HPSI SiCOI wafer ine 4 6inch Hydropholic Bonding

HPSI SiCOI wafer 4 6inch Hydropholic Bonding Mufananidzo Wakaratidzwa

Tsananguro pfupi:

Mawafer eHPSI 4H-SiCOI anogadzirwa achishandisa matekinoroji epamusoro ekubatanidza uye kutetepa. Mawafer aya anogadzirwa nekubatanidza 4H HPSI silicon carbide substrates pa thermal oxide layers kuburikidza nenzira mbiri huru: hydrophilic (direct) bonding uye surface activated bonding. Iyi yekupedzisira inounza intermediate modified layer (yakadai se amorphous silicon, aluminium oxide, kana titanium oxide) kuti ivandudze bond quality uye kuderedza mabubbles, kunyanya akakodzera ma optical applications. Kudzora ukobvu hwesilicon carbide layer kunowanikwa kuburikidza ne ion implantation-based SmartCut kana grinding uye CMP polishing processes. SmartCut inopa high precision thickness uniformity (50nm–900nm ine ±20nm uniformity) asi inogona kukonzera kukuvara kudiki kwekristaro nekuda kwe ion implantation, zvichikanganisa mashandiro e optical device. Kukuya uye CMP polishing zvinodzivirira kukuvara kwezvinhu uye zvinofarirwa kune ma thicker films (350nm–500µm) uye quantum kana PIC applications, kunyangwe ine thickness shoma (±100nm). Mawafers akajairika ane masendimita matanhatu ane 1µm ±0.1µm SiC layer pa3µm SiO2 layer pamusoro pe675µm Si substrates ane kutsetseka kwepamusoro (Rq < 0.2nm). Aya mawafers eHPSI SiCOI anokodzera kugadzirwa kweMEMS, PIC, quantum, uye optical device ane mhando yepamusoro yezvinhu uye kushanduka kwemaitiro.

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Zvinhu zvirimo

Kuongororwa kweZvinhu zveSiCOI Wafer (Silicon Carbide-on-Insulator)

Mawafer eSiCOI imhando itsva ye semiconductor substrate inosanganisa Silicon Carbide (SiC) ne insulating layer, kazhinji SiO₂ kana sapphire, kuvandudza mashandiro emagetsi emagetsi, RF, uye photonics. Pazasi pane pfupiso yakadzama yehunhu hwavo hwakakamurwa muzvikamu zvakakosha:

Pfuma	Tsananguro
Kuumbwa Kwezvinhu	Rutivi rweSilicon Carbide (SiC) rwakabatanidzwa pane substrate inodzivira (kazhinji SiO₂ kana safaya)
Chimiro cheKristaro	Kazhinji 4H kana 6H polytypes dzeSiC, dzinozivikanwa nehukuru hwekristaro uye kufanana kwadzo.
Zvivakwa zveMagetsi	Simba remagetsi rakakanganiswa zvakanyanya (~3 MV/cm), gap rakafara (~3.26 eV ye4H-SiC), simba rekubuda kwemvura shoma
Kufambisa kwekupisa	Kupisa kwakanyanya (~300 W/m·K), zvichiita kuti kupisa kuparadzwe zvakanaka
Rutivi rweDielectric	Chidziviriro chekudzivirira (SiO₂ kana safaya) chinopa kupatsanurwa kwemagetsi uye chinoderedza kugona kwezvipembenene.
Zvivakwa zveMichina	Kuomarara kwakanyanya (~9 Mohs scale), simba rakanaka remakanika, uye kugadzikana kwekupisa
Kupedzisa Kwepamusoro	Kazhinji inotsvedzerera zvakanyanya uye ine denda shoma, yakakodzera kugadzirwa kwemudziyo
Mashandisirwo	Zvigadzirwa zvemagetsi zvemagetsi, zvishandiso zveMEMS, zvishandiso zveRF, masensa anoda tembiricha yakakwira uye kushivirira voltage

Mawafer eSiCOI (Silicon Carbide-on-Insulator) anomiririra chimiro chemhando yepamusoro che semiconductor substrate, chine silicon carbide (SiC) yakatetepa yepamusoro-soro yakabatana pane insulating layer, kazhinji silicon dioxide (SiO₂) kana safira. Silicon carbide i semiconductor ine bandwidth yakakura inozivikanwa nekukwanisa kwayo kutsungirira voltages yakakwira uye tembiricha yakakwira, pamwe chete nekupisa kwakanyanya uye kuomarara kwemakanika, zvichiita kuti ive yakakodzera kushandiswa kwemagetsi ane simba rakawanda, mafrequency akakwira, uye tembiricha yakakwira.

Chidziviriro chekudzivirira kupisa muSiCOI wafers chinoita kuti magetsi asashande zvakanaka, zvichideredza zvakanyanya kugona kwezvipembenene uye kubuda kwemvura pakati pemidziyo, zvichiita kuti mashandiro emidziyo yese awedzere uye kuvimbika. Pamusoro pewafers dzakakweshwa zvakanaka kuti dzive dzakapfava zvakanyanya dzisina zvikanganiso zvakawanda, zvichizadzisa zvinodiwa zvakanyanya zvekugadzirwa kwemidziyo midiki neyakagadzirwa nesimbi.

Maumbirwo aya haangogadzirisi chete hunhu hwemagetsi emidziyo yeSiC asiwo anowedzera zvakanyanya manejimendi yekupisa uye kugadzikana kwemuchina. Nekuda kweizvozvo, mawafer eSiCOI anoshandiswa zvakanyanya mumagetsi ane simba, zvikamu zveredhiyo (RF), masensa ema microelectromechanical systems (MEMS), uye maelectronics ane tembiricha yepamusoro. Kazhinji, mawafer eSiCOI anosanganisa hunhu hwepanyama hwesilicon carbide nemabhenefiti emagetsi ekuparadzanisa emuchina wekudzivirira, zvichipa hwaro hwakakodzera hwechizvarwa chinotevera chemidziyo ye semiconductor inoshanda zvakanyanya.

Kushandiswa kweSiCOI wafer

Zvishandiso zveMagetsi zveMagetsi

Maswichi ane simba guru uye maswichi ane simba guru, maMOSFET, uye madiode

Batsirwa neSiC's wide bandgap, high breakdown voltage, uye kugadzikana kwekupisa

Kuderedzwa kwesimba remagetsi uye kushanda zvakanaka muhurongwa hwekushandura simba

Zvikamu zveRadio Frequency (RF)

Matransistors nema amplifiers ane mafrequency akakwira

Kukwanisa kwakaderera kweparasitic nekuda kweinsulating layer kunowedzera mashandiro eRF

Yakakodzera kutaurirana kwe5G uye masisitimu eradar

Masisitimu eMicroelectromechanical (MEMS)

Masensa nema actuator anoshanda munzvimbo dzakaoma

Kusimba kwemuchina uye kusagadzikana kwemakemikari zvinowedzera hupenyu hwemuchina

Inosanganisira masensa ekumanikidza, accelerometers, uye gyroscopes

Zvigadzirwa zvemagetsi zvinopisa zvakanyanya

Magetsi ekushandisa mota, aerospace, uye maindasitiri

Shandisa zvakavimbika pakupisa kwakakwirira apo silicon inokundikana

Zvishandiso zvePhotonic

Kubatanidzwa nezvikamu zve optoelectronic pa insulator substrates

Inogonesa mafotoniki ari pa-chip nekutarisira kwakanaka kwekupisa

Mibvunzo neMhinduro zveSiCOI wafer

Mubvunzo:chii chinonzi SiCOI wafer

A:SiCOI wafer inomirira Silicon Carbide-on-Insulator wafer. Imhando ye semiconductor substrate apo chidimbu chakatetepa chesilicon carbide (SiC) chinosungirirwa pane chinodzivirira kupisa, kazhinji silicon dioxide (SiO₂) kana dzimwe nguva sapphire. Chimiro ichi chakafanana mukufunga nemawafer anozivikanwa eSilicon-on-Insulator (SOI) asi anoshandisa SiC panzvimbo pesilicon.