N-Type SiC paSi Composite Substrates Dia6inch
| 等级Giredhi | U 级 | P级 | D级 |
| Giredhi reBPD Rakaderera | Giredhi reKugadzira | Giredhi reDummy | |
| 直径Dhayamita | 150.0 mm±0.25mm | ||
| 厚度Ukobvu | 500 μm±25μm | ||
| 晶片方向Kudzidziswa kweWafer | Kubvisa axis: 4.0°kunanga < 11-20 > ± 0.5°kuna 4H-N Pa axis: <0001>± 0.5°kuna 4H-SI | ||
| 主定位边方向Furati Yekutanga | {10-10}±5.0° | ||
| 主定位边长度Hurefu Hwepamusoro-soro | 47.5 mm±2.5 mm | ||
| 边缘Kusabatanidzwa kwemucheto | 3 mm | ||
| 总厚度变化/弯曲度/翘曲度 TTV/Bow /Warp | ≤15μm /≤40μm /≤60μm | ||
| 微管密度和基面位错MPD neBPD | MPD≤1 cm-2 | MPD≤5 cm-2 | MPD≤15 cm-2 |
| BPD≤1000cm-2 | |||
| 电阻率Kuramba | ≥1E5 Ω·cm | ||
| 表面粗糙度Kuomarara | ChiPolish Ra≤1 nm | ||
| CMP Ra≤0.5 nm | |||
| 裂纹(强光灯观测) # | Hapana | Kureba kwakaunganidzwa ≤10mm, kureba kumwe chete ≤2mm | |
| Kutsemuka nechiedza chakasimba | |||
| 六方空洞（强光灯观测）* | Nzvimbo yakaunganidzwa ≤1% | Nzvimbo yakaunganidzwa ≤5% | |
| Hex Plates nechiedza chakasimba kwazvo | |||
| 多型(强光灯观测)* | Hapana | Nzvimbo yakaunganidzwa ≤5% | |
| Nzvimbo dzePolytype nechiedza chakasimba | |||
| 划痕(强光灯观测)*& | Kukwenya katatu kusvika pa1 × dhayamita yewafer | Kukwenya 5 kusvika 1 × dhayamita yewafer | |
| Kukwenya nechiedza chakasimba | kureba kwakaunganidzwa | kureba kwakaunganidzwa | |
| 崩边# Chip yemucheto | Hapana | 5 inobvumirwa, ≤1 mm imwe neimwe | |
| 表面污染物（强光灯观测） | Hapana | ||
| Kusvibiswa nechiedza chakasimba | |||
Dhayagiramu Yakadzama
