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SICOI (Silicon Carbide iri paInsulator) Wafers SiC Firimu paSilicon

SICOI (Silicon Carbide iri paInsulator) Wafers SiC Firimu ON Silicon Mufananidzo Wakaratidzwa
  • SICOI (Silicon Carbide iri paInsulator) Wafers SiC Firimu paSilicon
  • SICOI (Silicon Carbide iri paInsulator) Wafers SiC Firimu paSilicon
  • SICOI (Silicon Carbide iri paInsulator) Wafers SiC Firimu paSilicon

Tsananguro pfupi:

Mawafer eSilicon Carbide on Insulator (SICOI) imhando inotevera ye semiconductor substrates inobatanidza hunhu hwepamusoro hwe physical uye electronic hwesilicon carbide (SiC) nehunhu hwakanaka hwe electrical isolation hwe insulating buffer layer, senge silicon dioxide (SiO₂) kana silicon nitride (Si₃N₄). Wafer yakajairika yeSCOI ine thin epitaxial SiC layer, intermediate insulating film, uye supporting base substrate, iyo inogona kuva silicon kana SiC.


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Dhayagiramu Yakadzama

SICOI 11_副本
SICOI 14_副本2

Kuunzwa kwemawafer eSilicon Carbide on Insulator (SICOI)

Mawafer eSilicon Carbide on Insulator (SICOI) imhando inotevera ye semiconductor substrates inobatanidza hunhu hwepamusoro hwe physical uye electronic hwesilicon carbide (SiC) nehunhu hwakanaka hwe electrical isolation hwe insulating buffer layer, senge silicon dioxide (SiO₂) kana silicon nitride (Si₃N₄). Wafer yakajairika yeSCOI ine thin epitaxial SiC layer, intermediate insulating film, uye supporting base substrate, iyo inogona kuva silicon kana SiC.

Chimiro ichi chehybrid chakagadzirwa kuti chisangane nezvinodiwa zvakasimba zvemidziyo yemagetsi ine simba guru, frequency yakakwira, uye tembiricha yakakwira. Nekushandisa layer inodzivira kupisa, mawafer eSICOI anoderedza kugona kwezvipembenene uye anodzvinyirira kubuda kwemvura, nokudaro zvichiita kuti mafrequency ekushanda akwire, kushanda zvakanaka, uye kuvandudzwa kwekutonga kwekupisa. Mabhenefiti aya anoita kuti ave akakosha zvikuru muzvikamu zvakaita semotokari dzemagetsi, 5G telecommunication infrastructure, aerospace systems, advanced RF electronics, uye MEMS sensor technologies.

Nheyo yekugadzirwa kweSICOI Wafers

Mawafer eSICOI (Silicon Carbide on Insulator) anogadzirwa kuburikidza nedhiziri yepamusoromaitiro ekubatanidza wafer uye kutetepa:

  1. Kukura kweSiC Substrate– Wafer yemhando yepamusoro yeSiC (4H/6H) inogadzirwa sechinhu chinopihwa.

  2. Kuisa Dzimba Dzinodzivirira– Firimu rinodzivirira kupisa (SiO₂ kana Si₃N₄) rinoumbwa pawafer inotakurika (Si kana SiC).

  3. Kusunga Wafer– SiC wafer necarrier wafer zvinobatanidzwa pamwe chete kana paine tembiricha yakakwira kana rubatsiro rweplasma.

  4. Kutetepa & Kupukuta– SiC donor wafer inoderedzwa kuita ma micrometer mashoma uye inokwenenzverwa kuti ive pamusoro wakatsetseka weatomu.

  5. Kuongorora Kwekupedzisira– Wafer yeSICOI yakapedzwa inoedzwa kuti ione kana yakakora zvakafanana, kuti pamusoro payo pakakombama, uye kuti inodziisa sei.

Kuburikidza nemaitiro aya, arukoko rutete rweSiC runoshandaine hunhu hwakanaka hwemagetsi nekupisa inosanganiswa nefirimu rinodzivirira kupisa uye substrate inotsigira, zvichigadzira chikuva chinoshanda zvakanaka chemagetsi echizvarwa chinotevera nemidziyo yeRF.

SiCOI

Mabhenefiti Akakosha eSICOI Wafers

Chikamu Chezvinhu Hunhu hwehunyanzvi Mabhenefiti Akakosha
Maumbirwo Ezvinhu 4H/6H-SiC active layer + insulating film (SiO₂/Si₃N₄) + Si kana SiC carrier Inoita kuti magetsi asapararire zvakanyanya, inoderedza kupindira kwezvipembenene
Zvivakwa zveMagetsi Simba guru rekupwanyika (>3 MV/cm), kurasikirwa kwakaderera kwe dielectric Yakagadzirirwa kushanda kwemagetsi akawanda uye mafrequency akawanda
Zvivakwa zvekupisa Kupisa kwemhepo kunosvika 4.9 W/cm·K, kwakagadzikana pamusoro pe500°C Kupisa kunoshanda, kushanda zvakanaka pasi pemitoro yekupisa yakaoma
Zvivakwa zveMichina Kuoma kwakanyanya (Mohs 9.5), chiyero chidiki chekuwedzera kwekupisa Yakasimba pakurwisa kushushikana, inowedzera hupenyu hwemuchina
Hunhu hwepamusoro Nzvimbo yakapfava zvikuru (Ra <0.2 nm) Inosimudzira epitaxy isina kukanganisa uye kugadzira michina yakavimbika
Kudzivirira kupisa Kuramba kwesimba >10¹⁴ Ω·cm, kudonha kwesimba kwakaderera Kushanda kwakavimbika muRF uye mashandisirwo ekudzivirira emagetsi akakwira
Saizi & Kugadzirisa Inowanikwa mumhando dze4, 6, uye 8-inch; SiC ukobvu 1–100 μm; insulation 0.1–10 μm Dhizaini inochinjika yezvinodiwa zvakasiyana zvekushandisa

 

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Nzvimbo Dzekushandisa Dzinokosha

Chikamu Chekushandisa Nyaya Dzekushandisa Dzakajairika Zvakanakira Kushanda
Magetsi Emagetsi Ma inverter emagetsi, nzvimbo dzekuchaja, zvishandiso zvemagetsi zvemaindasitiri Kuparara kwakanyanya kwemagetsi, kurasikirwa kwekuchinja kwakaderera
RF & 5G Zvigadziriso zvesimba zvechiteshi chepasi, zvikamu zvemamirimita-mafungu Zvipembenene zvishoma, zvinotsigira mashandiro eGHz-range
Masensa eMEMS Masensa ekumanikidzwa kwezvakatipoteredza akaomarara, MEMS yemhando yekufamba Kugadzikana kwakanyanya kwekupisa, kunodzivirira mwaranzi
Ndege neDziviriro Kutaurirana kwesatellite, mamodule emagetsi e avionics Kuvimbika kana tembiricha yakanyanyisa uye kuratidzwa nemwaranzi
Giridhi Rakangwara Zvishanduri zveHVDC, ma solid-state circuit breakers Kudzivirira kwakanyanya kunoderedza kurasikirwa kwesimba
Zvemagetsi zveOptoelectronics Ma LED eUV, ma substrates elaser Hunhu hwepamusoro hwekristaro hunotsigira kuburitswa kwechiedza zvinobudirira

Kugadzirwa kwe4H-SiCOI

Kugadzirwa kwemawafer e4H-SiCOI kunowanikwa kuburikidzamaitiro ekubatanidza wafer uye kutetepa, zvichigonesa mainterface ekudzivirira kupisa emhando yepamusoro uye ma layers anoshanda eSiC asina kukanganisa.

  • a: Chimiro chekugadzirwa kwepuratifomu yezvinhu zve4H-SiCOI.

  • b: Mufananidzo wewafer ye4-inch 4H-SiCOI uchishandisa bonding uye thinning; nzvimbo dzakaremara dzakanyorwa.

  • c: Kurongeka kwakafanana kwekukora kwe 4H-SiCOI substrate.

  • dMufananidzo wedhiziri re4H-SiCOI.

  • e: Kufamba kwemaitirwo ekugadzira resonator yeSiC microdisk.

  • f: SEM ye microdisk resonator yakapedzwa.

  • g: SEM yakakura inoratidza divi re resonator; mufananidzo weAFM unoratidza kutsetseka kwenzvimbo ine masero madiki.

  • h: SEM ine chikamu chakachinjika ichiratidza pamusoro pechinhu chakaita separabolic.

Mibvunzo Inowanzo bvunzwa nezve SICOI Wafers

Mubvunzo wekutanga: Ndezvipi zvakanakira mawafer eSICOI pane mawafer echinyakare eSiC?
A1: Kusiyana nemidziyo yeSiC yakajairwa, mawafer eSICOI ane layer inodzikisa simba rekudzivirira zvipembenene uye kudonha kwemvura, zvichiita kuti pave nekushanda kwakasimba, mhinduro iri nani yefrequency, uye kushanda kwekupisa kwakanyanya.

Mubvunzo wechipiri: Ndeapi saizi dzewafer dzinowanzo kuwanikwa?
A2: Mawafer eSICOI anowanzo kugadzirwa mumhando dze 4-inch, 6-inch, uye 8-inch, ane SiC yakagadzirwa uye ukobvu hwe layer inodziisa hunowanikwa zvichienderana nezvinodiwa nemudziyo.

Mubvunzo wechitatu: Ndeapi maindasitiri anonyanya kubatsirwa nemawafer eSICOI?
A3: Maindasitiri makuru anosanganisira magetsi emagetsi emotokari dzemagetsi, magetsi eRF e5G network, MEMS yemasensa emuchadenga, uye maoptoelectronics akadai semaUV LED.

Mubvunzo wechina: Ko chidziviriro chekudzivirira chinovandudza sei mashandiro emudziyo?
A4: Firimu rekudzivirira kupisa (SiO₂ kana Si₃N₄) rinodzivirira kubuda kwemagetsi uye rinoderedza kutaura kwemagetsi, zvichiita kuti magetsi agare kwenguva refu, kuchinja zvakanaka, uye kuderedza kurasikirwa nekupisa.

Mubvunzo wechishanu: Mawafer eSICOI akakodzera kushandiswa pakupisa kwakanyanya here?
A5: Ehe, nekupisa kwakanyanya uye kuramba kupisa kupfuura 500°C, mawafer eSICOI akagadzirwa kuti ashande zvakanaka pasi pekupisa kwakanyanya uye munzvimbo dzakaoma.

Mubvunzo wechitanhatu: Mawafer eSICOI anogona kugadziriswa here?
A6: Zvechokwadi. Vagadziri vanopa magadzirirwo akagadzirirwa ukobvu hwakasiyana, huwandu hwedoping, uye musanganiswa we substrate kuti isangane nezvinodiwa zvakasiyana-siyana zvekutsvagisa uye zvemaindasitiri.

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