Zvikamu zveSemiconductor zveChizvarwa Chinotevera: Sapphire, Silicon, uye Silicon Carbide

Muindasitiri ye semiconductor, ma substrate ndiwo musimboti wezvinhu zvinotsamira pakushanda kwemidziyo. Hunhu hwawo hwemuviri, hwekupisa, uye hwemagetsi hunokanganisa zvakananga kushanda zvakanaka, kuvimbika, uye chiyero chekushandiswa. Pakati pesarudzo dzese, sapphire (Al₂O₃), silicon (Si), uye silicon carbide (SiC) dzave dziri substrate dzinoshandiswa zvakanyanya, imwe neimwe ichibudirira munzvimbo dzakasiyana dzetekinoroji. Chinyorwa chino chinoongorora hunhu hwadzo hwezvinhu, mamiriro ekushandiswa, uye mafambiro ekuvandudza mune ramangwana.

Sapphire: Bhiza Rinoshanda reOptical

Sapphire imhando yealuminium oxide ine kristalo imwe chete ine hexagonal lattice. Hunhu hwayo hukuru hunosanganisira kuomarara kwakanyanya (Mohs hardness 9), kujeka kwakakura kubva kuultraviolet kusvika ku infrared, uye kuramba kwakasimba kwemakemikari, zvichiita kuti ive yakakodzera michina ye optoelectronic uye nzvimbo dzakaoma. Matekiniki ekukura epamusoro senge Heat Exchange Method uye Kyropoulos method, pamwe chete ne chemical-mechanical polishing (CMP), anogadzira ma wafer ane sub-nanometer surface roughness.

Hwindo Rakagadzirwa Nesafire Rakagadzirwa Nechinhu Chinooneka

Zvishandiso zvesafire zvinoshandiswa zvakanyanya mumaLED nemaMicro-LED seGaN epitaxial layers, uko patterned sapphire substrates (PSS) inovandudza kushanda zvakanaka kwekuburitsa chiedza. Zvinoshandiswawo mumidziyo yeRF ine frequency yakakwira nekuda kwehunhu hwayo hwekudzivirira magetsi, uye mumidziyo yemagetsi nemidziyo yemuchadenga semahwindo ekudzivirira uye masensa. Zvipingamupinyi zvinosanganisira thermal conductivity yakaderera (35–42 W/m·K) uye lattice mismatch neGaN, izvo zvinoda buffer layers kuderedza zvikanganiso.

Silicon: Nheyo yeMicroelectronics

Silicon inoramba iri musimboti wemagetsi echinyakare nekuda kwekukura kwayo muindasitiri, kugadziriswa kwemagetsi kuburikidza nekushandisa zvinodhaka, uye hunhu hwekupisa huri pakati nepakati (kupisa kwemafuta ~150 W/m·K, nzvimbo yekunyunguduka 1410°C). Anopfuura 90% emaseketi akabatanidzwa, anosanganisira maCPU, ndangariro, uye zvishandiso zvelogic, anogadzirwa pamawafers esilicon. Silicon inonyanya kutonga masero e photovoltaic uye inoshandiswa zvakanyanya mumidziyo ine simba shoma kusvika pakati senge IGBTs neMOSFETs.

Zvisinei, silicon inosangana nematambudziko mukushandiswa kwemagetsi ane simba guru uye mafrequency akakwira nekuda kwenzvimbo yayo yakamanikana yebandgap (1.12 eV) uye nzvimbo isina kujeka yebandgap, iyo inoderedza kushanda zvakanaka kwechiedza.

Silicon Carbide: Mugadziri Ane Simba Guru

SiC imhando ye semiconductor yechizvarwa chechitatu ine bandgap yakakura (3.2 eV), high breakdown voltage (3 MV/cm), high thermal conductivity (~490 W/m·K), uye fast electron saturation velocity (~2×10⁷ cm/s). Hunhu uhu hunoita kuti ive yakakodzera michina ine high-voltage, high-power, uye high-frequency. SiC substrates dzinowanzo kurimwa kuburikidza ne physical vapor transport (PVT) patembiricha dzinopfuura 2000°C, dzine zvinodiwa zvakaoma uye zvakanyatsonaka zvekugadzirisa.

Mashandisirwo anosanganisira mota dzemagetsi, uko SiC MOSFETs inovandudza mashandiro e inverter ne5–10%, masisitimu ekutaurirana e5G anoshandisa semi-insulating SiC yeGaN RF devices, uye smart grids ine high-voltage direct current (HVDC) transmission inoderedza kurasikirwa kwesimba nekusvika 30%. Zvipingamupinyi mitengo yakakwira (6-inch wafers inodhura ka20–30 kupfuura silicon) uye matambudziko ekugadzirisa nekuda kwekuoma kwakanyanya.

Mabasa Ekuwedzera uye Maonero Eramangwana

Safira, silicon, uye SiC zvinoumba ecosystem ye substrate inoenderana muindasitiri ye semiconductor. Safira ndiyo inonyanya kushandisa optoelectronics, silicon inotsigira microelectronics dzechinyakare uye zvishandiso zvemagetsi zvepasi kusvika pakati, uye SiC ndiyo inonyanya kushandisa magetsi emagetsi ane simba rakawanda, mafrequency akakwira, uye anoshanda zvakanyanya.

Zviitiko zveramangwana zvinosanganisira kuwedzera kushandiswa kwesapphire muma LED e UV akadzika uye ma micro-LED, zvichiita kuti Si-based GaN heteroepitaxy iwedzere kushanda kwepamusoro-soro, uye kuwedzera kugadzirwa kweSiC wafer kusvika masendimita masere nekuwedzera goho uye kushanda zvakanaka kwemari. Pamwe chete, zvinhu izvi zviri kutungamira hunyanzvi mu 5G, AI, uye kufamba kwemagetsi, zvichiumba chizvarwa chinotevera che tekinoroji ye semiconductor.


Nguva yekutumira: Mbudzi-24-2025