Chigadzirwa chitsva cheP-type SiC substrate SiC wafer Dia2inch

Zvishandiso zveP-type silicon carbide zvinowanzo shandiswa kugadzira michina yemagetsi, senge Insulate-Gate Bipolar transistors (IGBTs).

IGBT= MOSFET+BJT, inova switch inodzima. MOSFET=IGFET(metal oxide semiconductor field effect tube, kana insulated gate type field effect transistor). BJT(Bipolar Junction Transistor, inozivikanwawo se transistor), bipolar zvinoreva kuti kune mhando mbiri dzema electron nemaburi carriers anobatanidzwa mukuita kwe conduction, kazhinji pane PN junction inobatanidzwa mu conduction.

Wafer yemhando yep-type silicon carbide (SiC) ye 2-inch iri mu 4H kana 6H polytype. Ine hunhu hwakafanana newafer yemhando ye n-type silicon carbide (SiC), dzakadai sekudzivirira kupisa kwakanyanya, kupisa kwakanyanya, uye kufambisa magetsi zvakanyanya. P-type SiC substrates dzinowanzo shandiswa mukugadzira zvishandiso zvemagetsi, kunyanya pakugadzira insulated-gate bipolar transistors (IGBTs). dhizaini yeIGBTs inowanzo sanganisira PN junctions, uko p-type SiC inobatsira kudzora maitiro emudziyo.