4inch SiC Epi wafer yeMOS kana SBD

Epitaxy inoreva kukura kwechidzitiro chemhando yepamusoro imwe crystal zvinhu pamusoro pesilicon carbide substrate. Pakati pavo, kukura kwe gallium nitride epitaxial layer pane semi-insulating silicon carbide substrate inonzi heterogeneous epitaxy; kukura kwesilicon carbide epitaxial layer pamusoro peiyo conductive silicon carbide substrate inonzi homogeneous epitaxy.

Epitaxial inoenderana neyakagadzirwa dhizaini zvinodiwa zvekukura kweiyo huru inoshanda layer, inotaridza zvakanyanya kushanda kwechip uye mudziyo, mutengo we23%. Nzira huru dzeSiC dzakatetepa firimu epitaxy panguva ino dzinosanganisira: kemikari vapor deposition (CVD), molecular beam epitaxy (MBE), liquid phase epitaxy (LPE), uye pulsed laser deposition uye sublimation (PLD).

Epitaxy inobatanidza zvakanyanya muindasitiri yese. Nekukura GaN epitaxial layers pa semi-insulating silicon carbide substrates, GaN epitaxial wafers based on silicon carbide inogadzirwa, iyo inogona kuitwazve kuita GaN RF michina yakadai seyepamusoro maelectron mobility transistors (HEMTs);

Nekukura silicon carbide epitaxial layer pane conductive substrate kuti iwane silicon carbide epitaxial wafer, uye mune epitaxial layer pakugadzirwa kweSchottky diodes, goridhe-oxygen half-field effect transistors, insulated gedhi bipolar transistors uye mamwe masimba emagetsi, saka kunaka kweiyo epitaxial pakuita kwechishandiso kwakakura kwazvo kuita basa rakakosha indasitiri.