6 muSilicon Carbide 4H-SiC Semi-Insulating Ingot, Dummy Giredhi
Properties
1. Zvinhu Zvenyama uye Zvimiro
● Rudzi Rwezvinhu: Silicon Carbide (SiC)
● Polytype: 4H-SiC, hexagonal crystal structure
● Diameter: 6 inches (150 mm)
● Hukobvu: Inogadzirika (5-15 mm yakajairika kune dummy giredhi)
● Crystal Orientation:
oPrimary: [0001] (C-ndege)
oSecondary sarudzo: Off-axis 4 ° ye optimized epitaxial kukura
● Primary Flat Oientation: (10-10) ± 5 °
●Secondary Flat Oientation: 90 ° counterclockwise kubva kupuraimari flat ± 5 °
2. Electrical Properties
● Kuramba:
oSemi-insulating (> 106 ^ 66 Ω · cm), yakanakira kuderedza parasitic capacitance.
● Doping Type:
oNounetionally doped, zvichiita kuti pave nepamusoro pekugadzirisa magetsi uye kugadzikana pasi pemamiriro ezvinhu ekushanda.
3. Thermal Properties
● Thermal Conductivity: 3.5-4.9 W / cm·K, zvichiita kuti kuparara kwekushisa kunobudirira mumagetsi emagetsi makuru.
● Thermal Expansion Coefficient: 4.2 × 10-64.2 \ nguva 10 ^ {-6} 4.2 × 10-6 / K, kuvimbisa kugadzikana kwedimensional panguva yekupisa kwepamusoro.
4. Optical Properties
● Bandgap: Wide bandgap ye3.26 eV, inobvumira kushanda pasi pemhepo yakakwirira uye kutonhora.
● Kujeka: Kujeka kwepamusoro kuUV uye mafungu anooneka, anobatsira pakuongorora optoelectronic.
5. Mechanical Properties
● Kuoma: Mohs chiyero 9, yechipiri chete kune diamond, kuve nechokwadi chekugara panguva yekugadzirisa.
● Defect Density:
oKudzorwa kune mashoma macro kuremara, kuve nechokwadi chakaringana mhando yedummy-giredhi maapplication.
● Kupfava: Kufanana nekutsauka
Parameter | Details | Unit |
Giredhi | Dummy Grade | |
Diameter | 150.0 ± 0.5 | mm |
Wafer Orientation | Pa-axis: <0001> ± 0.5° | degree |
Electrical Resistivity | > 1E5 | Ω·cm |
Yekutanga Flat Oriental | {10-10} ± 5.0° | degree |
Primary Flat Length | Notch | |
Cracks (High-Intensity Light Inspection) | <3 mm mune radial | mm |
Hex Plates (Yakakwira-Intensity Chiedza Kuongorora) | Kuwedzera nzvimbo ≤ 5% | % |
Polytype Nzvimbo (Yakakwira-Intensity Mwenje Yekuongorora) | Cumulative area ≤ 10% | % |
Micropipe Density | <50 | cm−2^-2−2 |
Edge Chipping | 3 inobvumirwa, imwe neimwe ≤ 3 mm | mm |
Cherechedza | Slicing wafer ukobvu <1 mm,> 70% (kusingabatanidzi migumo miviri) inosangana nezvinodiwa pamusoro |
Applications
1. Prototyping uye Tsvagiridzo
Iyo dummy-giredhi 6-inch 4H-SiC ingot chinhu chakanakira prototyping uye kutsvagisa, ichibvumira vanogadzira uye marabhoritari ku:
●Test process parameters mu Chemical Vapor Deposition (CVD) kana Physical Vapor Deposition (PVD).
● Gadzirisa nekunatsa maetching, kukwenenzvera, nekuchekeresa mawafer.
●Ongorora magadzirirwo emidziyo mitsva usati waenda kune zvigadzirwa zvegiredhi rekugadzira.
2. Device Calibration uye Testing
Iyo semi-insulating zvivakwa zvinoita kuti ingot iyi ive yakakosha kune:
●Kuongorora nekugadzirisa maitiro emagetsi emagetsi epamusoro-soro uye e-high-frequency devices.
●Kutevedzera mamiriro ekushanda eMOSFETs, IGBTs, kana diode munzvimbo dzekuedza.
●Kushanda sechinhu chinodhura chinotsiva chepamusoro-chekuchena ma substrates panguva yekukura kwekutanga.
3. Simba Electronics
Iyo yakakwira yekupisa yekupisa uye yakafara bandgap maitiro e4H-SiC inogonesa kushanda kwakanaka mumagetsi emagetsi, kusanganisira:
●Magetsi emagetsi epamusoro-soro.
● magetsi emotokari (EV) inverters.
● Renewable simba zvirongwa, zvakadai solar inverters uye wind turbines.
4. Radio Frequency (RF) Applications
4H-SiC's yakaderera dielectric kurasikirwa uye yakakwira erekitironi kufamba kunoita kuti ive yakakodzera:
● RF amplifiers uye transistors muhutano hwekukurukurirana.
● High-frequency radar systems for aerospace uye kudzivirira kushandiswa.
● Wireless network zvikamu zvezvinobuda 5G technologies.
5. Radiation-Resistant Devices
Nekuda kwekupokana kwayo neradiation-induced defects, semi-insulating 4H-SiC yakanakira:
● Midziyo yekuongorora nzvimbo, kusanganisira setiraiti yemagetsi uye masisitimu emagetsi.
● Magetsi akaomeswa nemwaranzi kuti atarise uye adzore.
●Dziviriro zvikumbiro zvinoda kusimba munzvimbo dzakanyanyisa.
6. Optoelectronics
Iyo yekuona pachena uye yakakura bandgap ye4H-SiC inogonesa kushandiswa kwayo mu:
● UV photodetectors uye high-power LEDs.
●Kuongorora machira optical uye kurapwa kwepamusoro.
●Prototyping optical components for advanced sensors.
Zvakanakira zveDummy-Grade Material
Kubudirira Kwemari:
Iyo dummy giredhi ndiyo inokwanisika imwe nzira yekutsvagisa kana yekugadzira-giredhi zvinhu, zvichiita kuti ive yakanakira yenguva dzose yekuyedza uye kugadzirisa maitiro.
Customizability:
Zvimiro zvinogadziriswa uye kutaridzika kwekristaro kunogonesa kuenderana nehuwandu hwakawanda hwekushandisa.
Scalability:
Iyo 6-inch dhayamita inowirirana neindasitiri zviyero, zvichibvumira kuyera kusingaenzaniswi kune yekugadzira-giredhi maitiro.
Kusimba:
Kusimba kwemagetsi uye kugadzikana kwekupisa kunoita kuti ingot igare yakasimba uye yakavimbika pasi pemamiriro ekuedza akasiyana.
Zvakasiyana-siyana:
Inokodzera maindasitiri akawanda, kubva kusimba masisitimu kusvika kukukurukurirana uye optoelectronics.
Mhedziso
Iyo 6-inch Silicon Carbide (4H-SiC) semi-insulating ingot, dummy giredhi, inopa yakavimbika uye inoshanda chikuva chekutsvaga, prototyping, uye kuyedza mukucheka-kumucheto tekinoroji zvikamu. Iyo yakasarudzika yekupisa, yemagetsi, uye mekiniki zvivakwa, zvakasanganiswa nekukwanisa uye kugadzirisa, zvinoita kuti ive chinhu chakakosha kune zvese zvidzidzo uye indasitiri. Kubva pamagetsi emagetsi kuenda kuRF masisitimu uye neradio-yakaomeswa zvishandiso, iyi ingot inotsigira hunyanzvi padanho rega rega rebudiriro.
Kuti uwane rumwe ruzivo rwakadzama kana kukumbira mutengo, ndapota taura nesu zvakananga. Chikwata chedu chehunyanzvi chakagadzirira kubatsira nemhinduro dzakagadzirirwa kuzadzisa zvaunoda.