HPSI SiC wafer dia:3inch ukobvu:350um± 25 µm yeMagetsi Emagetsi

Tsanangudzo Pfupi:

Iyo HPSI (High-Purity Silicon Carbide) SiC wafer ine dhayamita ye3 inches uye ukobvu hwe350 µm ± 25 µm yakagadzirirwa zvakanangana nemagetsi emagetsi maapplication anoda epamusoro-performance substrates. Iyi SiC wafer inopa yepamusoro yekupisa yekupisa, yakakwira breakdown voltage, uye kushanda zvakanaka pakupisa kwakanyanya kwekushanda, zvichiita kuti ive sarudzo yakanaka yekukura kuri kudiwa kwesimba rinoshanda uye rakasimba remagetsi emagetsi. SiC wafers anonyanya kukodzera kune yakakwira-voltage, yakakwira-ikozvino, uye yakakwira-frequency application, uko yechinyakare silicon substrates inotadza kuzadzisa zvido zvekushanda.
Yedu HPSI SiC wafer, yakagadzirwa uchishandisa yazvino indasitiri-inotungamira tekinoroji, inowanikwa mumagiredhi akati wandei, imwe neimwe yakagadzirirwa kuzadzisa zvakatemwa zvekugadzira zvinodiwa. Iyo wafer inoratidza kurongeka kwakasarudzika, zvivakwa zvemagetsi, uye mhando yepamusoro, kuve nechokwadi chekuti inogona kuunza mashandiro akavimbika mumashandisirwo arikuda, anosanganisira magetsi semiconductors, mota dzemagetsi (EVs), masisitimu emagetsi anovandudzwa, uye shanduko yemagetsi emaindasitiri.

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Application

HPSI SiC wafers anoshandiswa mumhando dzakasiyana dzemagetsi emagetsi maapplication, kusanganisira:

Simba Semiconductors:SiC wafers anowanzo shandiswa mukugadzira magetsi diode, transistors (MOSFETs, IGBTs), uye thyristors. Aya semiconductors anoshandiswa zvakanyanya mukushandura magetsi mashandisirwo anoda kushanda nesimba uye kuvimbika, senge mumaindasitiri emota madhiraivha, magetsi emagetsi, uye inverters emagetsi emagetsi masisitimu.
Mota dzemagetsi (EVs):Mumagetsi emagetsi emotokari, SiC-yakavakirwa magetsi emagetsi inopa kukurumidza kushandura kumhanya, kukwirira kwesimba, uye kuderedzwa kwekurasikirwa kwemafuta. Zvikamu zveSiC zvakanakira maapplication mumabhatiri manejimendi masisitimu (BMS), kuchaja zvivakwa, uye pa-bhodhi majaja (OBCs), uko kudzikisa huremu uye kuwedzera simba rekushandura simba kwakakosha.

Renewable Energy Systems:SiC wafers ari kuwedzera kushandiswa mune solar inverters, mhepo turbine jenareta, uye simba rekuchengetedza masisitimu, uko kushanda kwakanyanya uye kusimba kwakakosha. SiC-based components inogonesa yakakwira simba density uye yakakwidziridzwa mashandiro mune izvi maapplication, inovandudza iyo yakazara simba rekushandura kushanda zvakanaka.

Industrial Power Electronics:Mukushanda kwepamusoro-soro kwekushanda kwemaindasitiri, senge madhiraivha emota, marobhoti, uye hukuru-hukuru hwemagetsi, kushandiswa kweSiC wafers kunobvumira kuvandudzwa kwekuita maererano nekushanda, kuvimbika, uye kutonga kwekupisa. SiC zvishandiso zvinogona kubata yakakwira switching frequency uye tembiricha yakakwira, ichiita kuti ive yakakodzera kune inoda nharaunda.

Telecommunications uye Data Centers:SiC inoshandiswa mumagetsi emidziyo yekufonera uye nzvimbo dzedata, uko kuvimbika kwepamusoro uye kushandurwa kwemagetsi kwakakosha kwakakosha. SiC-yakavakirwa magetsi maturusi anogonesa kugona kwepamusoro pamasikisi madiki, ayo anodudzira mukuderedzwa kwesimba rekushandisa uye zvirinani kutonhodza kushanda muhukuru-hukuru masisitimu.

Iyo yakakwira breakdown voltage, yakaderera pa-resistance, uye yakanakisa kupisa kwemafuta eSiC wafers anoaita iwo akakodzera substrate yeaya epamusoro maapplication, achigonesa kuvandudzwa kwechizvarwa chinotevera simba-rinoshanda magetsi emagetsi.

Properties

Property	Value
Wafer Diameter	3 inches (76.2 mm)
Wafer Ukobvu	350 µm ± 25 µm
Wafer Orientation	<0001> pa-axis ± 0.5°
Micropipe Density (MPD)	≤ 1cm⁻²
Electrical Resistivity	≥ 1E7 Ω·cm
Dopant	Undoped
Yekutanga Flat Oriental	{11-20} ± 5.0°
Primary Flat Length	32.5 mm ± 3.0 mm
Secondary Flat Length	18.0 mm ± 2.0 mm
Secondary Flat Orientation	Kutarisa kumusoro: 90 ° CW kubva kupuraimari flat ± 5.0 °
Kusabatanidzwa kumucheto	3 mm
LTV/TTV/Bow/Warp	3 µm / 10 µm / ±30 µm / 40 µm
Kukasharara Kwepamusoro	C-chiso: Yakapenya, Si-chiso: CMP
Cracks (yakaongororwa nechiedza chakasimba)	Hapana
Hex Plates (yakaongororwa nechiedza chakasimba)	Hapana
Polytype Nzvimbo (inoongororwa nechiedza chakanyanya)	Cumulative area 5%
Kukwenya (kuongororwa nechiedza chakanyanya)	≤ 5 scratches, cumulative kureba ≤ 150 mm
Edge Chipping	Hapana anotenderwa ≥ 0.5 mm hupamhi nekudzika
Surface Contamination (inoongororwa nechiedza chakanyanya)	Hapana

Key Benefits

High Thermal Conductivity:SiC wafers anozivikanwa nekugona kwawo kudzima kupisa, izvo zvinobvumira zvishandiso zvemagetsi kuti zvishande nepamusoro-soro uye kubata mamhepo epamusoro pasina kupisa. Ichi chimiro chakakosha mumagetsi emagetsi uko kutonga kwekupisa kuri dambudziko rakakura.
High Breakdown Voltage:Iyo yakakura bandgap yeSiC inogonesa michina kushivirira yakakwira voltage mazinga, ichiita kuti ive yakakodzera kune yakakwira-voltage maapplication akadai semagetsi grid, mota dzemagetsi, uye maindasitiri muchina.
Kunyatsogona:Iko kusanganiswa kwepamusoro-kuchinja ma frequency uye kuderera-ku-resistance kunoguma nemidziyo ine yakaderera simba kurasikirwa, kuvandudza kushanda kwese kwesimba rekushandura uye kuderedza kudiwa kweakaoma kutonhora masisitimu.
Kuvimbika Munzvimbo Dzakaoma:SiC inokwanisa kushanda patembiricha yepamusoro (kusvika 600°C), izvo zvinoita kuti ive yakakodzera kushandiswa munzvimbo dzingangokuvadza midziyo yechinyakare yesilicon-based.
Kuchengetedza Simba:SiC magetsi maturusi anovandudza simba rekushandura simba, izvo zvakakosha mukudzikisa mashandisirwo emagetsi, kunyanya mumasisitimu mahombe senge maindasitiri emagetsi anoshandura, mota dzemagetsi, uye kuvandudzwa kwesimba remagetsi.