Gallium Nitride paSilicon wafer 4inch 6inch Yakagadzirirwa Si Substrate Oriental, Resistivity, uye N-mhando/P-mhando Sarudzo
Features
●Wide Bandgap:GaN (3.4 eV) inopa kuvandudzwa kwakakura mukuita kwepamusoro-frequency, yakakwirira-simba, uye yakakwirira-tembiricha kuita zvichienzaniswa nesilicon yechinyakare, zvichiita kuti ive yakakodzera kune magetsi emagetsi uye RF amplifiers.
●Customizable Si Substrate Oriental:Sarudza kubva kwakasiyana Si substrate orientation senge <111>, <100>, uye nezvimwe kuti uenderane nezvinodiwa zvechishandiso.
●Customized Resistivity:Sarudza pakati peakasiyana resistivity sarudzo dzeSi, kubva kuhafu-inodzivirira kusvika kune yakakwirira-resistivity uye yakaderera-resistivity kukwirisa mashandiro echishandiso.
● Doping Type:Inowanikwa muN-mhando kana P-mhando doping kuti ienderane nezvinodiwa zvemagetsi zvishandiso, RF transistors, kana maLED.
● High Breakdown Voltage:GaN-on-Si wafers ane high breakdown voltage (kusvika 1200V), achivabvumira kubata high-voltage applications.
●Kukurumidza Kuchinja Kumhanya:GaN ine yakakwira erekitironi kufamba uye yakadzikira inochinja kurasikirwa pane silicon, ichiita GaN-on-Si wafers akanakira maseketi ekumhanya.
●Enhanced Thermal Performance:Zvisinei nekudzikira kwekupisa kwesilicon, GaN-on-Si ichiri kupa kugadzikana kwekupisa kwepamusoro, nekupisa kuri nani kupisa pane zvechinyakare silicon zvishandiso.
Zvinotaurwa Nezvehunyanzvi
| Parameter | Value |
| Wafer Size | 4-inch, 6-inch |
| Si Substrate Oriental | <111>, <100>, tsika |
| Si Resistivity | High-resistivity, Semi-insulating, Low-resistivity |
| Doping Type | N-mhando, P-mhando |
| GaN Layer Ukobvu | 100 nm - 5000 nm (customizable) |
| AlGaN Barrier Layer | 24% - 28% Al (yakajairika 10-20 nm) |
| Kuputsa Voltage | 600V - 1200V |
| Electron Mobility | 2000 cm²/V·s |
| Kuchinja Frequency | Kusvika ku18 GHz |
| Wafer Surface roughness | RMS ~0.25 nm (AFM) |
| GaN Sheet Resistance | 437.9 Ω·cm² |
| Total Wafer Warp | <25 µm (yakanyanya) |
| Thermal Conductivity | 1.3 – 2.1 W/cm·K |
Applications
Power Electronics: GaN-on-Si yakanakira magetsi emagetsi akadai semagetsi amplifiers, converters, uye inverters anoshandiswa mune renewable simba masisitimu, mota dzemagetsi (EVs), uye zvigadzirwa zvemaindasitiri. Yayo yakakwira breakdown voltage uye yakaderera pa-resistance inogonesa shanduko yesimba inoshanda, kunyangwe mune yakakwirira-simba maapplication.
RF uye Microwave Communications: GaN-on-Si wafers inopa yakakwirira-frequency kugona, ichiita kuti ive yakakwana kune RF magetsi amplifiers, satellite kutaurirana, radar masisitimu, uye 5G tekinoroji. Nekumhanyisa kwekuchinja kwepamusoro uye kugona kushanda kune yakakwirira frequency (kusvika18 GHz), GaN zvishandiso zvinopa hukuru hwekuita mumashandisirwo aya.
Automotive Electronics: GaN-on-Si inoshandiswa mumagetsi emagetsi emagetsi, kusanganisirapa-board charger (OBCs)uyeDC-DC converters. Kugona kwayo kushanda patembiricha yakakwira uye kumirisana nemazinga emagetsi epamusoro anoita kuti ive yakakodzera kufambiswa kwemotokari yemagetsi inoda kushandurwa kwesimba rakasimba.
LED uye Optoelectronics: GaN ndicho chinhu chekusarudza blue and white LEDs. GaN-on-Si wafers anoshandiswa kugadzira yakakwirira-inoshanda ma LED ekuvhenekesa masisitimu, achipa kuita kwakanakisa mukuvhenekesa, kuratidza matekinoroji, uye optical kutaurirana.
Q&A
Q1: Chii chakanakira GaN pamusoro pesilicon mumidziyo yemagetsi?
A1:GaN ine ayakakura bandgap (3.4 eV)kupfuura silicon (1.1 eV), iyo inobvumira kuti ikwanise kutsungirira yakakwirira voltages uye tembiricha. Ichi chivakwa chinogonesa GaN kubata yakakwirira-simba maapplication zvakanyanya, kuderedza kurasikirwa kwemagetsi uye kuwedzera system performance. GaN inopawo kukurumidza kushandura kumhanya, izvo zvakakosha kune yakakwirira-frequency zvishandiso seRF amplifiers uye magetsi anoshandura.
Q2: Ndinogona here kugadzirisa iyo Si substrate kutaridzika kwekushandisa kwangu?
A2:Hongu, tinopacustomizable Si substrate orientationszvakaita se<111>, <100>, uye mamwe maitiro zvinoenderana nezvinodiwa zvemudziyo wako. Iyo yekumisikidzwa kweSi substrate inoita basa rakakosha mukuita kwechishandiso, kusanganisira maitiro emagetsi, maitiro ekupisa, uye kugadzikana kwemuchina.
Q3: Ndeapi mabhenefiti ekushandisa GaN-on-Si wafers kune yakakwirira-frequency application?
A3:GaN-on-Si wafers inopa yepamusorokushandura kumhanya, zvichiita kuti kukurumidza kushanda kune yakakwirira frequencies kana ichienzaniswa nesilicon. Izvi zvinovaita vakanakaRFuyemicrowavemaapplication, pamwe nepamusoro-frequencymidziyo yemagetsizvakaita seHEMTs(High Electron Mobility Transistors) uyeRF amplifiers. GaN's high electron mobility inogumawo nekuderera kwekuchinja kurasikirwa uye nekuvandudza kushanda zvakanaka.
Q4: Ndezvipi zvingasarudzwa zvedoping zviripo zveGaN-on-Si wafers?
A4:Tinopa zvoseN-mhandouyeP-mhandodoping sarudzo, iyo inowanzoshandiswa kumhando dzakasiyana dzemichina semiconductor.N-mhando dopingyakanakirasimba transistorsuyeRF amplifiers, apoP-mhando dopinginowanzoshandiswa kune optoelectronic zvishandiso se LEDs.
Mhedziso
Yedu Yakagadzirirwa Gallium Nitride paSilicon (GaN-on-Si) Wafers inopa mhinduro yakanaka kune yakakwirira-frequency, yakakwirira-simba, uye yakanyanya-tembiricha maapplication. Iine customizable Si substrate orientation, resistivity, uye N-type/P-type doping, aya mawafesi akarongedzerwa kusangana nezvinodiwa chaizvo zvemaindasitiri kubva kumagetsi emagetsi uye masisitimu emotokari kusvika kuRF kutaurirana uye tekinoroji dzeLED. Kushandisa hukuru hwezvivakwa zveGaN uye scalability yesilicon, aya mawafesi anopa kukwidziridzwa kuita, kushanda nesimba, uye neremangwana-chiratidzo chezvinotevera-chizvarwa zvishandiso.
Detailed Diagram
