Semi-Insulating SiC paSi Composite Substrates
| Zvinhu | Tsanangudzo | Zvinhu | Tsanangudzo |
| Dhayamita | 150±0.2mm | Kudzidziswa | <111>/<100>/<110> nezvimwewo |
| Mhando yePolytype | 4H | Rudzi | P/N |
| Kuramba | ≥1E8ohm·cm | Kufara | Flat/Notch |
| Ukobvu hwechitamisiro | ≥0.1μm | Edge Chip, Kukwenya, Kutsemuka (kutarisa nemaziso) | Hapana |
| Hapana chinhu | ≤5ea/wafer (2mm>D>0.5mm) | TTV | ≤5μm |
| Kukombama kwepamberi | Ra≤0.2nm (5μm*5μm) | Ukobvu | 500/625/675±25μm |
Musanganiswa uyu une zvakanakira zvakawanda mukugadzira midziyo yemagetsi:
Kuenderana: Kushandiswa kwesilicon substrate kunoita kuti ienderane nemaitiro akajairwa ekugadzirisa akavakirwa pasilicon uye inobvumira kubatanidzwa nemaitiro aripo ekugadzira semiconductor.
Kushanda zvakanaka kwekupisa: SiC ine simba rekupisa rakanaka uye inogona kushanda pakupisa kwakanyanya, zvichiita kuti ive yakakodzera kushandiswa kwemagetsi ane simba rakawanda uye mashandisirwo emagetsi akawandisa.
Voltage Yakakura: Zvinhu zveSiC zvine voltage yakakura uye zvinogona kutsungirira magetsi akawanda pasina kukuvara kwemagetsi.
Kurasikirwa Kwemagetsi Kwakaderera: Zvishandiso zveSiC zvinobvumira kushandurwa kwemagetsi zviri nani uye kurasikirwa kwesimba kwakaderera mumidziyo yemagetsi zvichienzaniswa nezvinhu zvechinyakare zvakagadzirwa nesilicon.
Kureba kwebandwidth: SiC ine bandwidth yakakura, zvichibvumira kugadzirwa kwemidziyo yemagetsi inogona kushanda pakupisa kwakanyanya uye simba rakawanda.
Saka SiC inoputira zvishoma paSi composite substrates inosanganisa silicon inoenderana neSiC ine simba remagetsi nekupisa, zvichiita kuti ive yakakodzera kushandiswa kwemagetsi epamusoro.
Kurongedza uye Kutumira
1. Tichashandisa purasitiki inodzivirira uye yakaiswa mumabhokisi akagadziriswa kuti tiise zvinhu zvakanaka. (Zvinhu zvisingakuvadzi nharaunda)
2. Tinogona kurongedza zvinhu zvichienderana nehuwandu hwazvo.
3. DHL/Fedex/UPS Express inowanzo tora mazuva matatu kusvika manomwe ekushanda kusvika kwairi kuenda.
Dhayagiramu Yakadzama
