Mhando yeSiC Mbeu Substrate yemhando yeN Type Dia153/155mm yeMagetsi Emagetsi

Mhando yeSiC Seed Substrate Dia153/155mm yeMagetsi Emagetsi Akagadzirwa Nesimba Mufananidzo Wakatsanangurwa

Tsananguro pfupi:

Zvigadziko zvembeu zveSilicon Carbide (SiC) zvinoshanda sezvinhu zvekutanga zvema semiconductors echizvarwa chechitatu, zvinosiyaniswa nekufambiswa kwadzo kwekupisa kwakanyanya, simba remagetsi rinopwanyika zvakanyanya, uye kufamba kwema electron kwakakwira. Hunhu uhwu hunoita kuti zvive zvakakosha pamagetsi emagetsi, zvishandiso zveRF, mota dzemagetsi (EVs), uye mashandisirwo esimba rinodzokororwa. XKH inonyanya kuita R&D uye kugadzirwa kwezvigadziko zvembeu zveSiC zvemhando yepamusoro, ichishandisa matekiniki ekukura kwekristaro akadai sePhysical Vapor Transport (PVT) uye High-Temperature Chemical Vapor Deposition (HTCVD) kuona kuti crystalline inotungamira muindasitiri.

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XKH inopa 4-inch, 6-inch, uye 8-inch SiC seed substrates ine N-type/P-type doping inogadziriswa, zvichiita kuti ikwanise kusimba kubva pa0.01-0.1 Ω·cm uye dislocation densities iri pasi pe500 cm⁻², zvichiita kuti ive yakanaka pakugadzira MOSFETs, Schottky Barrier Diodes (SBDs), uye IGBTs. Maitiro edu ekugadzira akabatanidzwa anosanganisira kukura kwekristaro, kucheka wafer, kupukuta, uye kuongorora, nekugadzira kwakawanda kunodarika 5,000 wafers pamwedzi kuti isangane nezvinodiwa nemasangano ekutsvagisa, vagadziri ve semiconductor, uye makambani esimba rinodzokororwa.

Pamusoro pezvo, tinopa mhinduro dzakagadzirirwa, dzinosanganisira:

Kugadzirisa magadzirirwo ekristaro (4H-SiC, 6H-SiC)

Mishonga yekurapa (Aluminium, Nitrogen, Boron, nezvimwewo)

Kupukuta kwakapfava zvakanyanya (Ra < 0.5 nm)

XKH inotsigira kugadziriswa kwakavakirwa pamuenzaniso, kubvunzana kwehunyanzvi, uye kugadzira maprototypes madiki kuti ipe mhinduro dzakagadzirwa zvakanaka dzeSiC substrate.

Magadzirirwo ehunyanzvi

Chidimbu chembeu yesilicon carbide
Mhando yePolytype	4H
Chikanganiso chekutarisa pamusoro	4°kunanga<11-20>±0.5º
Kuramba	kugadzirisa
Dhayamita	205±0.5mm
Ukobvu	600±50μm
Kuomarara	CMP,Ra≤0.2nm
Kuwanda kwepombi dze micropombi	≤1 imwe/cm2
Kukwenya	≤5, Hurefu Hwese ≤2 * Dhayamita
Zvidimbu/zvidimbu zvemucheto	Hapana
Kumaka kweLaser yepamberi	Hapana
Kukwenya	≤2, Hurefu Hwese ≤ Dhayamita
Zvidimbu/zvidimbu zvemucheto	Hapana
Nzvimbo dzemhando dzakasiyana-siyana	Hapana
Kumaka kweLaser yemusana	1mm (kubva kumucheto wepamusoro)
Mupendero	Chamfer
Kurongedza	Kaseti yewafer yakawanda

Zvidimbu zveSiC Seed - Hunhu Hukuru

1. Hunhu Hwakanaka Hwemuviri

· Kupisa kwakanyanya (~490 W/m·K), kunopfuura zvakanyanya silicon (Si) ne gallium arsenide (GaAs), zvichiita kuti ive yakakodzera kutonhora kwemidziyo ine simba rakawanda.

· Simba remunda wekupatsanurwa (~3 MV/cm), zvichiita kuti kushanda kugare kwakasimba mumamiriro ezvinhu ane voltage yakakwira, zvakakosha kune maEV inverters nemaindasitiri emagetsi.

· Nzvimbo yakakura yebhandi (3.2 eV), inoderedza kubuda kwemvura pakupisa kwakanyanya uye inowedzera kuvimbika kwemuchina.

2. Hunhu Hwepamusoro hweCrystalline

· Tekinoroji yekukura kwePVT + HTCVD hybrid inoderedza zvikanganiso zve micropope, ichichengetedza huwandu hwe dislocation huri pasi pe500 cm⁻².

· Wafer bow/warp < 10 μm uye surface roughness Ra < 0.5 nm, zvichiita kuti ienderane ne high-precision lithography uye thin-film deposition processes.

3. Sarudzo dzakasiyana-siyana dzekushandisa Doping

·N-type (yakaiswa Nitrogen): Kudzivirira kwakaderera (0.01-0.02 Ω·cm), kwakagadzirirwa zvishandiso zveRF zvine frequency yakakwira.

· P-type (Yakaiswa Aluminum): Yakanakira maMOSFET ane simba uye maIGBT, zvichivandudza kufamba kwemutakurwi.

· Semi-insulating SiC (Vanadium-doped): Resistivity > 10⁵ Ω·cm, yakagadzirirwa 5G RF front-end modules.

4. Kugadzikana Kwezvakatipoteredza

· Kudzivirira kupisa kwakanyanya (>1600°C) uye kuomarara kwemwaranzi, zvakakodzera kushandiswa mundege, michina yenyukireya, nedzimwe nzvimbo dzakaoma.

Zvidimbu zveSiC Seed - Mashandisirwo Akakosha

1. Magetsi Emagetsi Emagetsi

· Mota dzemagetsi (EV): Dzinoshandiswa mumachaja ari mundege (OBC) uye muma inverter kuvandudza mashandiro uye kuderedza zvinodiwa pakutarisira kupisa.

· Masisitimu eMagetsi eIndasitiri: Anovandudza ma inverter e photovoltaic uye ma grid akangwara, zvichiita kuti pave nekushanda zvakanaka kwe >99% kwesimba remagetsi.

2. Midziyo yeRF

· 5G Base Stations: Zvishandiso zveSiC zvinodzivirira kupisa zvinogonesa ma amplifiers esimba reGaN-on-SiC RF, zvichitsigira kutumira masaini ane simba guru uye ane frequency yakawanda.

Kutaurirana kweSatellite: Hunhu hwesainzi hushoma hunoita kuti ive yakakodzera michina yemafungu emamiriyoni.

3. Kuchengetera Simba Rinodzokororwa & Simba

· Simba rezuva: SiC MOSFETs inowedzera kushanda zvakanaka kweDC-AC uku ichideredza mitengo yesystem.

· Masisitimu Ekuchengetera Simba (ESS): Inogadzirisa ma converter emagetsi maviri uye inowedzera hupenyu hwebhatiri.

4. Dziviriro & Ndege

· Masisitimu eRadar: Midziyo yeSiC ine simba guru inoshandiswa mumaradar eAESA (Active Electronically Scanned Array).

· Kutarisira Simba reChikepe Chemuchadenga: Zvishandiso zveSiC zvisingapindi mumwaranzi zvakakosha pamabasa emuchadenga.

5. Tsvagiridzo & Tekinoroji Dziri Kubuda

· Quantum Computing: High-purity SiC inogonesa tsvakiridzo ye spin qubit.

· MaSensor ekupisa kwakanyanya: Anoshandiswa mukutsvaga mafuta uye mukutarisa ma reactor enyukireya.

Zvidimbu zveSiC Seed Substrates - XKH Services

1. Zvakanakira zveKugovera

· Kugadzira kwakabatana zvakananga: Kudzora kwakazara kubva paupfu hweSiC hwakachena zvakanyanya kusvika kumawafer apera, zvichiita kuti nguva yekutungamira yemavhiki mana kusvika matanhatu ezvigadzirwa zvakajairwa ikwane.

· Kukwikwidzana kwemitengo: Hupfumi hwenzvimbo hunogonesa mitengo yakaderera ne15-20% pane vanokwikwidza, nerutsigiro rweZvibvumirano Zvenguva Refu (LTAs).

2. Mabasa Ekugadzirisa

· Kurongeka kwekristaro: 4H-SiC (yakajairwa) kana 6H-SiC (mashandisirwo akasarudzika).

· Kugadzirisa kushandisa mishonga inodhaka: Hunhu hwakagadziriswa hwemhando yeN/mhando yeP/hunodzivirira mvura zvishoma.

· Kupukuta kwepamusoro: Kupukuta kweCMP uye kurapwa kwepamusoro-soro (Ra < 0.3 nm).

3. Rutsigiro rwehunyanzvi

· Kuyedzwa kwemuenzaniso wemahara: Kunosanganisira XRD, AFM, uye mishumo yekuyera mhedzisiro yeHall.

· Rubatsiro rwekufananidzira kwemudziyo: Runotsigira kukura kwe epitaxial uye kugadzirisa dhizaini yemudziyo.

4. Kukurumidza Kupindura

· Kugadzira ma prototypes mashoma: Odha shoma yema wafers gumi, anounzwa mukati memavhiki matatu.

· Kufambiswa kwezvinhu pasi rose: Kudyidzana neDHL neFedEx pakutumira zvinhu pamba nemba.

5. Kuvimbisa Hunhu

· Kuongorora kwakazara: Kunofukidza X-ray topography (XRT) uye kuongorora defect density analysis.

· Zvitupa zvepasi rose: Zvinoenderana neIATF 16949 (yemhando yemotokari) uye mitemo yeAEC-Q101.

Mhedziso

Zvigadzirwa zveSiC zveXKH zvinobudirira mumhando yepamusoro, kugadzikana kwecheni yekugovera, uye kuchinjika kwekugadzirisa, zvichipa magetsi emagetsi, kutaurirana kwe5G, simba rinogona kudzokororwa, uye matekinoroji ekudzivirira. Tiri kuramba tichisimudzira tekinoroji yekugadzira SiC ye8-inch kuti tifambise mberi indasitiri yesemiconductor yechizvarwa chechitatu.

Yakapfuura: SiC ceramic plate/tray ye 4inch 6inch wafer holder ye ICP

Zvinotevera: Zvidimbu zveSiC Seed Crystal Substrates zvakagadzirwa Dia 205/203/208 4H-N Type yeOptical Communications