4H-semi HPSI 2inch SiC substrate wafer Production Dummy Research giredhi
Semi-insulating silicon carbide substrate SiC wafers
Silicon carbide substrate inonyanya kukamurwa kuita conductive uye semi-insulating mhando, conductive silicon carbide substrate kune n-mhando substrate inonyanya kushandiswa epitaxial GaN-based LED uye mamwe maoptoelectronic madivayiri, SiC-based power electronic devices, etc., uye semi- insulating SiC silicon carbide substrate inonyanya kushandiswa kugadzira epitaxial yeGaN yakakwirira-simba redhiyo frequency zvishandiso. Mukuwedzera, high-purity semi-insulation HPSI uye SI semi-insulation yakasiyana, yakakwirira-kuchena semi-insulation carrier concentration ye 3.5 * 1013 ~ 8 * 1015 / cm3 mararamiro, ane high electron kufamba; semi-insulation chinhu chakakwirira-chinodzivirira, resistivity yakakwira zvakanyanya, inowanzo shandiswa microwave mudziyo substrates, isiri-conductive.
Semi-insulating Silicon Carbide substrate sheet SiC wafer
SiC crystal structure inosarudza muviri wayo, maererano neSi neGaAs, SiC ine yezvimiro zvemuviri; inorambidzwa bhendi upamhi yakakura, pedyo ne3 nguva yeSi, kuve nechokwadi chokuti chigadziro chinoshanda pakupisa kwepamusoro pasi pekuvimbika kwenguva refu; kuparara kwemunda simba rakakwirira, iri 1O nguva iyo yeSi, kuve nechokwadi chekuti mudziyo voltage simba, kuvandudza mudziyo voltage kukosha; saturation erekitironi mwero yakakura, iri 2 nguva iyo yeSi, kuwedzera mudziyo frequency uye simba density; Thermal conductivity yakakwirira, kupfuura Si, thermal conductivity yakakwirira, thermal conductivity yakakwirira, thermal conductivity yakakwirira, thermal conductivity yakakwirira, kupfuura Si, thermal conductivity yakakwirira, thermal conductivity yakakwirira. High thermal conductivity, kanopfuura 3 nguva iyo yeSi, kuwedzera kupisa kwekupisa simba kwechigadzirwa uye nekuona miniaturization yemudziyo.