2Inch 6H-N Silicon Carbide Substrate Sic Wafer Yakaposhwa Kaviri Yakagadziriswa Conductive Prime Giredhi Mos Giredhi

2Inch 6H-N Silicon Carbide Substrate Sic Wafer Double Polished Conductive Prime Grade Mos Giredhi Mufananidzo Unoratidzwa

Tsananguro pfupi:

Iyo 6H n-type Silicon Carbide (SiC) single-crystal substrate chinhu chakakosha che semiconductor chinoshandiswa zvakanyanya mukushandiswa kwemagetsi ane simba guru, mafrequency akawanda, uye tembiricha yepamusoro. 6H-N SiC, inozivikanwa nechimiro chayo chekristaro chehexagonal, inopa bandgap yakakura uye thermal conductivity yakakwira, zvichiita kuti ive yakanakira nharaunda dzinoda simba rakawanda.
Simba remagetsi rechinhu ichi rakanyanya kupwanyika uye kufamba kwemaerekitironi kunoita kuti pave nemidziyo yemagetsi inoshanda zvakanaka, yakaita seMOSFET neIGBTs, iyo inogona kushanda pamagetsi netembiricha yakakwira kupfuura yakagadzirwa nesilicon yechinyakare. Kufambiswa kwayo kwakanaka kwekupisa kunoita kuti kupisa kuparare zvakanaka, zvakakosha pakuchengetedza mashandiro uye kuvimbika mumashandisirwo emagetsi ane simba rakawanda.
Mukushandiswa kwema radiofrequency (RF), hunhu hwe6H-N SiC hunotsigira kugadzirwa kwemidziyo inokwanisa kushanda pama frequency akakwira uye kushanda zvakanaka. Kugadzikana kwayo kwemakemikari uye kuramba kwayo mwaranzi kunoitawo kuti ikodzere kushandiswa munzvimbo dzakaoma, kusanganisira nzvimbo dzemuchadenga nedzekudzivirira.
Uyezve, 6H-N SiC substrates dzakakosha pamidziyo yemagetsi, senge ultraviolet photodetectors, uko bandgap yavo yakakura inobvumira kuona chiedza cheUV zvinobudirira. Kusanganiswa kwezvinhu izvi kunoita kuti 6H n-type SiC ive chinhu chinoshandiswa zvakasiyana-siyana uye chakakosha mukusimudzira tekinoroji yemazuva ano yemagetsi neyemagetsi.

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Zvinhu zvirimo

Izvi zvinotevera ndizvo zvinoitwa nesilicon carbide wafer:

· Zita reChigadzirwa: SiC Substrate
· Chimiro cheHexagonal: Hunhu hwemagetsi hwakasiyana.
· Kufamba Kwakanyanya Kwemaerekitironi: ~600 cm²/V·s.
· Kugadzikana kwemakemikari: Kusabatwa nengura.
· Kusabatwa nemwaranzi: Yakakodzera nzvimbo dzakaoma.
· Kuwanda Kwezvinhu Zvinotakura Mukati: Kunoshanda zvakanaka pakupisa kwakanyanya.
· Kugara kwenguva refu: Hunhu hwakasimba hwemakanika.
· Kugona kweOptoelectronic: Kuona chiedza cheUV zvinobudirira.

Wafer yeSilicon carbide ine mashandisirwo akawanda

Mashandisirwo eSiC wafer:
Zvishandiso zveSiC (Silicon Carbide) zvinoshandiswa mumabasa akasiyana-siyana ane simba guru nekuda kwehunhu hwazvo hwakasiyana hwakadai sekugona kupisa kwakanyanya, simba guru remagetsi, uye mukana wakakura wekushanda. Heano mamwe mashandisirwo:

1.Magetsi Emagetsi:
·MaMOSFET ane simba guru
·IGBTs (Insulated Gate Bipolar Transistors)
·Madhiodhi eSchottky
·Ma inverters emagetsi

2. Zvishandiso Zvinoshandiswa Kakawanda:
·Ma amplifiers eRF (Radio Frequency)
·Ma transistors ema microwave
·Midziyo yemafungu emamiriyoni

3. Magetsi emagetsi anodziya zvakanyanya:
·Masensa nemasekete enzvimbo dzakaoma
· Zvigadzirwa zvemagetsi zvemudenga
·Magetsi emotokari (semuenzaniso, mayuniti ekudzora injini)

4. Optoelectronics:
·Zvishandiso zvekuongorora mafoto zveUltraviolet (UV)
·Madiodhi anoburitsa chiedza (ma LED)
·Ma diode eLaser

5. Masisitimu Esimba Rinodzokororwa:
·Ma inverters ezuva
·Vashanduri vemhepo
·Magetsi emagetsi emotokari

6. Maindasitiri neDziviriro:
· Masisitimu eRadar
·Kutaurirana nesatellite
·Zvishandiso zve reactor yenyukireya

Kugadzirisa SiC wafer

Tinogona kugadzirisa saizi yeSiC substrate kuti ienderane nezvinodiwa zvenyu. Tinopawo wafer ye4H-Semi HPSI SiC ine saizi ye10x10mm kana 5x5 mm.
Mutengo unotsanangurwa nekesi yacho, uye ruzivo rwekurongedza runogona kugadziriswa zvichienderana nezvaunoda.
Nguva yekutumira iri mukati memavhiki maviri kusvika mana. Tinogamuchira muripo kuburikidza neT/T.
Fekitori yedu ine michina yekugadzira yepamusoro uye timu yehunyanzvi, iyo inogona kugadzirisa zvakasiyana-siyana zvirevo, ukobvu uye maumbirwo eSiC wafer zvichienderana nezvinodiwa nevatengi.