4inch 6inch 8inch SiC Crystal Growth Furnace yeCVD Process

Tsananguro pfupi:

Sisitimu yeXKH yeSiC Crystal Growth Furnace CVD Chemical Vapor Deposition inoshandisa tekinoroji yepamusoro-soro yemakemikari ekuisa vapor, yakagadzirirwa kukura kweSiC single crystal yemhando yepamusoro. Kuburikidza nekudzora kwakaringana kwemaitiro anosanganisira kuyerera kwegasi, tembiricha uye kumanikidzwa, inogonesa kukura kweSiC crystal inodzorwa pa 4-8 inch substrates. Iyi sisitimu yeCVD inogona kugadzira mhando dzakasiyana dzeSiC crystal dzinosanganisira 4H/6H-N type uye 4H/6H-SEMI insulating type, ichipa mhinduro dzakakwana kubva kumidziyo kuenda kune dzimwe nzira. Sisitimu iyi inotsigira zvinodiwa pakukura kwe2-12 inch wafers, zvichiita kuti ive yakakodzera kugadzirwa kwemagetsi emagetsi neRF devices.

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Musimboti mukuru weCVD system yedu unosanganisira kuora kwekupisa kwemagasi anotungamira ane silicon (semuenzaniso, SiH4) uye ane kabhoni (semuenzaniso, C3H8) pakupisa kwakanyanya (kazhinji 1500-2000°C), kuisa makristaro eSiC single pa substrates kuburikidza ne gas-phase chemical reactions. Iyi tekinoroji yakakodzera zvikuru kugadzira high-purity (>99.9995%) 4H/6H-SiC single crystals ine defect density yakaderera (<1000/cm²), ichisangana nezvinodiwa zvakanyanya zvezvinhu zvemagetsi emagetsi neRF devices. Kuburikidza nekudzora kwakaringana kwegasi, flow rate uye tembiricha gradient, system inogonesa kudzora kwakaringana kwe crystal conductivity type (N/P type) uye resistivity.

Mhando dzeSisitimu uye Magadzirirwo eUnyanzvi

Rudzi rweSisitimu	Nzvimbo yekupisa	Zvinhu Zvikuru	Mashandisirwo
CVD yekupisa kwakanyanya	1500-2300°C	Kupisa kweGraphite induction, ±5°C tembiricha yakafanana	Kukura kwekristaro yeSiC yakawanda
Hot-Filament CVD	800-1400°C	Kupisa kweTungsten filament, mwero wekuisa 10-50μm/h	SiC gobvu epitaxy
VPE CVD	1200-1800°C	Kudzora tembiricha yenzvimbo dzakawanda, >80% kushandiswa kwegasi	Kugadzirwa kwewafer yakawanda ye epi-wafer
PECVD	400-800°C	Plasma yakawedzerwa, chiyero chekuisa 1-10μm/h	Mafirimu matete eSiC ane tembiricha yakaderera

Hunhu Hukuru hweUnyanzvi

1. Sisitimu Yepamusoro Yekudzora Kupisa
Choto ichi chine sisitimu yekupisa ine nzvimbo dzakawanda inokwanisa kuchengetedza tembiricha inosvika 2300°C ine ±1°C yakafanana mukamuri rese rekukura. Kudzora kupisa uku kwakanyatsojeka kunowanikwa kuburikidza ne:
Nzvimbo gumi nembiri dzekupisa dzinodzorwa dzakazvimiririra.
Kuongororwa kwethermocouple kusingawanzoitiki (Type C W-Re).
Maitiro ekugadzirisa chimiro chekupisa panguva chaiyo.
Madziro emakamuri anotonhorerwa nemvura kuti adzore kupisa.

2. Tekinoroji yeKuendesa Gasi uye Kusanganisa
Sisitimu yedu yekugovera gasi chaiyo inoita kuti pave nekusanganiswa kwakakodzera uye kuendeswa kwakafanana:
Zvinodzora kuyerera kwehuwandu zvine ±0.05sccm chaiyo.
Injection yegesi ine mapoinzi akawanda.
Kuongororwa kwehuwandu hwegasi riri mukati (FTIR spectroscopy).
Kubhadhara kwemvura inoyerera otomatiki panguva yekukura kwemvura.

3. Kuvandudza Hunhu hweKristaro
Sisitimu iyi inosanganisira zvinhu zvitsva zvakawanda kuti ivandudze kunaka kwekristaro:
Chibatiso che substrate chinotenderera (chinogona kurongwa mu 0-100rpm).
Tekinoroji yepamusoro yekudzora miganhu yezvikamu.
Sisitimu yekutarisa zvikanganiso zviri munzvimbo (UV laser scattering).
Kugadzirisa kushushikana otomatiki panguva yekukura.

4. Kuzvigadzirisa uye Kudzora Maitiro
Kugadzirwa kweresipi otomatiki zvizere.
Kugadzirisa ma parameter ekukura panguva chaiyo (AI).
Kutarisa uye kuongorora chirwere uri kure.
Kunyora data rema parameter anopfuura chiuru (rakachengetwa kwemakore mashanu).

5. Zvinhu zveKuchengetedzeka uye Kuvimbika
Dziviriro inowedzerwa katatu pakupisa kwakanyanya.
Sisitimu yekuchenesa otomatiki nekukurumidza.
Dhizaini yechivako ine mwero wekudengenyeka kwenyika.
98.5% garandi yekupedza nguva.

6. Magadzirirwo Anogona Kukura
Dhizaini yemodular inobvumira kuvandudzwa kwesimba rekushandisa.
Inoenderana nehukuru hwewafer hwe100mm kusvika 200mm.
Inotsigira magadzirirwo akatwasuka uye akatwasuka.
Zvikamu zvinokurumidza kushandurwa kuti zvigadzirwe.

7. Kushanda Nesimba Zvakanaka
Kushandiswa kwesimba kwakaderera ne30% pane masisitimu akafanana.
Sisitimu yekudzoreredza kupisa inobata 60% yekupisa kwemarara.
Maitiro ekushandisa gasi akagadziridzwa.
Zvinodiwa zvenzvimbo zvinotevedzera LEED.

8. Kuchinja-chinja kwezvinhu
Inokura mhando dzese huru dzeSiC (4H, 6H, 3C).
Inotsigira mhando dze conductive ne semi-insulating.
Inobatsira zvirongwa zvakasiyana-siyana zvekushandisa zvinodhaka (N-type, P-type).
Inoenderana nezvimwe zvinotangira (semuenzaniso, TMS, TES).

9. Kushanda kweSisitimu yeVacuum
Kumanikidzwa kwehwaro: <1×10⁻⁶ Torr
Mwero wekudonhedza mvura: <1×10⁻⁹ Torr·L/sek
Kumhanya kwekupomba: 5000L/s (yeSiH₄)

Kudzora kumanikidzwa otomatiki panguva yekukura
Tsanangudzo iyi yehunyanzvi inoratidza kugona kwesystem yedu kugadzira makristaro eSiC emhando yepamusoro uye emhando yepamusoro ane kurongeka uye goho rinotungamira muindasitiri. Kusanganiswa kwekudzora kwakaringana, kutarisa kwepamusoro, uye mainjiniya akasimba kunoita kuti system iyi yeCVD ive sarudzo yakanakisisa kune ese ari maviri mashandisirwo eR&D uye ekugadzira volume mumashandisirwo emagetsi emagetsi, zvishandiso zveRF, uye mamwe mashandisirwo epamusoro e semiconductor.

Zvakanakira Zvikuru

1. Kukura kweKristaroti Yemhando Yepamusoro
• Kuwanda kwezvikanganiso kwakaderera kusvika <1000/cm² (4H-SiC)
• Kufanana kwekushandisa zvinodhaka <5% (mawafers e6-inch)
• Kuchena kwekristaro >99.9995%

2. Kugona Kugadzira Zvikuru
• Inotsigira kukura kwewafer inosvika masendimita masere
• Kufanana kwedhayamita >99%
• Kusiyana kweukobvu <±2%

3. Kudzora Maitiro Kwazvo
• Kururama kwekudzora tembiricha ±1°C
• Kururama kwekudzora kuyerera kwegasi ±0.1scm
• Kururama kwekudzora kudzvanywa ±0.1Torr

4. Kushanda Nesimba Zvakanaka
• 30% inoshandisa simba zvakanyanya kupfuura nzira dzemazuva ese
• Kukura kwepakati kusvika 50-200μm/awa
• Nguva yekushandisa michina >95%

Zvishandiso Zvikuru

1. Zvishandiso zvemagetsi zvemagetsi
Zvishandiso zve 4H-SiC zve 1200V+ MOSFETs/diodes, zvichideredza kurasikirwa kwe switching ne 50%.

2. Kutaurirana kwe5G
Zvidziviriro zveSiC zvinodzivirira kupisa (resistivity >10⁸Ω·cm) zvebase station PAs, nekurasikirwa kweinsertion <0.3dB pa >10GHz.

3. Mota Itsva dzeSimba
Mamodule eSiC emhando yemotokari anowedzera huwandu hweEV ne5-8% uye anoderedza nguva yekuchaja ne30%.

4. MaInverter ePV
Zvishandiso zvisina dambudziko rakawanda zvinowedzera kushanda kwekushandura kupfuura 99% ukuwo zvichideredza saizi yesystem ne40%.

Mabasa eXKH

1. Mabasa Ekugadzirisa
Masisitimu eCVD ane 4-8 inch akagadzirirwa.
Inotsigira kukura kwemhando ye4H/6H-N, mhando ye4H/6H-SEMI insulating, nezvimwewo.

2. Rutsigiro rwehunyanzvi
Kudzidziswa kwakakwana pamusoro pekushanda uye kugadzirisa maitiro.
Mhinduro yehunyanzvi 24/7.

3. Mhinduro dzeTurnkey
Masevhisi ekupedzisira kubva pakuisa kusvika pakusimbisa mashandiro.

4. Kuwanikwa kwezvinhu
Zvidimbu zveSiC zvemainchi 2-12/epi-wafers zviripo.
Inotsigira 4H/6H/3C polytypes.

Zvinhu zvikuru zvinosiyanisa zvinosanganisira:
Kukwanisa kukura kwekristaro kusvika masendimita masere.
20% kukurumidza kukura kupfuura avhareji yeindasitiri.
Kuvimbika kwehurongwa ne98%.
Pakeji yakazara yehungwaru yekudzora system.