6 Inch Conductive SiC Composite Substrate 4H Diameter 150mm Ra≤0.2nm Warp≤35μm

Tsanangudzo Pfupi

Inotungamirwa neiyo semiconductor indasitiri yekutsvaga kuita kwepamusoro uye mutengo wakaderera, iyo 6-inch conductive SiC composite substrate yabuda. Kuburikidza nehunyanzvi hwekuita tekinoroji inoumbwa tekinoroji, iyi 6-inch wafer inowana makumi masere neshanu muzana ekuita kwechinyakare 8-inch wafers ichingodhura makumi matanhatu muzana chete. Midziyo yemagetsi mumashandisirwo emazuva ese senge zviteshi zvitsva zvemagetsi ekuchaja, 5G base station power modules, uye nyangwe madhiraivha-frequency madhiraivha mumidziyo yepamba yepamusoro anogona kunge ari kutoshandisa ma substrates erudzi urwu. Yedu ine patented multi-layer epitaxial kukura tekinoroji inogonesa atomic-level flat composite interfaces paSiC base, ine interface state density pazasi 1 × 10¹¹/cm²·eV - chirevo chasvika mazinga anotungamira pasi rose.

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Product Detail

Product Tags

Technical parameters

Items	Kugadzirwagiredhi	Dummygiredhi
Diameter	6-8 padiki	6-8 padiki
Ukobvu	350/500±25.0 μm	350/500±25.0 μm
Polytype	4H	4H
Resistivity	0.015-0.025 ohm·cm	0.015-0.025 ohm·cm
TTV	≤5 μm	≤20 μm
Warp	≤35 μm	≤55 μm
Mberi (Si-face) hukasha	Ra≤0.2 nm (5μm×5μm)	Ra≤0.2 nm (5μm×5μm)

Key Features

1.Cost Advantage: Yedu 6-inch conductive SiC composite substrate inoshandisa proprietary "graded buffer layer" tekinoroji inokwenenzvera kuumbwa kwezvinhu kuderedza mari yemidziyo ne38% uku ichichengetedza kuita kwakanakisa kwemagetsi. Zviyero chaizvo zvinoratidza kuti 650V MOSFET zvishandiso zvinoshandisa iyi substrate inowana kudzikiswa kwe42% mumutengo pachikamu chimwe chete zvichienzaniswa neyakajairwa mhinduro, iyo yakakosha mukusimudzira kutorwa kweSiC mumagetsi evatengi.
2.Excellent Conductive Properties: Kuburikidza nemaitiro chaiwo e nitrogen doping control, yedu 6-inch conductive SiC composite substrate inowana ultra-low resistivity ye 0.012-0.022Ω · cm, nekusiyana kunodzorwa mukati ± 5%. Zvinonyanya kukosha, isu tinochengetedza resistivity kufanana kunyangwe mukati meiyo 5mm kumucheto dunhu rewaferi, kugadzirisa yakamira-yakareba kumucheto mhedzisiro dambudziko muindasitiri.
3.Thermal Performance: A 1200V / 50A module yakagadzirwa uchishandisa substrate yedu inoratidza chete 45 ℃ junction tembiricha inokwira pamusoro pe ambient pakuzara kwekutakura - 65 ℃ yakaderera pane inofananidzwa nesilicon-based devices. Izvi zvinogoneswa neyedu "3D thermal chiteshi" chimiro chakaumbwa chinovandudza lateral thermal conductivity kusvika 380W/m·K uye vertical thermal conductivity kusvika 290W/m·K.
4.Process Compatibility: Nokuda kwechimiro chakasiyana-siyana che6-inch conductive SiC composite substrates, takagadzira matching stealth laser dicing process inosvika 200mm / s yekucheka kukurumidza paunenge uchidzora kumucheto chipping pazasi 0.3μm. Pamusoro pezvo, isu tinopa pre-nickel-plated substrate sarudzo dzinogonesa yakananga kufa bonding, kuchengetedza vatengi matanho maviri ekuita.

Main Applications

Yakakosha Smart Grid Equipment:

Mune ekupedzisira-yakakwira voltage yakananga ikozvino (UHVDC) masisitimu ekufambisa anoshanda pa ± 800kV, zvishandiso zveIGCT zvinoshandisa yedu 6-inch conductive SiC composite substrates inoratidza kusimudzira kunoshamisa kwekuita. Midziyo iyi inowana 55% kudzikiswa kwekuchinja kurasikirwa panguva yekufambisa, uku ichiwedzera mashandiro ehurongwa hwese kudarika 99.2%. Iyo substrates' yepamusoro yekupisa yekupisa (380W/m·K) inogonesa compact converter dhizaini inoderedza substation tsoka ne25% zvichienzaniswa neyakajairwa silicon-based mhinduro.

New Energy Vehicle Powertrains:

Iyo drive system inosanganisira yedu 6-inch conductive SiC composite substrates inowana isati yamboitika inverter simba density ye45kW/L - 60% kuvandudza pane yavo yapfuura 400V silicon-based dhizaini. Zvinotonyanya kushamisa, sisitimu inochengetedza 98% kushanda zvakanaka mukati mese tembiricha yekushanda kubva -40 ℃ kusvika +175 ℃, kugadzirisa matambudziko ekuita kwechando-yemamiriro ekunze ayo akanetsa kutorwa kweEV munzvimbo dzekuchamhembe. Kuyedzwa kwepasirese kunoratidza kuwedzera kwe7.5% mumwaka wechando kune mota dzakashongedzerwa neiyi tekinoroji.

Industrial Variable Frequency Drives:

Kugamuchirwa kwema substrates edu mune akangwara simba modules (IPMs) yeindasitiri servo masisitimu iri kushandura kugadzira otomatiki. MuCNC machining nzvimbo, ma modules aya anoburitsa makumi mana muzana nekukurumidza mota mhinduro (kuderedza kukwidziridza nguva kubva pa50ms kusvika 30ms) uku uchicheka ruzha rwemagetsi ne15dB kusvika 65dB (A).

Consumer Electronics:

Shanduko yemagetsi evatengi inoenderera mberi nemasubstrates edu achigonesa chizvarwa chinotevera 65W GaN inokurumidza majaja. Aya ma compact power adapter anowana 30% kudzikisa vhoriyamu (kudzika kusvika 45cm³) uku ichichengetedza kuzara kwemagetsi, nekuda kwehukuru hwekuchinja hunhu hweSiC-based dhizaini. Kufungidzira kwekupisa kunoratidza tembiricha yepamusoro ye68 ° C panguva yekuenderera mberi kwekushanda - 22 ° C inotonhorera pane yakajairwa dhizaini - inovandudza zvakanyanya hupenyu hwechigadzirwa uye kuchengetedzeka.

XKH Customization Services

XKH inopa yakakwana yekugadziridza tsigiro ye6-inch conductive SiC composite substrates:

Hukobvu Customization: Sarudzo dzinosanganisira 200μm, 300μm, uye 350μm zvakatemwa
2. Resistivity Control: Inogadziriswa n-type doping concentration kubva 1×10¹⁸ kusvika 5×10¹⁸ cm⁻³

3. Crystal Orientation: Kutsigira kwemaitiro akawanda kusanganisira (0001) off-axis 4 ° kana 8 °

4. Testing Services: Zadzisa wafer-level parameter test mishumo

Yedu yazvino yekutungamira nguva kubva kune prototyping kusvika mukugadzirwa kwakawanda inogona kunge ipfupi semavhiki masere. Kune vatengi vane hunyanzvi, isu tinopa yakatsaurirwa maitiro ekuvandudza masevhisi kuti ive nechokwadi chekuenderana nezvinodiwa zvechishandiso.