6inch HPSI SiC substrate wafer Silicon Carbide Mawafer eSiC anonyadzisa zvishoma
PVT Silicon Carbide Crystal SiC Kukura Tekinoroji
Nzira dziri kushandiswa pari zvino dzeSiC single crystal dzinosanganisira nhatu dzinotevera: liquid phase method, high temperature chemical vapour deposition method, uye physical vapour phase transport (PVT). Pakati padzo, nzira yePVT ndiyo tekinoroji yakanyanya kutsvakurudzwa uye yakakura yekukura kweSiC single crystal, uye matambudziko ayo ehunyanzvi ndeaya:
(1) SiC kristaro imwe chete pakupisa kwakanyanya kwe2300 ° C pamusoro pekamuri regrafiti rakavharwa kuti ipedzise maitiro ekushandura "solid - gas - solid" recrystallization, kutenderera kwekukura kwakareba, kwakaoma kudzora, uye kunowanzobatwa nema microtubules, inclusions nezvimwe zvikanganiso.
(2) Silicon carbide kristaro imwe chete, kusanganisira marudzi anopfuura 200 akasiyana ekristaro, asi kugadzirwa kwemhando imwe chete yekristaro, zviri nyore kugadzira shanduko yemhando yekristaro mukukura kwayo zvichikonzera zvikanganiso zvemhando dzakasiyana-siyana, kugadzirira kwemhando imwe chete yekristaro kwakaoma kudzora kugadzikana kwemaitiro acho, semuenzaniso, huwandu hwazvino hwemhando ye4H.
(3) Munda wekupisa weSilicon carbide une mwero wekupisa, zvichikonzera kukura kwekristaro, pane kushushikana kwemukati uye zvikanganiso, zvikanganiso nezvimwe zvikanganiso zvinokonzerwa.
(4) Maitiro ekukura kwesilicon carbide single crystal anofanirwa kudzora zvakanyanya kusviba kwekunze, kuitira kuti pave nekristaro yakacheneswa zvakanyanya kana kuti kristaro inofambisa mvura yakananga. Kune silicon carbide substrates dzinoshandisa semi-insulating muRF devices, hunhu hwemagetsi hunofanirwa kuwanikwa nekudzora huwandu hwakaderera hwekusviba uye mhando dzakasiyana dzezvikanganiso zvemapoinzi mukristaro.
Dhayagiramu Yakadzama
