Wafer ye4inch SiC Epi yeMOS kana SBD

Epitaxy zvinoreva kukura kwechikamu chemhando yepamusoro chekristaro imwe pamusoro pesubstrate yesilicon carbide. Pakati pazvo, kukura kwegallium nitride epitaxial layer pane substrate yesilicon carbide inodziisa kunonzi heterogeneous epitaxy; kukura kwesilicon carbide epitaxial layer pamusoro pesubstrate yesilicon carbide inodziisa kunonzi homogeneous epitaxy.

Epitaxial inoenderana nezvinodiwa zvekugadzira mudziyo wekukura kwechikamu chikuru chinoshanda, inonyanya kusarudza mashandiro echip nemudziyo, mutengo we23%. Nzira huru dzeSiC thin film epitaxy padanho iri dzinosanganisira: chemical vapor deposition (CVD), molecular beam epitaxy (MBE), liquid phase epitaxy (LPE), uye pulsed laser deposition and sublimation (PLD).

Epitaxy chinhu chakakosha zvikuru muindasitiri yese. Nekukura maGaN epitaxial layers pa semi-insulating silicon carbide substrates, maGaN epitaxial wafers akavakirwa pasilicon carbide anogadzirwa, ayo anogona kugadzirwazve kuita zvishandiso zveGaN RF zvakaita sehigh electron mobility transistors (HEMTs);

Nekukura kwesilicon carbide epitaxial layer pa conductive substrate kuti uwane silicon carbide epitaxial wafer, uye mu epitaxial layer pakugadzirwa kweSchottky diodes, gold-oxygen half-field effect transistors, insulated gate bipolar transistors nezvimwe zvishandiso zvemagetsi, saka mhando ye epitaxial pakushanda kwemudziyo ine simba guru pakukura kweindasitiri iri kutambawo basa rakakosha.