SiC ceramic end effect ruoko rwekubata wafer

Tsananguro pfupi:

MaWafer eLiNbO₃ anomiririra mwero wegoridhe mumifananidzo yakabatanidzwa uye acoustics chaiyo, zvichipa mashandiro asina muganho mumasisitimu emazuva ano e optoelectronic. Semugadziri anotungamira, takavandudza hunyanzvi hwekugadzira ma substrates aya akagadzirwa kuburikidza nehunyanzvi hwepamusoro hwekufambisa vapor, tichiwana kukwana kwekristaro kunotungamira muindasitiri ine defect densities iri pasi pe50/cm².

Kugona kwekugadzira XKH kunotangira pa75mm kusvika 150mm, nekutonga kwakanyatsojeka (X/Y/Z-cut ±0.3°) uye sarudzo dzedoping dzakagadzirwa dzinosanganisira zvinhu zvisingawanzoitiki. Musanganiswa wakasiyana wezvinhu zviri muLiNbO₃ Wafers - kusanganisira r₃₃ coefficient yavo inoshamisa (32±2 pm/V) uye kujeka kwakakura kubva padyo neUV kusvika pakati peIR - zvinoita kuti zvive zvakakosha kune ma photonic circuits echizvarwa chinotevera uye zvishandiso zve high-frequency acoustic.

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Chidimbu cheSiC ceramic end effect

SiC (Silicon Carbide) ceramic end-effector chinhu chakakosha mukugadzirisa mawafer nemazvo anoshandiswa mukugadzira semiconductor uye munzvimbo dzepamusoro dzekugadzira ma microfabrication. Yakagadzirwa kuti isangane nezvinodiwa zvenzvimbo dzakachena zvakanyanya, dzinopisa zvakanyanya, uye dzakagadzikana, iyi end-effector yakasarudzika inoita kuti mawafer atakurwe zvakanaka uye asina kusvibiswa panguva dzekugadzira dzakakosha dzakadai se lithography, etching, uye deposition.

Kushandisa hunhu hwepamusoro hwesilicon carbide—senge kufambisa kwemafuta zvakanyanya, kuomarara kwakanyanya, kusagadzikana kwemakemikari kwakanyanya, uye kuwedzera kushoma kwemafuta—SiC ceramic end-effector inopa kuomarara kwemuchina uye kugadzikana kwehukuru kunyangwe kana paine kupisa kwakanyanya kana mumakamuri ekugadzirisa ngura. Kugadzira kwayo zvidimbu zvishoma uye hunhu hwayo hwekudzivirira plasma zvinoita kuti ive yakakodzera kushandiswa mukuchenesa uye mukugadzirisa vacuum, uko kuchengetedza kusimba kwenzvimbo yewafer uye kuderedza kusvibiswa kwezvidimbu zvakakosha.

SiC ceramic end effector Kushandiswa

1. Kubata Wafer yeSemiconductor

Zvishandiso zveSiC ceramic end effectors zvinoshandiswa zvakanyanya muindasitiri yesemiconductor kubata mawafer esilicon panguva yekugadzira otomatiki. Izvi zvinowanzoiswa pamaoko erobhoti kana masisitimu ekufambisa vacuum uye zvakagadzirirwa kugamuchira mawafer ehukuru hwakasiyana senge 200mm ne300mm. Akakosha mumabasa anosanganisira Chemical Vapor Deposition (CVD), Physical Vapor Deposition (PVD), etching, uye diffusion—uko tembiricha yakakwira, mamiriro evacuum, uye magasi anoparadza zvakajairika. Kusasimba kwakanyanya kwekupisa kweSiC uye kugadzikana kwemakemikari kunoita kuti ive chinhu chakanakira kutsungirira mamiriro akaoma kudaro pasina kuora.

2. Kuenderana kwenzvimbo yekuchenesa ne vacuum

Munzvimbo dzakachena uye munzvimbo dzinopisa, uko kusvibiswa kwezvikamu kunofanira kuderedzwa, SiC ceramics inopa mabhenefiti makuru. Nzvimbo yakatetepa uye yakapfava yechinhu ichi inodzivirira kugadzirwa kwezvikamu, zvichibatsira kuchengetedza kusimba kwewafer panguva yekufambisa. Izvi zvinoita kuti SiC end effectors ive yakakodzera zvakanyanya kune zviitiko zvakakosha zvakaita seExtreme Ultraviolet Lithography (EUV) uye Atomic Layer Deposition (ALD), uko kuchena kwakakosha. Uyezve, SiC haina gasi rakawanda uye kuramba kwayo kwakanyanya muplasma kunoita kuti ishande zvakanaka mumakamuri ekupisa, zvichiwedzera hupenyu hwezvishandiso uye zvichideredza nguva yekugadzirisa.

3. Masisitimu Ekuisa Nzvimbo Nemazvo

Kunyatsorongeka uye kugadzikana kwakakosha muhurongwa hwepamusoro hwekubata mawafer, kunyanya mumetrology, inspection, uye alignment equipment. SiC ceramics dzine coefficient yakaderera kwazvo yekuwedzera kwekupisa uye kuomarara kwakanyanya, izvo zvinobvumira end effector kuchengetedza kurongeka kwayo kunyangwe iri pasi pekupisa kana mutoro wemakanika. Izvi zvinoita kuti mawafer arambe akarongeka zvakanaka panguva yekufambisa, zvichideredza njodzi yekukwenya kudiki, kusarongeka, kana zvikanganiso zvekuyera - zvinhu zviri kuramba zvichikosha pa sub-5nm process nodes.

Zvivakwa zveSiC ceramic end effect

1. Simba reMichina uye Kuoma Kwazvo

Zvigadziko zveSiC zvine simba guru remuchina, zvine simba rekuchinjika rinowanzo pfuura 400 MPa uye kuomarara kweVickers kuri pamusoro pe2000 HV. Izvi zvinoita kuti zvisanyanya kukanganiswa nekumanikidzwa kwemuchina, kukanganiswa, uye kupera, kunyangwe mushure mekushandiswa kwenguva refu. Kusimba kwakanyanya kweSiC kunoderedzawo kutsauka panguva yekufambiswa kwewafer nekukurumidza, zvichiita kuti ive nzvimbo yakarurama uye inodzokororwa.

2. Kugadzikana Kwakanaka Kwekupisa

Chimwe chezvinhu zvinonyanya kukosha zveSiC ceramics kugona kwadzo kutsungirira tembiricha yakakwira zvakanyanya—kazhinji kusvika 1600°C mumhepo isina kusimba—pasina kurasikirwa nehunhu hwemakanika. Kuwanda kwadzo kwakaderera kwekuwedzera kwekupisa (~4.0 x 10⁻⁶ /K) kunoita kuti dzive dzakasimba pasi pekupisa, zvichiita kuti dzive dzakakodzera kushandiswa senge CVD, PVD, uye high-temperature annealing.

Mibvunzo nemhinduro pamusoro peSiC ceramic end effect

Q: Chii chinoshandiswa mu wafer end effect?

A:Zvishandiso zveWafer zvinowanzogadzirwa nezvinhu zvinopa simba rakawanda, kugadzikana kwekupisa, uye kugadzira zvidimbu zvishoma. Pakati peizvi, Silicon Carbide (SiC) ceramic ndeimwe yezvinhu zvepamusoro uye zvinofarirwa. SiC ceramics dzakaoma zvikuru, dzakagadzikana pakupisa, hadzina makemikari, uye hadzina kupfeka, zvichiita kuti dzive dzakanakira kubata silicon wafers dzakapfava munzvimbo dzakachena uye munzvimbo dzisina vacuum. Zvichienzaniswa nequartz kana simbi dzakaputirwa, SiC inopa kugadzikana kwepamusoro-soro pasi pekupisa kwakanyanya uye haiburitse zvidimbu, izvo zvinobatsira kudzivirira kusvibiswa.