Silicon carbide (SiC), semhando yeyakafara bhendi gap semiconductor zvinhu, inoita basa rinowedzera kukosha mukushandiswa kwesainzi yemazuva ano uye tekinoroji. Silicon carbide ine yakanakisa kugadzikana kwekupisa, kushivirira kwemagetsi mumunda, kuita nemaune uye zvimwe zvakanakisa zvemuviri uye zvemeso zvimiro, uye inoshandiswa zvakanyanya mumidziyo yeoptoelectronic nemidziyo yezuva. Nekuda kwekuwedzera kuri kuda kwemidziyo yemagetsi inoshanda uye yakagadzikana, kugona tekinoroji yekukura kwesilicon carbide yave nzvimbo inopisa.
Saka yakawanda sei iwe yaunoziva nezveSiC kukura maitiro?
Nhasi tichakurukura nzira nhatu huru dzekukura kwesilicon carbide single crystals: physical vapor transport (PVT), liquid phase epitaxy (LPE), uye yakakwirira tembiricha kemikari vapor deposition (HT-CVD).
Nzira yekufambisa yePhysical Vapor (PVT)
Yemuviri mhute yekufambisa nzira ndeimwe yeanonyanya kushandiswa silicon carbide kukura maitiro. Kukura kweimwe crystal silicon carbide kunonyanya kutsamira pane sublimation ye sic poda uye kudzoreredzwa pambeu yekristaro pasi pemamiriro ekushisa. Mune yakavharwa graphite crucible, iyo silicon carbide poda inopisa kusvika pakupisa kwakanyanya, kuburikidza nekutonga kwekushisa gradient, iyo silicon carbide steam inodonhedza pamusoro peiyo mhodzi crystal, uye zvishoma nezvishoma inokura yakakura saizi imwe kristaro.
Iyo yakawanda yemonocrystalline SiC yatinopa parizvino inogadzirwa nenzira iyi yekukura. Iyo zvakare ndiyo nzira huru muindasitiri.
Liquid phase epitaxy (LPE)
Silicon carbide makristasi anogadzirirwa neyemvura chikamu epitaxy kuburikidza nekristaro yekukura maitiro pane yakasimba-mvura interface. Nenzira iyi, iyo silicon carbide powder inonyungudutswa musilicon-carbon solution pakupisa kwepamusoro, uye ipapo tembiricha inodzikiswa kuitira kuti silicon carbide inonaya kubva mumushonga uye inokura pamakristasi embeu. Mukana mukuru weiyo LPE nzira kugona kuwana emhando yepamusoro makristasi pane yakaderera tembiricha yekukura, mutengo wakaderera, uye wakakodzera kugadzirwa kwakakura.
Kupisa kwakanyanya Chemical Vapor Deposition (HT-CVD)
Nekuunza gasi rine silicon uye kabhoni mukamuri yekupindura pakupisa kwakanyanya, iyo imwechete crystal layer yesilicon carbide inoiswa yakananga pamusoro peiyo mhodzi crystal kuburikidza nemakemikari reaction. Kubatsira kweiyi nzira ndeyokuti chiyero chekuyerera uye maitiro ekugadzirisa gasi anogona kunyatsodzorwa, kuitira kuti uwane silicon carbide crystal ine kuchena kwepamusoro uye zvishoma zvishoma. Iyo HT-CVD maitiro anogona kugadzira silicon carbide makristasi ane akanakisa zvivakwa, ayo anonyanya kukosha kune maapplication panodiwa zvemhando yepamusoro zvinhu.
Iyo yekukura maitiro esilicon carbide ndiyo ibwe repakona rekushandisa kwayo uye kusimudzira. Kuburikidza nekuenderera mberi kwehunyanzvi hwekuvandudza tekinoroji uye optimization, idzi nzira nhatu dzekukura dzinotamba mabasa adzo akasiyana kuti asangane nezvinodiwa zvezviitiko zvakasiyana, kuve nechokwadi chinzvimbo chakakosha chesilicon carbide. Nekudzika kwekutsvagisa uye kufambira mberi kwetekinoroji, maitiro ekukura kwesilicon carbide zvinhu acharamba achigadziriswa, uye kushanda kwemidziyo yemagetsi kuchavandudzwa.
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Nguva yekutumira: Jun-23-2024