3inch SiC substrate Kugadzirwa Dia76.2mm 4H-N

Tsananguro pfupi:

Wafer iyi yeSilicon Carbide 4H-N ine mainch matatu yakagadzirwa ne semiconductor, yakagadzirirwa kushandiswa kwemagetsi ne optoelectronic zvine simba. Inozivikanwa nehunyanzvi hwayo hwepanyama nemagetsi, iyi wafer ndeimwe yezvinhu zvakakosha mumunda wemagetsi emagetsi.


Zvinhu zvirimo

Zvinhu zvikuru zvemawafer esilicon carbide mosfet ane 3 inch ndeizvi:

Silicon Carbide (SiC) chinhu che semiconductor chine bandgap yakakura, chinoratidzwa nekufambiswa kwemhepo kwakanyanya, kufamba kwemaerekitironi akawanda, uye simba remagetsi rakanyanya kuputsika. Hunhu uhwu hunoita kuti mawafer eSiC ave akanaka mukushandiswa kwesimba guru, frequency yakawanda, uye tembiricha yepamusoro. Kunyanya mu 4H-SiC polytype, chimiro chayo chekristaro chinopa mashandiro akanaka emagetsi, zvichiita kuti ive chinhu chinosarudzwa pakushandisa michina yemagetsi ine simba.

Wafer yeSilicon Carbide 4H-N ine ma inch matatu iwafer ine nitrogen ine conductivity yerudzi rweN. Nzira iyi ye doping inopa wafer huwandu hwakanyanya hwema electron, nokudaro ichivandudza mashandiro e conductive emuchina. Saizi yewafer, ine 3 inches (dhayamita ye76.2 mm), imhando inoshandiswa zvakanyanya muindasitiri ye semiconductor, yakakodzera maitiro akasiyana-siyana ekugadzira.

Wafer yeSilicon Carbide 4H-N ine 3-inch inogadzirwa uchishandisa nzira yePhysical Vapor Transport (PVT). Maitiro aya anosanganisira kushandura upfu hweSiC kuita makristaro mamwechete pakupisa kwakanyanya, zvichiita kuti wafer ive yakanaka uye yakafanana. Pamusoro pezvo, ukobvu hwewafer hunowanzoita kunge 0.35 mm, uye pamusoro payo panoiswa double-side polishing kuti pave nehupamhi hwepamusoro uye kutsetseka, izvo zvakakosha kune mamwe maitiro ekugadzira semiconductor anotevera.

Rudzi rwekushandiswa kwewafer yeSilicon Carbide 4H-N ye3-inch rwakakura, kusanganisira michina yemagetsi ine simba guru, masensa ekupisa kwakanyanya, michina yeRF, uye michina ye optoelectronic. Kushanda kwayo kwakanaka uye kuvimbika kunoita kuti michina iyi ishande zvakanaka mumamiriro ezvinhu akaoma, zvichizadzisa kudiwa kwezvinhu zve semiconductor zvinoshanda zvakanyanya muindasitiri yemagetsi yemazuva ano.

Tinogona kupa 4H-N 3inch SiC substrate, mhando dzakasiyana dzemawafers emuto we substrate. Tinogonawo kuronga kugadzirisa zvinoenderana nezvamunoda. Tinokugamuchirai!

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