HPSI SiC Wafer ≥90% Transmittance Optical Giredhi yeAI/AR Magirazi

Tsanangudzo Pfupi

Parameter	Giredhi	4-Inch Substrate	6-Inch Substrate
Diameter	Z Giredhi / D Giredhi	99.5 mm - 100.0 mm	149.5 mm - 150.0 mm
Poly-mhando	Z Giredhi / D Giredhi	4H	4H
Ukobvu	Z Grade	500 μm ± 15 μm	500 μm ± 15 μm
Ukobvu	D Giredhi	500 μm ± 25 μm	500 μm ± 25 μm
Wafer Orientation	Z Giredhi / D Giredhi	Paaxis: <0001> ± 0.5°	Paaxis: <0001> ± 0.5°
Micropipe Density	Z Grade	≤ 1cm²	≤ 1cm²
Micropipe Density	D Giredhi	≤ 15 cm²	≤ 15 cm²
Resistivity	Z Grade	≥ 1E10 Ω·cm	≥ 1E10 Ω·cm
Resistivity	D Giredhi	≥ 1E5 Ω·cm	≥ 1E5 Ω·cm

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Features

Core Nhanganyaya: Basa reHPSI SiC Wafers muAI/AR Magirazi

HPSI (High-Purity Semi-Insulating) Silicon Carbide wafers mawafer ane hunyanzvi anoratidzwa nehupamhi hwekudzivirira (>10⁹ Ω·cm) uye yakanyanya kuderera density. MuAI / AR magirazi, ivo vanonyanya kushanda seyakakosha substrate zvinhu zve diffractive optical waveguide lenses, kugadzirisa mabhodhoro ane hukama neachinyakare optical zvinhu maererano nehutete-uye-mwenje fomu zvinhu, kupisa kupisa, uye kuita kwemaziso. Semuyenzaniso, magirazi eAR anoshandisa SiC waveguide lenzi anogona kuwana iyo yekupedzisira-yakafara nzvimbo yekuona (FOV) ye70 ° -80 °, ichidzikisa ukobvu hweimwe lenzi layer kusvika 0.55mm chete uye huremu kungosvika 2.7g, zvakanyanya kusimudzira kupfeka kunyaradza uye kunyudzwa kwekuona.

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Hunhu Hunokosha: Sei SiC Material Inopa Simba AI/AR Magirazi Dhizaini

Yakakwira Refractive Index uye Optical Performance Optimization

SiC's refractive index (2.6-2.7) inoda kusvika 50% yakakwirira kupfuura yegirazi yechinyakare (1.8-2.0). Izvi zvinobvumira kutetepa uye kunyatsoita waveguide zvimiro, zvakanyanya kuwedzera iyo FOV. Iyo yakakwira refractive index inobatsirawo kudzvanya "muraraungu mhedzisiro" yakajairika mune diffractive waveguides, kuvandudza kuchena kwemufananidzo.

Exceptional Thermal Management Kugona

Iine thermal conductivity yakakwira se490 W/m·K (padhuze neicho chemhangura), SiC inokwanisa kukurumidza kubvisa kupisa kunogadzirwa neMicro-LED kuratidza modules. Izvi zvinodzivirira kuderedzwa kwekuita kana kuchembera kwechigadzirwa nekuda kwekupisa kwakanyanya, kuve nechokwadi chehupenyu hurefu hwebhatiri uye kugadzikana kwepamusoro.

Mechanical Simba uye Durability

SiC ine kuomarara kweMohs ye9.5 (yechipiri chete kudhaimondi), inopa kusarudzika kukwenya kuramba, zvichiita kuti ive yakanaka kune anowanzo shandiswa magirazi evatengi. Hushasha hwayo hwepamusoro hunogona kudzorwa kuRa <0.5 nm, kuve nechokwadi chekurasikirwa-kurasikirwa uye yakanyanya kufanana kufambisa kwechiedza mumawaveguides.

Electrical Property Compatibility

HPSI SiC's resistivity (>10⁹ Ω·cm) inobatsira kudzivirira kukanganiswa kwechiratidzo. Iyo inogona zvakare kushanda seyakakwana simba mudziyo mudziyo, optimize simba manejimendi modules mumagirazi AR.

Primary Application Directions

Core Optical Zvikamu zveAI/AR Girazis

Diffractive Waveguide Lenses: SiC substrates inoshandiswa kugadzira ekupedzisira-mutete optical waveguides anotsigira hombe FOV uye kubviswa kwemuraraungu mhedzisiro.
Window Plates uye Prisms:Kuburikidza nekucheka kwakasarudzika uye kukwenenzverwa, SiC inogona kugadziriswa kuita mahwindo ekudzivirira kana maprism optical emagirazi eAR, inosimudzira mwenje wekufambisa uye kupfeka kuramba.

Zvikumbiro Zvakawedzerwa Mune Dzimwe Nzvimbo

Power Electronics: Inoshandiswa mune yakakwira-frequency, yakakwirira-simba mamiriro senge nyowani magetsi emagetsi inverters uye maindasitiri emagetsi ekudzora.
Quantum Optics: Inoita semugadziri wenzvimbo dzemavara, anoshandiswa mumasubstrates ehuwandu hwekutaura uye maturusi ekunzwa.

4 Inch & 6 Inch HPSI SiC Substrate Kutsanangurwa Kuenzanisa

Parameter	Giredhi	4-Inch Substrate	6-Inch Substrate
Diameter	Z Giredhi / D Giredhi	99.5 mm - 100.0 mm	149.5 mm - 150.0 mm
Poly-mhando	Z Giredhi / D Giredhi	4H	4H
Ukobvu	Z Grade	500 μm ± 15 μm	500 μm ± 15 μm
Ukobvu	D Giredhi	500 μm ± 25 μm	500 μm ± 25 μm
Wafer Orientation	Z Giredhi / D Giredhi	Paaxis: <0001> ± 0.5°	Paaxis: <0001> ± 0.5°
Micropipe Density	Z Grade	≤ 1cm²	≤ 1cm²
Micropipe Density	D Giredhi	≤ 15 cm²	≤ 15 cm²
Resistivity	Z Grade	≥ 1E10 Ω·cm	≥ 1E10 Ω·cm
Resistivity	D Giredhi	≥ 1E5 Ω·cm	≥ 1E5 Ω·cm
Yekutanga Flat Oriental	Z Giredhi / D Giredhi	(10-10) ± 5.0°	(10-10) ± 5.0°
Yekutanga Flat Length	Z Giredhi / D Giredhi	32.5 mm ± 2.0 mm	Notch
Yechipiri Flat Length	Z Giredhi / D Giredhi	18.0 mm ± 2.0 mm	-
Edge Exclusion	Z Giredhi / D Giredhi	3 mm	3 mm
LTV / TTV / Bow / Warp	Z Grade	≤ 2.5 μm / ≤ 5 μm / ≤ 15 μm / ≤ 30 μm	≤ 2.5 μm / ≤ 6 μm / ≤ 25 μm / ≤ 35 μm
LTV / TTV / Bow / Warp	D Giredhi	≤ 10 μm / ≤ 15 μm / ≤ 25 μm / ≤ 40 μm	≤ 5 μm / ≤ 15 μm / ≤ 40 μm / ≤ 80 μm
Hukasha	Z Grade	Polish Ra ≤ 1 nm / CMP Ra ≤ 0.2 nm	Polish Ra ≤ 1 nm / CMP Ra ≤ 0.2 nm
Hukasha	D Giredhi	Polish Ra ≤ 1 nm / CMP Ra ≤ 0.2 nm	Polish Ra ≤ 1 nm / CMP Ra ≤ 0.5 nm
Edge Cracks	D Giredhi	Cumulative area ≤ 0.1%	Cumulative kureba ≤ 20 mm, imwe chete ≤ 2 mm
Polytype Nzvimbo	D Giredhi	Cumulative area ≤ 0.3%	Yakawedzerwa nzvimbo ≤ 3%
Visual Carbon Inclusions	Z Grade	Cumulative area ≤ 0.05%	Cumulative area ≤ 0.05%
Visual Carbon Inclusions	D Giredhi	Cumulative area ≤ 0.3%	Yakawedzerwa nzvimbo ≤ 3%
Silicon Surface Scratches	D Giredhi	5 inotenderwa, imwe neimwe ≤1mm	Hurefu hwekuwedzera ≤ 1 x dhayamita
Edge Chips	Z Grade	Hapana anotenderwa (kufara nekudzika ≥0.2mm)	Hapana anotenderwa (kufara nekudzika ≥0.2mm)
Edge Chips	D Giredhi	7 inotenderwa, imwe neimwe ≤1mm	7 inotenderwa, imwe neimwe ≤1mm
Threading Screw Dislocation	Z Grade	-	≤ 500 cm²
Packaging	Z Giredhi / D Giredhi	Multi-wafer Cassette Kana Single Wafer Container	Multi-wafer Cassette Kana Single Wafer Container

XKH Services: Yakabatanidzwa Kugadzira uye Kugadzirisa Mano

XKH kambani ine yakatwasuka yekubatanidza hunyanzvi kubva kune yakabikwa kusvika kune yakapedzwa wafers, inovhara iyo yese cheni yeSiC substrate kukura, kucheka, kupukuta, uye tsika kugadzirisa. Zvakanakira sevhisi zvinosanganisira:

Material Diversity:Tinogona kupa akasiyana wafer mhando se4H-N mhando, 4H-HPSI mhando, 4H/6H-P mhando, uye 3C-N mhando. Resistivity, ukobvu, uye kutaridzika kunogona kugadziridzwa zvinoenderana nezvinodiwa.
.Flexible Size Customization:Isu tinotsigira kugadzira wafer kubva pa2-inch kusvika 12-inch madhayamita, uye tinokwanisa zvakare kugadzira akakosha masikweya mapande (semuenzaniso, 5x5mm, 10x10mm) nemaprism asina kujairika.
Optical-Giredhi Precision Control:Wafer Total Thickness Variation (TTV) inogona kuchengetedzwa pa <1μm, uye kushata kwepamusoro paRa <0.3 nm, ichisangana nenano-level flatness zvinodiwa zve waveguide zvishandiso.
Rapid Market Response:Iyo yakabatanidzwa bhizinesi modhi inogonesa shanduko inobudirira kubva kuR&D kuenda kune yakawanda kugadzirwa, ichitsigira zvese kubva kudiki-batch verification kuenda kune yakakura-vhoriyamu kutumira (yekutungamira nguva kazhinji 15-40 mazuva).

FAQ yeHPSI SiC Wafer

Q1: Nei HPSI SiC ichionekwa sechinhu chakanakira AR waveguide lenzi?
A1: Yayo yakakwirira refractive index (2.6-2.7) inogonesa yakaonda, inoshanda zvakanyanya waveguide zvimiro zvinotsigira nzvimbo yakakura yekuona (semuenzaniso, 70 ° -80 °) uchibvisa "muraraungu mhedzisiro".
Q2: Ko HPSI SiC inovandudza sei kutonga kwekupisa mumagirazi eAI/AR?
A2: Iine thermal conductivity inosvika 490 W/m·K (padhuze nemhangura), inonyatso bvisa kupisa kubva kuzvinhu zvakaita seMicro-LEDs, kuve nechokwadi chekuita kwakagadzikana uye hupenyu hurefu hwechishandiso.
Q3: Ndeapi mabhenefiti ekugara anopihwa neHPSI SiC yemagirazi anopfekeka?
A3: Kuomarara kwayo kunoshamisa (Mohs 9.5) inopa hukuru hwekukwenya kuramba, ichiita kuti igare yakasimba pakushandiswa kwezuva nezuva mumagirazi egiredhi eAR.