SiC Ingot 4H mhando Dia 4inch 6inch Ukobvu 5-10mm Tsvagiridzo / Dummy Giredhi
Properties
1. Crystal Structure uye Oriental
Polytype: 4H (hexagonal chimiro)
Lattice Constants:
a = 3.073 Å
c = 10.053 Å
Mafambiro: Kazhinji [0001] (C-ndege), asi mamwe maitiro akaita se [11\ overline{2}0] (A-ndege) anowanikwawo pakukumbira.
2. Muviri Dimensions
Diameter:
Sarudzo dzakajairika: 4 inches (100 mm) uye 6 inches (150 mm)
Ukobvu:
Inowanikwa mumhando ye5-10 mm, customizable zvichienderana nezvinodiwa zvekushandisa.
3. Electrical Properties
Doping Type: Inowanikwa mu intrinsic (semi-insulating), n-type (doped nenitrogen), kana p-type (yakagadzirwa nealuminium kana boron).
4. Thermal uye Mechanical Properties
Thermal Conductivity: 3.5-4.9 W/cm·K pane tembiricha yemumba, zvichiita kuti kupisa kwakanyanya kupere.
Kuoma: Mohs chiyero 9, zvichiita SiC yechipiri chete kune diamond mukuoma.
| Parameter | Details | Unit |
| Kukura Nzira | PVT (Chifambiso cheMupfunga Wenyama) | |
| Diameter | 50.8 ± 0.5 / 76.2 ± 0.5 / 100.0 ± 0.5 / 150 ± 0.5 | mm |
| Polytype | 4H / 6H (50.8 mm), 4H (76.2 mm, 100.0 mm, 150 mm) | |
| Surface Oientation | 0.0˚ / 4.0˚ / 8.0˚ ± 0.5˚ (50.8 mm), 4.0˚ ± 0.5˚ (mamwe) | degree |
| Type | N-mhando | |
| Ukobvu | 5-10 / 10-15 / >15 | mm |
| Yekutanga Flat Oriental | (10-10) ± 5.0˚ | degree |
| Primary Flat Length | 15.9 ± 2.0 (50.8 mm), 22.0 ± 3.5 (76.2 mm), 32.5 ± 2.0 (100.0 mm), 47.5 ± 2.5 (150 mm) | mm |
| Secondary Flat Orientation | 90˚ CCW kubva pakurongeka ± 5.0˚ | degree |
| Secondary Flat Length | 8.0 ± 2.0 (50.8 mm), 11.2 ± 2.0 (76.2 mm), 18.0 ± 2.0 (100.0 mm), Hapana (150 mm) | mm |
| Giredhi | Tsvakurudzo / Dummy |
Applications
1. Tsvakurudzo uye Kubudirira
Iyo yekutsvagisa-giredhi 4H-SiC ingot yakanakira edzidzo uye maindasitiri lab akatarisana neSiC-yakavakirwa mudziyo kuvandudza. Hunhu hwayo hwepamusoro hwekristaro hunogonesa kuyedza chaiko paSiC zvivakwa, senge:
Carrier mobility zvidzidzo.
Defect characterization uye minimization maitiro.
Optimization ye epitaxial kukura maitiro.
2. Dummy Substrate
Iyo dummy-giredhi ingot inoshandiswa zvakanyanya mukuyedza, calibration, uye prototyping application. Iri imwe nzira isingadhuri ye:
Process parameter calibration muChemical Vapor Deposition (CVD) kana Physical Vapor Deposition (PVD).
Kuongorora etching uye polishing maitiro munzvimbo dzekugadzira.
3. Simba Electronics
Nekuda kwehupamhi bhendi uye yakakwirira yekupisa conductivity, 4H-SiC ibwe rekona remagetsi emagetsi, akadai se:
High-voltage MOSFETs.
Schottky Barrier Diodes (SBDs).
Junction Field-Effect Transistors (JFETs).
Zvikumbiro zvinosanganisira magetsi emagetsi inverters, solar inverters, uye smart grids.
4. High-Frequency Devices
Izvo zvinhu zvepamusoro erekitironi kufamba uye yakaderera capacitance kurasikirwa kunoita kuti ive yakakodzera:
Radio Frequency (RF) transistors.
Wireless kutaurirana masisitimu, kusanganisira 5G zvivakwa.
Aerospace uye zvekudzivirira zvikumbiro zvinoda radar masisitimu.
5. Radiation-Resistant Systems
4H-SiC's inherent kuramba kukuvara kwemwaranzi inoita kuti ive yakakosha munzvimbo dzakaoma senge:
Space exploration hardware.
Nuclear power plant monitoring equipment.
Military-giredhi zvemagetsi.
6. Emerging Technologies
Sezvo SiC tekinoroji ichifambira mberi, mashandisirwo ayo anoramba achikura kuita minda yakadai se:
Photonics uye quantum computing research.
Kuvandudzwa kweakakwira-simba maLED uye UV sensors.
Kubatanidzwa mune yakakura-bandgap semiconductor heterostructures.
Zvakanakira zve4H-SiC Ingot
High Purity: Yakagadzirwa pasi pemamiriro akaomesesa kuderedza kusvibiswa uye kuremara density.
Scalability: Inowanikwa mune ese 4-inch uye 6-inch madhayamita kutsigira indasitiri-yakajairwa uye yekutsvagisa-chiyero zvinodiwa.
Versatility: Inochinjika kune dzakasiyana siyana doping marudzi uye maratidziro kusangana nezvinodiwa zvekushandisa.
Robust Performance: Superior thermal uye mechanical kugadzikana pasi pemamiriro ekushanda zvakanyanya.
Mhedziso
Iyo 4H-SiC ingot, ine zvimiro zvayo uye maapplication akasiyana-siyana, inomira pamberi pezvigadzirwa zvitsva zvemagetsi echizvarwa chinotevera uye optoelectronics. Ingave ichishandiswa kutsvagisa yedzidzo, maindasitiri prototyping, kana kugadzirwa kwemidziyo yepamberi, idzi ingots dzinopa chikuva chakavimbika chekusundira miganhu yetekinoroji. Iine zvimiro zvinogoneka, doping, uye maitiro, iyo 4H-SiC ingot yakagadzirirwa kusangana nezvinoda kubuda zveindasitiri yesemiconductor.
Kana iwe uchida kudzidza zvakawanda kana kuisa odha, ndapota inzwa wakasununguka kusvika kune yakadzama yakatarwa uye kubvunzana kwehunyanzvi.
Detailed Diagram
