SiC ceramic plate/tray ye 4inch 6inch wafer holder ye ICP

SiC ceramic plate/tireyi ye 4inch 6inch wafer holder ye ICP Mufananidzo Wakaratidzwa

Tsananguro pfupi:

SiC ceramic plate chinhu chinoshanda zvakanyanya chakagadzirwa kubva kuSilicon Carbide yakachena kwazvo, yakagadzirirwa kushandiswa munzvimbo dzine kupisa kwakanyanya, makemikari, uye makanika. Ichizivikanwa nekuoma kwayo kwakanyanya, kufambisa kupisa, uye kuramba ngura, SiC plate inoshandiswa zvakanyanya sewafer carrier, susceptor, kana structural component muindasitiri dze semiconductor, LED, photovoltaic, uye aerospace.

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SiC ceramic plate Pfupiso

Nekugadzikana kwakanyanya kwekupisa kusvika ku1600°C uye kuramba kwakanaka kumagasi anochinja-chinja uye plasma environments, SiC plate inoita kuti ishande zvakanaka panguva yekuchekwa, kuiswa, uye kupararira kwemhepo pakupisa kwakanyanya. Maumbirwo ayo akaomarara, asina maburi anoderedza kugadzirwa kwezvidimbu, zvichiita kuti ive yakakodzera kushandiswa kwakachena zvakanyanya munzvimbo dzevacuum kana dzekuchenesa.

SiC ceramic plate Kushandiswa

1. Kugadzira Semiconductor

Maplate eSiC ceramic anowanzo shandiswa sema wafer carriers, susceptors, uye pedestal plates mumichina yekugadzira semiconductor yakaita seCVD (Chemical Vapor Deposition), PVD (Physical Vapor Deposition), uye etching systems. Kufambisa kwavo kwakanaka kwekupisa uye kuwedzera kwekupisa kushoma kunoita kuti varambe vachigovanisa tembiricha yakafanana, izvo zvakakosha pakugadzira wafer nemazvo. Kuramba kweSiC kumagasi anoparadza uye plasma kunoita kuti igare kwenguva refu munzvimbo dzakaoma, zvichibatsira kuderedza kusvibiswa kwezvikamu uye kuchengetedza michina.

2. Indasitiri ye LED - ICP Etching

Muchikamu chekugadzira ma LED, ma SiC plates ndiwo akakosha mu ICP (Inductively Coupled Plasma) etching systems. Vachishanda sema wafer holders, vanopa puratifomu yakasimba uye yakasimba yekutsigira ma wafers e sapphire kana GaN panguva yekugadzirisa plasma. Kusasimba kwavo kwakanyanya kweplasma, kusasimba kwepamusoro, uye kugadzikana kwezvikamu zvinobatsira kuve nechokwadi chekuti etching yakarurama uye yakafanana, zvichikonzera kuwedzera kugona uye kushanda kwemidziyo muma LED chips.

3. Photovoltaics (PV) uye Simba rezuva

Maplate eSiC ceramic anoshandiswawo mukugadzira maseru ezuva, kunyanya panguva yekupisa kwakanyanya uye kupinza. Kusapinda kwawo pakupisa kwakanyanya uye kugona kuramba kuchinjika kunoita kuti mawafer esilicon agare achigadziriswa. Pamusoro pezvo, njodzi yavo shoma yekusvibiswa inokosha pakuchengetedza kushanda zvakanaka kwemasero e photovoltaic.

SiC ceramic plate Properties

1. Simba Rinoshamisa reMichina uye Kuoma

Maplate eSiC ceramic ane simba guru remuchina, ane simba remuchina rinodarika 400 MPa uye kuomarara kweVickers kunosvika >2000 HV. Izvi zvinoita kuti arambe achidzivirira kubva pakusakara kwemuchina, kukweshwa, uye kushanduka, zvichiita kuti agare kwenguva refu kunyangwe ari mukutakura kwakawanda kana kupisa kwakawanda.

2. Kufambisa Kwekupisa Kwakanyanya

SiC ine thermal conductivity yakanaka kwazvo (kazhinji 120–200 W/m·K), zvichiita kuti ikwanise kuparadzira kupisa zvakaenzana pamusoro payo. Hunhu uhwu hwakakosha mumabasa akadai sewafer etching, deposition, kana sintering, uko kufanana kwetembiricha kunokanganisa zvakananga goho rezvigadzirwa uye kunaka kwazvo.

3. Kugadzikana Kwepamusoro Kwekupisa

Nekunyunguduka kwakanyanya (2700°C) uye kuwedzera kwekupisa kwakaderera (4.0 × 10⁻⁶/K), maplate eSiC ceramic anoramba akarurama uye akasimba muchimiro chawo kana achipisa nekukurumidza uye achitonhodza. Izvi zvinoita kuti akwanise kushandiswa muzvitofu zvinopisa zvakanyanya, mumakamuri evacuum, uye munzvimbo dzeplasma.

Zvivakwa zveUnyanzvi
Index	Chikamu	Kukosha
Zita reChinhu		Maitiro Sintered nesilicon Carbide	Pressureless Sintered nesilicon carbide	Silicon Carbide yakagadzirwazve
Kuumbwa		RBSiC	SSiC	R-SiC
Kuwanda kwehuwandu	g/cm3	3	3.15 ± 0.03	2.60-2.70
Simba reKuchinjika	MPa (kpsi)	338(49)	380(55)	80-90 (20°C) 90-100 (1400°C)
Simba Rinodzvinyirira	MPa (kpsi)	1120(158)	3970(560)	> 600
Kuoma	Knoop	2700	2800	/
Kuputsa Kusimba	MPa m1/2	4.5	4	/
Kufambisa kwekupisa	W/mk	95	120	23
Kuwanda kweThermal Coefficient	10^-6.1/°C	5	4	4.7
Kupisa Kwakasiyana	Joule/g 0k	0.8	0.67	/
Tembiricha yepamusoro mumhepo	℃	1200	1500	1600
Modulus yeElastic	Gpa	360	410	240

Mibvunzo nemhinduro pamusoro peplate yeSiC ceramic

Q: Ndezvipi zvinhu zve silicon carbide plate?

A: Maplate eSilicon carbide (SiC) anozivikanwa nekusimba kwawo kwakanyanya, kuomarara, uye kugadzikana kwekupisa. Anopa kufambiswa kwakanaka kwekupisa uye kuwedzera kupisa kwakaderera, zvichiita kuti pave nekushanda kwakavimbika pasi pekupisa kwakanyanya. SiC haina makemikari, inodzivirira maacid, alkalis, uye plasma environments, zvichiita kuti ive yakakodzera kushandiswa kwema semiconductor ne LED. Nzvimbo yayo yakakora uye yakapfava inoderedza kugadzirwa kwezvikamu, ichichengetedza kuenderana kwenzvimbo yakachena. Maplate eSiC anoshandiswa zvakanyanya se wafer carriers, susceptors, uye support components munzvimbo dzine tembiricha yakakwira uye inoparadza mu semiconductor, photovoltaic, uye aerospace industry.