N-Type SiC Composite Substrates Dia6inch Monocrystalline yemhando yepamusoro uye substrate yemhando yepamusoro isina kunaka

Tsananguro pfupi:

N-Type SiC Composite Substrates imhando ye semiconductor inoshandiswa mukugadzira zvishandiso zvemagetsi. Idzi substrates dzakagadzirwa nesilicon carbide (SiC), compound inozivikanwa nekugona kwayo kupisa zvakanaka, voltage yakakwira, uye kuramba mamiriro ekunze akaomarara.


Zvinhu zvirimo

Tafura yeN-Type SiC Composite Substrates Common parameter

项目Zvinhu 指标Tsanangudzo 项目Zvinhu 指标Tsanangudzo
直径Dhayamita 150±0.2mm ( 硅 面 ) 粗 糙 度
Kukombama kwepamberi (Si-face)
Ra≤0.2nm (5μm*5μm)
晶型Mhando yePolytype 4H Edge Chip, Kukwenya, Kutsemuka (kutarisa nemaziso) Hapana
电阻率Kuramba 0.015-0.025ohm ·cm 总厚度变化TTV ≤3μm
Ukobvu hwechitamisiro ≥0.4μm 翘曲度Kukombama ≤35μm
空洞Hapana chinhu ≤5ea/wafer (2mm>D>0.5mm) 总厚度Ukobvu 350±25μm

Zita rekuti "N-type" rinoreva rudzi rwekushandisa zvinodhaka zvinoshandiswa muzvinhu zveSiC. Mufizikisi yesemiconductor, kushandisa zvinodhaka kunosanganisira kuisa tsvina nemaune mu semiconductor kuti ichinje hunhu hwayo hwemagetsi. Kushandisa zvinodhaka zveN-type kunounza zvinhu zvinopa maerekitironi akawanda, zvichiita kuti zvinhu zvive negative charge carrier concentration.

Zvakanakira zveN-type SiC composite substrates zvinosanganisira:

1. Kushanda zvakanaka pakupisa kwakanyanya: SiC ine simba rekupisa rakawanda uye inogona kushanda pakupisa kwakanyanya, zvichiita kuti ive yakakodzera kushandiswa kwemagetsi ane simba rakawanda uye mafrequency akawanda.

2. Voltage yakanyanya kupwanyika: Zvinhu zveSiC zvine voltage yakanyanya kupwanyika, zvichiita kuti zvikwanise kutsungirira magetsi akawanda pasina kupwanyika kwemagetsi.

3. Kusabatwa nemakemikari uye nharaunda: SiC inodzivirira makemikari uye inogona kutsungirira mamiriro ekunze akaoma, zvichiita kuti ive yakakodzera kushandiswa mumabasa akaoma.

4. Kurasikirwa kwesimba kushoma: Zvichienzaniswa nezvinhu zvechinyakare zvakagadzirwa nesilicon, SiC substrates dzinogonesa kushandurwa kwesimba zviri nani uye dzinoderedza kurasikirwa kwesimba mumidziyo yemagetsi.

5. Kureba kwebhandi: SiC ine mukana wakakura webhandi, zvichibvumira kugadzirwa kwemidziyo yemagetsi inogona kushanda pakupisa kwakanyanya uye simba rakawanda.

Kazhinji, ma substrates emhando yeN-SiC anopa mabhenefiti makuru pakugadzira michina yemagetsi inoshanda zvakanyanya, kunyanya mumashandisirwo ayo kushanda tembiricha yepamusoro, kuwanda kwesimba rakawanda, uye kushandurwa kwesimba zvinobudirira zvakakosha.


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