N-Type SiC Composite Substrates Dia6inch Yepamusoro mhando monocrystaline uye yakaderera mhando substrate

Tsanangudzo Pfupi:

N-Type SiC Composite Substrates ndeye semiconductor zvinhu zvinoshandiswa mukugadzira zvigadzirwa zvemagetsi. Aya ma substrates anogadzirwa kubva kusilicon carbide (SiC), komboni inozivikanwa nekunaka kwayo yekupisa conductivity, yakakwira breakdown voltage, uye kuramba kune yakaoma mamiriro ezvakatipoteredza.

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N-Type SiC Composite Substrates Yakajairwa parameter tafura

项目Items	指标Tsanangudzo	项目Items	指标Tsanangudzo
直径Diameter	150±0.2mm	正面 ( 硅面 ) 粗糙度 Mberi (Si-face)hushasha	Ra≤0.2nm (5μm*5μm)
晶型Polytype	4H	Edge Chip, Scratch, Crack (kutarisa kwekuona)	Hapana
电阻率Resistivity	0.015-0.025ohm ·cm	总厚度变化TTV	≤3μm
Kutamisa layer Hukobvu	≥0.4μm	翘曲度Warp	≤35μm
空洞Void	≤5ea/wafer (2mm>D>0.5mm)	总厚度Ukobvu	350±25μm

Iyo "N-mhando" zita rinoreva mhando yedoping inoshandiswa muSiC zvinhu. Mune semiconductor physics, doping inosanganisira kusuma nemaune kwetsvina kuita semiconductor kuti ichinje magetsi ayo. N-mhando yedoping inosuma zvinhu zvinopa kuwanda kwemaerekitironi emahara, zvichipa iwo zvinhu kusajairika kuchaja mutakuri.

Zvakanakira zveN-mhando SiC composite substrates zvinosanganisira:

1. High-temperature performance: SiC ine high thermal conductivity uye inogona kushanda pakupisa kwepamusoro, zvichiita kuti ive yakakodzera kushandiswa kwemagetsi emagetsi epamusoro-soro uye e-frequency.

2. High breakdown voltage: SiC zvinhu zvine high breakdown voltage, zvichiita kuti zvikwanise kumira minda yemagetsi yakawanda pasina kuparara kwemagetsi.

3. Mushonga wemakemikari uye kwezvakatipoteredza: SiC inopikisa kemikemikari uye inogona kumira nemamiriro ezvinhu akaoma ezvakatipoteredza, zvichiita kuti ive yakakodzera kushandiswa mumapurogiramu akaoma.

4. Kurasikirwa kwesimba kwakaderedzwa: Kuenzaniswa neyakagadzirwa nesilicon-based materials, SiC substrates inogonesa kushanduka kwesimba kunobudirira uye kuderedza kurasikirwa kwemagetsi mumagetsi emagetsi.

5. Wide bandgap: SiC ine bandgap yakakura, inobvumira kugadzirwa kwezvigadzirwa zvemagetsi zvinogona kushanda pakupisa kwepamusoro uye simba repamusoro.

Pakazere, N-mhando yeSiC composite substrates inopa mabhenefiti akakosha ekugadzirwa kwezvigadzirwa zvemagetsi zvinonyanya kushanda, kunyanya mumashandisirwo apo kushanda kwepamusoro-tembiricha, kusimba kwemagetsi, uye kushandurwa kwesimba kwakakosha.

Zvakapfuura: Semi-Insulating SiC paSi Composite Substrates

Zvinotevera: Imwe Crystal Silicon Wafer Si Substrate Type N/P Optional Silicon Carbide Wafer

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