12 inch SiC Substrate N Type Yakakura Saizi Yakakwirira Kuita RF Zvikumbiro

12 inch SiC Substrate N Rudzi Yakakura Saizi Yakakwirira Kuita RF Zvikumbiro Zvinoratidzwa Mufananidzo

Tsanangudzo Pfupi

Iyo 12-inch SiC substrate inomiririra kufambira mberi kwepasi mu semiconductor zvinhu tekinoroji, ichipa mabhenefiti ekushandura emagetsi emagetsi uye yakakwirira-frequency application. Seiyo indasitiri yakakura inotengeswa silicon carbide wafer fomati, iyo 12-inch SiC substrate inogonesa hupfumi husati hwamboitika hwekuyera uku uchichengetedza mabhenefiti ezvinyorwa zveakafara bandgap maitiro uye akasarudzika ekupisa zvivakwa. Zvichienzaniswa neyakajairwa 6-inch kana madiki maSiC wafers, iyo 12-inch chikuva inopa anopfuura mazana matatu muzana nzvimbo inoshandisika pane imwe wafer, ichiwedzera zvinoshamisa goho rekufa uye kuderedza mutengo wekugadzira wemidziyo yemagetsi. Iyi saizi shanduko inoratidza kushanduka kwekare kwesilicon wafers, uko kuwedzera kwedhayamita kwega kwega kwakaunza kudzikiswa kwemutengo uye kuvandudzwa kwekuita. Iyo 12-inch SiC substrate's superior thermal conductivity (inenge 3 × iyo yesilicon) uye yakakwirira yakakosha kuparara kwemunda simba inoita kuti ive yakakosha kune inotevera-chizvarwa 800V yemagetsi mota masisitimu, uko inogonesa mamwe compact uye anoshanda simba modules. Mune 5G zvivakwa, iyo yakakwira erekitironi saturation velocity inobvumira RF zvishandiso kushanda pamatunhu akakwira nekurasikirwa kwakaderera. Iyo substrate inoenderana neyakagadziridzwa silicon yekugadzira michina zvakare inogonesa kutorwa kwakatsetseka nemachira aripo, kunyangwe kubata kwakasarudzika kunodiwa nekuda kwekuomarara kwakanyanya kweSiC (9.5 Mohs). Sezvo mavhoriyamu ekugadzira achiwedzera, iyo 12-inch SiC substrate inotarisirwa kuve iyo indasitiri chiyero chepamusoro-simba maapplication, kutyaira hunyanzvi mumotokari, simba rinogoneka, uye maindasitiri ekushandura magetsi masisitimu.

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Product Detail

Product Tags

Technical parameters

12 inch Silicon Carbide (SiC) Substrate Kutsanangurwa
Giredhi		ZeroMPD Kugadzirwa Giredhi(Z Giredhi)	Standard Production Giredhi(P Giredhi)		Dummy Grade (D giredhi)
Diameter		3 0 0 mm~1305mm
Ukobvu	4H-N	750μm±15 μm	750μm±25 μm
	4H-SI	750μm±15 μm	750μm±25 μm
Wafer Orientation		Kunze kweaxis : 4.0° yakananga <1120 >±0.5° ye4H-N, Paaxis: <0001>±0.5° ye4H-SI
Micropipe Density	4H-N	≤0.4cm-2	≤4cm-2		≤25cm-2
	4H-SI	≤5cm-2	≤10cm-2		≤25cm-2
Resistivity	4H-N	0.015~0.024 Ω·cm			0.015~0.028 Ω·cm
	4H-SI	≥1E10 Ω·cm			≥1E5 Ω·cm
Yekutanga Flat Oriental		{10-10} ±5.0°
Primary Flat Length	4H-N	N/A
	4H-SI	Notch
Kusabatanidzwa kumucheto		3 mm
LTV/TTV/Bow/Warp		≤5μm/≤15μm/≤35 μm/≤55 μm			≤5μm/≤15μm/≤35 □ μm/≤55 □ μm
Kukasharara		Polish Ra≤1 nm
		CMP Ra≤0.2 nm			Ra≤0.5 nm
Edge Cracks By High Intensity Chiedza Hex Plates By High Intensity Chiedza Polytype Nzvimbo NeKusimba Kwakanyanya Chiedza Visual Carbon Inclusions Silicon Surface Scratches By High Intensity Chiedza		Hapana Cumulative area ≤0.05% Hapana Cumulative area ≤0.05% Hapana			Cumulative kureba ≤ 20 mm, single kureba≤2 mm Cumulative area ≤0.1% Cumulative area≤3% Yakawedzerwa nzvimbo ≤3% Cumulative kureba≤1×wafer dhayamita
Edge Chips By High Intensity Chiedza		Hapana anotenderwa ≥0.2mm hupamhi nekudzika			7 inotenderwa, ≤1 mm imwe neimwe
(TSD) Threading screw dislocation		≤500 cm-2		N/A
(BPD) Base plane dislocation		≤1000 cm-2		N/A
Silicon Surface Kusvibiswa NeKunyanya Kusimba Chiedza		Hapana
Packaging		Multi-wafer Cassette Kana Single Wafer Container
Notes:
1 Miganho yekuremara inoshanda kune yese wafer pamusoro kunze kweiyo yekumucheto nzvimbo yekusarudzika. 2Kukwenya kunofanirwa kutariswa paSi face chete. 3 Iyo dislocation data inongobva kuKOH etched wafers.

Key Features

1. Yakakura Kukura Kunobatsira: Iyo 12-inch SiC substrate (12-inch silicon carbide substrate) inopa nzvimbo yakakura ye-single-wafer, zvichiita kuti machipisi akawanda abudiswe pamucheka, nokudaro kuderedza mari yekugadzira uye kuwedzera zvibereko.
2. High-Performance Material: Silicon carbide yekudzivirira kwekushisa kwepamusoro uye simba rekuparara kwemunda rinoita kuti 12-inch substrate yakanaka kune yakakwirira-voltage uye high-frequency applications, yakadai seEV inverters uye kukurumidza-charging systems.
3. Kugadzirisa Kuenderana: Pasinei nekuoma kwakanyanya uye kugadzirisa matambudziko eSiC, iyo 12-inch SiC substrate inowana hurema hwepasi pasi kuburikidza neakagadziridzwa kucheka uye kupukuta maitiro, kunatsiridza goho remudziyo.
4. Superior Thermal Management: Nekupisa kwekushisa kwepamusoro pane silicon-based materials, 12-inch substrate inonyatsogadzirisa kupisa kwekushisa mumagetsi emagetsi, kuwedzera hupenyu hwemichina.

Main Applications

1. Motokari dzeMagetsi: The 12-inch SiC substrate (12-inch silicon carbide substrate) inhengo yenheyo yemagetsi emagetsi emagetsi anotevera, zvichiita kuti inverters yakakwirira iwedzere kuwedzera uye kuderedza nguva yekuchaja.

2. 5G Base Stations: Makuru makuru eSiC substrates anotsigira ma-high-frequency RF zvishandiso, achisangana nezvinodiwa zve5G base stations kune simba guru uye kurasikirwa kwakaderera.

3.Industrial Power Supplies: Mune solar inverters uye smart grids, iyo 12-inch substrate inogona kumira yakakwira voltages ichideredza kurasikirwa kwesimba.

4.Consumer Electronics: Ramangwana rinokurumidza majaja uye data centre simba rekushandisa rinogona kutora 12-inch SiC substrates kuti iwane compact size uye kushanda kwepamusoro.

XKH's Services

Isu tinonyanya kugadzirisa masevhisi e12-inch SiC substrates (12-inch silicon carbide substrates), kusanganisira:
1. Dicing & Polishing: Yakaderera-kukuvadza, high-flatness substrate processing yakagadzirirwa kune zvinodiwa nevatengi, kuve nechokwadi chekushanda kwechigadzirwa chakagadzikana.
2. Epitaxial Growth Support: High-quality epitaxial wafer services kuti ikurumidze kugadzirwa kwechip.
3. Diki-Batch Prototyping: Inotsigira R&D kusimbiswa kwemasangano ekutsvagisa nemabhizinesi, kupfupisa kutenderera kwebudiriro.
4. Technical Consulting: Kuguma-ku-kuguma mhinduro kubva pakusarudzwa kwezvinhu kusvika pakugadzirisa optimization, kubatsira vatengi kukunda SiC kugadzirisa matambudziko.
Ingave yekugadzirwa kwakawanda kana hunyanzvi kugadzirisa, yedu 12-inch SiC substrate masevhisi anowirirana nezvido zvepurojekiti yako, achisimbisa kufambira mberi kwetekinoroji.