4 inch Sapphire Wafer C-Plane SSP/DSP 0.43mm 0.65mm
Applications
● Growth substrate yeIII-V uye II-VI michina.
● Electronics uye optoelectronics.
● IR zvikumbiro.
● Silikoni Pamusoro peSafire Integrated Circuit(SOS).
● Radio Frequency Integrated Circuit(RFIC).
Mukugadzirwa kwe LED, masafire esafire anoshandiswa se substrate yekukura kwe gallium nitride (GaN) makristasi, ayo anoburitsa chiedza kana magetsi aiswa. Safire ndiyo yakanakira substrate zvinhu zvekukura kweGaN nekuti ine yakafanana crystal chimiro uye kupisa kwekuwedzera coefficient kuGaN, iyo inoderedza hurema uye inovandudza kristaro mhando.
Mune optics, mafirita esafire anoshandiswa semahwindo uye lenzi munzvimbo dzakakwirira-dzinopisa uye dzepamusoro-tembiricha, pamwe chete neinfrared imaging system, nekuda kwekujeka kwavo kwakanyanya uye kuoma.
Tsanangudzo
Item | 4-inch C-ndege(0001) 650μm Sapphire Wafers | |
Crystal Materials | 99,999%, Kuchena Kwepamusoro, Monocrystalline Al2O3 | |
Giredhi | Prime, Epi-Yakagadzirira | |
Surface Oientation | C-ndege(0001) | |
C-ndege kure-pakona yakananga kuM-axis 0.2 +/- 0.1° | ||
Diameter | 100.0 mm +/- 0.1 mm | |
Ukobvu | 650 μm +/- 25 μm | |
Yekutanga Flat Oriental | A-ndege(11-20) +/- 0.2° | |
Primary Flat Length | 30.0 mm +/- 1.0 mm | |
Single Side Polished | Front Surface | Epi-yakakwenenzverwa, Ra <0.2 nm (neAFM) |
(SSP) | Back Surface | Ivhu rakanaka, Ra = 0.8 μm kusvika 1.2 μm |
Rutivi Rwakakwenenzverwa | Front Surface | Epi-yakakwenenzverwa, Ra <0.2 nm (neAFM) |
(DSP) | Back Surface | Epi-yakakwenenzverwa, Ra <0.2 nm (neAFM) |
TTV | <20 μm | |
BOW | <20 μm | |
WARP | <20 μm | |
Kuchenesa / Packaging | Kirasi 100 yekuchenesa imba yekuchenesa uye vacuum kurongedza, | |
25 zvidimbu mune imwe kaseti kurongedza kana chidimbu chimwe chete kurongedza. |
Packing & Shipping
Kazhinji kutaura, tinopa pasuru ne25pcs kaseti bhokisi; isu zvakare tinokwanisa kurongedzerwa nekamwe wafer mudziyo pasi pe100 giredhi yekuchenesa imba zvinoenderana nezvinodiwa nemutengi.