N-Type SiC paSi Composite Substrates Dia6inch
| 等级Giredhi | U 级 | P级 | D级 |
| Low BPD Giredhi | Kugadzira Giredhi | Dummy Grade | |
| 直径Diameter | 150.0 mm±0.25mm | ||
| 厚度Ukobvu | 500 μm±25μm | ||
| 晶片方向Wafer Orientation | Kunze kweaxis : 4.0° kuenda <11-20 > ±0.5° nokuda kwe4H-N Paakisi : <0001>±0.5°ye4H-SI | ||
| 主定位边方向Primary Flat | {10-10}±5.0° | ||
| 主定位边长度Primary Flat Length | 47.5 mm±2.5 mm | ||
| 边缘Kusabatanidzwa kumucheto | 3 mm | ||
| 总厚度变化/弯曲度/翘曲度 TTV/Bow /Warp | ≤15μm /≤40μm /≤60μm | ||
| 微管密度和基面位错MPD&BPD | MPD≤1 cm-2 | MPD≤5 cm-2 | MPD≤15 cm-2 |
| BPD≤1000cm-2 | |||
| 电阻率Resistivity | ≥1E5 Ω·cm | ||
| 表面粗糙度Kukasharara | Polish Ra≤1 nm | ||
| CMP Ra≤0.5 nm | |||
| 裂纹(强光灯观测) # | Hapana | Cumulative kureba ≤10mm, single kureba≤2mm | |
| Kutsemuka nechiedza chakanyanya | |||
| 六方空洞（强光灯观测）* | Yakawedzerwa nzvimbo ≤1% | Yakawedzerwa nzvimbo ≤5% | |
| Hex Plates nechiedza chakanyanya kusimba | |||
| 多型(强光灯观测)* | Hapana | Cumulative area≤5% | |
| Nzvimbo dzePolytype nechiedza chakanyanya | |||
| 划痕(强光灯观测)*& | 3 kukwenya kune 1 × wafer dhayamita | 5 kukwenya kune 1 × wafer dhayamita | |
| Kukwenya nechiedza chakanyanya | kuwedzera urefu | kuwedzera urefu | |
| 崩边# Edge chip | Hapana | 5 inotenderwa, ≤1 mm imwe neimwe | |
| 表面污染物（强光灯观测） | Hapana | ||
| Kusvibiswa nechiedza chepamusoro | |||
Detailed Diagram
