Yakagadzirirwa GaN-on-SiC Epitaxial Wafers (100mm, 150mm) - Multiple SiC Substrate Options (4H-N, HPSI, 4H/6H-P)

Tsanangudzo Pfupi:

Yedu Yakagadzirirwa GaN-on-SiC Epitaxial Wafers inopa hukuru hwekuita kwepamusoro-simba, yakakwirira-frequency application nekubatanidza yakasarudzika zvivakwa zveGallium Nitride (GaN) neiyo yakasimba yekupisa conductivity uye kusimba kwemagetsi e.Silicon Carbide (SiC). Inowanikwa mu100mm uye 150mm wafer saizi, aya mawafer akavakirwa pane akasiyana eSiC substrate sarudzo, kusanganisira 4H-N, HPSI, uye 4H/6H-P mhando, dzakagadzirirwa kusangana nezvinodiwa zvemagetsi emagetsi, RF amplifiers, uye zvimwe zvepamberi semiconductor zvishandiso. Iine customizable epitaxial layers uye akasiyana eSiC substrates, mawafer edu akagadzirirwa kuve nechokwadi chekushanda kwepamusoro, kutonga kwemafuta, uye kuvimbika kwekuda maindasitiri ekushandisa.

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Features

●Epitaxial Layer Thickness: Customizable kubva1.0 µmku3.5 µm, yakagadziridzwa simba repamusoro uye frequency performance.

●SiC Substrate Options: Inowanikwa neakasiyana maSiC substrates, anosanganisira:

4H-N: High-quality Nitrogen-doped 4H-SiC ye-high-frequency, high-power applications.
HPSI: High-Purity Semi-Insulating SiC yezvikumbiro zvinoda kuparadzaniswa kwemagetsi.
4H/6H-P: Yakasanganiswa 4H uye 6H-SiC yekuenzanisa kwepamusoro-soro uye kuvimbika.

●Wafer Size: Inowanikwa mukati100mmuye150mmmadhayamita ekusiyana-siyana mukuyera kwechigadzirwa uye kubatanidza.

● High Breakdown Voltage: GaN paSiC tekinoroji inopa yakakwira yekuputsika voltage, ichigonesa kuita kwakasimba mumashandisirwo emagetsi epamusoro.

● High Thermal Conductivity: SiC's inherent thermal conductivity (inenge 490 W/m·K) inochengetedza kupisa kwakanakisa kwekushandisa kwesimba-yakanyanya.

Zvinotaurwa Nezvehunyanzvi

Parameter	Value
Wafer Diameter	100mm, 150mm
Epitaxial Layer Thickness	1.0 µm - 3.5 µm (inogoneka)
SiC Substrate Mhando	4H-N, HPSI, 4H/6H-P
SiC Thermal Conductivity	490 W/m·K
SiC Resistivity	4H-N: 10^6 Ω·cm,HPSI: Semi-Insulating,4H/6H-P: Yakasanganiswa 4H/6H
GaN Layer Ukobvu	1.0 µm - 2.0 µm
GaN Carrier Concentration	10^18 cm^-3 kusvika 10^19 masendimita^-3 (customizable)
Wafer Surface Hunhu	RMS Hushasha: <1 nm
Dislocation Density	<1 x 10^6 cm^-2
Wafer Bow	<50µm
Wafer Flatness	<5 µm
Maximum Operating Temperature	400°C (yakajairika kumidziyo yeGaN-on-SiC)

Applications

●Magetsi Emagetsi:GaN-on-SiC wafers anopa kushanda kwepamusoro uye kupisa kupisa, zvichiita kuti zvive zvakanaka kune magetsi amplifiers, magetsi ekushandura magetsi, uye magetsi-inverter circuits anoshandiswa mumotokari dzemagetsi, magetsi emagetsi emagetsi, uye michina yemaindasitiri.
● RF Power Amplifiers:Iko kusanganiswa kweGaN neSiC kwakaringana kune yakakwira-frequency, yakakwirira-simba RF zvikumbiro senge telecommunications, setiraiti kutaurirana, uye radar masisitimu.
● Muchadenga uye Dziviriro:Aya mawafer akakodzera aerospace uye tekinoroji yekudzivirira inoda yakakwirira-kuita magetsi emagetsi uye masisitimu ekutaurirana anogona kushanda pasi pemamiriro akaoma.
●Automotive Applications:Yakanakira masisitimu emagetsi epamusoro-soro mumotokari dzemagetsi (EVs), mota dzakasanganiswa (HEVs), uye zviteshi zvekuchaja, zvichiita kuti simba rishandurwe uye ridzore.
●Mauto neRadar Systems:GaN-on-SiC wafers anoshandiswa muma radar masisitimu ekushanda kwawo kwepamusoro, masimba ekubata masimba, uye mashandiro ekupisa munzvimbo dzinoda.
●Microwave uye Millimeter-Wave Zvishandiso:Kune inotevera-chizvarwa masisitimu ekutaurirana, anosanganisira 5G, GaN-on-SiC inopa optimal performance in high-power microwave uye millimeter-wave ranges.

Q&A

Q1: Ndeapi mabhenefiti ekushandisa SiC se substrate yeGaN?

A1:Silicon Carbide (SiC) inopa yepamusoro yekupisa conductivity, yakakwira breakdown voltage, uye simba remuchina zvichienzaniswa netsika dzepasi sesilicon. Izvi zvinoita kuti GaN-on-SiC wafers ive yakanaka kune yakakwirira-simba, yakakwirira-frequency, uye yakakwirira-tembiricha application. Iyo SiC substrate inobatsira kubvisa kupisa kunogadzirwa neGaN zvishandiso, kunatsiridza kuvimbika uye kuita.

Q2: Ko epitaxial layer gobvu inogona kugadzirwa kune chaiyo maapplication?

A2:Ehe, iyo epitaxial layer ukobvu inogona kugadzirwa mukati memhando ye1.0 µm kusvika 3.5 µm, zvinoenderana nesimba uye frequency zvinodiwa zvekushandisa kwako. Isu tinokwanisa kugadzirisa iyo GaN layer ukobvu kukwirisa mashandiro emidziyo chaiyo semagetsi amplifiers, RF masisitimu, kana yakakwirira-frequency maseketi.

Q3: Ndeupi musiyano uripo pakati pe4H-N, HPSI, uye 4H/6H-P SiC substrates?

A3:

4H-N: Nitrogen-doped 4H-SiC inowanzoshandiswa kune yakakwirira-frequency zvikumbiro zvinoda kushanda kwemagetsi.
HPSI: High-Purity Semi-Insulating SiC inopa magetsi ega ega, akanakira maapplication anoda mashoma emagetsi conductivity.
4H/6H-P: Musanganiswa we4H uye 6H-SiC iyo inoenzanisa kushanda, ichipa musanganiswa wepamusoro-soro uye kusimba, yakakodzera kune akasiyana-siyana magetsi emagetsi ekushandisa.

Q4: Aya maGaN-on-SiC mawafer akakodzera kune-high-simba maapplication senge mota dzemagetsi uye simba rinodzokororwa?

A4:Hongu, GaN-on-SiC wafers akanyatsokodzera kune yakakwirira-simba maapplication senge mota dzemagetsi, renewable simba, uye maindasitiri masisitimu. Iyo yakakwira breakdown voltage, yakakwira yekupisa yekupisa, uye masimba ekubata masimba eGaN-on-SiC zvishandiso zvinovagonesa kuita zvinobudirira mukudaidzira shanduko yemagetsi uye kutonga maseketi.

Q5: Ndeipi yakajairika dislocation density yeawa mawafer?

A5:Iyo dislocation density yeaya GaN-on-SiC wafers anowanzo<1 x 10^6 cm^-2, iyo inovimbisa kukura kwepamusoro-soro epitaxial, kuderedza kukanganisa nekuvandudza kushandiswa kwechigadzirwa uye kuvimbika.

Q6: Ndingakumbira here saizi chaiyo yewafer kana SiC substrate mhando?

A6:Ehe, isu tinopa akagadziridzwa saizi yewafer (100mm uye 150mm) uye SiC substrate marudzi (4H-N, HPSI, 4H/6H-P) kusangana nezvinodiwa zvekushandisa kwako. Ndapota taura nesu kuti uwane mamwe maitiro ekugadzirisa uye kukurukura zvaunoda.

Q7: GaN-on-SiC wafers anoita sei munzvimbo dzakanyanyisa?

A7:GaN-on-SiC wafers akanakira nharaunda dzakanyanyisa nekuda kwekudzikama kwadzo kwekushisa, kubata kwesimba repamusoro, uye kugona kukuru kwekupisa kupisa. Aya mawaferi anoita zvakanaka mukupisa kwepamusoro-soro, simba repamusoro, uye yakakwirira-frequency mamiriro anowanzo sangana mune aerospace, kudzivirira, uye maindasitiri kunyorera.

Mhedziso

Yedu Yakagadzirirwa GaN-on-SiC Epitaxial Wafers inosanganisa zvivakwa zvepamberi zveGaN neSiC kuti zvipe kushanda kwepamusoro-soro musimba repamusoro-soro uye yakakwirira-frequency application. Iine akawanda eSiC substrate sarudzo uye customizable epitaxial layers, aya mawaferi akanakira maindasitiri anoda hunyanzvi hwepamusoro, kutonga kwekupisa, uye kuvimbika. Ingave yemagetsi emagetsi, masisitimu eRF, kana maapplication ekudzivirira, yedu GaN-on-SiC wafers inopa kuita uye kuchinjika kwaunoda.