Zvidimbu zveSiC Seed Crystal Substrates zvakagadzirwa Dia 205/203/208 4H-N Type yeOptical Communications

Tsananguro pfupi:

Zvigadziko zveSiC (silicon carbide) seed crystal substrates, senzira huru yekutakura zvinhu zve semiconductor zvechizvarwa chechitatu, zvinoshandisa high thermal conductivity yazvo (4.9 W/cm·K), ultra-high breakdown field strength (2–4 MV/cm), uye wide bandgap (3.2 eV)kuti zvishande sezvinhu zvekutanga zve optoelectronics, new energy cars, 5G communications, uye aerospace applications. Kuburikidza netekinoroji dzekugadzira dzakadai se physical vapor transport (PVT) uye liquid phase epitaxy (LPE), XKH inopa 4H/6H-N-type, semi-insulating, uye 3C-SiC polytype seed substrates mu 2–12-inch wafer formats, ne micropipe densities pasi pe 0.3 cm⁻², resistivity inotangira pa 20–23 mΩ·cm, uye surface roughness (Ra) <0.2 nm. Mabasa edu anosanganisira kukura kwe heteroepitaxial (semuenzaniso, SiC-on-Si), nanoscale precision machining (± 0.1 μm tolerance), uye kukurumidza kuendeswa kwepasi rose, zvichipa vatengi simba rekukunda zvipingamupinyi zvehunyanzvi uye kukurumidzisa carbon neutralite uye kushanduka kwakangwara.

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Magadzirirwo ehunyanzvi

Chidimbu chembeu yesilicon carbide
Mhando yePolytype	4H
Chikanganiso chekutarisa pamusoro	4°kunanga<11-20>±0.5º
Kuramba	kugadzirisa
Dhayamita	205±0.5mm
Ukobvu	600±50μm
Kuomarara	CMP,Ra≤0.2nm
Kuwanda kwepombi dze micropombi	≤1 imwe/cm2
Kukwenya	≤5, Hurefu Hwese ≤2 * Dhayamita
Zvidimbu/zvidimbu zvemucheto	Hapana
Kumaka kweLaser yepamberi	Hapana
Kukwenya	≤2, Hurefu Hwese ≤ Dhayamita
Zvidimbu/zvidimbu zvemucheto	Hapana
Nzvimbo dzemhando dzakasiyana-siyana	Hapana
Kumaka kweLaser yemusana	1mm (kubva kumucheto wepamusoro)
Mupendero	Chamfer
Kurongedza	Kaseti yewafer yakawanda

Hunhu Hunokosha

1. Chimiro cheKristaro uye Kushanda kweMagetsi

· Kugadzikana kweCrystallographic: 100% 4H-SiC polytype dominance, hapana multicrystalline inclusions (semuenzaniso, 6H/15R), ine XRD rocking curve yakazara pahafu yepamusoro (FWHM) ≤32.7 arcsec.

· Kufamba Kwepamusoro: Kufamba kwemaerekitironi e5,400 cm²/V·s (4H-SiC) uye kufamba kwemaburi e380 cm²/V·s, zvichigonesa dhizaini yemidziyo ine mafrequency akakwira.

·Kuomarara kweRadiation: Inodzivirira 1 MeV neutron irradiation ine muganhu wekukanganisika kwe1×10¹⁵ n/cm², yakakodzera kushandiswa mundege nenyukireya.

2. Hunhu hwekupisa uye hwemakanika

· Kufambisa Kunopisa Kunoshamisa: 4.9 W/cm·K (4H-SiC), katatu kupfuura silicon, inotsigira kushanda pamusoro pe200°C.

· Kuwedzerwa kweThermal Low: CTE ye4.0×10⁻⁶/K (25–1000°C), zvichiita kuti pave nekuenderana ne silicon-based packaging uye kuderedza kushushikana kwethermal.

3. Kudzora Zvikanganiso uye Kugadzirisa Kwazvo

· Kuwanda kweMicropipe: <0.3 cm⁻² (mawafers e-inch 8), kusimba kwedislocation <1,000 cm⁻² (zvakasimbiswa kuburikidza neKOH etching).

· Hunhu Hwepamusoro: CMP-yakapetwa kusvika Ra <0.2 nm, ichizadzisa zvinodiwa zveEUV lithography-grade flatness.

Zvishandiso Zvikuru

Domain	Maitiro Ekushandisa	Zvakanakira Zvehunyanzvi
Kutaurirana kweOptical	100G/400G lasers, silicon photonics hybrid modules	Zvigadziko zvembeu zveInP zvinogonesa direct bandgap (1.34 eV) uye Si-based heteroepitaxy, zvichideredza kurasikirwa kwe optical coupling.
Mota Itsva dzeSimba	Ma inverter emagetsi ane 800V ane simba guru, machaja ari mubhodhi (OBC)	Zvishandiso zve4H-SiC zvinotsungirira >1,200 V, zvichideredza kurasikirwa kwemhepo ne50% uye vhoriyamu yesystem ne40%.
Kutaurirana kwe5G	Midziyo yeRF yemafungu emagetsi eMillimeter-wave (PA/LNA), maamplifiers emagetsi ebase station	Zvishandiso zveSiC zvinodzivirira kupisa zvishoma (resistivity >10⁵ Ω·cm) zvinogonesa kubatanidzwa kwe "high-frequency" (60 GHz+).
Midziyo yeIndasitiri	Masensa ekupisa kwakanyanya, matransformer emagetsi, mamonita enyukireya	Zvishandiso zveInSb seed substrates (0.17 eV bandgap) zvinopa simba remagineti rinosvika 300% @ 10 T.

Zvakanakira Zvikuru

Zvigadziko zveSiC (silicon carbide) zvinopa mashandiro asina kujairika ne4.9 W/cm·K thermal conductivity, 2–4 MV/cm breakdown field strength, uye 3.2 eV wide bandgap, zvichiita kuti pave ne high-power, high-frequency, uye high-temperature applications. Zviine zero micropipe density uye <1,000 cm⁻² dislocation density, izvi zvinovimbisa kuvimbika mumamiriro ezvinhu akaipisisa. Chemical inertness yavo uye CVD-compatible surfaces (Ra <0.2 nm) zvinotsigira advanced heteroepitaxial growth (semuenzaniso, SiC-on-Si) ye optoelectronics uye EV power systems.

Masevhisi eXKH:

1. Kugadzirwa Kwakagadzirwa

· Mafomati eWafer Anochinjika: Mawafer ane 2–12-inch ane zvidimbu zvakatenderera, zverectangular, kana zvakagadzirwa nenzira yakasarudzika (± 0.01 mm tolerance).

· Kudzora Kushandiswa Kwedoro: Kushandiswa kwedoro renitrogen (N) nealuminium (Al) nemazvo kuburikidza neCVD, zvichiita kuti resistivity isvike pa10⁻³ kusvika 10⁶ Ω·cm.

2. Tekinoroji dzeMaitiro Epamusoro.

· Heteroepitaxy: SiC-on-Si (inoenderana nemitsetse yesilicon ine 8-inch) uye SiC-on-Diamond (thermal conductivity >2,000 W/m·K).

· Kuderedza Zvikanganiso: Kucheka nekubvisa hydrogen kuti ideredze zvikanganiso zve micropipe/density, zvichiita kuti goho re wafer riwedzere kusvika ku >95%.

3. Masisitimu Ekutarisira Hunhu.

· Kuongororwa kwekupedzisira: Raman spectroscopy (kuongorora kwepolytype), XRD (crystallinity), uye SEM (kuongorora kukanganisa).

· Zvitupa: Zvinoenderana neAEC-Q101 (mota), JEDEC (JEDEC-033), uye MIL-PRF-38534 (yepamusoro-soro yemauto).

4. Rutsigiro rweKugovera Kwepasi Pose.

· Kugona Kugadzira: Kuburitsa kwepamwedzi >10,000 wafers (60% 8-inch), nekutumira nekukurumidza kwemaawa makumi mana nemasere.

· Network yeLogistics: Kufukidzwa muEurope, North America, uye Asia-Pacific kuburikidza nekutakura zvinhu mumhepo/mugungwa nekurongedza kunodzorwa nekupisa.

5. Kubatana muKuvandudza Unyanzvi.

· Joint R&D Labs: Batira pamwe chete pakugadzirisa SiC power module packaging (semuenzaniso, DBC substrate integration).

· Rezenisi yeIP: Ipai rezenisi yeGaN-on-SiC RF epitaxial growth technology kuderedza mari yeR&D yevatengi.

Pfupiso

Zvigadzirwa zveSiC (silicon carbide) sembeu yekristaro, sezvinhu zvakakosha, zviri kuumbazve maindasitiri epasi rose kuburikidza nekubudirira mukukura kwekristaro, kudzora kukanganisa, uye kubatanidzwa kwakasiyana-siyana. Nekuenderera mberi nekusimudzira kuderedza kukanganisa kwewafer, kuwedzera kugadzirwa kwemainji 8, uye kuwedzera mapuratifomu eheteroepitaxial (semuenzaniso, SiC-on-Diamond), XKH inopa mhinduro dzakavimbika uye dzinodhura zvakanyanya dze optoelectronics, simba idzva, uye kugadzirwa kwepamusoro. Kuzvipira kwedu kune hunyanzvi kunoita kuti vatengi vatungamire mukusapindirana kwecarbon uye masisitimu akangwara, zvichitungamira nguva inotevera yenzvimbo dzakakura dze semiconductor.