LiTaO3 Lithium Tantalate Ingots ine Fe/Mg Doping Yakagadzirirwa 4inch 6inch 8inch yeIndustrial Sensing

Tsanangudzo Pfupi:

LiTaO3 Ingots (Lithium Tantalate Ingots), semidziyo yakakosha yechizvarwa chechitatu-yakafara-bandgap semiconductors uye optoelectronics, inowedzera tembiricha yavo yepamusoro yeCurie (607).°C), kujeka kwakakura (400-5,200 nm), yakanakisa electromechanical coupling coefficient (Kt²> 15%), uye yakaderera dielectric kurasikirwa (tanδ <2%) kushandura 5G kutaurirana, quantum computing, uye photonic kubatanidzwa. Kuburikidza nehunyanzvi hwekugadzira matekinoroji senge mhute yekufambisa (PVT) uye kemikari vapor deposition (CVD), tinopa X/Y/Z-cut, 42°Y-cut, uye periodically poled (PPLT) ingots mu3–8-inch specifications, ine micropipe density <0.1 cm⁻² uye dislocation <0.1 cm⁻² uye dislocation. Masevhisi edu anosanganisira Fe/Mg doping, proton exchange waveguides, uye silicon-based heterogeneous integration (POI), kugadzirisa mafirita epamusoro-soro, quantum light sources, uye infrared detectors. Ichi chinyorwa chinotyaira mabudiro mu miniaturization, yakakwirira-frequency mashandiro, uye kugadzikana kwekupisa, kukurumidza kutsiva mudzimba uye kufambira mberi kwetekinoroji.

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Features

Technical parameters

Tsanangudzo	Conventional	High Precision
Zvishandiso	LiTaO3(LT)/ LiNbO3 zvimedu	LiTaO3(LT)/LiNbO3 zvimedu
Orientation	X-112°Y,36°Y,42°Y±0.5°	X-112°Y,36°Y,42°Y±0.5°
Parallel	30″	10''
Perpendicular	10′	5'
pamusoro Quality	40/20	20/10
Wavefront Distortion	λ/4@632nm	λ/8@632nm
Surface Flatness	λ/4@632nm	λ/8@632nm
Clear Aperture	>90%	>90%
Chamfer	<0.2×45°	<0.2×45°
Hukobvu/Diameter Tolerance	±0.1 mm	±0.1 mm
Maximum dimensions	dia150 × 50mm	dia150 × 50mm

XKH Services

1. Yakakura-Scale Ingot Fabrication.

Saizi uye Kucheka: 3-8-inch ingots ine X/Y/Z-yakachekwa, 42°Y-cheka, uye tsika angular kucheka (± 0.01 ° kushivirira).

Doping Control: Fe/Mg co-doping kuburikidza neCzochralski nzira (concentration range 10¹⁶–10¹⁹ cm⁻³) kukwidziridza photorefractive kuramba uye kugadzikana kwekupisa.

2. Advanced Process Technologies.

Heterogeneous Integration: Silicon-based LiTaO3 composite wafers (POI) ine gobvu control (300-600 nm) uye thermal conductivity inosvika 8.78 W/m·K ye-high-frequency SAW mafirita.

Waveguide Fabrication: Proton exchange (PE) uye reverse proton exchange (RPE) maitiro, kubudirira submicron waveguides (Δn> 0.7) ye-high-speed electro-optic modulators (bandwidth> 40 GHz).

3. Quality Management Systems

Kupera-ku-End Testing: Raman spectroscopy (polytype verification), XRD (crystallinity), AFM (surface morphology), uye optical uniformity test (Δn <5 × 10⁻⁵).

4. Global Supply Chain Support

Kukwanisa Kugadzira: Mwedzi unobuda> 5,000 ingots (8-inch: 70%), inotsigira 48-awa yekukurumidza kuendesa.

Logistics Network: Kuvharwa muEurope, North America, uye Asia-Pacific kuburikidza nemhepo/mugungwa kutakura netembiricha-inodzorwa kurongedza.

5. Technical Co-Development

Joint R&D Labs: Bata pamwe pamafotonic ekubatanidza mapuratifomu (semuenzaniso, SiO2 yakaderera-kurasikirwa layer bonding).

Summary

LiTaO3 Ingots inoshanda seyakarongeka zvinhu zvinogadzirisa optoelectronics uye quantum tekinoroji. Kuburikidza nehunyanzvi mukukura kwekristaro (semuenzaniso, PVT), kuderedza kukanganisa, uye kusanganisa kwakasiyana-siyana (semuenzaniso, POI), tinopa kuvimbika kwepamusoro, mhinduro dzinodhura dze5G/6G kutaurirana, quantum computing, uye maindasitiri IoT. XKH kuzvipira kusimudzira ingot defect kudzikisira uye kuyera 8-inch kugadzirwa kunoita kuti vatengi vatungamire mumaketani epasi rose, vachityaira nguva inotevera yehupamhi-bandgap semiconductor ecosystems.