MaWafers eGaN-on-SiC Epitaxial Akagadzirwa (100mm, 150mm) – Sarudzo Dzakawanda dzeSiC Substrate (4H-N, HPSI, 4H/6H-P)

Tsananguro pfupi:

MaWafer edu eGaN-on-SiC Epitaxial Wafers akagadzirwa nemaoko anopa mashandiro akanaka kwazvo ekushandisa simba guru, nekubatanidza hunhu hwakanaka hweGallium Nitride (GaN) nekupisa kwakasimba uye simba remuchina reSilicon Carbide (SiC). Mawafer aya anowanikwa muhukuru hwe100mm ne150mm, akavakirwa pamhando dzakasiyana dzeSiC substrate, kusanganisira mhando dze4H-N, HPSI, uye 4H/6H-P, dzakagadzirirwa kusangana nezvinodiwa zvemagetsi emagetsi, maRF amplifiers, nezvimwe zvishandiso zvepamusoro zve semiconductor. Nema layers epitaxial anogadziriswa uye ma substrates eSiC akasiyana, mawafer edu akagadzirwa kuti ave nechokwadi chekuti anoshanda zvakanaka, anochengetedza kupisa, uye akavimbika kune mashandisirwo anoda simba mumaindasitiri.

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Zvinhu zvirimo

●Kukora kweEpitaxial Layer: Inogona kugadziriswa kubva1.0 µmku3.5 µm, yakagadzirirwa kushanda nesimba rakawanda uye frequency.

●Sarudzo dzeSiC Substrate: Inowanikwa neSiC substrates dzakasiyana-siyana, dzinosanganisira:

4H-N: 4H-SiC ine Nitrogen-doped yepamusoro-soro inoshandiswa pakushandisa simba rakawanda.
HPSI: High-Purity Semi-Insulating SiC yekushandiswa kunoda kupatsanurwa kwemagetsi.
4H/6H-P: Yakasanganiswa 4H ne6H-SiC kuti pave nekuenzana kwekushanda zvakanaka uye kuvimbika.

●Saizi dzeWafer: Inowanikwa mu100mmuye150mmdhayamita dzekushandisa pakuwedzera nekubatanidza michina.

●Kuparara Kwemagetsi Kwakanyanya: GaN paSiC tekinoroji inopa voltage yakanyanya kupwanyika, zvichiita kuti ishande zvakanaka mumashandisirwo ane simba guru.

●Kufambisa Kwekupisa Kwakanyanya: SiC inofambisa kupisa kwemuviri (inenge 490 W/m·K) inoita kuti kupisa kupararire zvakanaka pakushandisa simba rakawanda.

Magadzirirwo ehunyanzvi

Paramita	Kukosha
Dhayamita yeWafer	100mm, 150mm
Ukobvu hweEpitaxial Layer	1.0 µm – 3.5 µm (inogadziriswa)
Mhando dzeSiC Substrate	4H-N, HPSI, 4H/6H-P
SiC Kufambisa Kwekupisa	490 W/m·K
Kuramba kweSiC	4H-N: 10^6 Ω·cm,HPSI: Inodziisa zvishoma,4H/6H-P: Yakasanganiswa 4H/6H
Ukobvu hweGaN Layer	1.0 µm – 2.0 µm
Kuwanda kweGaN Carrier	10^18 cm^-3 kusvika 10^19 cm^-3 (inogadziriswa)
Hunhu hwepamusoro hweWafer	RMS Kuomarara: < 1 nm
Kuwanda kweDislocation	< 1 x 10^6 cm^-2
Wafer Uta	< 50 µm
Wafer Flatness	< 5 µm
Kupisa Kunoshanda Kwakanyanya	400°C (zvinowanzoitwa nemidziyo yeGaN-on-SiC)

Mashandisirwo

●Magetsi Emagetsi:Mawafer eGaN-on-SiC anoshanda zvakanyanya uye anobvisa kupisa, zvichiita kuti akwanise kushandiswa pakuwedzera simba, midziyo yekushandura simba, uye macircuit emagetsi anoshandiswa mumotokari dzemagetsi, masisitimu esimba rinogona kudzokororwa, uye michina yeindasitiri.
●Ma RF Power Amplifiers:Kusanganiswa kweGaN neSiC kwakanakira mashandisirwo eRF ane simba guru, akadai sekutaurirana nefoni, kutaurirana nesatellite, uye masisitimu eradar.
●Ndege neDziviriro:Mawafer aya akakodzera matekinoroji emuchadenga nekudzivirira anoda magetsi emagetsi anoshanda nesimba uye masisitimu ekutaurirana anogona kushanda mumamiriro ezvinhu akaoma.
●Mashandisirwo Emotokari:Yakanakira masisitimu emagetsi anoshanda zvakanyanya mumotokari dzemagetsi (EV), mota dzehybrid (HEV), uye nzvimbo dzekuchaja, zvichiita kuti magetsi ashandurwe uye adzorwe zvakanaka.
●Masisitimu eMasoja neRadar:Mawafer eGaN-on-SiC anoshandiswa muma radar systems nekuda kwekushanda kwawo zvakanaka, kugona kwawo kubata simba, uye kushanda kwawo mukupisa munzvimbo dzinoda simba rakawanda.
●Mashandisirwo eMicrowave neMillimeter-Wave:Kune masisitimu ekutaurirana echizvarwa chinotevera, anosanganisira 5G, GaN-on-SiC inopa mashandiro akanaka kwazvo mu microwave ine simba guru uye millimeter-wave ranges.

Mibvunzo neMhinduro

Mubvunzo 1: Ndezvipi zvakanakira kushandisa SiC sechikamu cheGaN?

A1:Silicon Carbide (SiC) inopa simba repamusoro rekupisa, voltage yakanyanya kupwanyika, uye simba remakanika zvichienzaniswa nemidziyo yechinyakare yakaita sesilicon. Izvi zvinoita kuti mawafer eGaN-on-SiC akwanise kushandiswa nemagetsi ane simba guru, mafrequency akawanda, uye tembiricha yepamusoro. Iyo SiC substrate inobatsira kubvisa kupisa kunogadzirwa nemidziyo yeGaN, zvichivandudza kuvimbika uye mashandiro.

Mubvunzo wechipiri: Ko ukobvu hwe epitaxial layer hunogona kugadziriswa here kuti hushandiswe zvakananga?

A2:Ehe, ukobvu hwe epitaxial layer hunogona kugadziriswa mukati memhando dzakasiyana-siyana1.0 µm kusvika 3.5 µm, zvichienderana nesimba uye zvinodiwa nekushandiswa kwenyu. Tinogona kugadzirisa ukobvu hweGaN layer kuti tigadzirise mashandiro emidziyo chaiyo yakaita semagetsi amplifiers, RF systems, kana macircuit ane mafrequency akawanda.

Mubvunzo 3: Ndeupi musiyano uripo pakati pe4H-N, HPSI, uye 4H/6H-P SiC substrates?

A3:

4H-N: 4H-SiC ine nitrogen-doped inowanzo shandiswa pamapurogiramu epamusoro-soro anoda mashandiro emagetsi akakwira.
HPSI: High-Purity Semi-Insulating SiC inopa kupatsanurwa kwemagetsi, yakakodzera kushandiswa kusingade kufambisa magetsi zvakanyanya.
4H/6H-P: Musanganiswa we4H ne6H-SiC unoenzanisa mashandiro, uchipa musanganiswa wekushanda nesimba uye kusimba, wakakodzera kushandiswa kwakasiyana-siyana kwemagetsi emagetsi.

Mubvunzo wechina: Mawafer aya eGaN-on-SiC akakodzera kushandiswa nemagetsi ane simba guru here semotokari dzemagetsi uye simba rinodzokororwa?

A4:Ehe, mawafer eGaN-on-SiC akakodzera kushandiswa nesimba guru semotokari dzemagetsi, simba rinodzokororwa, uye masisitimu emaindasitiri. Voltage yakanyanya kupwanyika, kupisa kwakanyanya, uye kugona kubata simba kwemidziyo yeGaN-on-SiC zvinoita kuti ikwanise kushanda zvakanaka mukuchinja simba zvakanyanya uye kudzora macircuit.

Mubvunzo 5: Ndeupi huwandu hwema "dislocation" akajairika ema "wafers" aya?

A5:Kuwanda kwemafuta aya eGaN-on-SiC anoshandiswa pakupatsanurana kwemvura kunowanzo kuve< 1 x 10^6 cm^-2, iyo inoita kuti epitaxial ikure zvakanaka, ichideredza zvikanganiso uye inovandudza mashandiro emudziyo uye kuvimbika kwawo.

Mubvunzo wechitanhatu: Ndingakumbira saizi chaiyo yewafer kana rudzi rweSiC substrate here?

A6:Ehe, tinopa saizi dzewafer dzakagadzirwa (100mm ne150mm) uye mhando dzeSiC substrate (4H-N, HPSI, 4H/6H-P) kuti zvienderane nezvinodiwa zvechikumbiro chenyu. Ndapota taurai nesu kuti muwane dzimwe sarudzo dzekugadzirisa uye kuti mukurukure zvamunoda.

Mubvunzo 7: Mawafer eGaN-on-SiC anoshanda sei munzvimbo dzakaoma?

A7:Mawafer eGaN-on-SiC akanakira nzvimbo dzakanyanya kushata nekuda kwekugadzikana kwawo pakupisa kwakanyanya, kubata nesimba rakawanda, uye kugona kwawo kupisa kwakanyanya. Mawafer aya anoshanda zvakanaka mumamiriro ekupisa kwakanyanya, simba rakawanda, uye frequency yakakwira inowanzo sangana nayo mundege, dziviriro, uye maindasitiri.

Mhedziso

MaWafer edu eGaN-on-SiC Epitaxial Wafers akagadzirwa nemaoko anosanganisa hunhu hwepamusoro hweGaN neSiC kuti ape mashandiro epamusoro mukushandiswa kwesimba guru uye frequency yepamusoro. Nesarudzo dzakawanda dzeSiC substrate uye epitaxial layers dzinogadziriswa, mawafers aya akanakira maindasitiri anoda kushanda zvakanyanya, kutarisirwa kwekupisa, uye kuvimbika. Ingave yemagetsi emagetsi, masisitimu eRF, kana maapplication ekudzivirira, mawafers edu eGaN-on-SiC anopa mashandiro uye kushanduka kwaunoda.