12 inch SiC Substrate N Type Large Size High Performance RF Applications

Tsananguro pfupi:

Substrate yeSiC ye12-inch inomiririra kufambira mberi kukuru mu tekinoroji yezvinhu zve semiconductor, ichipa mabhenefiti anochinja-chinja emagetsi emagetsi uye mashandisirwo e high-frequency. Senzira yakakura kwazvo yesilicon carbide wafer inowanikwa muindasitiri, substrate yeSiC ye12-inch inogonesa hupfumi husina kumboitika uku ichichengetedza mabhenefiti echinhu chacho emhando yebandgap yakakura uye hunhu hwakanaka hwekupisa. Zvichienzaniswa nemaSiC wafers echinyakare e6-inch kana madiki, puratifomu ye12-inch inopa nzvimbo inoshandiswa inodarika 300% pawafer imwe neimwe, zvichiwedzera zvikuru die goeth uye zvichideredza mitengo yekugadzira michina yemagetsi. Kuchinja uku kwehukuru kunoratidza kushanduka kwenhoroondo kwemasilicon wafers, uko kuwedzera kwedhayamita yega yega kwakaunza kudzikiswa kukuru kwemitengo uye kuvandudzwa kwekushanda. Kufambiswa kwekupisa kwepamusoro kwe12-inch SiC substrate (inenge 3× yesilicon) uye simba guru rekupwanyika kwesimba rinoita kuti ive yakakosha kune masisitimu emotokari dzemagetsi echizvarwa chinotevera che800V, uko inogonesa mamodule emagetsi akaomesesa uye anoshanda zvakanaka. Muzvivakwa zve5G, kumhanya kwepamusoro kwemaerekitironi echinhu ichi kunobvumira michina yeRF kushanda pamafrequencies akakwira nekurasikirwa kwakaderera. Kuenderana kwesubstrate iyi nemidziyo yekugadzira silicon yakagadziriswa kunoitawo kuti zvigadzirwa zviripo zvinyatsogadzirwa, kunyangwe hazvo kutarisirwa kwakakosha kuchidiwa nekuda kwekuomarara kweSiC (9.5 Mohs). Sezvo huwandu hwekugadzira huchiwedzera, substrate yeSiC ye12-inch inotarisirwa kuve chiyero cheindasitiri yekushandisa simba guru, ichitungamira hunyanzvi mumotokari, simba rinogona kudzokororwa, uye masisitimu ekushandura simba remaindasitiri.

Tumira email kwatiri

Zvinhu zvirimo

Magadzirirwo ehunyanzvi

12 inch Silicon Carbide (SiC) Substrate Tsanangudzo
Giredhi		Kugadzirwa kweZeroMPD Giredhi (Giredhi Z)	Kugadzirwa Kwakajairika Giredhi (Giredhi reP)		Giredhi reDummy (Giredhi D)
Dhayamita		3 0 0 mm~1305mm
Ukobvu	4H-N	750μm±15 μm	750μm±25 μm
	4H-SI	750μm±15 μm	750μm±25 μm
Kudzidziswa kweWafer		Kudzima axis: 4.0° kuenda ku <1120 >±0.5° ye4H-N, Kudzima axis: <0001>±0.5° ye4H-SI
Kuwanda kwepombi dze micropombi	4H-N	≤0.4cm-2	≤4cm-2		≤25cm-2
	4H-SI	≤5cm-2	≤10cm-2		≤25cm-2
Kuramba	4H-N	0.015~0.024 Ω·cm			0.015~0.028 Ω·cm
	4H-SI	≥1E10 Ω·cm			≥1E5 Ω·cm
Kutungamira Kwakatsetseka Kwepakutanga		{10-10} ±5.0°
Hurefu Hwepamusoro-soro	4H-N	Hazvina kukwana
	4H-SI	Notch
Kusabatanidzwa kweMupendero		3 mm
LTV/TTV/Uta /Warp		≤5μm/≤15μm/≤35 μm/≤55 μm			≤5μm/≤15μm/≤35 □ μm/≤55 □ μm
Kuomarara		ChiPolish Ra≤1 nm
		CMP Ra≤0.2 nm			Ra≤0.5 nm
Mipata yemucheto nechiedza chakasimba Hex Plates Nechiedza Chakanyanya Kusimba Nzvimbo dzePolytype Nechiedza Chakanyanya Kusimba Kubatanidzwa kweKabhoni Inoonekwa Kukwenya Kwepamusoro peSilicon Nechiedza Chakanyanya Kusimba		Hapana Nzvimbo yakaunganidzwa ≤0.05% Hapana Nzvimbo yakaunganidzwa ≤0.05% Hapana			Kureba kwakaunganidzwa ≤ 20 mm, kureba kumwe chete ≤2 mm Nzvimbo yakaunganidzwa ≤0.1% Nzvimbo yakaunganidzwa ≤3% Nzvimbo yakaunganidzwa ≤3% Kureba kwakawedzerwa ≤1 × dhayamita yechinwiwa
Edge Chips Nechiedza Chakanyanya Kusimba		Hapana chinobvumidzwa ≥0.2mm upamhi uye kudzika			7 dzinobvumidzwa, ≤1 mm imwe neimwe
(TSD) Kubviswa kwe threading screw		≤500 cm-2		Hazvina kukwana
(BPD) Kubviswa kwendege yepasi		≤1000 cm-2		Hazvina kukwana
Kusvibiswa kweSilicon pamusoro neHigh Intensity Light		Hapana
Kurongedza		Kaseti yeWafer yakawanda kana mudziyo weWafer imwe chete
Zvinyorwa:
1. Miganhu yekukanganisika inoshanda pamusoro pewafer yese kunze kwenzvimbo isina kuvharwa pamucheto. 2 Mavanga acho anofanira kuongororwa pachiso cheSi chete. 3 Ruzivo rwekubviswa kwechinhu runobva kumawafers eKOH chete.

Zvinhu Zvikuru

1. Kubatsira Kwakakura: Substrate yeSiC ine 12-inch (12-inch silicon carbide substrate) inopa nzvimbo yakakura yewafer imwe chete, zvichiita kuti machipisi akawanda agadziriswe pawafer imwe neimwe, nokudaro zvichideredza mitengo yekugadzira uye kuwedzera goho.
2. Zvinhu Zvinoshanda Nesimba Repamusoro: Kudzivirira kupisa kwakanyanya kwesilicon carbide uye simba guru remunda rinopwanyika zvinoita kuti substrate iyi yemainji gumi nemaviri ive yakakodzera kushandiswa kwemagetsi akawanda uye mafrequency akakwira, akadai semaEV inverters uye masisitimu ekuchaja nekukurumidza.
3. Kuenderana Kwekugadzirisa: Pasinei nekuomarara kwakanyanya uye matambudziko ekugadzirisa eSiC, substrate yeSiC ye 12-inch inoita zvikanganiso zvishoma pamusoro kuburikidza nenzira dzakagadziriswa dzekucheka nekupukuta, zvichivandudza kugona kwemidziyo.
4. Kutarisira Kupisa Kwakanaka: Nekufambiswa kwekupisa kuri nani pane zvinhu zvakagadzirwa nesilicon, substrate iyi ine 12-inch inonyatsogadzirisa kupisa mumidziyo ine simba guru, zvichiita kuti michina irarame kwenguva refu.

Zvikumbiro Zvikuru

1. Mota dzeMagetsi: Substrate yeSiC ine 12-inch (12-inch silicon carbide substrate) chinhu chakakosha chehurongwa hwemagetsi hwechizvarwa chinotevera, zvichigonesa ma inverter anoshanda zvakanyanya anowedzera mafambiro emota uye anoderedza nguva yekuchaja.

2. 5G Base Stations: MaSiC substrates makuru anotsigira michina yeRF ine frequency yakakwira, ichizadzisa zvinodiwa ne5G base stations kuti pave nemagetsi akawanda uye kurasikirwa kwakaderera.

3.Magetsi Emagetsi Emuindasitiri: Muma solar inverters nema smart grids, substrate ye 12-inch inogona kutsungirira voltages yakakwira uku ichideredza kurasikirwa kwesimba.

4. Magetsi Emagetsi Evatengi: Machaja anokurumidza uye magetsi epakati pedata anogona kushandisa ma substrates eSiC ane 12-inch kuti awane saizi diki uye kushanda zvakanaka.

Mabasa eXKH

Isu tine hunyanzvi mukugadzirisa zvinhu zvakagadzirwa nemaoko edu zve 12-inch SiC substrates (12-inch silicon carbide substrates), zvinosanganisira:
1. Kucheka & Kupukuta: Kugadzirisa substrate isina kukuvara zvakanyanya, uye yakapfava zvakanyanya yakagadzirirwa zvinodiwa nevatengi, zvichiita kuti mudziyo ushande zvakanaka.
2. Rutsigiro rweKukura kweEpitaxial: Masevhisi eepitaxial wafer emhando yepamusoro ekukurumidzisa kugadzirwa kwemachipisi.
3. Kugadzira Zvishandiso Zvidiki: Kunotsigira kusimbiswa kweR&D kwemasangano ekutsvagisa nemabhizinesi, zvichipfupisa kutenderera kwebudiriro.
4. Kupa Mazano Ehunyanzvi: Mhinduro dzinobva pakusarudza zvinhu kusvika pakugadzirisa mashandiro, zvichibatsira vatengi kukunda matambudziko ekugadzirisa SiC.
Ingave yekugadzirwa kwezvinhu zvakawanda kana kugadzirisa zvinhu zvakanangana nehunyanzvi, masevhisi edu e12-inch SiC substrate anoenderana nezvinodiwa neprojekiti yako, zvichisimbisa kufambira mberi kwetekinoroji.