GaN-on-Diamond Wafers 4inch 6inch Total epi ukobvu (micron) 0.6 ~ 2.5 kana yakagadzirirwa High-Frequency Applications

Tsanangudzo Pfupi:

GaN-on-Diamond wafers ndeye advanced material solution yakagadzirirwa high-frequency, high-power, uye high-effective applications, kubatanidza zvinoshamisa zvivakwa zveGallium Nitride (GaN) neakasarudzika ekupisa kweDiamondi. Aya mawafer anowanikwa mune ese 4-inch uye 6-inch madhayamita, ane customizable epi layer makobvu kubva pa0.6 kusvika 2.5 microns. Musanganiswa uyu unopa kupisa kwepamusoro kupisa, kubata-simba kwepamusoro, uye kuita kwakanakisa kwepamusoro-frequency kuita, kuchiita kuti ive yakanakira zvikumbiro zvakaita seRF magetsi amplifiers, radar, microwave yekutaurirana masisitimu, uye zvimwe zvemagetsi zvinonyanya kuita.


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Properties

Wafer size:
Inowanikwa mu 4-inch uye 6-inch madhayamita ekubatanidzwa kwakasiyana-siyana mune akasiyana semiconductor kugadzira maitiro.
Customization sarudzo dziripo yewafer saizi, zvichienderana nezvinodiwa nemutengi.

Epitaxial Layer Ukobvu:
Range: 0.6 µm kusvika 2.5 µm, ine sarudzo dzeukobvu hwakajairwa zvichienderana nezvinodiwa zvekushandisa.
Iyo epitaxial layer yakagadzirirwa kuve nechokwadi chepamusoro-mhando yeGaN crystal kukura, ine yakakwenenzverwa ukobvu kuenzanisa simba, frequency mhinduro, uye yekupisa manejimendi.

Thermal Conductivity:
Dhaimondi rinopa yakanyanyisa kupisa conductivity inosvika 2000-2200 W/m·K, kuve nechokwadi chekubvisa kupisa kwakanaka kubva kune-high-power zvishandiso.

GaN Material Properties:
Wide Bandgap: Iyo GaN layer inobatsira kubva kune yakakura bandgap (~ 3.4 eV), iyo inobvumira kushanda munzvimbo dzakaoma, high voltage, uye yakakwirira-tembiricha mamiriro.
Electron Mobility: High electron mobility (approx. 2000 cm²/V·s), zvichiita kuti pave nekukasira kuchinjika uye ma frequency epamusoro ekushanda.
High Breakdown Voltage: GaN's breakdown voltage yakakwira zvakanyanya kupfuura yakajairwa semiconductor zvinhu, zvichiita kuti ive yakakodzera kune-simba-yakawanda maapplication.

Kuita Kwemagetsi:
Yakakwira Simba Density: GaN-on-Diamond wafers inogonesa yakakwira simba kubuda uku ichichengetedza diki fomu chinhu, chakanakira magetsi amplifiers uye RF masisitimu.
Kurasikirwa Kwakaderera: Iko kusanganiswa kweGaN nekupisa kupisa kwedhaimani kunotungamira mukurasikirwa kwemagetsi panguva yekushanda.

Surface Quality:
Yepamusoro-Hunhu Epitaxial Kukura: Iyo GaN layer inokura epitaxially padhaimani substrate, kuve nechokwadi kushoma dislocation density, yakakwirira crystalline mhando, uye optimal mudziyo kuita.

Uniformity:
Ukobvu uye Kuumbwa Kufanana: Ose ari maviri GaN layer uye dhaimani substrate inochengetedza yakanakisa kufanana, yakakosha pakuenderana kuita kwechishandiso uye kuvimbika.

Kugadzikana Kwemakemikari:
Ose ari maviri GaN nedhaimani zvinopa kugadzikana kwekemikari kwakasiyana, zvichibvumira aya mawafer kuita akavimbika munzvimbo dzakaoma dzemakemikari.

Applications

RF Power Amplifiers:
GaN-on-Diamond wafers akanakira RF magetsi amplifiers munharembozha, radar masisitimu, uye setiraiti kutaurirana, ichipa zvese zviri zviviri kunyatsoshanda uye kuvimbika pama frequency akakwira (semuenzaniso, 2 GHz kusvika 20 GHz uye kupfuura).

Microwave Communication:
Aya mawafer anokunda mune microwave yekutaurirana masisitimu, uko yakakwira simba kubuda uye kushomeka kwechiratidzo kuderera kwakakosha.

Radar uye Sensing Technologies:
GaN-on-Diamond wafers anoshandiswa zvakanyanya mu radar masisitimu, achipa kushanda kwakasimba mune yakakwirira-frequency uye yakakwirira-simba maapplication, kunyanya mumauto, emotokari, uye aerospace sector.

Satellite Systems:
Mune setiraiti yekutaurirana masisitimu, aya mawafer anovimbisa kusimba uye kushanda kwakanyanya kwemagetsi amplifiers, anokwanisa kushanda mumamiriro ekunze akanyanya.

High-Power Electronics:
Kugona kwekudziya kwekugona kweGaN-on-Diamond kunoita kuti ive yakakodzera kumagetsi emagetsi epamusoro, senge ma converter emagetsi, inverters, uye solid-state relays.

Thermal Management Systems:
Nekuda kwekukwirira kwekupisa kwedhaimondi, mawafer aya anogona kushandiswa mumashandisirwo anoda kusimba kwekupisa kwekutonga, senge yakakwirira-simba LED uye laser masisitimu.

Q&A yeGaN-on-Diamond Wafers

Q1: Chii chakanakira kushandisa GaN-on-Diamond wafers mune yakakwirira-frequency application?

A1:GaN-on-Diamond wafers anosanganisa iyo yakakwira erekitironi kufamba uye yakakura bandgap yeGaN ine yakasarudzika yekupisa kwedhaimondi. Izvi zvinogonesa midziyo yemhando yepamusoro-soro kuti ishande pamazinga emagetsi epamusoro uku ichinyatso kutonga kupisa, kuve nechokwadi chekushanda kwakanyanya uye kuvimbika zvichienzaniswa nemidziyo yechinyakare.

Q2: Ko GaN-on-Diamond wafers inogona kugadzirwa kune chaiyo simba uye frequency zvinodiwa?

A2:Hongu, GaN-on-Diamond wafers anopa zvinogoneka sarudzo, zvinosanganisira epitaxial layer ukobvu (0.6 µm kusvika 2.5 µm), saizi yewafer (4-inch, 6-inch), uye mamwe ma paramita anoenderana nezvinodiwa zvekushandisa, achipa kuchinjika kwepamusoro-simba uye yakakwirira-frequency application.

Q3: Ndeapi mabhenefiti akakosha edhaimondi se substrate yeGaN?

A3:Kupisa kwedhaimondi kwakanyanyisa (kusvika 2200 W/m·K) kunobatsira kubvisa kupisa kunogadzirwa nemagetsi eGaN ane simba guru. Uku kugona kwekutonga kwemafuta kunobvumira GaN-on-Diamond zvishandiso kuti zvishande pamwero wemagetsi epamusoro uye ma frequency, kuve nechokwadi chekuvandudzwa kwechishandiso uye hupenyu hurefu.

Q4: Ko GaN-on-Diamond wafers akakodzera nzvimbo kana aerospace application?

A4:Hongu, GaN-on-Diamond wafers akanyatsokodzera nzvimbo uye aerospace application nekuda kwekuvimbika kwavo kwepamusoro, kugona kwekutonga kwemafuta, uye kuita mumamiriro akanyanya, akadai semwaranzi yakakwirira, kusiyanisa kwekushisa, uye kushanda kwepamusoro-frequency.

Q5: Ndeipi inotarisirwa hupenyu hwemidziyo yakagadzirwa kubva kuGaN-on-Diamond wafers?

A5:Iko kusanganiswa kweGaN yekugara yakasimba uye yedhaimani yakasarudzika yekupisa kupisa zvivakwa zvinoguma nehupenyu hurefu hwezvishandiso. GaN-on-Diamond zvishandiso zvakagadzirirwa kushanda munzvimbo dzakaoma uye nepamusoro-simba mamiriro ane kuderera kudiki nekufamba kwenguva.

Q6: Ko kupisa kwedhaimani kunokanganisa sei kuita kwese kweGaN-on-Diamond wafers?

A6:Kupisa kwekupisa kwedhaimondi kunoita basa rakakosha mukusimudzira mashandiro eGaN-on-Diamond wafers nekubvisa zvakanaka kupisa kunogadzirwa mukushandiswa kwesimba repamusoro. Izvi zvinovimbisa kuti michina yeGaN inochengetedza kushanda kwakakwana, kuderedza kushushikana kwekushisa, uye kudzivisa kupisa, izvo zvinowanzoitika mumagetsi emagetsi e semiconductor.

Q7: Ndeapi akajairika maapplication uko GaN-on-Diamond wafers anopfuura mamwe semiconductor zvinhu?

A7:GaN-on-Diamond wafers anokunda zvimwe zvinhu mumaapplication anoda mabatiro emagetsi epamusoro, kushanda kwepamusoro-frequency, uye kutonga kwakanaka kwekupisa. Izvi zvinosanganisira RF magetsi amplifiers, radar masisitimu, microwave kutaurirana, setiraiti kutaurirana, uye mamwe emagetsi emagetsi.

Mhedziso

GaN-on-Diamond wafers inopa yakasarudzika mhinduro yeakakwira-frequency uye yakakwirira-simba maapplication, achibatanidza kuita kwepamusoro kweGaN neakasarudzika ekupisa zvimiro zvedhaimondi. Nezvimiro zvinogoneka, zvakagadzirirwa kuzadzisa zvinodikanwa zvemaindasitiri anoda kushanda nesimba kwesimba, kutonga kwekupisa, uye kushanda kwepamusoro-frequency, kuve nechokwadi chekuvimbika uye hupenyu hurefu munzvimbo dzakaoma.

Detailed Diagram

GaN paDiamond01
GaN paDiamond02
GaN paDiamond03
GaN paDiamond04

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