MaWafers eSiC ane 2 inch 6H kana 4H Semi-Insulating SiC Substrates Dia50.8mm

Tsananguro pfupi:

Silicon carbide (SiC) iboka remabhinari reGroup IV-IV, ndiyo yega boka rakasimba rakasimba muGroup IV rePeriodic Table of Elements, Inhengo inokosha yesemiconductor. SiC ine hunhu hwakanaka hwekupisa, hwemakanika, hwemakemikari uye hwemagetsi, izvo zvinoita kuti ive imwe yezvinhu zvakanakisisa zvekugadzira zvishandiso zvemagetsi zvinopisa zvakanyanya, zvine frequency yakawanda, uye zvine simba guru.

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Kushandiswa kwesilicon carbide substrate

Substrate yesilicon carbide inogona kukamurwa kuita mhando yekufambisa uye mhando yesemi-insulating zvichienderana neresistivity. Zvishandiso zvesilicon carbide zvinofambisa zvinoshandisa zvakanyanya mumotokari dzemagetsi, kugadzira simba remagetsi, nzira dzekufambisa njanji, nzvimbo dzedata, kuchaja nezvimwe zvivakwa. Indasitiri yemotokari dzemagetsi ine kudiwa kukuru kwesubstrate dzesilicon carbide dzinofambisa zvinofambisa, uye pari zvino, Tesla, BYD, NIO, Xiaopeng nedzimwe makambani emotokari itsva dzesimba akaronga kushandisa zvishandiso kana mamodule esilicon carbide.

Zvishandiso zvesilicon carbide zvinodzivirira kupisa zvakanyanya zvinoshandiswa mukutaurirana kwe5G, kutaurirana kwemotokari, mashandisirwo ekudzivirira nyika, kutumira data, ndege nedzimwe nzvimbo. Nekukura gallium nitride epitaxial layer pa semi-insulated silicon carbide substrate, gallium nitride epitaxial wafer yakagadzirwa nesilicon inogona kugadzirwazve kuita zvishandiso zve microwave RF, izvo zvinonyanya kushandiswa mumunda weRF, zvakaita se power amplifiers mukutaurirana kwe5G uye radio detectors mukudzivirira nyika.

Kugadzirwa kwezvigadzirwa zve silicon carbide substrate kunosanganisira kugadzira michina, kugadzira zvinhu zvisina kugadzirwa, kukura kwekristaro, kucheka kristaro, kugadzirisa wafer, kuchenesa nekuyedza, nezvimwe zvakawanda zvinobatanidzwa. Panyaya yezvinhu zvisina kugadzirwa, indasitiri yeSongshan Boron inopa zvinhu zvisina kugadzirwa zvesilicon carbide pamusika, uye yakawana kutengesa kudiki. Zvinhu zve semiconductor zvechizvarwa chechitatu zvinomiririrwa nesilicon carbide zvinoita basa guru muindasitiri yemazuva ano, nekukurumidzira kupinda kwemotokari itsva dzesimba uye mashandisirwo e photovoltaic, kudiwa kwesilicon carbide substrate kwava kuda kuunza inflection point.