SiC substrate Dia200mm 4H-N uye HPSI Silicon carbide

Tsanangudzo Pfupi:

Silicon carbide substrate (SiC wafer) ndeye yakakura-bandgap semiconductor zvinhu zvine zvakanakisa zvemuviri uye zvemakemikari zvimiro, kunyanya zvakatanhamara mukupisa kwepamusoro-soro, kukwira-frequency, masimba epamusoro, uye nharaunda dzeradiation. 4H-V imwe yecrystalline zvimiro zvesilicon carbide. Pamusoro pezvo, maSiC substrates ane yakanaka thermal conductivity, izvo zvinoreva kuti vanogona kunyatsobvisa kupisa kunoitwa nemidziyo panguva yekushanda, zvichiwedzera kuwedzera kuvimbika uye hupenyu hwezvishandiso.

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4H-N uye HPSI is a polytype yesilicon carbide (SiC), ine crystal lattice chimiro chine hexagonal units inoumbwa nekabhoni ina nemaatomu mana emasilicon. Ichi chimiro chinopa izvo zvinhu neakanakisa erekitironi kufamba uye kuparara kwemagetsi maitiro. Pakati pese SiC polytypes, 4H-N uye HPSI inoshandiswa zvakanyanya mumunda wemagetsi emagetsi nekuda kwekuenzanisa kwayo erekitironi uye kufamba kwegomba uye yakakwirira yekupisa yekupisa.

Kubuda kwe8inch SiC substrates inomiririra kufambira mberi kwakakosha kweindasitiri yemagetsi semiconductor. Zvechinyakare silicon-based semiconductor zvinhu zvinowana kudonha kwakakosha mukuita pasi pemamiriro akanyanya akadai setembiricha yakakwira uye yakakwirira voltages, nepo SiC substrates inogona kuchengetedza kuita kwavo kwakanaka. Zvichienzaniswa nediki substrates, 8inch SiC substrates inopa yakakura-chidimbu chekugadzirisa nzvimbo, iyo inodudzira kune yakakwira kugadzirwa kwekuita uye kuderera mutengo, yakakosha pakufambisa nzira yekushambadzira yeSiC tekinoroji.

Iyo tekinoroji yekukura ye8inch silicon carbide (SiC) substrates inoda yakanyanya kujeka uye kuchena. Hunhu hweiyo substrate hunokanganisa zvakananga mashandiro ezvishandiso zvinotevera, saka vagadziri vanofanirwa kushandisa matekinoroji epamberi kuti vaone kukwana kwekristaro uye kuderera kwehurema hwema substrates. Izvi zvinowanzo sanganisira yakaoma makemikari vapor deposition (CVD) maitiro uye chaiyo yekristaro kukura uye kucheka maitiro. 4H-N uye HPSI SiC substrates inonyanya kushandiswa mumunda wemagetsi emagetsi, senge mune yakakwirira-inoshanda magetsi ekushandura, traction inverters yemotokari dzemagetsi, uye renewable simba masisitimu.

Tinogona kupa 4H-N 8inch SiC substrate, mamakisi akasiyana e substrate stock wafers. Tinogonawo kuronga customization maererano nezvido zvako. Welcome kubvunza!