2 inch SiC Wafers 6H kana 4H Semi-Insulating SiC Substrates Dia50.8mm

Silicon carbide substrate inogona kukamurwa kuita conductive mhando uye hafu-inodzivirira mhando zvichienderana neresistive. Conductive silicon carbide zvishandiso zvinonyanya kushandiswa mumotokari dzemagetsi, photovoltaic simba rekugadzira, njanji yekufambisa, nzvimbo dzedata, kuchaja uye zvimwe zvivakwa. Indasitiri yemotokari yemagetsi ine kudiwa kukuru kweiyo conductive silicon carbide substrates, uye parizvino, Tesla, BYD, NIO, Xiaopeng uye mamwe makambani matsva emotokari yemagetsi akaronga kushandisa silicon carbide discrete zvishandiso kana ma module.

Semi-insulated silicon carbide zvishandiso zvinonyanya kushandiswa mu5G kutaurirana, kutaurirana kwemotokari, zvikumbiro zvekudzivirira kwenyika, kutumira data, aerospace uye mamwe minda. Nekukura gallium nitride epitaxial layer pane semi-insulated silicon carbide substrate, iyo silicon-based gallium nitride epitaxial wafer inogona kuitwazve kuita microwave RF zvishandiso, izvo zvinonyanya kushandiswa mumunda weRF, senge magetsi amplifiers mu5G kutaurirana uye. redhiyo michina mukudzivirira kwenyika.

Kugadzirwa kwesilicon carbide substrate zvigadzirwa kunosanganisira kugadzirwa kwemidziyo, mbishi synthesis, kukura kwekristaro, kucheka kwekristaro, kugadzira wafer, kuchenesa uye kuyedza, uye zvimwe zvakawanda zvinongedzo. Panyaya yezvigadzirwa, Songshan Boron indasitiri inopa silicon carbide zvigadzirwa zvemusika, uye yakawana diki batch kutengesa. Chizvarwa chechitatu semiconductor zvinhu zvinomiririrwa nesilicon carbide inoita basa rakakosha muindasitiri yemazuvano, nekukasira kwekupinda kwemotokari nyowani dzesimba uye mafotovoltaic application, kudiwa kwesilicon carbide substrate kwave kuda kuunza inflection point.