Safiri ikristaro imwechete yealumina, ndeye tripartite crystal system, hexagonal chimiro, chimiro chekristaro chayo chinoumbwa nemaatomu matatu eokisijeni uye maviri maatomu ealuminium mucovalent bond type, yakarongedzwa padhuze, ine yakasimba bonding cheni uye lattice simba, nepo yayo. crystal yemukati inenge isina tsvina kana kukanganisa, saka ine yakanakisa magetsi ekudzivirira, kujeka, yakanaka yekupisa conductivity uye yakakwirira rigidity maitiro. Inoshandiswa zvakanyanya sehwindo rekuona uye yakakwirira kuita substrate zvinhu. Nekudaro, iyo molecular chimiro chesafire chakaomarara uye kune anisotropy, uye kukanganisa kune inoenderana hunhu hwemuviri kwakasiyanawo kwazvo pakugadzirisa uye kushandiswa kweakasiyana makristasi maratidziro, saka kushandiswa kwakasiyanawo. Kazhinji, sapire substrates inowanikwa muC, R, A uye M ndege mafambiro.
Kushandiswa kweC-ndege sapphire wafer
Gallium nitride (GaN) seyakakura bandgap yechitatu chizvarwa semiconductor, ine yakakura yakananga bhendi gap, yakasimba atomic bond, yakakwirira yekupisa conductivity, yakanaka kugadzikana kwekemikari (inenge isina kusvibiswa nechero acid) uye yakasimba anti-irradiation kugona, uye ine tarisiro yakakura mu kushandiswa kweoptoelectronics, tembiricha yakakwira uye zvishandiso zvemagetsi uye yakakwira frequency microwave zvishandiso. Zvisinei, nekuda kwekunyungudika kwepamusoro kweGaN, zvakaoma kuwana hukuru hukuru hwekristal zvinhu, saka nzira yakajairika ndeyekuita heteroepitaxy kukura pane mamwe ma substrates, ane zvinodiwa zvepamusoro kune substrate zvinhu.
Kuenzaniswa nesafire substratenezvimwe zviso zvekristaro, iyo lattice inogara isingaenderane mwero pakati peC-ndege (<0001> orientation) sapphire wafer uye mafirimu akaiswa mumapoka Ⅲ-Ⅴ uye Ⅱ-Ⅵ (akadai seGaN) idiki, uye lattice inogara isingaenderane. chiyero pakati pezviviri neAlN mafirimuiyo inogona kushandiswa sebuffer layer yakatodiki, uye inosangana nezvinodiwa zvekupisa tembiricha kuramba muGaN crystallization process. Naizvozvo, yakajairika substrate zvinhu zveGaN kukura, izvo zvinogona kushandiswa kugadzira chena / bhuruu / girini leds, laser diodes, infrared detectors uye zvichingodaro.
Zvakakodzera kutaura kuti iyo GaN firimu inokura paC-ndege sapphire substrate inokura pamwe neayo polar axis, kureva, kutungamira kweC-axis, iyo isiri yekukura kwekukura maitiro uye epitaxy process, yakaderera mutengo, yakagadzikana yemuviri. uye zvinhu zvemakemikari, asiwo zviri nani kugadzirisa kushanda. Maatomu eC-oriented sapphire wafer anosungirirwa muO-al-al-o-al-O hurongwa, ukuwo maM-oriented uye A-oriented sapphire makristasi anobatanidzwa mual-O-al-O. Nekuti Al-Al ine yakaderera bonding simba uye isina kusimba bonding pane Al-O, zvichienzaniswa neM-oriented uye A-oriented sapphire crystals, Kugadziriswa kweC-sapphire kunonyanya kuvhura Al-Al kiyi, iri nyore kugadzirisa. , uye inogona kuwana yepamusoro yepamusoro yepamusoro, uyezve kuwana zviri nani gallium nitride epitaxial quality, iyo inogona kuvandudza kunaka kwe-ultra-high kupenya chena / bhuruu LED. Kune rumwe rutivi, mafirimu akakura pamwe chete neC-axis ane zvinongoerekana zvaitika uye piezoelectric polarization madhara, zvichiita kuti simba remukati remagetsi rive mukati memafirimu (active layer quantum Wells), izvo zvinoderedza zvakanyanya kujeka kweGaN mafirimu.
A-ndege sapphire waferapplication
Nekuda kwekuita kwayo kwakaringana kuita, kunyanya kutapurirana kwakanakisa, safire imwe kristaro inogona kuwedzera infrared kupinza mhedzisiro, uye kuve yakanakira yepakati-infrared hwindo zvinhu, izvo zvave kushandiswa zvakanyanya mumauto mafotoelectric zvishandiso. Apo Sapphire iri polar plane (C plane) munzira yakajairika yechiso, inzvimbo isiri-polar. Kazhinji, mhando yeA-oriented sapphire crystal iri nani pane yeC-oriented crystal, ine zvishoma dislocation, zvishoma Mosaic chimiro uye akazara akazara makristaro, saka ine zviri nani kutapurirana chiedza kuita. Panguva imwecheteyo, nekuda kweAl-O-Al-O atomic bonding mode pandege a, kuoma uye kupfeka kuramba kweA-oriented sapphire kwakakwira zvakanyanya kupfuura iyo yeC-oriented sapphire. Naizvozvo, A-directional machipisi anonyanya kushandiswa semidziyo yehwindo; Uye zvakare, A safiro inewo yunifomu dielectric inogara uye yakakwirira insulation zvivakwa, saka inogona kuiswa kune yakasanganiswa microelectronics tekinoroji, asiwo nekukura kweakanakisa conductor, sekushandiswa kweTlBaCaCuO (TbBaCaCuO), Tl-2212, kukura. yeheterogeneous epitaxial superconducting mafirimu pacerium oxide (CeO2) safiro inoumba substrate. Nekudaro, zvakare nekuda kweiyo yakakura chisungo simba reAl-O, zvakanyanya kuoma kugadzirisa.
Kushandiswa kweR /M ndege yesafire chimedu
Iyo R-ndege ndiyo isiri-polar pamusoro pesafiri, saka shanduko munzvimbo yeR-ndege mumudziyo wesafire inopa iyo yakasiyana mechanical, thermal, magetsi, uye optical properties. Kazhinji, R-surface sapphire substrate inosarudzwa kune heteroepitaxial deposition yesilicon, kunyanya kune semiconductor, microwave uye microelectronics integrated circuit applications, mukugadzirwa kwemutobvu, zvimwe zvikamu zve superconducting, high resistance resistors, gallium arsenide inogona kushandiswawo R-. mhando substrate kukura. Parizvino, nekufarirwa kwemafoni akangwara uye mahwendefa emakombuta masystem, R-face sapphire substrate yakatsiva iyo iripo komputa SAW zvishandiso zvinoshandiswa kune smart mafoni uye piritsi makomputa, ichipa substrate yemidziyo inogona kuvandudza mashandiro.
Kana pane kukanganisa, bata bvisa
Nguva yekutumira: Jul-16-2024