2Inch 6H-N Silicon Carbide Substrate Sic Wafer Kaviri Yakakwenenzverwa Conductive Prime Giredhi Mos

Tsanangudzo Pfupi:

Iyo 6H n-mhando Silicon Carbide (SiC) imwe-crystal substrate yakakosha semiconductor zvinhu zvakashandiswa zvakanyanya musimba repamusoro-soro, yakakwirira-frequency, uye yakakwirira-tembiricha yemagetsi maapplication. Inozivikanwa neayo hexagonal crystal chimiro, 6H-N SiC inopa yakafara bhendi uye yakakwira yekupisa conductivity, ichiita kuti ive yakanaka kune inoda nharaunda.
Kuparara kwemagetsi echinyorwa ichi uye kufamba kwemagetsi kunogonesa kugadzirwa kwemagetsi emagetsi anoshanda, senge MOSFETs neIGBTs, anogona kushanda nepamusoro pemagetsi uye tembiricha pane izvo zvakagadzirwa kubva kusilicon yechinyakare. Iyo yakanakisa yekupisa conductivity inoita kuti ibudirire kupisa kupisa, kwakakosha kuchengetedza kushanda uye kuvimbika mune yakakwirira-simba maapplication.
Mune radiofrequency (RF) zvikumbiro, 6H-N SiC zvivakwa zvinotsigira kugadzirwa kwemidziyo inokwanisa kushanda nepamusoro mafrequency nekuvandudzwa. Kugadzikana kwayo kwemakemikari uye kuramba kune radiation kunoita kuti ive yakakodzera kushandiswa munzvimbo dzakaoma, kusanganisira aerospace uye chikamu chekudzivirira.
Uyezve, 6H-N SiC substrates inosanganisirwa kune optoelectronic zvishandiso, senge ultraviolet photodetectors, uko yakakura bandgap yavo inobvumira kutaridzika kwechiedza cheUV. Iko kusanganiswa kwezvivakwa izvi kunoita kuti 6H n-mhando SiC ive inochinja-chinja uye yakakosha zvinhu mukusimudzira hunyanzvi hwemazuva ano hwemagetsi uye optoelectronic.

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Izvi zvinotevera maitiro esilicon carbide wafer:

· Zita reChigadzirwa: SiC Substrate
· Hexagonal Chimiro: Yakasiyana yemagetsi zvivakwa.
Yepamusoro Electron Mobility: ~600 cm²/V·s.
· Kugadzikana kweKemikari: Kudzivirira kune corrosion.
· Radiation Resistance: Inokodzera nharaunda dzakaoma.
· Low Intrinsic Carrier Concentration: Inoshanda pakupisa kwakanyanya.
· Kugara kwenguva refu: Yakasimba michina zvivakwa.
· Optoelectronic Kugona: Inoshanda UV chiedza kuona.

Silicon carbide wafer ine akati wandei maapplication

SiC wafer Applications:
SiC (Silicon Carbide) ma substrates anoshandiswa mumhando dzakasiyana-siyana dzekushanda kwepamusoro nekuda kwezvimiro zvadzo zvakasiyana senge high thermal conductivity, high electric field simba, uye wide bandgap. Heano mamwe maapplication:

1.Magetsi emagetsi:
· High-voltage MOSFETs
IGBTs (Isulated Gate Bipolar Transistors)
·Schottky diodes
·Magetsi emagetsi

2.High-Frequency Devices:
·RF (Radio Frequency) amplifiers
·Microwave transistors
·Millimeter-wave zvishandiso

3.High-Temperature Electronics:
·Sensors uye maseketi enzvimbo dzakaomarara
·Aerospace electronics
·Automotive electronics (semuenzaniso, injini dzinodzora zvikamu)

4.Optoelectronics:
· Ultraviolet (UV) mafotodetectors
·Light-emitting diodes (LEDs)
·Laser diodes

5.Renewable Energy Systems:
·Solar inverters
· Mhepo turbine converters
·Emagetsi mota powertrains

6.Industrial uye Dziviriro:
·Radar masisitimu
·Satellite kutaurirana
·Nuclear reactor chiridzwa

SiC wafer Customization

Isu tinokwanisa kugadzirisa saizi yeSiC substrate kuti isangane nezvinodiwa zvako. Isu tinopawo 4H-Semi HPSI SiC wafer ine saizi ye10x10mm kana 5x5 mm.
Mutengo wacho unotarwa nekesi, uye iwo mapeji ekurongedza anogona kugadziridzwa kune zvaunoda.
Nguva yekutumira iri mukati memavhiki e2-4. Tinobvuma kubhadhara kuburikidza neT/T.
Fekitori yedu ine michina yekugadzira yepamusoro uye tekinoroji timu, inogona kugadzirisa akasiyana siyana, ukobvu uye maumbirwo eSiC wafer zvinoenderana nezvinodiwa nevatengi.