2inch SiC ingot Dia50.8mmx10mmt 4H-N monocrystal

Tsanangudzo Pfupi:

A 2-inch SiC (silicon carbide) ingot inoreva cylindrical kana block-shaped single crystal yesilicon carbide ine dhayamita kana mupendero kureba kwemainji maviri. Silicon carbide ingots inoshandiswa sechinhu chekutanga kugadzirwa kweakasiyana semiconductor zvishandiso, semagetsi emagetsi emagetsi uye optoelectronic zvishandiso.

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SiC Crystal Kukura Technology

Hunhu hweSiC hunoita kuti zviome kukura makristasi ega. Izvi zvinonyanya kukonzerwa nekuti hapana chikamu chemvura chine stoichiometric ratio yeSi: C = 1: 1 pamhepo yemhepo, uye hazvigoneke kukura SiC nenzira dzekukura dzakakura, senge nzira yekudhirowa yakananga uye. iyo inodonha crucible nzira, inova ndiyo huru yeiyo semiconductor indasitiri. Nechepfungwa, mhinduro ine stoichiometric reshiyo yeSi: C = 1: 1 inogona kuwanikwa chete kana kudzvinyirira kuri kukuru kupfuura 10E5atm uye tembiricha yakakwira kupfuura 3200 ℃. Parizvino, nzira dzemazuva ose dzinosanganisira nzira yePVT, nzira yemvura-chikamu, uye yakakwirira-tembiricha mhute-chikamu chemakemikari deposition nzira.

Iwo maSiC wafers uye makristasi atinopa anonyanya kukura nemuviri mhute yekufambisa (PVT), uye inotevera sumo pfupi yePVT:

Physical vapor transport (PVT) nzira yakatanga kubva kugasi-phase sublimation technique yakagadzirwa naLely muna 1955, umo SiC poda inoiswa mugraphite tube uye inopisa kusvika pakupisa kwakanyanya kuita kuti SiC poda iparare uye kuderera, uye ipapo graphite. chubhu inotonhodzwa pasi, uye iyo yakaora gasi-chikamu zvikamu zveSiC poda inoiswa uye yakakwenenzverwa seSiC makristasi munzvimbo yakatenderedza yegraphite chubhu. Kunyangwe iyi nzira yakaoma kuwana yakakura-saizi yeSiC makristasi uye maitiro ekuisa mukati megraphite chubhu yakaoma kudzora, inopa mazano kune vanotevera vaongorori.

YM Tairov et al. muRussia yakaunza pfungwa yekristaro yembeu pahwaro huno, iyo yakagadzirisa dambudziko rekusadzoreka kwekristaro chimiro uye nucleation chinzvimbo cheSiC makristasi. Vatsvakurudzi vakatevera vakaramba vachivandudza uye vakazogadzira nzira yekufambisa vapor (PVT) iyo inoshandiswa mumaindasitiri nhasi.

Seyekutanga SiC crystal yekukura nzira, PVT parizvino ndiyo yakanyanya kukura nzira yeSiC makristasi. Zvichienzaniswa nedzimwe nzira, nzira iyi ine yakaderera zvinodiwa kuti kukura midziyo, nyore kukura muitiro, simba controllability, zvakakwana budiriro uye tsvakurudzo, uye kare maindasitiri.