6 Inch 4H SEMI Rudzi rweSiC inoumba substrate Hukobvu 500μm TTV≤5μm MOS giredhi

6 Inch 4H SEMI Type SiC composite substrate Ukobvu 500μm TTV≤5μm MOS giredhi Featured Image

Tsanangudzo Pfupi

Nekukurumidza kufambira mberi kwe5G yekutaurirana uye tekinoroji yeradar, iyo 6-inch semi-insulating SiC composite substrate yave chinhu chakakosha pakugadzira-frequency mudziyo wekugadzira. Zvichienzaniswa netsika dzeGaAs substrates, iyi substrate inochengetedza yakakwirira resistivity (> 10⁸ Ω·cm) apo ichivandudza kupisa kwemhepo neanopfuura 5x, zvinobudirira kugadzirisa matambudziko ekupisa kupisa mumamirimita-wave zvishandiso. Iwo magetsi amplifiers mukati mezvishandiso zvemazuva ese se5G smartphones uye setiraiti yekutaurirana zviteshi zvinogona kunge zvakavakwa pane iyi substrate. Tichishandisa tekinoroji yedu ye “buffer layer doping compensation”, takadzikisa density yemicropipe kusvika pazasi 0.5/cm² uye takawana kurasikirwa kwe microwave kwe0.05 dB/mm.

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Product Detail

Product Tags

Technical parameters

Items	Tsanangudzo	Items	Tsanangudzo
Diameter	150±0.2 mm	Mberi (Si-face) hukasha	Ra≤0.2 nm (5μm×5μm)
Polytype	4H	Edge Chip, Scratch, Crack (kutarisa kwekuona)	Hapana
Resistivity	≥1E8 Ω·cm	TTV	≤5 μm
Kutamisa layer Hukobvu	≥0.4 μm	Warp	≤35 μm
Hapana (2mm>D>0.5mm)	≤5 ea/Wafer	Ukobvu	500±25 μm

Key Features

1. Inoshamisa Yepamusoro-Frequency Performance
Iyo 6-inch semi-insulating SiC composite substrate inoshandisa giredhi dielectric layer dhizaini, kuve nechokwadi chekuti dielectric inogara ichisiyana ye <2% muKa-band (26.5-40 GHz) uye kuvandudza chikamu chisingachinji ne40%. 15% kuwedzera mukubudirira uye 20% yakaderera simba rekushandisa muT / R modules uchishandisa iyi substrate.

2. Breakthrough Thermal Management
Yakasarudzika "thermal bridge" inoumbwa chimiro inogonesa lateral thermal conductivity ye400 W/m·K. Mu 28 GHz 5G base station PA modules, tembiricha yejunction inokwira ne28 ° C chete mushure memaawa makumi maviri nemana ekuenderera mberi kwekushanda-50 ° C yakaderera pane yakajairwa mhinduro.

3. Superior Wafer Quality
Kuburikidza neyakagadziridzwa Physical Vapor Transport (PVT) nzira, tinowana dislocation density <500/cm² uye Total Thickness Variation (TTV) <3 μm.
4. Manufacturing-Hushamwari Processing
Yedu laser annealing process yakanyatso kugadzirirwa iyo 6-inch semi-insulating SiC composite substrate inodzikisa pasi density nemirairo miviri yehukuru pamberi pe epitaxy.

Main Applications

1. 5G Base Station Core Zvikamu
MuMassive MIMO antenna arrays, GaN HEMT zvishandiso pa6-inch semi-insulating SiC composite substrates inowana 200W yekubuda simba uye> 65% kunyatsoita. Miedzo yemunda pa 3.5 GHz yakaratidza kuwedzera kwe30% mukuvhara radius.

2. Satellite Communication Systems
Low-Earth orbit (LEO) satellite transceivers vachishandisa iyi substrate inoratidza 8 dB yepamusoro EIRP muQ-band (40 GHz) ichidzikisa huremu ne40%. SpaceX Starlink terminals vakaitora kuti igadzire hukuru.

3. Military Radar Systems
Phased-array radar T/R modules pane iyi substrate inosvika 6-18 GHz bandwidth uye ruzha nhamba yakadzikira se1.2 dB, ichiwedzera chiyero chekuonekwa ne50 km mukutanga-yambiro radar masisitimu.

4. Automotive Millimeter-Wave Radar
79 GHz mota radar machipisi uchishandisa iyi substrate inovandudza angular resolution kusvika 0.5 °, ichisangana neL4 inozvimiririra yekutyaira zvinodiwa.

Isu tinopa yakazara yakagadziriswa sevhisi mhinduro ye6-inch semi-insulating SiC composite substrates. Panyaya yekugadzirisa maparamendi, isu tinotsigira chaiyo mutemo weresistive mukati meiyo 10⁶-10¹⁰ Ω·cm. Kunyanya zvekushandisa zvechiuto, tinogona kupa yakanyanya-yepamusoro kuramba sarudzo ye>10⁹ Ω·cm. Inopa matatu ukobvu kutsanangurwa kwe200μm, 350μm uye 500μm panguva imwe chete, nekushivirira kwakanyatso kudzorwa mukati me ± 10μm, kusangana nezvinodiwa zvakasiyana kubva kune yakakwira-frequency zvishandiso kusvika kune yakakwirira-simba maapplication.

Panyaya yemaitiro ekurapa kwepamusoro, tinopa mhinduro mbiri dzehunyanzvi: Chemical Mechanical Polishing (CMP) inogona kuwana atomic-level surface flatness neRa<0.15nm, kusangana nezvinodiwa zvakanyanya epitaxial kukura zvinodiwa; Iyo epitaxial yakagadzirira pamusoro pekurapa tekinoroji yekukurumidza kugadzirwa zvinodiwa inogona kupa ekupedzisira-yakatsetseka nzvimbo ine Sq<0.3nm uye yakasara oxide ukobvu <1nm, ichirerutsa maitiro ekutanga ekurapa pakupedzisira kwemutengi.

XKH inopa yakakwana yakagadziridzwa mhinduro ye6-inch semi-insulating SiC composite substrates.

1. Material Parameter Customization
Isu tinopa chaiyo resistivity tuning mukati mechikamu che10⁶-10¹⁰ Ω·cm, iine nyanzvi dzepamusoro-soro dzekudzivirira sarudzo >10⁹ Ω·cm inowanika kumauto/muchadenga maapplication.

2. Makobvu Specifications
Zvitatu zvakajairwa ukobvu sarudzo:

200μm (yakagadziridzwa kune yakakwira-frequency zvishandiso)

350μm (yakajairwa yakatarwa)

500μm (yakagadzirirwa kushandiswa kwesimba repamusoro)
+ Ese akasiyana anochengetedza kushivirira kwakasimba kwe ± 10μm.

3. Surface Treatment Technologies

Chemical Mechanical Polishing (CMP): Inowana atomic-level surface flatness neRa <0.15nm, inosangana neyakaomesesa epitaxial kukura zvinodiwa zveRF nemagetsi zvishandiso.

4. Epi-Ready Surface Processing

· Inoburitsa nzvimbo dzakapfava dzine Sq <0.3nm roughness

· Inodzora ukobvu hweiyo oxide kusvika <1nm

· Inobvisa anosvika matatu ekutanga kugadzirisa matanho panzvimbo yevatengi