakasimba yekugadzira masensa eMEMS nema actuator anoshanda zvakavimbika munzvimbo dzakaoma nekuda kwekusashanda zvakanaka kwemakemikari eSiC uye simba remakanika.

Zvigadzirwa zvemagetsi zvinopisa zvakanyanya
SiCOI inogonesa magetsi anochengetedza mashandiro uye kuvimbika pakupisa kwakakwira, zvichibatsira mota, ndege, uye mashandisirwo emaindasitiri uko zvishandiso zve silicon zvechinyakare zvinokundikana.

Midziyo yePhotonic neOptoelectronic
Kubatanidzwa kwezvimiro zveSiC zve optical uye insulating layer zvinoita kuti zvive nyore kubatanidzwa kwema photonic circuits pamwe nekuwedzera kwekutonga kwekupisa.

Zvigadzirwa zvemagetsi zvakaomeswa nemwaranzi
Nekuda kwekutsungirira kwakajairika kwemwaranzi yeSiC, mawafer eSiCOI akakodzera kushandiswa muchadenga uye munyukireya zvinoda michina inotsungirira nharaunda dzine mwaranzi yakawanda.

Mibvunzo neMhinduro zveSiCOI wafer

Mubvunzo 1: Chii chinonzi wafer yeSiCOI?

A: SiCOI inomirira Silicon Carbide-on-Insulator. Imhando ye semiconductor wafer umo jira rakatetepa resilicon carbide (SiC) rinosungirirwa pane jira rinodzivirira kupisa (kazhinji silicon dioxide, SiO₂), iro rinotsigirwa nesilicon substrate. Chimiro ichi chinosanganisa hunhu hwakanaka hweSiC nekuparadzaniswa kwemagetsi kubva kune insulator.

Mubvunzo wechipiri: Ndezvipi zvakanakira zvikuru zveSiCOI wafers?

A: Zvakanakira zvikuru zvinosanganisira voltage yakanyanya kukanganiswa, gap yakafara, kupisa kwakanaka kwazvo, kuomarara kwakanyanya kwemakanika, uye kudzikira kwesimba rezvipembenene nekuda kwechikamu chinodzivirira kupisa. Izvi zvinotungamira mukuvandudzwa kwekushanda kwemuchina, kushanda zvakanaka, uye kuvimbika.

Mubvunzo wechitatu: Ndezvipi zvinoshandiswa pakugadzira mawafer eSiCOI?

A: Dzinoshandiswa mumagetsi ane simba, zvishandiso zveRF zvine frequency yakakwira, masensa eMEMS, magetsi ane tembiricha yakakwira, zvishandiso zvephotonic, uye magetsi akaomeswa nemwaranzi.