InSb wafer 2inch 3inch undoped Ntype P mhando yekutarisa 111 100 yeInfrared Detectors
Features
Doping Options:
1.Kusavhurwa:Aya mawafesi haana mahara kubva kune chero maajenti edoping uye anonyanya kushandiswa kune akasiyana maapplication senge epitaxial kukura, uko wafer inoita seyakachena substrate.
2.N-Type (Te Doped):Tellurium (Te) doping inoshandiswa kugadzira N-type wafers, ichipa high electron mobility uye kuita kuti ive yakakodzera kune infrared detectors, high-speed electronics, uye mamwe maapplication anoda kushanda kweelectronic.
3.P-Type (Ge Doped):Germanium (Ge) doping inoshandiswa kugadzira P-type wafers, inopa yakakwira gomba kufamba uye inopa kuita kwakanakisa kwema infrared sensors uye mafotodetectors.
Saizi Sarudzo
1.The wafers anowanikwa 2-inch uye 3-inch diameters. Izvi zvinogonesa kuenderana neakasiyana semiconductor ekugadzira maitiro uye zvishandiso.
2.Iyo 2-inch wafer ine dhayamita 50.8±0.3mm, ukuwo 3-inch wafer ine 76.2±0.3mm dhayamita.
Oriental:
1.Mafukirwo anowanikwa nemaitiro e100 uye 111. Kutarisa kwe100 kwakakodzera kune yakakwirira-speed electronics uye infrared detectors, nepo 111 yakatarisa inowanzoshandiswa kune zvigadzirwa zvinoda chaiwo magetsi kana optical properties.
Surface Quality:
1.Izvi zvakapfava zvinouya neyakakwenenzverwa / yakamisikidzwa nzvimbo dzemhando yepamusoro, zvichiita kuti iite yakakwana mumashandisirwo anoda chaiyo optical kana magetsi maitiro.
2.Kugadzirira kwepamusoro kunovimbisa kuderera kwehurema, zvichiita kuti zviputi izvi zvive zvakanaka kune infrared zvikumbiro zvekutsvaga apo kushanda kwekuita kunokosha.
Epi-Yakagadzirira:
1. Aya mawafer akagadzirira epi, zvichiita kuti aenderane nezvikumbiro zvinosanganisira epitaxial kukura apo mamwe maturu ezvinhu anozoiswa pawafer ye advanced semiconductor kana optoelectronic mudziyo wekugadzira.
Applications
1.Infrared Detectors:InSb wafers anoshandiswa zvakanyanya mukugadzirwa kwe infrared detectors, kunyanya pakati-wavelength infrared (MWIR) renji. Izvo zvakakosha kune masisitimu ekuona husiku, kufungidzira kwekupisa, uye kushandiswa kwechiuto.
2.Infrared Imaging Systems:Iyo yakanyanya kunzwisiswa yeInSb wafers inobvumira chaiyo infrared imaging muzvikamu zvakasiyana, kusanganisira chengetedzo, kuongorora, uye kutsvagisa kwesainzi.
3.High-Speed Electronics:Nekuda kwekufamba kwadzo kwerekitironi yakakwira, mawafer aya anoshandiswa mumidziyo yemagetsi yepamusoro senge high-speed transistors uye optoelectronic zvishandiso.
4.Quantum Well Devices:InSb wafers akanakira quantum tsime kunyorera mumalaser, ma detectors, uye mamwe optoelectronic masisitimu.
Product Parameters
| Parameter | 2-inch | 3-inch |
| Diameter | 50.8±0.3mm | 76.2±0.3mm |
| Ukobvu | 500±5μm | 650±5μm |
| Surface | Polished/Etched | Polished/Etched |
| Doping Type | Yakasunungurwa, Te-doped (N), Ge-doped (P) | Yakasunungurwa, Te-doped (N), Ge-doped (P) |
| Orientation | 100, 111 | 100, 111 |
| Package | Single | Single |
| Epi-Ready | Ehe | Ehe |
Magetsi Parameters eTe Doped (N-Type):
- Mobility: 2000-5000 cm²/V·s
- Resistivity: (1-1000) Ω·cm
- EPD (Defect Density): ≤2000 kukanganisa/cm²
Magetsi Parameters eGe Doped (P-Type):
- Mobility: 4000-8000 cm²/V·s
- Resistivity: (0.5-5) Ω·cm
EPD (Defect Density): ≤2000 kukanganisa/cm²
Q&A (Mibvunzo Inowanzo bvunzwa)
Q1: Ndeipi yakanakira doping mhando ye infrared yekuona maapplication?
A1:Te-doped (N-mhando)mawaferi ndiwo anowanzo sarudzo yakanakira infrared yekuona maapplication, sezvo iwo achipa yakakwira erekitironi kufamba uye kuita kwakanakisa mukati me-wavelength infrared (MWIR) detectors uye imaging system.
Q2: Ndinogona kushandisa mawafer aya kune akakwira-kumhanya emagetsi application?
A2: Hongu, InSb wafers, kunyanya avo vaneN-mhando dopinguye100 orientation, inonyatsokodzera zvemagetsi zvinomhanya-mhanya senge transistors, quantum well devices, uye optoelectronic components nekuda kwekukwirira kweelectronic mobility.
Q3: Ndeupi misiyano pakati pezana uye 111 maitiro eInSb wafers?
A3: iye100orientation inowanzoshandiswa kumidziyo inoda kumhanyisa kwemagetsi kuita, ukuwo111kutarisisa kunowanzo shandiswa kune chaiwo maapplication anoda akasiyana emagetsi kana emeso maitiro, kusanganisira mamwe maoptoelectronic zvishandiso nemasensor.
Q4: Chii chakakosha cheEpi-Ready chimiro cheInSb wafers?
A4: iyeEpi-Readychimiro chinoreva kuti wafer yakafanogadziriswa epitaxial deposition process. Izvi zvakakosha kune maapplication anoda kukura kwemamwe zvidimbu zvezvinhu pamusoro pewafer, senge mukugadzirwa kwe advanced semiconductor kana optoelectronic zvishandiso.
Q5: Ndeapi akajairika mashandisirwo eInSb wafers mumunda weinfrared tekinoroji?
A5: InSb wafers anonyanya kushandiswa mukuona infrared, thermal imaging, husiku kuona masisitimu, uye humwe hunyanzvi hwekunzwa tekinoroji. Kunzwa kwavo kwepamusoro uye ruzha rwakaderera runovaita vakanakiraMid-wavelength infrared (MWIR)michina.
Q6: Kukora kwewafe kunokanganisa sei kuita kwayo?
A6: Ukobvu hwewafesi hunoita basa rakakosha mukugadzikana kwayo kwemagetsi uye maitiro emagetsi. Mawaferi akaonda anowanzo shandiswa mune zvakanyanya kusimba maapplication uko kunodiwa kutonga chaiko pamusoro pezvinhu zvenyama, nepo mawafer akakora achipa kusimba kwakawedzerwa kune mamwe maindasitiri maapplication.
Q7: Ndinosarudza sei saizi yakakodzera yewafer yechishandiso changu?
A7: Saizi yakakodzera yewafer zvinoenderana nechaiyo mudziyo kana sisitimu iri kugadzirwa. Mawafer madiki (2-inch) anowanzo kushandiswa kutsvagisa uye madiki-scale application, nepo mawafer mahombe (3-inch) anowanzo shandiswa kugadzira hukuru uye michina mikuru inoda zvimwe zvinhu.
Mhedziso
InSb wafers mukati2-inchuye3-inchsaizi, neundoped, N-mhando,uyeP-mhandokusiyana, kwakakosha zvakanyanya mu semiconductor uye optoelectronic application, kunyanya mumasisitimu ekuona infrared. The100uye111kutarisisa kunopa kuchinjika kune zvakasiyana siyana zvinodiwa zvetekinoroji, kubva kumagetsi ekumhanya kusvika kune infrared imaging system. Nekufamba kwavo kwerekitironi, ruzha rwakaderera, uye hunhu hwepamusoro, aya mawafer akanakira.mid-wavelength infrared detectorsuye mamwe maapplication epamusoro-soro.
Detailed Diagram
