Wafer Substrates seMakiyi Zvishandiso muSemiconductor Zvishandiso
Wafer substrates ndivo vatakuri vemuviri vemichina semiconductor, uye zvimiro zvavo zvezvinhu zvinotarisa zvakananga kuita kwechishandiso, mutengo, uye minda yekushandisa. Pazasi pane iwo makuru marudzi ewafer substrates pamwe nezvaakanakira uye zvazvakaipira:
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Kugova Kwemusika:Maakaundi anopfuura makumi mapfumbamwe neshanu muzana epasi rose semiconductor musika.
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Zvakanakira:
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Mutengo wakaderera:Yakawanda mbishi zvinhu (silicon dioxide), akakura ekugadzira maitiro, uye hupfumi hwakasimba hwechiyero.
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High process kuenderana:Tekinoroji yeCMOS yakakura kwazvo, inotsigira node dzepamberi (semuenzaniso, 3nm).
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Yakanakisa crystal quality:Mahombe-diameter mawafer (kunyanya 12-inch, 18-inch pasi pekuvandudzwa) ane yakaderera density anogona kukura.
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Stable mechanical properties:Zviri nyore kucheka, kupukuta, uye kubata.
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Zvakaipa:
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Narrow bandgap (1.12 eV):High leakage ikozvino pane yakakwirira tembiricha, kudzikisira simba mudziyo kushanda.
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Indirect bandgap:Yakanyanya kuderera kwechiedza emission performance, isina kukodzera kune optoelectronic zvishandiso senge LEDs uye lasers.
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Mufambiro wemaerekitironi mashoma:Yakaderera yakakwira-frequency performance kana ichienzaniswa necompound semiconductors.

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Applications:Yakakwira-frequency RF zvishandiso (5G / 6G), optoelectronic zvishandiso (lasers, solar masero).
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Zvakanakira:
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High electron mobility (5-6 × iyo yesilicon):Inokodzera kukurumidza-kumhanya, yakakwirira-frequency application senge millimeter-wave communication.
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Yakananga bandgap (1.42 eV):Yakakwirira-inoshanda photoelectric shanduko, hwaro hwe infrared lasers uye LEDs.
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High tembiricha uye radiation kuramba:Inokodzera aerospace uye nharaunda dzakaoma.
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Zvakaipa:
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Mutengo wepamusoro:Zvinhu zvakashomeka, zvakaoma kukura kwekristaro (zvinotapukira), saizi shoma shoma (kunyanya 6-inch).
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Brittle mechanics:Inoda kutsemuka, zvichikonzera kuderera kwegoho rekugadzirisa.
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Muchetura:Arsenic inoda kubata kwakasimba uye kutonga kwezvakatipoteredza.
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3. Silicon Carbide (SiC)
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Applications:Yepamusoro-tembiricha uye yakakwira-voltage magetsi emagetsi (EV inverters, zviteshi zvekuchaja), aerospace.
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Zvakanakira:
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Wide bandgap (3.26 eV):Simba rekuparara kwepamusoro (10 × iyo yesilicon), kushivirira kwepamusoro-kupisa (kushanda tembiricha> 200 ° C).
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High thermal conductivity (≈3 × silicon):Yakanakisa kupisa kupisa, inogonesa yakakwirira system simba density.
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Low switching kurasikirwa:Inovandudza simba rekushandura kushanda.
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Zvakaipa:
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Inonetsa kugadzirira substrate:Slow crystal kukura (> 1 vhiki), yakaoma kuremara kudzora (micropipes, dislocations), yakanyanya kudhura mutengo (5-10 × silicon).
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Saizi diki yewafer:Kunyanya 4-6 inch; 8-inch ichiri kugadziridzwa.
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Zvakaoma kugadzirisa:Zvakaoma kwazvo (Mohs 9.5), kugadzira kucheka uye kupukuta-inopedza nguva.
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4. Gallium Nitride (GaN)
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Applications:High-frequency power devices (kukurumidza kuchaja, 5G base stations), blue LEDs / lasers.
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Zvakanakira:
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Ultra-yakakwirira maerekitironi kufamba + yakakura bandgap (3.4 eV):Inobatanidza high-frequency (> 100 GHz) uye high-voltage performance.
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Kudzikira-kuramba:Inoderedza kurasikirwa kwemagetsi emudziyo.
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Heteroepitaxy inoenderana:Inowanzo kurira pasilicon, safiro, kana SiC substrates, kuderedza mutengo.
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Zvakaipa:
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Bulk single-crystal kukura kwakaoma:Heteroepitaxy ndiyo yakawanda, asi kusawirirana kwelattice kunounza hurema.
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Mutengo wepamusoro:Native GaN substrates inodhura zvakanyanya (2-inch wafer inogona kuita zviuru zveUSD).
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Kuvimbika matambudziko:Phenomena yakadai sekudonha kwazvino inoda optimization.
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5. Indium Phosphide (InP)
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Applications:High-speed optical communications (lasers, photodetectors), terahertz zvishandiso.
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Zvakanakira:
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Ultra-yakakwirira erekitironi kufamba:Inotsigira> 100 GHz kushanda, kupfuura maGaAs.
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Direct bandgap ine wavelength inoenderana:Core zvinhu zve 1.3-1.55 μm optical fiber kutaurirana.
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Zvakaipa:
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Yakaoma uye inodhura zvikuru:Mutengo we substrate unodarika zana × silicon, akaganhurwa saizi yewafer (4-6 inch).
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6. Safire (Al₂O₃)
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Applications:Mwenje ye LED (GaN epitaxial substrate), yemagetsi inovhara girazi.
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Zvakanakira:
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Mutengo wakaderera:Zvakachipa zvakanyanya kupfuura SiC/GaN substrates.
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Yakanakisa kugadzikana kwemakemikari:Corrosion-resistant, inodzivirira zvakanyanya.
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Kujeka:Inokodzera vertical LED zvimiro.
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Zvakaipa:
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Kusawirirana kwelatisi hombe neGaN (>13%):Inokonzeresa kuremara density, inoda buffer layer.
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Yakashata yekupisa conductivity (~ 1/20 yesilicon):Inomisa kushanda kwema-high-power LEDs.
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7. Ceramic Substrates (AlN, BeO, nezvimwewo)
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Applications:Kupisa kuparadzira kwepamusoro-simba modules.
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Zvakanakira:
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Insulating + high thermal conductivity (AlN: 170–230 W/m·K):Inokodzera kurongedza kwepamusoro-density.
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Zvakaipa:
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Non-single-crystal:Haikwanise kutsigira zvakananga kukura kwechishandiso, inoshandiswa chete semapasita ekurongedza.
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8. Special Substrates
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SOI (Silicon pane Insulator):
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Chimiro:Silicon/SiO₂/silicon sandwich.
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Zvakanakira:Inoderedza parasitic capacitance, radiation-yakaomeswa, leakage kudzvinyirira (inoshandiswa muRF, MEMS).
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Zvakaipa:30-50% inodhura kupfuura yakawanda silicon.
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Quartz (SiO₂):Inoshandiswa mumafotomasks uye MEMS; high-temperature kuramba asi yakanyanya brittle.
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Dhaimondi:Yepamusoro-soro yekupisa yekupisa substrate (>2000 W/m·K), iri pasi peR&D yekubvisa kupisa kwakanyanya.
Kuenzanisa Summary Tafura
| Substrate | Bandgap (eV) | Kufamba Kwemagetsi (cm²/V·s) | Thermal Conductivity (W/m·K) | Main Wafer Size | Core Applications | Mutengo |
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| Si | 1.12 | ~1,500 | ~150 | 12-inch | Logic / Memory Chips | Pazasi |
| GaAs | 1.42 | ~8,500 | ~55 | 4-6 padiki | RF / Optoelectronics | High |
| SiC | 3.26 | ~900 | ~490 | 6-inch (8-inch R&D) | Zvishandiso zvemagetsi / EV | High High |
| GaN | 3.4 | ~2,000 | ~130–170 | 4-6 inch (heteroepitaxy) | Kuchaja nekukurumidza / RF / LEDs | High (heteroepitaxy: yepakati) |
| InP | 1.35 | ~5,400 | ~70 | 4-6 padiki | Optical kutaurirana / THz | Zvakanyanyisa High |
| Safire | 9.9 (isulator) | - | ~40 | 4-8 padiki | LED substrates | Low |
Zvinhu zvakakosha zveSarudzo ye Substrate
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Performance zvinodiwa:GaAs / InP yepamusoro-frequency; SiC ye-high-voltage, high-temperature; GaAs/InP/GaN ye optoelectronics.
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Zvisungo:Consumer electronics inofarira silicon; minda yepamusoro-soro inogona kururamisa maprimiyamu eSiC/GaN.
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Kubatanidzwa kwakaoma:Silicon inoramba isingachinjike kune CMOS kuenderana.
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Thermal management:High-simba maapplications anosarudza SiC kana diamond-based GaN.
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Supply chain maturity:Si > Sapphire > GaAs > SiC > GaN > InP.
Future Trend
Heterogeneous kubatanidzwa (semuenzaniso, GaN-on-Si, GaN-on-SiC) ichaenzanisa kuita uye mutengo, kutyaira kufambira mberi mu5G, mota dzemagetsi, uye quantum computing.
Nguva yekutumira: Aug-21-2025






