6inch HPSI SiC substrate wafer Silicon Carbide Semi-kutuka SiC wafers

Irizvino nzira dzekukura dzeSiC single crystal inonyanya kusanganisira idzi nhatu dzinotevera: nzira yemvura, tembiricha yepamusoro yemakemikari vapor deposition nzira, uye yemuviri mhute chikamu chekufambisa (PVT) nzira. Pakati pavo, iyo PVT nzira ndiyo yakanyanya kutsvagirwa uye yakakura tekinoroji yeSiC single crystal kukura, uye matambudziko ayo ehunyanzvi ndeaya:

(1) SiC single crystal mukupisa kwakanyanya kwe2300 ° C pamusoro peiyo yakavharwa graphite kamuri kuti ipedze iyo "yakasimba - gasi - yakasimba" yekushandura recrystallization maitiro, kutenderera kwekukura kwakareba, kwakaoma kudzora, uye kunowanzo kune microtubules, inclusions uye. kumwe kukanganisa.

(2) Silicon carbide single crystal, inosanganisira anopfuura mazana maviri emhando dzekristaro dzakasiyana, asi kugadzirwa kwemhando imwe chete yekristaro, iri nyore kugadzira shanduko yemhando yekristaro mukukura kunokonzeresa kukanganisa kwemhando dzakasiyana-siyana, maitiro ekugadzirira kweimwe chete. chaiyo yekristaro mhando yakaoma kudzora kugadzikana kweiyo nzira, semuenzaniso, iyo iripo huru ye4H-mhando.

(3) Silicon carbide single crystal growth thermal field kune tembiricha gradient, zvichiita kuti kristaro kukura muitiro pane chizvarwa mukati kushushikana uye kunoguma dislocations, zvikanganiso uye zvimwe kukanganisa kunokonzerwa.

(4) Silicon carbide single crystal growth process inoda kunyatso kudzora kuiswa kwekunze kusvibiswa, kuitira kuti uwane yakanyanya kuchena semi-insulating crystal kana directionally doped conductive crystal. Kune iyo semi-insulating silicon carbide substrates inoshandiswa muRF zvishandiso, zvivakwa zvemagetsi zvinofanirwa kuwanikwa nekudzora yakanyanya kuderera kusachena uye mamwe marudzi ehurema hwemapoinzi mukristaro.