Mawafer eIndium Antimonide (InSb) N type P type Epi ready undoped Te doped kana Ge doped 2inch 3inch 4inch thickness Indium Antimonide (InSb) wafers

Tsananguro pfupi:

Mawafer eIndium Antimonide (InSb) chinhu chakakosha mukushandiswa kwemagetsi nemagetsi epamusoro. Mawafer aya anowanikwa mumhando dzakasiyana-siyana, kusanganisira N-type, P-type, uye undoped, uye anogona kuiswa zvinhu zvakaita seTellurium (Te) kana Germanium (Ge). Mawafer eInSb anoshandiswa zvakanyanya mukuona infrared, high-speed transistors, quantum well devices, uye mamwe mashandisirwo akakosha nekuda kwekufamba kwawo kwakanaka kwemaerekitironi uye bandgap yakamanikana. Mawafer aya anowanikwa mudhayamita dzakasiyana senge 2-inch, 3-inch, uye 4-inch, ane hukobvu hwakanyatsonaka uye nzvimbo dzakakwenenzverwa/dzakavezwa dzemhando yepamusoro.

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Zvinhu zvirimo

Sarudzo dzekushandisa zvinodhaka:
1. Yakabviswa:Mawafer aya haana mishonga inodhaka, zvichiita kuti akwanise kushandiswa zvakanyanya senge epitaxial growth.
2.Te Doped (N-Type):Kushandiswa kweTellurium (Te) doping kunowanzo shandiswa kugadzira mawafer emhando yeN, ayo akakodzera kushandiswa senge infrared detectors uye electronics dzinomhanya zvakanyanya.
3.Ge Doped (P-Type):Kushandiswa kweGermanium (Ge) doping kunoshandiswa kugadzira mawafer emhando yeP, zvichiita kuti pave nekufamba kwemaburi marefu kune mashandisirwo emhando yepamusoro ye semiconductor.

Sarudzo dzeSaizi:
1. Inowanikwa muhukuru hwe 2-inch, 3-inch, uye 4-inch. Mawafer aya anogutsa zvinodiwa zvakasiyana zvetekinoroji, kubva pakutsvagisa nekugadzira kusvika pakugadzira zvinhu zvakakura.
2. Kushivirirana kwedhayamita chaiyo kunoita kuti zvive nyore kushandisa, nedhayamita ye50.8±0.3mm (yemawafer ane 2-inch) uye 76.2±0.3mm (yemawafer ane 3-inch).

Kudzora Ukobvu:
1. Mawafer anowanikwa ane ukobvu hwe500±5μm kuti ashande zvakanaka mukushandiswa kwakasiyana-siyana.
2. Zvimwe zviyero zvakaita seTTV (Total Thickness Variation), BOW, uye Warp zvinodzorwa nokungwarira kuti zvive nechokwadi chekuti zvakafanana uye zvine mhando.

Hunhu hwepamusoro:
1. Mawafers aya anouya nepamusoro pakakweshwa/pakachekwa kuti awedzere kushanda zvakanaka kwemaziso uye magetsi.
2. Nzvimbo idzi dzakanakira kukura kwe epitaxial, zvichipa hwaro hwakatsetseka hwekugadzirisa zvimwe zvinhu mumidziyo inoshanda zvakanyanya.

Yakagadzirira Epi:
1. Mawafer eInSb akagadzirwa ne epi, zvichireva kuti akaiswa mushonga we epitaxial deposition processes. Izvi zvinoita kuti akwanise kushandiswa mukugadzira semiconductor uko epitaxial layers dzinofanira kurimwa pamusoro pewafer.

Mashandisirwo

1. Zvishandiso zveInfrared:Mawafer eInSb anowanzo shandiswa pakuona ma infrared (IR), kunyanya mu mid-wavelength infrared (MWIR). Mawafer aya akakosha pakuona husiku, thermal imaging, uye infrared spectroscopy.

2. Magetsi Anomhanya Nekukurumidza:Nekuda kwekufamba kwazvo kwemaerekitironi, mawafer eInSb anoshandiswa mumidziyo yemagetsi inomhanya zvikuru yakadai sematransistors ane mafrequency akawanda, michina yequantum well, uye matransistors ane maerekitironi akawanda (HEMTs).

3. Zvishandiso zveQuantum Well:Kusashanda zvakanaka kwema "bandgap" uye kufamba zvakanaka kwema "electron" zvinoita kuti ma "wafers" eInSb akwanise kushandiswa mumidziyo ye "quantum well". Midziyo iyi ndiyo inonyanya kukosha muma "laser", ma "detectors", uye mamwe ma "optoelectronic systems".

4. Zvishandiso zveSpintronic:InSb iri kuongororwawo mumashandisirwo e spintronic, uko electron spin inoshandiswa kugadzirisa ruzivo. Kubatana kwechinhu ichi kunoita kuti chive chakakodzera michina iyi inoshanda zvakanyanya.

5. Mashandisirwo eTerahertz (THz) Radiation:Midziyo inoshandiswa neInSb inoshandiswa mukushandiswa kwemwaranzi yeTHZ, kusanganisira kutsvagisa kwesainzi, kufungidzira, uye kutsanangura zvinhu. Inogonesa matekinoroji epamusoro akadai seTHZ spectroscopy uye THz imaging systems.

6. Zvishandiso zveThermoelectric:Hunhu hwakasiyana hweInSb hunoita kuti ive chinhu chinokwezva pakushandiswa kwemagetsi anodziya, uko inogona kushandiswa kushandura kupisa kuita magetsi zvinobudirira, kunyanya munzvimbo dzakaita semuchadenga kana kugadzira magetsi munzvimbo dzakaoma.

Zvimiro zveChigadzirwa

Paramita	2-inch	3-inch	4-inch
Dhayamita	50.8±0.3mm	76.2±0.3mm	-
Ukobvu	500±5μm	650±5μm	-
Pamusoro	Yakakweshwa/Yakavezwa	Yakakweshwa/Yakavezwa	Yakakweshwa/Yakavezwa
Rudzi rweDoping	Yakasunungurwa, Te-doped (N), Ge-doped (P)	Yakasunungurwa, Te-doped (N), Ge-doped (P)	Yakasunungurwa, Te-doped (N), Ge-doped (P)
Kudzidziswa	(100)	(100)	(100)
Pasuru	Kusaroora kana kuroorwa	Kusaroora kana kuroorwa	Kusaroora kana kuroorwa
Yakagadzirira Epi	Ehe	Ehe	Ehe

Maparamita emagetsi eTe Doped (N-Type):

Kufamba: 2000-5000 cm²/V·s
Kuramba: (1-1000) Ω·cm
EPD (Kuwanda Kwehurema): ≤2000 zvikanganiso/cm²

Maparamita emagetsi eGe Doped (P-Type):

Kufamba: 4000-8000 cm²/V·s
Kuramba: (0.5-5) Ω·cm
EPD (Kuwanda Kwehurema): ≤2000 zvikanganiso/cm²

Mhedziso

Mawafer eIndium Antimonide (InSb) chinhu chakakosha pakushandiswa kwakasiyana-siyana kwepamusoro-soro muminda yemagetsi, optoelectronics, uye matekinoroji einfrared. Nekufamba kwawo kwakanaka kwemaerekitironi, kubatana kwavo kwespin-orbit kwakaderera, uye sarudzo dzakasiyana-siyana dzedoping (Te yeN-type, Ge yeP-type), mawafer eInSb akanakira kushandiswa mumidziyo yakaita seinfrared detectors, high-speed transistors, quantum well devices, uye spintronic devices.

Mawafer aya anowanikwa muhukuru hwakasiyana-siyana (2-inch, 3-inch, uye 4-inch), ane hutongi hwakarurama hwekukora uye nzvimbo dzakagadzirira epi, zvichiita kuti asvike pazvinodiwa zvakanyanya zvekugadzirwa kwema semiconductor emazuva ano. Mawafer aya akakodzera kushandiswa munzvimbo dzakadai sekuona IR, electronics dzinomhanya zvakanyanya, uye THz radiation, zvichigonesa matekinoroji epamusoro mukutsvaga, indasitiri, uye kudzivirira.