Semi-Insulating SiC paSi Composite Substrates
Items | Tsanangudzo | Items | Tsanangudzo |
Diameter | 150±0.2mm | Orientation | <111>/<100>/<110> zvichingodaro |
Polytype | 4H | Type | P/N |
Resistivity | ≥1E8ohm·cm | Flatness | Flat/Notch |
Kutamisa layer Hukobvu | ≥0.1μm | Edge Chip, Scratch, Crack (kutarisa kwekuona) | Hapana |
Void | ≤5ea/wafer (2mm>D>0.5mm) | TTV | ≤5μm |
Hushasha hwepamberi | Ra≤0.2nm (5μm*5μm) | Ukobvu | 500/625/675±25μm |
Musanganiswa uyu unopa akati wandei mabhenefiti mukugadzira zvemagetsi:
Kugarisana: Kushandiswa kwesilicon substrate kunoita kuti ienderane neyakajairwa silicon-based processing matekiniki uye inobvumira kubatanidzwa nearipo semiconductor kugadzira maitiro.
Kubata kwekushisa kwepamusoro: SiC ine yakanakisa yekupisa yekupisa uye inogona kushanda patembiricha yakakwira, ichiita kuti ive yakakodzera simba repamusoro uye yakakwirira frequency magetsi ekushandisa.
High Breakdown Voltage: SiC zvinhu zvine yakakwira breakdown voltage uye zvinokwanisa kumira minda yemagetsi yakakwira pasina kuparara kwemagetsi.
Yakaderedzwa Kurasika Kwesimba: SiC substrates inobvumira kushanduka kwesimba kwakanyanya uye kuderera kwesimba mumidziyo yemagetsi zvichienzaniswa neyechinyakare silicon-yakavakirwa zvinhu.
Wide bandwidth: SiC ine yakakura bandwidth, inobvumira kuvandudzwa kwemidziyo yemagetsi inogona kushanda patembiricha yepamusoro uye yakakwirira simba density.
Saka semi-insulating SiC paSi composite substrates inosanganisa kuenderana kwesilicon nemhando yepamusoro yemagetsi uye yekupisa zvivakwa zveSiC, zvichiita kuti ive yakakodzera kune yepamusoro-inoshanda zvemagetsi zvikumbiro.
Kurongedza uye Delivery
1. Tichashandisa plastiki inodzivirira uye yakagadzirirwa bhokisi kutakura. (Enviroment friendly material)
2. Tinogona kuita customized kurongedza maererano nehuwandu.
3. DHL/Fedex/UPS Express kazhinji inotora anenge 3-7mazuva ekushanda kuenda kunzvimbo yacho.