6inch SiC Epitaxiy wafer N / P mhando inogamuchirwa yakagadziridzwa

6inch SiC Epitaxiy wafer N/P mhando gamuchira customized Featured Image

Tsanangudzo Pfupi:

inopa 4, 6, 8 inch silicon carbide epitaxial wafer uye epitaxial foundry masevhisi, kugadzira (600V ~ 3300V) zvishandiso zvemagetsi zvinosanganisira SBD, JBS, PiN, MOSFET, JFET, BJT, GTO, IGBT zvichingodaro.

Tinogona Kupa 4-inch uye 6-inch SiC epitaxial wafers ekugadzirwa kwemagetsi emagetsi anosanganisira SBD JBS PiN MOSFET JFET BJT GTO & IGBT kubva 600V kusvika 3300V.

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Iyo nzira yekugadzirira yesilicon carbide epitaxial wafer inzira inoshandisa Chemical Vapor Deposition (CVD) tekinoroji. Aya anotevera ndiwo akakodzera tekinoroji misimboti uye matanho ekugadzirira maitiro:

Technical musimboti:

Kemikari Vapor Deposition: Uchishandisa iyo yakabikwa gasi muchikamu chegasi, pasi pemamiriro ekuita chaiwo, inosvibiswa uye inoiswa pane substrate kuti igadzire firimu raunoda.

Gasi-chikamu chekuita: Kuburikidza ne pyrolysis kana kupaza kuita, akasiyana siyana magasi emagetsi muchikamu chegasi anochinjwa kemikari mukamuri yekuita.

Matanho ekugadzirira:

Substrate kurapwa: Iyo substrate inoiswa pasi pekunatswa kwepamusoro uye pretreatment kuve nechokwadi chemhando uye crystallinity ye epitaxial wafer.

Reaction chamber debugging: gadzirisa tembiricha, kudzvanywa uye chiyero chekuyerera kwekamuri yekupindura uye mamwe ma paramita kuti ave nechokwadi chekugadzikana uye kutonga kwemamiriro ekuita.

Raw material supply: ipa inodiwa gasi zviwanikwa mukamuri yekupindura, kusanganisa uye kudzora kuyerera sezvinodiwa.

Maitiro ekuita: Nekudziisa kamuri rekuita, gasi rekudya rinopinda kemikari mukamuri kuti ribudise dhipoziti yaunoda, kureva silicon carbide firimu.

Kutonhodza uye kuburitsa: Pakupera kwekuita, tembiricha inodzikiswa zvishoma nezvishoma kuti itonhore uye kuomesa madhipoziti mukamuri yekupindura.

Epitaxial wafer annealing uye post-processing: iyo yakaiswa epitaxial wafer inonamirwa uye mushure-yakagadziriswa kuti ivandudze ayo magetsi uye optical maitiro.

Iwo chaiwo matanho uye mamiriro esilicon carbide epitaxial wafer kugadzirira maitiro anogona kusiyana zvichienderana nechaiyo midziyo uye zvinodiwa. Izvo zviri pamusoro ingori general process kuyerera uye musimboti, iyo chaiyo mashandiro inoda kugadziridzwa uye kugadziridzwa zvinoenderana nemamiriro chaiwo.