Safira ikristaro imwe chete yealumina, ndeye tripartite crystal system, chimiro chehexagonal, chimiro chayo chekristaro chine maatomu matatu eokisijeni nemaatomu maviri ealuminium mumhando ye covalent bond, akarongwa zvakanyanya, ane simba rakasimba rekubatanidza uye lattice energy, nepo mukati mayo mukristaro musina tsvina kana zvikanganiso, saka ine insulation yakanaka yemagetsi, kujeka, conductivity yakanaka yekupisa uye hunhu hwepamusoro hwekuoma. Inoshandiswa zvakanyanya se optical window uye high performance substrate materials. Zvisinei, chimiro chemorekuru chesafira chakaoma uye kune anisotropy, uye kukanganisa pahunhu hwemuviri hunoenderana kwakasiyanawo pakugadzirisa nekushandisa nzira dzakasiyana dzekristaro, saka kushandiswa kwakasiyanawo. Kazhinji, substrates dzesafira dzinowanikwa muC, R, A uye M plane directions.
Kushandiswa kweWafer yesafire yeC-plane
Gallium nitride (GaN) sechikamu chechitatu che "wide bandgap" chakafara, ine "wide direct band gap", "strong atomic bond", "high thermal conductivity", "good chemical stability" (isingasvibiswe neacid) uye "anti-irradiation ability", uye ine mikana yakawanda mukushandiswa kwe "optoelectronics", "high temperature" uye "power devices" pamwe ne "high frequency microwave devices". Zvisinei, nekuda kwekunyunguduka kwakanyanya kweGaN, zvakaoma kuwana "large-size single crystal materials", saka nzira yakajairika ndeyekuita "heteroepitaxy growth" pane dzimwe substrates, dzine zvinodiwa zvakanyanya zve substrate materials.
Zvichienzaniswa nesubstrate yesafiriNemamwe makristaro, mwero wekusawirirana pakati peC-plane (<0001> orientation) sapphire wafer nemafirimu akaiswa mumapoka Ⅲ-Ⅴ uye Ⅱ-Ⅵ (akadai seGaN) mudiki, uye mwero wekusawirirana pakati pemaviri neMafirimu eAlNIyo inogona kushandiswa se buffer layer idiki zvikuru, uye inosangana nezvinodiwa zvekudzivirira kupisa kwakanyanya muGaN crystallization process. Saka, chinhu chinowanzo shandiswa pakukura kweGaN, chinogona kushandiswa kugadzira ma LED machena/bhuruu/girini, laser diodes, infrared detectors nezvimwewo.
Zvakakosha kutaura kuti firimu reGaN rinokura paC-plane sapphire substrate rinokura pamwe chete ne polar axis yaro, kureva kuti, divi reC-axis, iro risiri chete nzira yekukura yakakura uye epitaxy process, mutengo wakaderera, hunhu hwakagadzikana hwemuviri uye hwemakemikari, asiwo mashandiro ari nani ekugadzirisa. Maatomu eC-oriented sapphire wafer akabatanidzwa muchirongwa cheO-al-al-o-al-O, nepo makristaro esapphire ane M-oriented neA-oriented akabatanidzwa mu al-O-al-O. Nekuti Al-Al ine simba shoma rekubatanidza uye bonding isina kusimba pane Al-O, zvichienzaniswa nemakristaro esapphire ane M-oriented neA-oriented, Kugadziriswa kweC-sapphire kunonyanya kuvhura kiyi yeAl-Al, iyo iri nyore kugadzirisa, uye inogona kuwana mhando yepamusoro yepamusoro, uye yozowana gallium nitride epitaxial quality iri nani, iyo inogona kuvandudza mhando ye ultra-high brightness white/blue LED. Kune rumwe rutivi, mafirimu anokura pamwe chete neC-axis ane mhedzisiro yepolarization inongoerekana yaitika uye yepiezoelectric, zvichikonzera simba guru remagetsi mukati memafirimu (active layer quantum Wells), izvo zvinoderedza zvikuru kushanda zvakanaka kwemafirimu eGaN.
Wafer yesafire yendege ine jira reA-planechikumbiro
Nekuda kwekushanda kwayo kwakazara, kunyanya kufambiswa kwakanaka, kristaro imwe chete yesapphire inogona kuwedzera infrared penetration effect, uye kuva chinhu chakakodzera chehwindo repakati peinfrared, icho chave chichishandiswa zvakanyanya mumidziyo yemagetsi yemauto. Apo Sapphire iri polar plane (C plane) iri munzira yakajairika yechiso, inzvimbo isina polar. Kazhinji, mhando yekristaro yesapphire ine A-oriented iri nani pane yeC-oriented crystal, ine dislocation shoma, chimiro cheMosaic chidiki uye chimiro chakazara chekristaro, saka ine mashandiro ari nani ekutumira chiedza. Panguva imwe chete, nekuda kweAl-O-Al-O atomic bonding mode paplane a, kuomarara uye kusakara kwesapphire ine A-oriented kwakakwira zvakanyanya kupfuura kweC-oriented sapphire. Nokudaro, machipisi eA-directional anonyanya kushandiswa sezvinhu zvehwindo; Pamusoro pezvo, A sapphire inewo hunhu hwakafanana hwe dielectric constant uye high insulation, saka inogona kushandiswa kune tekinoroji ye hybrid microelectronics, asiwo pakukura kwema conductors akanaka kwazvo, akadai sekushandiswa kweTlBaCaCuO (TbBaCaCuO), Tl-2212, kukura kwemafirimu akasiyana-siyana epitaxial superconducting pa cerium oxide (CeO2) sapphire composite substrate. Zvisinei, nekuda kwesimba guru reAl-O2, zvinonetsa kugadzirisa.
Kushandiswa kweR/M plane safaya wafer
Iyo R-plane inzvimbo isina polar yesafire, saka kuchinja kwenzvimbo yeR-plane muchishandiso chesafire kunoita kuti ive nehunyanzvi hwakasiyana hwemakanika, hwekupisa, hwemagetsi, uye hwekuona. Kazhinji, substrate yesafire yeR-surface inofarirwa kuiswa kwesilicon heteroepitaxial, kunyanya yekushandiswa kwe semiconductor, microwave uye microelectronics integrated circuit, mukugadzirwa kwelead, zvimwe zvikamu zve superconducting, high resistor resistance, gallium arsenide inogonawo kushandiswa pakukura kwe substrate yeR-type. Parizvino, nekuzivikanwa kwemafoni akangwara uye masisitimu emakombiyuta epiritsi, substrate yesafire yeR-face yakatsiva zvishandiso zveSAW zviripo zvinoshandiswa pafoni akangwara uye makombiyuta epiritsi, zvichipa substrate yemidziyo inogona kuvandudza mashandiro.
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Nguva yekutumira: Chikunguru-16-2024