Gallium Nitride paSilicon wafer 4inch 6inch Yakagadzirirwa Si Substrate Orientation, Resistivity, uye N-type/P-type Sarudzo

Tsananguro pfupi:

MaWafer edu eGallium Nitride paSilicon (GaN-on-Si) Akagadzirwa kuti akwanise kusangana nezvinodiwa zviri kuwedzera zvemaapplication emagetsi ane simba guru uye ane frequency. Anowanikwa muhukuru hwemawafer e4-inch ne6-inch, mawafer aya anopa sarudzo dzekugadzirisa mashandisirwo eSi substrate, resistivity, uye doping type (N-type/P-type) kuti aenderane nezvinodiwa zvekushandisa. Tekinoroji yeGaN-on-Si inosanganisa zvakanakira gallium nitride (GaN) nesilicon (Si) substrate inodhura zvishoma, zvichiita kuti pave nekutonga kuri nani kwekupisa, kushanda zvakanaka, uye kumhanya kwekuchinja nekukurumidza. Nekushaikwa kwayo kwebandgap uye kuramba kwemagetsi kwakaderera, mawafer aya akakodzera kushandurwa kwesimba, maRF application, uye masisitimu ekutumira data nekukurumidza.

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Zvinhu zvirimo

●Bandgap Yakafara:GaN (3.4 eV) inopa kuvandudzwa kukuru mukushanda kwemafrequency akakwira, simba rakawanda, uye tembiricha yepamusoro zvichienzaniswa nesilicon yechinyakare, zvichiita kuti ive yakakodzera michina yemagetsi nemaRF amplifiers.
●Kurongeka kweSubstrate yeSi Yakagadzirirwa:Sarudza kubva pamatanho akasiyana eSi substrate akadai se<111>, <100>, nezvimwe zvinoenderana nezvinodiwa zvemudziyo.
●Kudzivirira Kwakagadzirwa Nesimba:Sarudza pakati pesarudzo dzakasiyana dzeSi, kubva pakudzivirira kupisa kusvika pakudzivirira kupisa zvakanyanya uye kudzivirira kupisa kuti ugone kushandisa mudziyo zvakanaka.
●Rudzi rwekushandisa zvinodhaka:Inowanikwa mumhando yeN-type kana P-type doping kuti ienderane nezvinodiwa nemidziyo yemagetsi, maRF transistors, kana maLED.
●Kuparara Kwakanyanya Kwemagetsi:Mawafer eGaN-on-Si ane voltage yakakwira (inosvika 1200V), zvichivabvumira kubata mashandisirwo emagetsi ane voltage yakakwira.
●Kumhanya Kwekuchinja Nekukurumidza:GaN ine kufamba kwemaerekitironi kwakawanda uye kurasikirwa nekuchinjana kwakaderera pane silicon, zvichiita kuti mawafer eGaN-on-Si ave akakodzera macircuit ekumhanya kwepamusoro.
●Kushanda Kwakavandudzwa Kwekupisa:Kunyangwe silicon ichikwanisa kudzikamisa kupisa, GaN-on-Si ichiri kupa kugadzikana kwakanyanya kwekupisa, uye kupisa kuri nani kupfuura zvishandiso zvechinyakare zvesilicon.

Magadzirirwo ehunyanzvi

Paramita	Kukosha
Saizi yeWafer	4-inch, 6-inch
Kudzidziswa kweSubstrate	<111>, <100>, gadzirisa
Kana Kuramba	Kudzivirira zvakanyanya, Kudzivirira zvishoma, Kudzivirira zvishoma
Rudzi rweDoping	N-rudzi, P-rudzi
Ukobvu hweGaN Layer	100 nm – 5000 nm (inogadziriswa)
Chidziviriro cheAlGaN	24% – 28% Al (kazhinji 10-20 nm)
Kuparara kweVoltage	600V – 1200V
Kufamba kweElectron	2000 cm²/V·s
Kuchinja Kakawanda	Kusvika ku18 GHz
Kuomarara kweWafer pamusoro	RMS ~0.25 nm (AFM)
Kuramba kweGaN Sheet	437.9 Ω·cm²
Wafer Warp Yese	< 25 µm (yakanyanya)
Kufambisa kwekupisa	1.3 – 2.1 W/cm·K

Mashandisirwo

Magetsi Emagetsi: GaN-on-Si yakanakira magetsi emagetsi akadai sema amplifiers emagetsi, ma converters, uye ma inverters anoshandiswa mumasystem emagetsi anodzokororwa, mota dzemagetsi (EVs), uye michina yeindasitiri. Voltage yayo yakanyanya kupwanyika uye kusadzivirira kwakaderera kunoita kuti magetsi ashandurwe zvakanaka, kunyangwe mukushandiswa kwemagetsi akawanda.

RF uye Microwave Communications: Mawafer eGaN-on-Si ane kugona kwefrequency yepamusoro, zvichiita kuti akwane maRF power amplifiers, satellite communications, radar systems, uye 5G technologies. Ane switching speeds yakakwira uye kugona kushanda pamafrequency akakwira (kusvika ku18 GHz), Midziyo yeGaN inopa mashandiro akanaka kwazvo mumapurogiramu aya.

Zvemagetsi zveMotokari: GaN-on-Si inoshandiswa mumagetsi emotokari, kusanganisiramachaja ari mubhodhi (OBCs)uyeVashanduri veDC-DCKukwanisa kwayo kushanda pakupisa kwakanyanya uye kutsungirira magetsi akawandisa kunoita kuti ikwane zvakanaka pakushandisa mota dzemagetsi dzinoda kushandurwa kwakasimba kwemagetsi.

LED uye Optoelectronics: GaN ndiyo chinhu chinosarudzwa ma LED ebhuruu nemachenaMawafer eGaN-on-Si anoshandiswa kugadzira masisitimu emwenje ye LED anoshanda zvakanyanya, zvichipa mashandiro akanaka mumwenje, matekinoroji ekuratidza, uye kutaurirana kwemaziso.

Mibvunzo neMhinduro

Mubvunzo 1: Ndeipi mukana weGaN pane silicon mumidziyo yemagetsi?

A1:GaN inegap yakafara (3.4 eV)kupfuura silicon (1.1 eV), iyo inoibvumira kutsungirira voltages netembiricha yakakwira. Hunhu uhwu hunogonesa GaN kubata mashandisirwo esimba rakawanda zvinobudirira, zvichideredza kurasikirwa kwesimba uye kuwedzera mashandiro esystem. GaN inopawo kumhanya kwekuchinja nekukurumidza, izvo zvakakosha kune zvishandiso zvine frequency yakakwira senge RF amplifiers uye power converters.

Mubvunzo wechipiri: Ndingagadzirisa here marongerwo eSi substrate kuti ndishandise?

A2:Ehe, tinopanzira dzeSi substrate dzinogadziriswazvakaita se<111>, <100>, uye mamwe marongero zvichienderana nezvinodiwa nemudziyo wako. Marongero eSi substrate anoita basa guru mukushanda kwemudziyo, kusanganisira hunhu hwemagetsi, maitiro ekupisa, uye kugadzikana kwemuchina.

Mubvunzo wechitatu: Ndezvipi zvakanakira kushandisa mawafer eGaN-on-Si pakushandisa mawafers akawanda?

A3:Mawafer eGaN-on-Si anopa zvakanakisisakumhanya kwekuchinja, zvichiita kuti zvikwanise kushanda nekukurumidza pamafrequencies akakwirira zvichienzaniswa nesilicon. Izvi zvinoita kuti zvive zvakanaka kuneRFuyemicrowavemashandisirwo, pamwe chete ne-high-frequencymidziyo yemagetsizvakaita seHEMTs(High Electron Mobility Transistors) uyeMa amplifiers eRFKufamba kwemaerekitironi kwakawanda kweGaN kunoitawo kuti pave nekurasikirwa kushoma kwekuchinjana uye kushanda zvakanaka kuri nani.

Mubvunzo wechina: Ndedzipi sarudzo dzekushandisa zvinodhaka dziripo dzeGaN-on-Si wafers?

A4:Tinopa zveseN-rudziuyeRudzi rwePsarudzo dzekushandisa zvinodhaka, idzo dzinowanzo shandiswa pamhando dzakasiyana dzemidziyo ye semiconductor.Kudhakwa kwemhando yeNyakanakirama transistors emagetsiuyeMa amplifiers eRF, panguva iyoKudhakwa kwemhando yePinowanzoshandiswa pamidziyo yemagetsi yakaita sema LED.

Mhedziso

MaWafer edu eGallium Nitride paSilicon (GaN-on-Si) Akagadzirwa Nemaoko anopa mhinduro yakanaka yekushandisa mashandisirwo emhando yepamusoro, simba guru, uye tembiricha yepamusoro. Nekushandisa nzira dzeSi substrate dzinogadziriswa, resistivity, uye N-type/P-type doping, mawafer aya akagadzirirwa kusangana nezvinodiwa nemaindasitiri kubva kumagetsi emagetsi uye masisitimu emotokari kusvika kuRF communication uye LED technologies. Vachishandisa hunhu hwepamusoro hweGaN uye kugona kukura kwesilicon, mawafer aya anopa kushanda kwakawedzerwa, kushanda zvakanaka, uye kudzivirira mune ramangwana kune zvishandiso zvechizvarwa chinotevera.