SiC Ingot 4H mhando Dia 4inch 6inch Ukobvu 5-10mm Tsvagiridzo / Dummy Giredhi

Tsananguro pfupi:

Silicon Carbide (SiC) yave chinhu chakakosha mukushandiswa kwemagetsi epamusoro uye optoelectronic nekuda kwehunhu hwayo hwepamusoro hwemagetsi, kupisa, uye michina. Iyo 4H-SiC Ingot, inowanikwa mudhayamita ye 4-inch uye 6-inch ine ukobvu hwe 5-10 mm, chigadzirwa chekutanga chekutsvaga nekugadzira kana sechinhu chemhando yepamusoro. Iyi ingot yakagadzirirwa kupa vaongorori nevagadziri ma substrates emhando yepamusoro eSiC akakodzera kugadzirwa kwemidziyo yemuenzaniso, zvidzidzo zvekuyedza, kana maitiro ekuenzanisa uye ekuyedza. Nechimiro chayo chakasiyana chekristaro chehexagonal, iyo ingot ye 4H-SiC inopa kushanda kwakakura mumagetsi emagetsi, zvishandiso zve high-frequency, uye masisitimu anodzivirira mwaranzi.

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Zvivakwa

1. Maumbirwo eKristaro uye Kurongeka
Polytype: 4H (chimiro chehexagonal)
Zvimisikidzo zveLattice:
a = 3.073 Å
c = 10.053 Å
Kutungamira: Kazhinji [0001] (C-plane), asi mamwe maitiro akadai se [11\overline{2}0] (A-plane) anowanikwawo kana akumbirwa.

2. Zviyero zvemuviri
Dhayamita:
Sarudzo dzakajairika: 4 inches (100 mm) uye 6 inches (150 mm)
Ukobvu:
Inowanikwa muhukuru hwe5-10 mm, inogona kugadziriswa zvichienderana nezvinodiwa zvekushandisa.

3. Zvivakwa zveMagetsi
Rudzi rweDoping: Runowanikwa mu intrinsic (semi-insulating), n-type (doped with nitrogen), kana p-type (doped with aluminum or boron).

4. Hunhu hwekupisa uye hwemakanika
Kufambisa kwekupisa: 3.5-4.9 W/cm·K patembiricha yemumba, zvichiita kuti kupisa kuparare zvakanaka.
Kuoma: Mohs scale 9, zvichiita kuti SiC ive yechipiri kune dhaimani pakuoma.

Paramita	Zvidimbu	Chikamu
Nzira Yekukura	PVT (Kutakura Utsi Hwemuviri)
Dhayamita	50.8 ± 0.5 / 76.2 ± 0.5 / 100.0 ± 0.5 / 150 ± 0.5	mm
Mhando yePolytype	4H / 6H (50.8 mm), 4H (76.2 mm, 100.0 mm, 150 mm)
Kutarisa Pamusoro	0.0˚ / 4.0˚ / 8.0˚ ± 0.5˚ (50.8 mm), 4.0˚ ± 0.5˚ (zvimwe)	dhigirii
Rudzi	N-rudzi
Ukobvu	5-10 / 10-15 / >15	mm
Kutungamira Kwakatsetseka Kwepakutanga	(10-10) ± 5.0˚	dhigirii
Hurefu Hwepamusoro-soro	15.9 ± 2.0 (50.8 mm), 22.0 ± 3.5 (76.2 mm), 32.5 ± 2.0 (100.0 mm), 47.5 ± 2.5 (150 mm)	mm
Kudzidziswa kwechipiri kwakadzikama	90˚ CCW kubva pakutungamira ± 5.0˚	dhigirii
Kureba Kwechipiri Kwakatsetseka	8.0 ± 2.0 (50.8 mm), 11.2 ± 2.0 (76.2 mm), 18.0 ± 2.0 (100.0 mm), Hapana (150 mm)	mm
Giredhi	Tsvagiridzo / Dummy

Mashandisirwo

1. Tsvagiridzo neKuvandudza

Iyo ingot yegiredhi rekutsvaga re4H-SiC yakanakira marabhoritari edzidzo nemaindasitiri akatarisana nekugadzirwa kwemidziyo yakavakirwa paSiC. Hunhu hwayo hwepamusoro hwekristaro hunoita kuti kuyedzerwe kwakanyatsojeka pahunhu hweSiC, senge:
Zvidzidzo zvekufamba kwemutakurwi.
Maitiro ekugadzirisa nekudzikamisa zvikanganiso.
Kugadzirisa maitiro ekukura kwe epitaxial.

2. Dummy Substrate
Ingot yemhando yepamusoro inoshandiswa zvakanyanya mukuyedza, kugadzirisa, uye kuita mapurojekiti ekugadzira. Iyi inzira inoshanda zvishoma pane:
Kuongororwa kwema parameter ekushanda muChemical Vapor Deposition (CVD) kana Physical Vapor Deposition (PVD).
Kuongorora maitiro ekucheka nekupukuta munzvimbo dzekugadzira.

3. Magetsi Emagetsi
Nekuda kwekusakwanisa kwayo kupinza magetsi zvakanyanya uye kufambisa magetsi zvakanyanya, 4H-SiC inzvimbo yakakosha yemagetsi emagetsi, akadai se:
MaMOSFET ane simba guru.
MaDiode eSchottky Barrier (SBDs).
Matransistori eJunction Field-Effect (JFETs).
Mashandisirwo anosanganisira ma inverter emotokari emagetsi, ma inverter ezuva, uye ma smart grids.

4. Zvishandiso Zvinoshandisa Kakawanda
Kufamba kwemaerekitironi akawanda uye kurasikirwa kwakaderera kwesimba remagetsi kunoita kuti zvive zvakakodzera kune:
Matransistori eRadio Frequency (RF).
Masisitimu ekutaurirana asina waya, kusanganisira zvivakwa zve5G.
Zvishandiso zvemuchadenga nezvokudzivirira zvinoda masisitimu eradar.

5. Masisitimu Anodzivirira Mwaranzi
Kusakwanisa kwe4H-SiC kurwisa kukuvara kwemwaranzi kunoita kuti ive yakakosha munzvimbo dzakaoma dzakadai se:
Zvishandiso zvekuongorora muchadenga.
Midziyo yekutarisa mashandiro emagetsi enyukireya.
Zvigadzirwa zvemagetsi zvemhando yemauto.

6. Matekinoroji Ari Kubudirira
Sezvo tekinoroji yeSiC ichifambira mberi, mashandisirwo ayo anoramba achikura kuita minda yakaita se:
Kutsvaga kwePhotonics uye quantum computing.
Kugadzirwa kwema LED ane simba guru uye masensa eUV.
Kubatanidzwa muzvikamu zvakasiyana-siyana zve semiconductor.
Mabhenefiti e4H-SiC Ingot
Kuchena Kwakanyanya: Yakagadzirwa mumamiriro ezvinhu akaomarara kuderedza kusviba uye kuwanda kwezvikanganiso.
Kukwanisa Kukura: Inowanikwa muhukuru hwemasendimita mana nemana nemana nemana nemana kuti itsigire zvinodiwa neindasitiri pamwe nezvinodiwa neongororo.
Kuchinja-chinja: Inogona kugadziriswa zvichienderana nemhando dzakasiyana dzekushandisa zvinodhaka uye nzira dzekusangana nezvinodiwa zvekushandisa.
Kushanda Kwakasimba: Kugadzikana kwakanyanya kwekupisa uye kwemakanika mumamiriro ekushanda akaipisisa.

Mhedziso

Iyo ingot ye4H-SiC, ine hunhu hwayo hwakasiyana uye mashandisirwo akasiyana-siyana, iri pamberi pekuvandudzwa kwezvinhu zvemagetsi echizvarwa chinotevera uye maoptoelectronics. Ingave ichishandiswa mukutsvagisa kwedzidzo, kugadzira maprototyping emaindasitiri, kana kugadzira zvishandiso zvepamusoro, idzi ingot dzinopa puratifomu yakavimbika yekusundira miganhu yetekinoroji. Nehukuru hwayo, kushandisa zvinodhaka, uye marongero, iyo ingot ye4H-SiC yakagadzirirwa kusangana nezvinodiwa zviri kuchinja zveindasitiri yesemiconductor.
Kana muchida kuziva zvakawanda kana kuisa odha, ndapota inzwa wakasununguka kufonera kuti muwane ruzivo rwakadzama uye mazano ehunyanzvi.