GaAs laser epitaxial wafer ine 4 inch VCSEL vertical cavity surface emission laser wavelength 940nm single junction

GaAs laser epitaxial wafer 4 inch 6 inch VCSEL vertical cavity surface emission laser wavelength 940nm single junction Mufananidzo Unoratidzwa

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Dhizaini yakatarwa nevatengi Gigabit Ethernet laser arrays yemhando yepamusoro ye 6-inch wafers 850/940nm centre optical wavelength oxide limited kana proton-implanted VCSEL digital data link communication, laser mouse electrical uye optical characteristics low sensitivity to tembiricha. VCSEL-940 Single Junction i vertical cavity surface emitting laser (VCSEL) ine emission wavelength inowanzoita 940 nanometers. Ma laser akadaro anowanzo kuve ne single quantum well uye anokwanisa kupa chiedza chinobuda zvakanaka. Wavelength ye 940 nanometers inoita kuti ive mu infrared spectrum, yakakodzera kushandiswa kwakasiyana-siyana. Zvichienzaniswa nedzimwe mhando dze lasers, VCsel dzine electro-optical conversion efficiency yakakwira. VCSEL package idiki uye iri nyore kubatanidza. Kushandiswa kwakakura kweVCSEL-940 kwakaita kuti iite basa rakakosha mu tekinoroji yemazuva ano.

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Hunhu hukuru hweGaAs laser epitaxial sheet hunosanganisira

1. Chimiro che "single-junction": Iyi laser inowanzo gadzirwa ne "single quantum well", iyo inogona kupa chiedza chinobuda zvakanaka.
2. Kureba kweWavelength: Kureba kwewavelength ye940 nm kunoita kuti ive mu infrared spectrum range, yakakodzera kushandiswa kwakasiyana-siyana.
3. Kushanda zvakanaka: Kana tichienzanisa nedzimwe mhando dzema laser, VCSEL ine electro-optical conversion efficiency yepamusoro.
4. Kunyatsokwana: Pakeji yeVCSEL idiki uye iri nyore kubatanidza.

5. Mwero wemagetsi wakaderera uye kushanda zvakanaka: Malaser e heterostructure akavigwa anoratidza mwero wemagetsi wakaderera zvikuru (semuenzaniso 4mA/cm²) uye kushanda zvakanaka kwekunze kwe quantum (semuenzaniso 36%), nesimba remagetsi rinodarika 15mW.
6. Kugadzikana kweWaveguide mode: Iyo yakavigwa heterostructure laser ine mukana wekugara kwewaveguide mode nekuda kwe refractive index guided waveguide mechanism yayo uye hupamhi hwe active strip hwakamanikana (inenge 2μm).
7. Kushanda zvakanaka kwazvo pakushandura magetsi nemagetsi: Nekuvandudza maitiro ekukura kwe epitaxial, kushanda zvakanaka kwemukati me quantum uye kushanda zvakanaka pakushandura magetsi nemagetsi nemagetsi zvinogona kuwanikwa kuderedza kurasikirwa kwemukati.
8. Kuvimbika kwakanyanya uye hupenyu: tekinoroji yekukura kwe epitaxial yepamusoro inogona kugadzirira mapepa epitaxial ane chitarisiko chakanaka pamusoro uye huwandu hushoma hwekukanganisa, zvichivandudza kuvimbika kwechigadzirwa uye hupenyu.
9. Yakakodzera kushandiswa kwakasiyana-siyana: GAAS-based laser diode epitaxial sheet inoshandiswa zvakanyanya mukukurukurirana kwefiber, mashandisirwo emaindasitiri, infrared ne photodetectors nedzimwe nzvimbo.

Nzira huru dzekushandisa pepa reGaAs laser epitaxial dzinosanganisira

1. Kutaurirana kwemaziso uye kutaurirana nedata: Mawafer epitaxial eGaAs anoshandiswa zvakanyanya mumunda wekutaurirana kwemaziso, kunyanya mumasisitimu ekukurukurirana kwemaziso anomhanya kwazvo, pakugadzira zvishandiso zvemagetsi zvakaita semalaser uye ma detector.

2. Mashandisirwo emaindasitiri: Mapepa eGaAs laser epitaxial anewo mashandisirwo akakosha mumashandisirwo emaindasitiri, akadai sekugadzirisa, kuyera uye kunzwa nelaser.

3. Magetsi emagetsi evatengi: Mumagetsi emagetsi evatengi, mawafer epitaxial eGaAs anoshandiswa kugadzira maVCsels (vertical cavity surface-emitting lasers), ayo anoshandiswa zvakanyanya mumafoni emafoni nemamwe magetsi emagetsi evatengi.

4. Mashandisirwo eRF: Zvinhu zveGaAs zvine zvakanakira zvikuru mumunda weRF uye zvinoshandiswa kugadzira michina yeRF inoshanda zvakanyanya.

5. MaLaser eQuantum dot: MaLaser eQuantum dot akavakirwa paGAAS anoshandiswa zvakanyanya mukukurukurirana, kurapa uye mauto, kunyanya mubhendi rekutaurirana re1.31µm.

6. Passive Q switch: GaAs absorber inoshandiswa kuma diode-pumped solid state lasers ane passive Q switch, iyo yakakodzera micro-machining, ranging uye micro-surgery.

Mashandisirwo aya anoratidza kugona kweGaAs laser epitaxial wafers mumhando dzakasiyana-siyana dzemashandisirwo epamusoro-soro.

XKH inopa mawafer epitaxial epitaxial eGaAs ane maumbirwo akasiyana uye ukobvu hwakagadzirirwa zvinodiwa nevatengi, achifukidza mashandisirwo akasiyana-siyana akadai seVCSEL/HCSEL, WLAN, 4G/5G base stations, nezvimwewo. Zvigadzirwa zveXKH zvinogadzirwa uchishandisa michina yepamusoro yeMOCVD kuti ive nechokwadi chekuti inoshanda uye yakavimbika. Panyaya yekutakura zvinhu, tine nzira dzakasiyana-siyana dzepasi rose, tinogona kubata nhamba yeodha nenzira inochinjika, uye kupa masevhisi akawedzerwa kukosha akadai sekutetepa, kupatsanura, nezvimwewo. Maitiro ekutumira anoshanda anovimbisa kutumirwa panguva uye kusangana nezvinodiwa nevatengi kuti zvive zvemhando yepamusoro uye nguva yekutumira. Mushure mekusvika, vatengi vanogona kuwana rutsigiro rwakakwana rwehunyanzvi uye sevhisi mushure mekutengesa kuti vave nechokwadi chekuti chigadzirwa chinoshandiswa zvakanaka.