6inch HPSI SiC substrate wafer Silicon Carbide Semi-kutuka SiC wafers
PVT Silicon Carbide Rakanaka SiC Kukura Technology
Irizvino nzira dzekukura dzeSiC single crystal inonyanya kusanganisira idzi nhatu dzinotevera: nzira yemvura, tembiricha yepamusoro yemakemikari vapor deposition nzira, uye yemuviri mhute chikamu chekufambisa (PVT) nzira. Pakati pavo, iyo PVT nzira ndiyo yakanyanya kutsvagirwa uye yakakura tekinoroji yeSiC single crystal kukura, uye matambudziko ayo ehunyanzvi ndeaya:
(1) SiC imwe kristaro mutembiricha yepamusoro ye2300 ° C pamusoro peiyo yakavharwa graphite kamuri kuti ipedze "yakasimba - gasi - yakasimba" kutendeuka recrystallisation maitiro, kukura kutenderera kwakareba, kwakaoma kudzora, uye kunowanzo kune microtubules, inclusions uye humwe hurema.
(2) Silicon carbide single crystal, inosanganisira anopfuura mazana maviri emhando dzekristaro dzakasiyana, asi kugadzirwa kwemhando imwe chete yekristaro, iri nyore kuburitsa shanduko yemhando yekristaro mukukura kunokonzeresa kukanganisa kwemhando dzakasiyana-siyana, gadziriro yegadziriro yemhando imwe chete yekristaro yakaoma kudzora kugadzikana kweiyo nzira, semuenzaniso, iyo iripo huru yemhando ye4H.
(3) Silicon carbide single crystal growth thermal field kune tembiricha gradient, zvichiita kuti kristaro kukura muitiro pane chizvarwa mukati kushushikana uye kunoguma dislocations, zvikanganiso uye zvimwe kukanganisa kunokonzerwa.
(4) Silicon carbide single crystal growth process inoda kunyatso kudzora kuiswa kwekunze kusvibiswa, kuitira kuti uwane yakanyanya kuchena semi-insulating crystal kana directionally doped conductive crystal. Kune iyo semi-insulating silicon carbide substrates inoshandiswa muRF zvishandiso, zvivakwa zvemagetsi zvinofanirwa kuwanikwa nekudzora yakanyanya kuderera kusachena uye mamwe marudzi ehurema hwemapoinzi mukristaro.
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