4inch 6inch 8inch SiC Crystal Kukura Furnace yeCVD Maitiro

4inch 6inch 8inch SiC Crystal Kukura Bira reCVD process Featured Image

Tsanangudzo Pfupi:

XKH's SiC Crystal Growth Furnace CVD Chemical Vapor Deposition system inoshandisa tekinoroji inotungamira pasi rose vapor deposition tekinoroji, yakanyatsogadzirirwa yemhando yepamusoro yeSiC single crystal kukura. Kuburikidza nekunyatso kudzora kwemaitiro maparamita anosanganisira kuyerera kwegasi, tembiricha uye kudzvanywa, inogonesa inodzorwa SiC crystal kukura pa4-8 inch substrates. Iyi CVD system inogona kugadzira akasiyana SiC crystal marudzi anosanganisira 4H/6H-N mhando uye 4H/6H-SEMI insulating type, ichipa mhinduro dzakakwana kubva kune michina kuenda kune maitiro. Iyo sisitimu inotsigira zvinodiwa zvekukura zve2-12 inch wafers, zvichiita kuti ive yakanyanya kukodzera kugadzirwa kwakawanda kwemagetsi emagetsi uye RF zvishandiso.

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Features

Kushanda Nheyo

Nheyo yemusimboti weCVD yedu system inosanganisira kupisa kwekuora kwesilicon-ine (semuenzaniso, SiH4) uye kabhoni-ine (semuenzaniso, C3H8) inotangira magasi pakupisa kwakanyanya (kazhinji 1500-2000 ° C), kuisa SiC imwe makristasi pane substrates kuburikidza negasi-chikamu chemakemikari reactions. Iyi tekinoroji yakanyatsokodzera kugadzira yakakwirira-kuchena (> 99.9995%) 4H/6H-SiC single crystals ine yakaderera density density (<1000/cm²), kusangana zvakaomarara zvinodiwa zvemagetsi emagetsi uye RF zvishandiso. Kuburikidza nekudzora kwakaringana kwekuumbwa kwegasi, kuyerera uye tembiricha gradient, sisitimu inogonesa kutonga kwakaringana kwekristaro conductivity mhando (N / P rudzi) uye resistivity.

System Types uye Technical Parameters

System Type	Temperature Range	Key Features	Applications
High-Temp CVD	1500-2300°C	Graphite induction kudziyisa, ± 5°C tembiricha kufanana	Bulk SiC crystal kukura
Hot-Filament CVD	800-1400°C	Tungsten filament kudziyisa, 10-50μm/h deposition rate	SiC gobvu epitaxy
VPE CVD	1200-1800°C	Multi-zone tembiricha kutonga,> 80% gasi kushandiswa	Mass epi-wafer kugadzirwa
PECVD	400-800°C	Plasma yakakwidziridzwa, 1-10μm/h deposition rate	Low-temp SiC mafirimu matete

Hunhu Hunokosha Hwounyanzvi

1. Advanced Temperature Control System
Choto chine multi-zone resistive heat system inokwanisa kuchengetedza tembiricha inosvika 2300°C ine ±1°C kufanana mukamuri yese yekukura. Iyi chaiyo thermal manejimendi inowanikwa kuburikidza ne:
12 yakazvimirira inodzorwa kudziyisa nzvimbo.
Redundant thermocouple monitoring (Rudzi C W-Re).
Real-time thermal profile kugadzirisa algorithms.
Mvura-yakatonhorera madziro ekamuri yekupisa yekudziya gradient control.

2. Gasi Delivery uye Kusanganisa Technology
Yedu yekugovera gasi sisitimu inovimbisa yakakwana precursor musanganiswa uye yunifomu kuendesa:
Misa inoyerera inodzora ne ± 0.05sccm kunyatsoita.
Multi-point gasi jekiseni rakawanda.
In-situ gasi kuumbwa kwekutarisa (FTIR spectroscopy).
Otomatiki kuyerera muripo panguva yekukura kutenderera.

3. Crystal Quality Enhancement
Iyo sisitimu inosanganisira akati wandei matsva ekuvandudza kristaro mhando:
Inotenderera substrate inobata (0-100rpm programmable).
Advanced boundary layer control tekinoroji.
In-situ defect monitoring system (UV laser scattering).
Automatic stress compensation panguva yekukura.

4. Process Automation uye Kudzora
Fully otomatiki resipi execution.
Chaiyo-nguva yekukura parameter optimization AI.
Remote monitoring uye diagnostics.
1000+ parameter data kutema (yakachengetwa kwemakore mashanu).

5. Kuchengetedza uye Kuvimbika Zvimiro
Triple-redundant over-temperature dziviriro.
Automatic emergency purge system.
Seismic-yakatemerwa dhizaini yekugadzira.
98.5% uptime garandi.

6. Scalable Architecture
Modular dhizaini inobvumira kugona kukwidziridzwa.
Inoenderana ne100mm kusvika 200mm wafer saizi.
Inotsigira zvese zvakadzika uye zvakachinjika zvigadziriso.
Kukurumidza-kuchinja zvikamu zvekugadzirisa.

7. Kushanda Kwesimba
30% yakaderera simba rekushandisa pane inofananidzwa masisitimu.
Heat recovery system inobata 60% yekupisa kwemarara.
Yakagadziridzwa gasi kushandisa algorithms.
LEED-inoenderana nenzvimbo zvinodiwa.

8. Zvinhu Zvakasiyana-siyana
Inokura ese makuru eSiC polytypes (4H, 6H, 3C).
Inotsigira ese ari maviri conductive uye semi-insulating akasiyana.
Inogadzirisa zvirongwa zvakasiyana-siyana zvedoping (N-mhando, P-mhando).
Inoenderana nemamwe maprecursors (semuenzaniso, TMS, TES).

9. Vacuum System Performance
Base pressure: <1×10⁻⁶ Torr
Chiyero chekuvuza: <1×10⁻⁹ Torr·L/sec
Pombi kumhanya: 5000L/s (yeSiH₄)

Automatic pressure control panguva yekukura kutenderera
Iyi yakazara tekinoroji yekumisikidzwa inoratidza yedu sisitimu kugona kugadzira yekutsvagisa-giredhi uye yekugadzira-mhando SiC makristasi ane indasitiri inotungamira kuenderana uye goho. Iko kusanganiswa kwekunyatso kudzora, kutarisisa kwepamberi, uye huinjiniya hwakasimba kunoita kuti iyi CVD ive sarudzo yakakwana kune ese ari maviri R&D uye vhoriyamu yekugadzira maapplication mumagetsi emagetsi, RF zvishandiso, uye zvimwe zvepamberi semiconductor application.

Hunhu Hunokosha

1. High-Quality Crystal Kukura
• Defect density yakaderera se<1000/cm² (4H-SiC)
• Doping kufanana <5% (6-inch wafers)
• Crystal kuchena >99.9995%

2. Hukuru-Size Production Kugona
• Inotsigira kusvika ku8-inch wafer kukura
• Diameter kufanana >99%
• Kusiyana kwehukobvu <±2%

3. Precise Process Control
• Kunyatsoita tembiricha ±1°C
• Gasi kuyerera kwekudzora kurongeka ± 0.1sccm
• Kurongeka kwekudzora kurongeka ± 0.1Torr

4. Kushanda Kwesimba
• 30% yakawanda simba rinoshanda kupfuura nzira dzakajairika
• Kukura kwekukura kusvika ku50-200μm/h
• Equipment uptime >95%

Key Applications

1. Simba Electronic Devices
6-inch 4H-SiC substrates ye1200V+ MOSFETs/diode, ichidzikisa kurasikirwa kwekuchinja ne50%.

2. 5G Kukurukurirana
Semi-insulating SiC substrates (resistivity>10⁸Ω·cm) yebase station PAs, ine kurasikirwa kwekuisa <0.3dB pa>10GHz.

3. New Energy Vehicles
Motokari-giredhi SiC magetsi modules anowedzera EV chiyero ne5-8% uye kuderedza nguva yekuchaja ne30%.

4. PV Inverters
Yakaderera-defect substrates inowedzera shanduko inoshanda kupfuura 99% uku ichidzikisa saizi yehurongwa ne40%.

XKH's Services

1. Customization Services
Yakagadzirirwa 4-8 inch CVD masisitimu.
Inotsigira kukura kwe4H/6H-N mhando, 4H/6H-SEMI insulating type, nezvimwe.

2. Technical Support
Kudzidziswa kwakazara pamusoro pekushanda uye process optimization.
24/7 technical mhinduro.

3. Turnkey Solutions
Kupera-kusvika-kumagumo masevhisi kubva pakumisikidza kusvika kugadziriso yekusimbisa.

4. Kugovera Zvinhu
2-12 inch SiC substrates/epi-wafers iripo.
Inotsigira 4H/6H/3C polytypes.

Zvikamu zvakasiyana zvinosanganisira:
Kusvika ku8-inch crystal kukura kugona.
20% nekukurumidza kukura kwechiyero kupfuura avhareji yeindasitiri.
98% kuvimbika kwehurongwa.
Yakazara yakangwara kudzora system package.