MaWafer e4H-SiC Epitaxial eMOSFETs ane Voltage Yakanyanya Kukwira (100–500 μm, 6 inch)

Tsananguro pfupi:

Kukura nekukurumidza kwemotokari dzemagetsi, magrid akangwara, masisitimu esimba rinodzokororwa, uye michina yeindasitiri ine simba guru kwakaita kuti pave nekudiwa kukuru kwemidziyo ye semiconductor inokwanisa kubata mavoltage akakwira, simba rakawanda, uye kushanda zvakanaka. Pakati pema semiconductors ane bandgap yakakura,kabhidhi yesilicon (SiC)inoonekwa nekureba kwayo, kupisa kwakanyanya, uye simba guru remagetsi.

Tumira email kwatiri

Zvinhu zvirimo

Dhayagiramu Yakadzama

Pfupiso yeChigadzirwa

YeduMawafer e4H-SiC epitaxialzvakagadzirwa zvakanangana nemashandisirwo eMOSFET ane voltage yakakwira zvakanyanyaNezvikamu zve epitaxial zvinotangira pa100 μm kusvika 500 μm on Zvigadziko zvepasi zvemainji matanhatu (150 mm), mawafer aya anopa nzvimbo dzakareba dzekuyerera dzinodiwa pamidziyo yemhando ye kV ukuwo achichengetedza hunhu hwekristaro hwakanaka uye kugona kukura. Ukobvu hwakajairika hunosanganisira 100 μm, 200 μm, uye 300 μm, uye kugadziriswa kuripo.

Ukobvu hweEpitaxial Layer

Chikamu che epitaxial chinoita basa guru pakuona mashandiro eMOSFET, kunyanya kuenzana pakati pevoltage yekuputsikauyeisingarambwe.

100–200 μm: Yakagadzirirwa maMOSFET ane voltage iri pakati nepakati kusvika yakakwira, ichipa chiyero chakanaka chekushanda zvakanaka kwekufambisa uye simba rekuvharira.
200–500 μm: Yakakodzera michina ine voltage yakakwira zvakanyanya (10 kV+), zvichiita kuti nzvimbo dzinofamba-famba kwenguva refu dzive nemaitiro akasimba ekupwanyika.

Munzvimbo yese,kufanana kweukobvu kunodzorwa mukati me ±2%, zvichiita kuti pave nekuenderana kubva pawafer kuenda kune wafer uye batch kuenda kune batch. Kuchinjika uku kunobvumira vagadziri kugadzirisa mashandiro emudziyo wemhando dzemagetsi avanoda uku vachichengetedza kugona kudzokororwa mukugadzirwa kwakawanda.

Maitiro Ekugadzira

Mawafer edu anogadzirwa achishandisaCVD (Chemical Vapor Deposition) yemazuva ano, izvo zvinoita kuti pave nekudzora kwakarurama ukobvu, kushandisa mishonga inodhaka, uye kunaka kwekristaro, kunyangwe kune zvidimbu zvakakora zvikuru.

CVD Epitaxy– Magasi akachena zvakanyanya uye mamiriro akagadziriswa anoita kuti nzvimbo dzakatsetseka dzive dzakatsetseka uye dzive dzisina kukwana.
Kukura Kwemachira Makobvu- Maitiro ekugadzira zvinhu zvepachivande anobvumira ukobvu hwe epitaxial kusvika pa500 μmnekufanana kwakanaka kwazvo.
Kudzora Kushandisa Doping- Kugadziriswa kwekutarisa pakati1×10¹⁴ – 1×10¹⁶ cm⁻³, ine kufanana kuri nani pane ±5%.
Kugadzirira Pamusoro- Mawafers anoedzwaKupukuta kweCMPuye kuongorora kwakasimba, kuve nechokwadi chekuti zvinoenderana nemaitiro epamusoro akadai se gate oxidation, photolithography, uye metallization.

Zvakanakira Zvikuru

Kugona Kwemagetsi Akanyanya Kukwira– Matanda e epitaxial akakora (100–500 μm) anotsigira magadzirirwo eMOSFET emhando ye kV.
Hunhu Hwakanaka hweKristaro- Kusagadzikana kwakaderera uye defect defect deficities zvinovimbisa kuvimbika uye kuderedza kubuda kwemvura.
Zvigadziko Zvikuru zvemaInch 6- Rutsigiro rwekugadzirwa kwepamusoro-soro, mutengo wakaderera pamudziyo wega wega, uye kushandirana kwakanaka.
Zvivakwa zvekupisa zvepamusoro- Kupisa kwakanyanya uye gap rakafara zvinoita kuti ishande zvakanaka pamagetsi nekupisa kwakanyanya.
Maparamita Anogona Kugadziriswa- Ukobvu, kushandisa mishonga inodhaka, kurongeka, uye kupedzwa kwenzvimbo zvinogona kugadziriswa zvichienderana nezvinodiwa chaizvo.

Magadzirirwo Akajairika

Paramita	Tsanangudzo
Rudzi rweKufambisa	N-type (yakaiswa Nitrogen)
Kuramba	Chero chipi zvacho
Angle yeOff-Axis	4° ± 0.5° (kusvika [11-20])
Kutungamirirwa neKristaro	(0001) Si-face
Ukobvu	200–300 μm (inogona kugadziriswa 100–500 μm)
Kupedzisa Kwepamusoro	Mberi: CMP yakashongedzwa (yakagadzirira epi) Kumashure: yakamonerwa kana kuporishwa
TTV	≤ 10 μm
Uta/Warp	≤ 20 μm

Nzvimbo dzeKushandisa

Mawafer epitaxial e4H-SiC akakodzera zvikuruMOSFETs mumasisitimu emagetsi akakwira zvakanyanya, kusanganisira:

Zvishandiso zvemagetsi zvinodhonza mota & ma module ekuchaja ane voltage yakawanda
Midziyo yekutumira nekuparadzira grid yakangwara
Zvishandiso zvinodzoreredza simba (zuva, mhepo, nzvimbo yekuchengetera)
Zvinhu zvemaindasitiri zvine simba guru uye masisitimu ekuchinja

Mibvunzo Inowanzo bvunzwa

Mubvunzo 1: Ndeipi mhando yekufambisa magetsi?
A1: N-type, yakasanganiswa nenitrogen — ndiyo chiyero cheindasitiri cheMOSFET nezvimwe zvishandiso zvemagetsi.

Mubvunzo wechipiri: Ndeapi makobvu epitaxial aripo?
A2: 100–500 μm, ine sarudzo dzakajairwa dze100 μm, 200 μm, uye 300 μm. Ukobvu hwakagadzirwa nevatengi hunowanikwa kana ukakumbira.

Mubvunzo 3: Ndeipi nzira yekutenderedza wafer uye angle yekunze kweaxis?
A3: (0001) Si-face, ine 4° ± 0.5° off-axis yakananga ku [11-20].

Nezvedu

XKH inonyanya kugadzira, kugadzira, uye kutengesa magirazi egirazi egirazi uye zvinhu zvitsva zvekristaro. Zvigadzirwa zvedu zvinopa zvigadzirwa zvemagetsi, zvemagetsi zvevatengi, uye zvemauto. Tinopa zvikamu zveSapphire optical, malenzi efoni, Ceramics, LT, Silicon Carbide SIC, Quartz, uye mawafer egirazi esemiconductor. Tine hunyanzvi uye michina yemazuva ano, tinobudirira mukugadzirisa zvigadzirwa zvisiri zvemazuva ano, tichivavarira kuva bhizinesi rinotungamira rezvigadzirwa zvemagetsi.