Dia50.8mm Sapphire Wafer Sapphire Window High Optical Transmittance DSP/SSP

Tsanangudzo Pfupi

Nekuda kweiyo shoma isingaenderane lattice uye yakagadzikana makemikari uye emuviri zvimiro, sapphire(Al2O3) wafer ndiyo yakakurumbira substrates yeIII-V nitrides, superconductor uye magineti epi-firimu. Iwo anoshandiswa zvakanyanya muGaN uye yakaonda-firimu epitaxial kukura, silicon pasafire, LED musika uye optics indasitiri.

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Sei Sapphire?

Zvimiro zveimwe crystal sapphire
1. Sapphire ine high optical transmittance, saka inoshandiswa zvakanyanya se microelectronic chubhu dielectric material, ultrasonic conduction element, waveguide laser cavity, nezvimwe zvinhu zvemaziso, semahwindo emidziyo ye infrared yemauto, motokari dzemuchadenga, high-intensity lasers uye optical. kutaurirana.

2. Safire ine kuomarara kwakanyanya, kusimba kwepamusoro, tembiricha yekushanda, abrasion resistance, corrosion resistance properties, saka safire substrate inowanzoshandiswa munzvimbo dzakaoma, senge boiler water gauge (high-temperature resistance), commodity bar code scanner, kutakura, uye mamwe magadzirirwo ekugadzira (kupfeka kuramba), marasha, gasi, ma sensor sensors uye detector windows (anti-corrosion).

3. Safire ine maitiro ekudzivirira kwemagetsi, kujekesa, kunaka kwekushisa kwekushisa, uye kusimba kwepamusoro, saka inogona kushandiswa se substrate zvinhu zvemasekete akabatanidzwa, akadai se LED uye microelectronic circuits, ultra-high-speed integrated circuit.

Tsanangudzo

Diameter	50.8mm +/-0.1mm kana +/-0.02mm
Ukobvu	0.43mm± 0.1mm kana +/-0.02mm
Orientation	C-ndege/A-Plane/M-Plane/R-Ndege
Unhu hwepamusoro (kukwenya & kuchera)	60/40, 40/20 kana nani
Kurongeka kwepamusoro	λ/10, λ/2, λ
Clear Aperture	>85%, >90%
Parallelism	+/-3', +/-30''
Bevel	0.1 ~ 0.3mm×45 dhigirii
Coating	AR, BBAR kana pakukumbira kwevatengi (UV, VIS, IR)

Aihwa	Properties	Target	Kushivirira	Mashoko
1	Diameter	50.8mm	± 0.1mm
2	Ukobvu	430μm	±15μm
3	Surface orientation yeC-ndege	kubva kuC-axis kusvika kuM0.2 °	± 0.1°
4	Primary flat urefu	16mm	± 11mm
5	Primary flat orientation	Ndege (11-20)	±0.1°
6	Kuseri divi Roughness	0.8~1.2um
7	Front side Kukasharara	<0.3nm
8	Wafer edge	R-mhando
9	Total Ukobvu Kusiyana, TTV	≤ 10μm(LTV≤5μm, 5*5)
10	SORI	≤10μm
11	Bow	-10 μm ≤ BOW ≤ 0
12	Laser Mark	N/A		handina
	Package	25 zvimedu mune imwe kaseti
	Trace kugona	Mawafer anozoteedzeka maererano nenhamba yekaseti

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