3inch SiC substrate Kugadzira Dia76.2mm 4H-N

Tsanangudzo Pfupi:

Iyo 3-inch Silicon Carbide 4H-N wafer ndeye advanced semiconductor material, yakanyatsogadzirirwa high-performance electronics and optoelectronic applications. Inozivikanwa nehunhu hwayo hwepanyama nemagetsi, chipenga ichi chimwe chezvinhu zvakakosha mumunda wemagetsi emagetsi. .


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Zvinhu zvikuru zve 3 inch silicon carbide mosfet wafers ndezvinotevera;

Silicon Carbide (SiC) ndeye yakakura-bandgap semiconductor zvinhu, inoratidzwa nehupamhi hwekupisa conductivity, yakakwira maerekitironi kufamba, uye yakanyanya kuputsika simba remunda wemagetsi. Izvi zvivakwa zvinoita kuti maSiC wafers ave akatanhamara mune yakakwirira-simba, yakakwirira-frequency, uye yakakwirira-tembiricha maapplication. Kunyanya mu4H-SiC polytype, chimiro chayo chekristaro chinopa kuita kwakanakisa kwemagetsi, zvichiita kuti ive chinhu chesarudzo chemagetsi emagetsi.

Iyo 3-inch Silicon Carbide 4H-N wafer ndeye nitrogen-doped wafer ine N-mhando conductivity. Iyi nzira yedoping inopa wafer yakakwira erekitironi yekumisikidza, nekudaro ichiwedzera mashandiro echigadzirwa. Saizi yewafer, pa 3 inches (diameter ye 76.2 mm), chiyero chinowanzoshandiswa muindasitiri yesemiconductor, yakakodzera kune dzakasiyana siyana dzekugadzira.

Iyo 3-inch Silicon Carbide 4H-N wafer inogadzirwa uchishandisa Physical Vapor Transport (PVT) nzira. Kuita uku kunosanganisira kushandura SiC poda kuita makristasi ega patembiricha yakakwira, kuve nechokwadi chekristaro mhando uye kufanana kwewafer. Pamusoro pezvo, ukobvu hwewafesi hunowanzo kutenderedza 0.35 mm, uye huso hwayo hunoiswa paviri-padivi kukwenenzverwa kuti iwane yakanyanyisa mwero wekupfava uye kutsvedzereka, izvo zvakakosha kune inotevera semiconductor yekugadzira maitiro.

Iyo yekushandiswa kwemhando ye3-inch Silicon Carbide 4H-N wafer yakakura, inosanganisira yakakwirira-simba magetsi emagetsi, yakakwirira-tembiricha sensors, RF zvishandiso, uye optoelectronic zvishandiso. Kuita kwayo kwakanaka uye kuvimbika kunoita kuti zvishandiso izvi zvishande zvakatsiga pasi pemamiriro akanyanya, kusangana nezvinodiwa zvemhando yepamusoro semiconductor zvinhu muindasitiri yemazuva ano yemagetsi.

Tinogona kupa 4H-N 3inch SiC substrate, mamakisi akasiyana e substrate stock wafers. Tinogonawo kuronga customization maererano nezvido zvako. Welcome kubvunza!

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