6 muSilicon Carbide 4H-SiC Semi-Insulating Ingot, Dummy Grade

Tsananguro pfupi:

Silicon Carbide (SiC) iri kuchinja indasitiri yesemiconductor, kunyanya mukushandiswa kwesimba guru, mafrequency akawanda, uye kusingapindi mwaranzi. Iyo ingot ye6-inch 4H-SiC semi-insulating, inowanikwa mudummy grade, chinhu chakakosha pakugadzira, kutsvagisa, uye kugadzirisa maitiro. Iine bandgap yakakura, thermal conductivity yakanaka, uye kusimba kwemakanika, iyi ingot inoshanda sesarudzo inodhura zvishoma yekuyedza nekugadzirisa maitiro pasina kukanganisa hunhu hwakakosha hunodiwa pakuvandudza kwepamusoro. Chigadzirwa ichi chinoshanda kune akasiyana mashandisirwo, anosanganisira magetsi emagetsi, zvishandiso zveredhiyo-frequency (RF), uye optoelectronics, zvichiita kuti ive chishandiso chakakosha kumaindasitiri nemasangano ekutsvagisa.


Zvinhu zvirimo

Zvivakwa

1. Hunhu hweMuviri neMaumbirwo
●Rudzi rwezvinhu: Silicon Carbide (SiC)
●Polytype: 4H-SiC, chimiro chekristaro chehexagonal
●Dhayamita: 150 mm (150 inches)
●Kukora: Kunogadziriswa (5-15 mm zvakajairika kune giredhi remhando yepamusoro)
●Kutarisa kwekristaro:
oPrimary: [0001] (C-plane)
oSarudzo dzechipiri: Off-axis 4° yekukura kwakanaka kwe epitaxial
●Kutarisa Kwakatsetseka Kwekutanga: (10-10) ± 5°
●Kutarisa kwechipiri kwakatwasuka: 90° kubva pafurati rekutanga ± 5°

2. Zvivakwa zveMagetsi
●Kusagona Kuramba:
oSemi-insulating (>106^66 Ω·cm), yakakodzera kuderedza kugona kwezvipembenene.
●Rudzi rwekushandisa zvinodhaka:
o Yakaiswa dope isina kurongeka, zvichikonzera kusimba kwakanyanya kwemagetsi uye kugadzikana mumamiriro akasiyana-siyana ekushanda.

3. Zvimiro zvekupisa
●Kufambisa kwekupisa: 3.5-4.9 W/cm·K, zvichiita kuti kupisa kuparadzwe zvakanaka mumasisitimu ane simba guru.
●Kuwedzera kweThermal Coefficient: 4.2×10−64.2 \times 10^{-6}4.2×10−6/K, zvichiita kuti pave nekugadzikana kwezvikamu panguva yekugadzirisa tembiricha yepamusoro.

4. Zvimiro zveOptical
●Bandgap: Bandgap yakafara ye3.26 eV, ichibvumira kushanda pasi pemagetsi akakwira uye tembiricha.
●Kujeka: Kujeka kwakanyanya kuUV uye marefu emvura anoonekwa, zvinobatsira pakuongorora maoptoelectronic.

5. Zvimiro zveMichina
●Kuoma: Chikero cheMohs 9, chiri chechipiri pane dhaimani, chinoita kuti chigare kwenguva refu panguva yekugadzirisa.
●Kuwanda Kwezvikanganiso:
o Inodzorwa kuti isakanganise macro error, zvichiita kuti ive yemhando yepamusoro kune ma dummy-grade applications.
●Kuti sandara: Kufanana nekutsauka

Paramita

Zvidimbu

Chikamu

Giredhi Giredhi reDummy  
Dhayamita 150.0 ± 0.5 mm
Kudzidziswa kweWafer Zviri padivi: <0001> ± 0.5° dhigirii
Kuramba kweMagetsi > 1E5 Ω·cm
Kutungamira Kwakatsetseka Kwepakutanga {10-10} ± 5.0° dhigirii
Hurefu Hwepamusoro-soro Notch  
Kutsemuka (Kuongororwa kweChiedza Chakanyanya Kusimba) < 3 mm mu radial mm
Maplate eHex (Kuongororwa kweChiedza Chakanyanya) Nzvimbo yakaunganidzwa ≤ 5% %
Nzvimbo dzePolytype (Kuongororwa kweChiedza Chakanyanya) Nzvimbo yakaunganidzwa ≤ 10% %
Kuwanda kwepombi dze micropombi < 50 cm−2^-2−2
Kucheka kweEdge 3 dzinobvumirwa, imwe neimwe ≤ 3 mm mm
Cherechedza Ukobvu hwewafer yekucheka < 1 mm, > 70% (kunze kwekunge paine mativi maviri) inosangana nezvinodiwa pamusoro apa  

Mashandisirwo

1. Kugadzira uye Kutsvaga
Iyo ingot yemhando yepamusoro ye6-inch 4H-SiC ingot inonyatsokodzera kugadzira mifananidzo nekutsvaga, zvichibvumira vagadziri nema laboratories kuti:
●Edza ma parameter ekuita muChemical Vapor Deposition (CVD) kana Physical Vapor Deposition (PVD).
● Gadzira uye gadzirisa matekiniki ekucheka, kupukuta, uye kucheka mawafer.
●Ongorora magadzirirwo matsva emidziyo usati wachinja kuita zvinhu zvemhando yepamusoro.

2. Kuenzanisa uye Kuedza Mudziyo
Zvimiro zve semi-insulation zvinoita kuti ingot iyi ive yakakosha kune:
●Kuongorora nekugadzirisa hunhu hwemagetsi hwemidziyo ine simba guru uye ine mafrequency akawanda.
●Kutevedzera mamiriro ekushanda kweMOSFET, IGBTs, kana madiode munzvimbo dzekuyedza.
●Inoshanda senzira inotsiva zvinhu zvine hutsanana hwakanyanya pakukura kwezvirimwa panguva yekukura kwezvirimwa.

3. Magetsi Emagetsi
Kufambiswa kwemhepo kwakanyanya uye hunhu hwe4H-SiC hunoita kuti magetsi ashande zvakanaka mumagetsi emagetsi, kusanganisira:
●Magetsi ane simba guru.
●Ma inverter emotokari yemagetsi (EV).
●Sisitimu dzesimba dzinogona kudzokororwa, dzakadai semagetsi anochinja simba rezuva nematurbine emhepo.

4. Mashandisirwo eRadio Frequency (RF)
Kurasikirwa kwakaderera kwe dielectric ye4H-SiC uye kufamba kwema electron akawanda kunoita kuti ikodzere:
●RF amplifiers uye transistors muzvivakwa zvekutaurirana.
●Masisitimu eradar ane mafrequency akakwirira ekushandisa mundege nekudzivirira.
●Zvikamu zve network isina waya zve tekinoroji itsva ye5G.

5. Zvishandiso Zvinodzivirira Mwaranzi
Nekuda kwekusadzivirira kwayo zvikanganiso zvinokonzerwa nemwaranzi, semi-insulation 4H-SiC yakanakira:
●Midziyo yekutsvaga muchadenga, kusanganisira magetsi esatellite uye masisitimu emagetsi.
●Magetsi akaomeswa nemwaranzi ekutarisa nekudzora nyukireya.
●Zvishandiso zvekudzivirira zvinoda kusimba munzvimbo dzakaoma.

6. Zvemagetsi zveOptoelectronics
Kujeka kwemaziso uye nzvimbo yakakura ye4H-SiC inobvumira kushandiswa kwayo mu:
●Zvishandiso zvekuongorora UV uye ma LED ane simba guru.
●Kuedza machira ekuona uye kurapwa pamusoro.
●Kugadzira zvikamu zve optical zve sensors dzepamusoro.

Mabhenefiti eDummy-Grade Material

Kushanda Nemutengo Wakanaka:
Giredhi remhando yepamusoro inzira inodhura zvishoma pane yekutsvagisa kana yekugadzira zvinhu, zvichiita kuti ive yakakodzera kuongororwa nguva dzose uye kugadziriswa kwemaitiro.

Kugadziriswa kwezvishandiso:
Zviyero zvinogadziriswa uye magadzirirwo ekristaro zvinovimbisa kuti zvinoenderana nemhando dzakasiyana dzemashandisirwo.

Kukwanisa kukura:
Dhayamita yacho ine masendimita matanhatu inoenderana nezvinodiwa neindasitiri, zvichibvumira kukura kwakasununguka kune maitiro ekugadzira.

Kusimba:
Simba guru remuchina uye kugadzikana kwekupisa kunoita kuti ingot igare kwenguva refu uye ive yakavimbika mumamiriro akasiyana-siyana ekuyedza.

Kuchinja-chinja:
Yakakodzera maindasitiri akasiyana-siyana, kubva kumasisitimu esimba kusvika kumakutaurirana uye maoptoelectronics.

Mhedziso

Iyo ingot ine 6-inch Silicon Carbide (4H-SiC) ine semi-insulating ingot, dummy grade, inopa puratifomu yakavimbika uye inoshanda zvakasiyana-siyana yekutsvagisa, kugadzira maprototyping, uye kuyedza muzvikamu zvetekinoroji zvemazuva ano. Hunhu hwayo hwakasiyana hwekupisa, magetsi, uye michina, pamwe chete nekukwanisika kwayo uye kugona kwayo kugadzirisa, zvinoita kuti ive chinhu chakakosha kune vese vedzidzo nemaindasitiri. Kubva kumagetsi emagetsi kusvika kumaRF system uye zvishandiso zvakaomeswa nemwaranzi, iyi ingot inotsigira hunyanzvi padanho rega rega rekuvandudza.
Kuti uwane rumwe ruzivo rwakadzama kana kukumbira mutengo, ndapota taura nesu zvakananga. Chikwata chedu chehunyanzvi chakagadzirira kukubatsira nemhinduro dzakagadzirirwa iwe kuti usvike paunoda.

Dhayagiramu Yakadzama

SiC Ingot06
SiC Ingot12
SiC Ingot05
SiC Ingot10

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