Indium Antimonide (InSb) zvitete N mhando P mhando Epi yakagadzirira isina kuvharwa Te doped kana Ge doped 2inch 3inch 4inch ukobvu Indium Antimonide (InSb) zvitete

Tsanangudzo Pfupi

Indium Antimonide (InSb) wafers chinhu chakakosha mukushanda kwemagetsi uye optoelectronic application. Aya mawaferi anowanikwa mumhando dzakasiyana siyana, kusanganisira N-mhando, P-mhando, uye isina kuvharwa, uye anogona kugadzirwa nezvinhu zvakaita seTellurium (Te) kana Germanium (Ge). InSb wafers anoshandiswa zvakanyanya mukuonekwa kwe infrared, high-speed transistors, quantum tsime zvishandiso, uye mamwe maapplication akasarudzika nekuda kwekunaka kwavo kwemagetsi kufamba uye nhete bhendi. Iwo mawafer anowanikwa mumadhayamita akasiyana senge 2-inch, 3-inch, uye 4-inch, ane chaiyo ukobvu kutonga uye yepamusoro-mhando yakakwenenzverwa/yakaiswa nzvimbo.

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Features

Doping Options:
1.Kusavhurwa:Aya mawaferi akasununguka kubva kune chero maajenti edoping, achiita kuti ave akakodzera kune akasarudzika maapplication senge epitaxial kukura.
2.Te Doped (N-Type):Tellurium (Te) doping inowanzo shandiswa kugadzira N-type wafers, iyo yakanakira maapplication akadai se infrared detectors uye high-speed zvemagetsi.
3.Ge Doped (P-Type):Germanium (Ge) doping inoshandiswa kugadzira P-type wafers, inopa yakakwira gomba kufamba kwepamberi semiconductor application.

Saizi Sarudzo
1.Inowanikwa mu 2-inch, 3-inch, uye 4-inch diameters. Aya mawaferi anoenderana neakasiyana tekinoroji zvinodiwa, kubva pakutsvagisa nekusimudzira kusvika pakugadzira kukuru.
2.Precise dhayamita kushivirira kunovimbisa kuenderana mumabhechi, nemadhayamita e50.8±0.3mm (ye2-inch wafers) uye 76.2±0.3mm (ye3-inch wafers).

Kudzora Ukobvu:
1.The wafers anowanikwa nehupamhi hwe500±5μm kuitira kushanda kwakakwana mumashandisirwo akasiyana-siyana.
2.Kuwedzera zviyero zvakadai seTTV (Total Thickness Variation), BOW, uye Warp zvinonyatsodzorwa kuti zvive nechokwadi chekufanana kwepamusoro uye hutano.

Surface Quality:
1.Mafuremu anouya neakakwenenzverwa/etched surface for improved optical and magetsi.
2.Idzi nzvimbo dzakanakira epitaxial kukura, ichipa hwaro hwakatsetseka hwekuwedzera kugadziridzwa muzvigadzirwa zvepamusoro-soro.

Epi-Yakagadzirira:
1.The InSb wafers are epi-ready, zvichireva kuti dzakafanogadzirwa kuitira epitaxial deposition process. Izvi zvinoita kuti ive yakanakira maapplication mukugadzira semiconductor uko epitaxial layers inoda kukura pamusoro pewafer.

Applications

1.Infrared Detectors:InSb wafers anowanzo shandiswa mukuona infrared (IR), kunyanya pakati-wavelength infrared (MWIR) renji. Aya mawafer akakosha pakuonekwa kwehusiku, kupisa kwekufungidzira, uye infrared spectroscopy application.

2.High-Speed Electronics:Nekuda kwekufamba kwazvo maelectronic, mawaferi eInSb anoshandiswa mumidziyo yemagetsi inomhanya-mhanya senge high-frequency transistors, quantum well devices, uye high-electron mobility transistors (HEMTs).

3.Quantum Well Devices:Iyo nhete bhendi uye yakanakisa erekitironi kufamba kunoita InSb wafers akakodzera kushandiswa muquantum tsime zvishandiso. Zvishandiso izvi zvinhu zvakakosha mumalaser, ma detectors, uye mamwe maoptoelectronic masisitimu.

4.Spintronic Devices:InSb iri kuongororwawo mune spintronic application, uko maelectron spin anoshandiswa kugadzirisa ruzivo. Iyo yakaderera spin-orbit coupling inoita kuti ive yakanaka kune iyi yepamusoro-inoshanda michina.

5.Terahertz (THz) Radiation Applications:InSb-based madivayiri anoshandiswa muTHz radiation application, kusanganisira tsvakiridzo yesainzi, imaging, uye hunhu hwezvinhu. Vanogonesa matekinoroji epamberi senge THz spectroscopy uye THz imaging masisitimu.

6.Thermoelectric Devices:InSb yakasarudzika zvimiro inoita kuti ive chinhu chinoyevedza chekushandisa thermoelectric, kwainogona kushandiswa kushandura kupisa kuita magetsi nemazvo, kunyanya mukushandisa niche senge tekinoroji yemuchadenga kana kugadzirwa kwemagetsi munzvimbo dzakanyanyisa.

Product Parameters

Parameter	2-inch	3-inch	4-inch
Diameter	50.8±0.3mm	76.2±0.3mm	-
Ukobvu	500±5μm	650±5μm	-
Surface	Polished/Etched	Polished/Etched	Polished/Etched
Doping Type	Yakasunungurwa, Te-doped (N), Ge-doped (P)	Yakasunungurwa, Te-doped (N), Ge-doped (P)	Yakasunungurwa, Te-doped (N), Ge-doped (P)
Orientation	(100)	(100)	(100)
Package	Single	Single	Single
Epi-Ready	Ehe	Ehe	Ehe

Magetsi Parameters eTe Doped (N-Type):

Mobility: 2000-5000 cm²/V·s
Resistivity: (1-1000) Ω·cm
EPD (Defect Density): ≤2000 kukanganisa/cm²

Magetsi Parameters eGe Doped (P-Type):

Mobility: 4000-8000 cm²/V·s
Resistivity: (0.5-5) Ω·cm
EPD (Defect Density): ≤2000 kukanganisa/cm²

Mhedziso

Indium Antimonide (InSb) mawaferi chinhu chakakosha kune yakafararira-inoshanda maapplication mumunda wemagetsi, optoelectronics, uye infrared tekinoroji. Nekufamba kwavo maerekitironi kwakanakisa, kubatanidza kutenderera kwepasi, uye dzakasiyana siyana dzekuita doping (Te yeN-mhando, Ge yeP-mhando), InSb wafers akanakira kushandiswa mumidziyo yakadai sema infrared detectors, high-speed transistors, quantum well devices, uye spintronic devices.

Iwo mawafer anowanikwa muhukuru hwakasiyana (2-inch, 3-inch, uye 4-inch), iine chaiyo ukobvu kudzora uye epi-yakagadzirira nzvimbo, kuve nechokwadi kuti inosangana nezvinoda kuomarara zvemazuva ano semiconductor kugadzirwa. Aya mawaferi akakwana kune maapplication muminda senge IR yekuona, yakakwirira-kumhanya zvemagetsi, uye THz mwaranzi, inogonesa tekinoroji yepamberi mukutsvagisa, indasitiri, uye kudzivirira.