Tsika N Type SiC Mbeu Substrate Dia153/155mm Yemagetsi Emagetsi

Tsanangudzo Pfupi

Silicon Carbide (SiC) yembeu substrates inoshanda sechinhu chekutanga chechizvarwa chechitatu semiconductors, inosiyaniswa neyakasiyana-siyana yekupisa yekupisa conductivity, kuparara kwepamusoro kwesimba remagetsi emumunda, uye yakakwira erekitironi kufamba. Izvi zvivakwa zvinoita kuti zvive zvakakosha pamagetsi emagetsi, zvishandiso zveRF, mota dzemagetsi (EVs), uye kushandiswazve kwesimba rekushandisa. XKH inyanzvi muR&D nekugadzirwa kwemhando yepamusoro-soro yembeu yeSiC, ichishandisa nzira dzepamusoro dzekukura kwekristaro dzakadai sePhysical Vapor Transport (PVT) uye Yepamusoro-Tembiricha Chemical Vapor Deposition (HTCVD) kuve nechokwadi chekuti indasitiri inotungamira mhando yekristaro.

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Features

Introduce

XKH inopa 4-inch, 6-inch, uye 8-inch SiC mhodzi substrates ine customizable N-type/P-mhando doping, kuwana resistivity mazinga e0.01-0.1 Ω·cm uye dislocation densities pazasi 500 cm⁻², achivaita akakodzera kugadzira MOSFETs, Schottky Barriers Digitare (Schottky Barriers) uye IBDT. Yedu yakanyatsobatanidzwa yekugadzira maitiro inovhara kukura kwekristaro, kuchekwa kwewaferi, kupukuta, uye kuongorora, ine mwedzi wega wega kugadzira inodarika zviuru zvishanu zvitete kuti isangane nezvinodiwa zvakasiyana zvemasangano ekutsvagisa, vanogadzira semiconductor, uye makambani emagetsi anovandudzwa.

Uyezve, tinopa zvigadziriso zvetsika, kusanganisira:

Crystal orientation kugadzirisa (4H-SiC, 6H-SiC)

Specialized doping (Aluminium, Nitrogen, Boron, nezvimwewo)

Ultra-yakatsetseka kupenya (Ra <0.5 nm)

XKH inotsigira sampuli-yakavakirwa kugadzirisa, kubvunzana kwehunyanzvi, uye diki-batch prototyping kuendesa yakagadziridzwa SiC substrate mhinduro.

Technical parameters

Silicon carbide seed wafer
Polytype	4H
Kutadza kwekutarisa pamusoro	4°kunanga<11-20>±0.5º
Resistivity	customization
Diameter	205±0.5mm
Ukobvu	600±50μm
Kukasharara	CMP, Ra≤0.2nm
Micropipe Density	≤1 ea/cm2
Makwara	≤5,Kureba Kwakazara≤2*Diameter
Edge chips/indents	Hapana
Front laser marking	Hapana
Makwara	≤2, Hurefu Hwose≤Diameter
Edge chips/indents	Hapana
Polytype nzvimbo	Hapana
Back laser marking	1mm (kubva kumusoro kumucheto)
Edge	Chamfer
Packaging	Multi-wafer cassette

SiC Seed Substrates - Hunhu Hunokosha

1. Zvinhu Zvokunyama Zvinoshamisa

· High thermal conductivity (~ 490 W/m·K), ichipfuura zvakanyanya silicon (Si) uye gallium arsenide (GaAs), zvichiita kuti ive yakakodzera kune yakakwirira-simba-density mudziyo kutonhora.

· Kuputsa simba remunda (~ 3 MV / cm), kugonesa kushanda kwakadzikama pasi pepamusoro-voltage mamiriro, yakakosha kune EV inverters uye maindasitiri emagetsi module.

* Wide bandgap (3.2 eV), kudzikisa kuvuza kwemvura pakupisa kwakanyanya uye kuwedzera kuvimbika kwechishandiso.

2. Superior Crystalline Quality

· PVT + HTCVD hybrid yekukura tekinoroji inoderedza kukanganiswa kwemicropipe, kuchengetedza kusarongeka kwakadzika pasi pe500 cm⁻².

· Wafer bow/warp <10 μm uye roughness yepasi Ra <0.5 nm, kuve nechokwadi kuenderana nepamusoro-chaiyo lithography uye yakaonda-firimu deposition process.

3. Diverse Doping Options

·N-mhando (Nitrogen-doped): Low resistivity (0.01-0.02 Ω·cm), yakagadziridzwa kune yakakwirira-frequency RF zvishandiso.

· P-mhando (Aluminium-doped): Yakanakira simba MOSFETs uye IGBTs, inovandudza mutakuri wekufamba.

Semi-insulating SiC (Vanadium-doped): Resistivity> 10⁵ Ω·cm, yakagadzirirwa 5G RF kumberi-kuguma modules.

4. Kugadzikana Kwezvakatipoteredza

Kudzivirira kwepamusoro-tembiricha (> 1600 ° C) uye kuomarara kwemwaranzi, inokodzera muchadenga, midziyo yenyukireya, uye dzimwe nharaunda dzakanyanyisa.

SiC Seed Substrates - Primary Applications

1. Power Electronics

· Mota dzeMagetsi (EVs): Inoshandiswa mu-bhodhi majaja (OBC) uye inverters kuvandudza kushanda zvakanaka uye kuderedza kupisa kwekutonga zvinodiwa.

· Industrial Power Systems: Inovandudza photovoltaic inverters uye smart grids, kubudirira> 99% simba rekushandura simba.

2. RF Devices

· 5G Base Stations: Semi-insulating SiC substrates inogonesa GaN-on-SiC RF magetsi amplifiers, inotsigira high-frequency, high-power signal transmission.

Satellite Kukurukurirana: Yakaderera-kurasikirwa maitiro inoita kuti ive yakakodzera mamillimeter-wave zvishandiso.

3. Renewable Energy & Energy Storage

· Solar Power: SiC MOSFETs inosimudzira DC-AC shanduko inoshanda uku ichidzikisa mutengo wesystem.

· Energy Storage Systems (ESS): Inokwirisa bidirectional converters uye inowedzera hupenyu hwebhatiri.

4. Defense & Aerospace

· Radar Systems: High-simba SiC zvishandiso zvinoshandiswa muAESA (Active Electronically Scanned Array) radars.

· Spacecraft Power Management: Radiation-resistant SiC substrates yakakosha kune yakadzika-chadenga mishoni.

5. Tsvakurudzo & Emerging Technologies

Quantum Computing: Yakakwira-kuchena SiC inogonesa spin qubit kutsvagisa.

· High-Temperature Sensors: Yakaiswa muoiri yekuongorora uye yenyukireya reactor yekutarisa.

SiC Seed Substrates - XKH Services

1. Supply Chain Advantages

· Vertically yakabatanidzwa kugadzira: Kudzora kwakazara kubva kune yakakwira-kuchena SiC hupfu kusvika kune yakapedza wafers, kuve nechokwadi chekutungamira nguva dze4-6 mavhiki ezvakajairwa zvigadzirwa.

Kukwikwidzana kwemitengo: Hupfumi hwechiyero hunogonesa 15-20% mitengo yakaderera pane vanokwikwidza, nerutsigiro rweZvibvumirano Zvenguva Yakareba (LTAs).

2. Customization Services

Crystal orientation: 4H-SiC (yakajairwa) kana 6H-SiC (yakasarudzika maapplication).

· Doping optimization: Yakagadzirirwa N-mhando / P-mhando / semi-inodzivirira zvivakwa.

· Kupenya kwepamusoro: CMP kupenya uye epi-yakagadzirira pamusoro pekurapa (Ra <0.3 nm).

3. Technical Support

· Yemahara sampuli yekuyedza: Inosanganisira XRD, AFM, uye Hall maitiro ekuyera mishumo.

· Chishandiso simulation rubatsiro: Inotsigira epitaxial kukura uye mudziyo dhizaini optimization.

4. Kukurumidza Kupindura

· Yakaderera-vhoriyamu prototyping: Minimum odha yegumi mawafer, anounzwa mukati memavhiki matatu.

· Global Logistics: Kudyidzana neDHL neFedEx pakuendesa paimba neimba.

5. Kuvimbiswa Kwehutano

· Kuongorora kwakazara: Inovhara X-ray topography (XRT) uye defect density analysis.

Zvitupa zvepasi rose: Zvinoenderana neIATF 16949 (yemotokari-giredhi) uye AEC-Q101 zviyero.

Mhedziso

XKH's SiC seed substrates inopfuura mumhando yekristalline, kugadzikana kweketani, uye kugadzirisa kuchinjika, kushanda magetsi emagetsi, 5G kutaurirana, simba rinogoneka, uye tekinoroji yekudzivirira. Isu tinoenderera mberi nekusimudzira 8-inch SiC misa-yekugadzira tekinoroji kutyaira yechitatu-chizvarwa semiconductor indasitiri kumberi.

Zvakapfuura: SiC ceramic ndiro/tireyi ye4inch 6inch wafer holder yeICP

Zvinotevera: Yakagadzirirwa SiC Mbeu YeCrystal Substrates Dia 205/203/208 4H-N Rudzi rweOptical Communications