SiC crystal yekukura choto SiC Ingot inokura 4inch 6inch 8inch PTV Lely TSSG LPE nzira yekukura

Tsanangudzo Pfupi

Silicon carbide (SiC) kukura kwekristaro inhanho yakakosha mukugadzirira kwepamusoro-kuita semiconductor zvinhu. Pamusana pekunyungudika kwepamusoro kweSiC (inenge 2700 ° C) uye yakaoma polytypic chimiro (eg 4H-SiC, 6H-SiC), teknolojia yekukura kwekristaro ine dambudziko guru rekuoma. Parizvino, nzira huru dzekukura dzinosanganisira nzira yekufambisa mhute yemuviri (PTV), nzira yeLely, nzira yekukura kwembeu yemhando yepamusoro (TSSG) uye nzira yemvura epitaxy (LPE). Imwe neimwe nzira ine zvayakanakira nezvayakaipira uye yakakodzera kune akasiyana maapplication zvinodiwa.

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Main crystal kukura nzira uye maitiro avo

(1) Physical Vapor Transfer Method (PTV)
Nheyo: Pakupisa kwakanyanya, iyo SiC mbishi zvinhu inodzika muchikamu chegasi, icho chinobva chadzokororwa pakristaro yembeu.
Main features:
Kukura kwekushisa kwepamusoro (2000-2500 ° C).
Hunhu hwepamusoro, saizi hombe 4H-SiC uye 6H-SiC makristasi anogona kukura.
Kukura kwekukura kunononoka, asi kristall quality yakakwirira.
Chikumbiro: Inonyanya kushandiswa musimba semiconductor, RF zvishandiso uye mamwe epamusoro-magumo minda.

(2) Lely nzira
Musimboti: Makristasi anorimwa nekuzvimiririra sublimation uye recrystallization yeSiC hupfu pakupisa kwakanyanya.
Main features:
Iyo nzira yekukura haidi mbeu, uye saizi yekristaro idiki.
Unhu hwekristaro hwakakwirira, asi kubudirira kwekukura kwakaderera.
Inokodzera kutsvagisa marabhoritari uye diki kugadzirwa kwebatch.
Chishandiso: Inonyanya kushandiswa mukutsvaga kwesainzi uye kugadzirira kwediki saizi SiC makristasi.

(3) Yepamusoro Mbeu mhinduro yekukura Nzira (TSSG)
Nheyo: Mumushonga wepamusoro-tembiricha, iyo SiC mbishi zvinhu inonyungudika uye inopenya pakristaro yembeu.
Main features:
Iyo tembiricha yekukura yakaderera (1500-1800 ° C).
Yemhando yepamusoro, yakaderera kuremara SiC makristasi anogona kukura.
Chiyero chekukura chinononoka, asi kufanana kwekristaro kwakanaka.
Chishandiso: Inokodzera kugadzirira kwemhando yepamusoro SiC makristasi, senge optoelectronic zvishandiso.

(4) Liquid Phase epitaxy (LPE)
Nheyo: Mumvura simbi mhinduro, SiC mbishi zvinhu epitaxial kukura pane substrate.
Main features:
Iyo tembiricha yekukura yakaderera (1000-1500 ° C).
Kukurumidza kukura, kwakakodzera kukura kwefirimu.
Unhu hwekristaro hwakakwirira, asi ukobvu hushoma.
Chishandiso: Inonyanya kushandiswa epitaxial kukura kweSiC mafirimu, senge sensors uye optoelectronic zvishandiso.

Nzira huru dzekushandisa dzesilicon carbide crystal furnace

SiC crystal furnace ndiyo yakakosha midziyo yekugadzirira sic makristasi, uye nzira dzayo huru dzekushandisa dzinosanganisira:
Simba semiconductor mudziyo kugadzira: Inoshandiswa kukura-yemhando yepamusoro 4H-SiC uye 6H-SiC makristasi se substrate zvinhu zvemagetsi zvishandiso (senge MOSFETs, diode).
Zvishandiso: mota dzemagetsi, photovoltaic inverters, maindasitiri emagetsi emagetsi, nezvimwe.

Rf dhizaini kugadzira: Inoshandiswa kukura yakaderera-yakaremara SiC makristasi se substrates yeRF zvishandiso kuti isangane nepamusoro-frequency zvinodiwa zve5G kutaurirana, radar uye setiraiti kutaurirana.

Kugadzirwa kweOptoelectronic mudziyo: Inoshandiswa kurima emhando yepamusoro SiC makristasi se substrate zvinhu zve led, ultraviolet detectors uye lasers.

Tsvagiridzo yeSainzi uye diki batch kugadzirwa: yekutsvagisa marabhoritari uye kuvandudzwa kwezvinhu zvitsva kutsigira hunyanzvi uye optimization yeSiC crystal yekukura tekinoroji.

Yepamusoro tembiricha yekugadzira mudziyo: Inoshandiswa kukura yakakwira tembiricha inopesana neSiC makristasi seyakadzika zvinhu zveaerospace uye yakakwirira tembiricha sensors.

SiC choto midziyo uye masevhisi anopihwa nekambani

XKH inotarisa mukusimudzira uye kugadzira kweSIC crystal furnace midziyo, ichipa anotevera masevhisi:

Customized midziyo: XKH inopa yakagadziridzwa mavira ekukura ane akasiyana nzira dzekukura sePTV neTSSG zvinoenderana nezvinodiwa nevatengi.

Tsigiro yehunyanzvi: XKH inopa vatengi nerutsigiro rwehunyanzvi hwekuita kwese kubva kukristaro yekukura process optimization kusvika kugadziriso yemidziyo.

Masevhisi ekudzidzisa: XKH inopa kudzidziswa kwekushanda uye nhungamiro yehunyanzvi kune vatengi kuti vaone kushanda kwakanaka kwemidziyo.

Mushure mekutengesa sevhisi: XKH inopa nekukurumidza-mhinduro mushure mekutengesa-sevhisi uye kusimudzira kwemidziyo kuti ive nechokwadi chekuenderera kwekugadzirwa kwevatengi.

Silicon carbide crystal kukura tekinoroji (yakadai sePTV, Lely, TSSG, LPE) ine zvakakosha zvekushandisa mumunda wemagetsi emagetsi, RF zvishandiso uye optoelectronics. XKH inopa epamberi SiC choto midziyo uye yakazara yakazara masevhisi ekutsigira vatengi muhukuru-hukuru kugadzirwa kwemhando yepamusoro makristasi eSiC uye kubatsira kusimudzira indasitiri yesemiconductor.