SiC ceramic tray plate graphite ine CVD SiC coating yemidziyo
Silicon carbide ceramics haingoshandiswi chete mufirimu yakaonda deposition stage, yakadai se epitaxy kana MOCVD, kana muwafer processing, pamwoyo iyo matireyi anotakura mafirita eMOCVD anotanga kuiswa pasi pemamiriro ekugadzirisa, uye naizvozvo anopikisa zvakanyanya kupisa uye kuparara.
Yakachena Kemikari Vapor Deposition Silicon Carbide (CVD SiC) inotakura inotakura yekushisa kwepamusoro Metal Organic Chemical Vapor Deposition (MOCVD) kugadzirisa.
Pure CVD SiC wafer carriers akakwirira zvakanyanya kune akajairwa mawafer carriers anoshandiswa mukuita uku, ayo ari graphite uye akaputirwa nerunyoro rweCVD SiC. aya akavharidzirwa magirafu-based carriers haakwanise kushingirira tembiricha yepamusoro (1100 kusvika 1200 madhigirii celsius) inodiwa paGaN deposition yemazuva ano kupenya kwakanyanya kweblue newhite led. Tembiricha yepamusoro inoita kuti jira racho rigadzire tuburi tudiki-diki kuburikidza nekuita makemikari anobvisa graphite pasi. Iwo ma graphite particles anobva abhururuka obva asvibisa GaN, zvichikonzera kuti mutakuri wewafer akavharwa atsiviwa.
CVD SiC ine kuchena kwe99.999% kana kupfuura uye ine yakakwirira yekupisa conductivity uye kupisa kwekutya kupikisa. Naizvozvo, inokwanisa kumira tembiricha yakakwira uye nharaunda dzakaomarara dzekupenya kwakanyanya kwekugadzira LED. Iyo yakasimba monolithic zvinhu inosvika teoretical density, inogadzira zvimedu zvidiki, uye inoratidza yakanyanya kukora uye kusamira kwevhu. Izvo zvinhu zvinogona kuchinja opacity uye conductivity pasina kuunza tsvina yesimbi. Wafer carriers anowanzo 17 inches muhupamhi uye anogona kubata kusvika 40 2-4 inch wafers.
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