6 Inch 4H SEMI Type SiC composite substrate Ukobvu 500μm TTV≤5μm MOS grade

Tsananguro pfupi:

Nekufambira mberi nekukurumidza kwe5G communications uye radar technology, 6-inch semi-insulating SiC composite substrate yave chinhu chikuru chekugadzira michina ine mafrequency akawanda. Kana tichienzanisa neGaAs substrates dzechinyakare, substrate iyi inochengetedza resistivity yakakwira (>10⁸Ω·cm) uku ichivandudza thermal conductivity nekanopfuura ka5, zvichigadzirisa zvinobudirira matambudziko ekupisa mumidziyo ine ma millimeter-wave. Mapower amplifiers ari mumidziyo yemazuva ese senge 5G smartphones nema satellite communication terminals angangodaro akavakirwa pa substrate iyi. Tichishandisa tekinoroji yedu ye "buffer layer doping compensation", takaderedza micropipe density kusvika pasi pe0.5/cm² uye takawana kurasikirwa kwakanyanya kwe microwave kwe0.05 dB/mm.

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Zvinhu zvirimo

Magadzirirwo ehunyanzvi

Zvinhu	Tsanangudzo	Zvinhu	Tsanangudzo
Dhayamita	150±0.2 mm	Kukombama kwepamberi (Si-face)	Ra≤0.2 nm (5μm×5μm)
Mhando yePolytype	4H	Chip yeEdge, Kukwenya, Kutsemuka (kutarisa nemaziso)	Hapana
Kuramba	≥1E8 Ω·cm	TTV	≤5 μm
Ukobvu hwechitamisiro	≥0.4 μm	Kukombama	≤35 μm
Isina chinhu (2mm>D>0.5mm)	≤5 imwe/Wafer	Ukobvu	500±25 μm

Zvinhu Zvikuru

1. Kushanda Kwakanaka Kwazvo Kwakawanda
Substrate ine 6-inch semi-insulating SiC composite inoshandisa dhizaini ye dielectric layer yakarongwa, ichivimbisa shanduko yenguva dzose ye dielectric ye <2% muKa-band (26.5-40 GHz) uye inovandudza kugadzikana kwechikamu ne40%. Kuwedzera kwe15% mukushanda uye kushandiswa kwesimba kwakaderera ne20% mumamodule eT/R achishandisa substrate iyi.

2. Kubudirira kweKutarisira Kupisa
Chimiro chakasiyana che "thermal bridge" chinogonesa kufambisa kupisa kwemativi e400 W/m·K. Mu28 GHz 5G base station PA modules, tembiricha yejunction inokwira ne28°C chete mushure memaawa makumi maviri nemana ekushanda nguva dzose—50°C yakaderera pane mhinduro dzemazuva ese.

3. Hunhu hwepamusoro hweWafer
Kuburikidza nenzira yakagadziriswa yePhysical Vapor Transport (PVT), tinowana dislocation density <500/cm² uye Total Thickness Variation (TTV) <3 μm.
4. Kugadzira Zviri Nyore Mukugadzira
Maitiro edu ekuisa laser annealing akagadzirirwa zvakananga substrate yeSiC composite ine 6-inch semi-insulating anoderedza density yenzvimbo yepamusoro nematanho maviri ehukuru epitaxy isati yasvika.

Zvikumbiro Zvikuru

1. Zvikamu zvepakati zve5G Base Station
MuMassive MIMO antenna arrays, zvishandiso zveGaN HEMT zviri pa6-inch semi-insulating SiC composite substrates zvinowana simba rekuburitsa re200W uye kushanda zvakanaka kwe >65%. Miedzo yemumunda pa3.5 GHz yakaratidza kuwedzera kwe30% mu coverage radius.

2. Masisitimu Ekutaurirana Nemasaiti
Matransceiver esatellite eLow-Earth orbit (LEO) anoshandisa substrate iyi anoratidza EIRP yakakwira ne8 dB muQ-band (40 GHz) ukuwo achideredza huremu ne40%. SpaceX Starlink terminals dzakashandisa iyi satellite kuti ishandiswe mukugadzirwa kwezvinhu zvakawanda.

3. Masisitimu eRadar eMasoja
Mamodule eT/R eradar ane phased-array ari pachikamu ichi anosvika pa6-18 GHz bandwidth uye nhamba yeruzha yakaderera kusvika ku1.2 dB, zvichiita kuti ruzivo rwese ruonekwe ne50 km mumasisitimu eradar ekunyevera nekukurumidza.

4. Radar yeMotokari yeMillimeter-Wave
Machipisi e79 GHz emota anoshandisa substrate iyi anovandudza kugona kwekona kusvika pa0.5°, zvichizadzisa zvinodiwa neL4 automated driving.

Tinopa mhinduro yakakwana yebasa rakagadziriswa re6-inch semi-insulating SiC composite substrates. Panyaya yekugadzirisa maparameter ezvinhu, tinotsigira kudzora kwakaringana kweresistivity mukati me10⁶-10¹⁰ Ω·cm. Kunyanya kumashandisirwo emauto, tinogona kupa sarudzo yeresistivity yakanyanya-yakakwirira ye >10⁹ Ω·cm. Inopa zvirevo zvitatu zvekukora kwe200μm, 350μm uye 500μm panguva imwe chete, nekushivirira kuchidzorwa zvakanyanya mukati me±10μm, zvichisangana nezvinodiwa zvakasiyana kubva kumidziyo ine frequency yakakwira kusvika kumashandisirwo ane simba rakawanda.

Panyaya yekurapa pamusoro, tinopa mhinduro mbiri dzehunyanzvi: Chemical Mechanical Polishing (CMP) inogona kuita kuti pamusoro pave neatomu-level flatness neRa<0.15nm, zvichizadzisa zvinodiwa zvakanyanya pakukura kwe epitaxial; Tekinoroji yekurapa pamusoro yakagadzirira epitaxial yekukurumidza kugadzirwa inogona kupa nzvimbo dzakapfava kwazvo dzine Sq<0.3nm uye residual oxide thickness <1nm, zvichiita kuti zvive nyore kugadzirisa usati watanga kurapwa.

XKH inopa mhinduro dzakagadzirwa dzakagadzirirwa 6-inch semi-insulating SiC composite substrates

1. Kugadzirisa Paramita Yezvinhu
Tinopa nzira chaiyo yekudzivirira kuputika kwemhepo mukati me10⁶-10¹⁰ Ω·cm, nesarudzo dzepamusoro dzekudzivirira kuputika kwemhepo >10⁹ Ω·cm dziripo dzekushandisa mumauto/mudenga.

2. Hukobvu Magadzirirwo
Sarudzo nhatu dzakajairwa dzekukora:

· 200μm (yakagadzirirwa zvishandiso zvine frequency yakakwira)

· 350μm (zvinotsanangurwa zvakajairika)

· 500μm (yakagadzirirwa kushandiswa nesimba guru)
· Mhando dzese dzinochengetedza ukobvu hwakasimba hwe ±10μm.

3. Tekinoroji yeKurapa Pamusoro

Kupukuta Kwemakemikari (CMP): Kunoita kuti pamusoro payo pave nehupamhi hweatomu hwakatsetseka neRa<0.15nm, zvichizadzisa zvinodiwa zvakanyanya zvekukura kweRF nemidziyo yemagetsi.

4. Kugadziriswa kweEpi-Ready Surface

· Inopa nzvimbo dzakapfava zvikuru dzine hukasha hweSq<0.3nm

· Inodzora ukobvu hwe oxide yemuno kusvika <1nm

· Inobvisa matanho matatu ekutanga kugadziriswa panzvimbo dzevatengi