4inch SiC Epi wafer yeMOS kana SBD

Tsanangudzo Pfupi:

SiCC ine yakazara SiC (Silicon Carbide) wafer substrate yekugadzira mutsara, inobatanidza kukura kwekristaro, kugadzira wafer, kugadzira wafer, kupukuta, kuchenesa uye kuyedza. Parizvino, isu tinokwanisa kupa axial kana off-axis semi-insulating uye semi-conductive 4H uye 6H SiC zvimedu zvine saizi ye5x5mm2, 10x10mm2, 2 ″, 3 ″, 4 ″ uye 6 ″, kupaza kuburikidza nekuremerwa kudzvanywa, sekristaro kugadzirisa. uye kukurumidza kukura uye nezvimwe Yakaputsa kuburikidza neakakosha matekinoroji akadai sekuremara kudzvanya, kristaro mhodzi kugadzirisa uye kukurumidza kukura, uye yakasimudzira yekutanga tsvagiridzo nekuvandudzwa kwesilicon carbide epitaxy, zvishandiso uye zvimwe zvine chekuita nekutsvaga kwekutanga.

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Epitaxy inoreva kukura kwechidzitiro chemhando yepamusoro imwechete yekristaro zvinhu pamusoro pesilicon carbide substrate. Pakati pavo, kukura kwe gallium nitride epitaxial layer pane semi-insulating silicon carbide substrate inonzi heterogeneous epitaxy; kukura kwesilicon carbide epitaxial layer pamusoro peiyo conductive silicon carbide substrate inonzi homogeneous epitaxy.

Epitaxial inoenderana neyakagadzirwa dhizaini zvinodiwa zvekukura kweiyo huru inoshanda layer, inotaridza zvakanyanya kushanda kwechip uye mudziyo, mutengo we23%. Nzira huru dzeSiC dzakatetepa firimu epitaxy panguva ino dzinosanganisira: kemikari vapor deposition (CVD), molecular beam epitaxy (MBE), liquid phase epitaxy (LPE), uye pulsed laser deposition uye sublimation (PLD).

Epitaxy inobatanidza zvakanyanya muindasitiri yese. Nekukura GaN epitaxial layers pa semi-insulating silicon carbide substrates, GaN epitaxial wafers based on silicon carbide inogadzirwa, iyo inogona kuitwazve kuita GaN RF michina yakadai seyepamusoro maelectron mobility transistors (HEMTs);

Nekukura silicon carbide epitaxial layer pane conductive substrate kuwana silicon carbide epitaxial wafer, uye mune epitaxial layer pakugadzirwa kweSchottky diodes, goridhe-okisijeni hafu-mumunda effect transistors, insulated gedhi bipolar transistors uye mamwe magetsi emagetsi, saka kunaka kwe iyo epitaxial pakuita kwechishandiso chikuru chakanyanya pakusimudzira indasitiri iri kutambawo basa rakakosha.