P-mhando SiC substrate SiC wafer Dia2inch chigadzirwa chitsva

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2 inch P-Type Silicon Carbide (SiC) Wafer mune 4H kana 6H polytype. Iine zvimiro zvakafanana neN-mhando yeSilicon Carbide (SiC) wafer, senge yakakwira tembiricha yekudzivirira, yakanyanya kupisa conductivity, yakakwirira magetsi conductivity, etc. P-mhando SiC substrate inowanzoshandiswa kugadzira magetsi emagetsi, kunyanya kugadzirwa kweInsulated. Gedhi Bipolar Transistors (IGBT). Dhizaini yeIGBT inowanzobatanidza PN junctions, uko P-mhando SiC inogona kubatsira pakudzora maitiro emidziyo.

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P-mhando silicon carbide substrates inowanzoshandiswa kugadzira magetsi emagetsi, akadai seInsulate-Gate Bipolar transistors (IGBTs).

IGBT= MOSFET+BJT, iri on-off switch. MOSFET = IGFET(simbi oxide semiconductor munda effect chubhu, kana insulated gedhi mhando munda mhedzisiro transistor). BJT(Bipolar Junction Transistor, inozivikanwawo se transistor), bipolar zvinoreva kuti kune marudzi maviri emaelectron uye maburi anotakura anobatanidzwa mukuita conduction kubasa, kazhinji pane PN junction inobatanidzwa mukuitisa.

Iyo 2-inch p-mhando yesilicon carbide (SiC) wafer iri mu4H kana 6H polytype. Iyo ine zvimiro zvakafanana kune n-mhando silicon carbide (SiC) mawafers, akadai seyepamusoro tembiricha kuramba, yakakwirira yekupisa conductivity, uye yakakwirira magetsi conductivity. p-type SiC substrates inowanzoshandiswa mukugadzira midziyo yemagetsi, kunyanya pakugadzira insulated-gedhi bipolar transistors (IGBTs). dhizaini yeIGBTs inowanzobatanidza PN junctions, uko p-mhando SiC inobatsira pakudzora maitiro echishandiso.