12 Inch SiC substrate Diameter 300mm Ukobvu 750μm 4H-N Type inogona kugadzirwa

12 Inch SiC substrate Diameter 300mm Hukobvu 750μm 4H-N Rudzi runogona kugadzirwa Featured Image

Tsanangudzo Pfupi:

Panguva yakaoma mushanduko yeindasitiri yesemiconductor yakanangana nemhinduro dzakasimba uye dzakasimba, kubuda kwe12-inch SiC substrate (12-inch silicon carbide substrate) kwanyatso shandura mamiriro. Kuenzaniswa neyakajairwa 6-inch uye 8-inch yakatarwa, iyo yakakura-saizi mukana we12-inch substrate inowedzera huwandu hwemachipisi anogadzirwa pawafer nekanopfuura mana. Pamusoro pezvo, mutengo wechikamu che12-inch SiC substrate wakaderedzwa ne35-40% zvichienzaniswa neakajairwa 8-inch substrates, izvo zvakakosha pakuwanda kutorwa kwezvigadzirwa zvekupedzisira.
Nekushandisa tekinoroji yedu yekufambisa vapor yekukura tekinoroji, takawana indasitiri-inotungamira kutonga pamusoro pe dislocation density muma12-inch makristasi, ichipa yakasarudzika zvinhu hwaro hwechinotevera kugadzirwa kwemidziyo. Kufambira mberi uku kwakakosha zvakanyanya pakati pekushomeka kwepasi rose kwepasi rose.

Zvishandiso zvemagetsi zvakakosha mumashandisirwo emazuva ese-seEV anokurumidza-kuchaja zviteshi uye 5G base zviteshi-zviri kuwedzera kutora iyi yakakura-saizi substrate. Kunyanya mukupisa-kupisa, kukwira-voltage, nedzimwe nzvimbo dzekushanda dzakaoma, 12-inch SiC substrate inoratidza kugadzikana kwepamusoro-soro kana ichienzaniswa nesilicon-based materials.

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Features

Technical parameters

12 inch Silicon Carbide (SiC) Substrate Kutsanangurwa
Giredhi		ZeroMPD Kugadzirwa Giredhi(Z Giredhi)	Standard Production Giredhi(P Giredhi)		Dummy Grade (D giredhi)
Diameter		3 0 0 mm~1305mm
Ukobvu	4H-N	750μm±15 μm	750μm±25 μm
	4H-SI	750μm±15 μm	750μm±25 μm
Wafer Orientation		Kunze kweaxis : 4.0° yakananga <1120 >±0.5° ye4H-N, Paaxis: <0001>±0.5° ye4H-SI
Micropipe Density	4H-N	≤0.4cm-2	≤4cm-2		≤25cm-2
	4H-SI	≤5cm-2	≤10cm-2		≤25cm-2
Resistivity	4H-N	0.015~0.024 Ω·cm			0.015~0.028 Ω·cm
	4H-SI	≥1E10 Ω·cm			≥1E5 Ω·cm
Yekutanga Flat Oriental		{10-10} ±5.0°
Primary Flat Length	4H-N	N/A
	4H-SI	Notch
Kusabatanidzwa kumucheto		3 mm
LTV/TTV/Bow/Warp		≤5μm/≤15μm/≤35 μm/≤55 μm			≤5μm/≤15μm/≤35 □ μm/≤55 □ μm
Kukasharara		Polish Ra≤1 nm
		CMP Ra≤0.2 nm			Ra≤0.5 nm
Edge Cracks By High Intensity Chiedza Hex Plates By High Intensity Chiedza Polytype Nzvimbo NeKusimba Kwakanyanya Chiedza Visual Carbon Inclusions Silicon Surface Scratches By High Intensity Chiedza		Hapana Cumulative area ≤0.05% Hapana Cumulative area ≤0.05% Hapana			Cumulative kureba ≤ 20 mm, single kureba≤2 mm Cumulative area ≤0.1% Cumulative area≤3% Yakawedzerwa nzvimbo ≤3% Cumulative kureba≤1×wafer dhayamita
Edge Chips By High Intensity Chiedza		Hapana anotenderwa ≥0.2mm hupamhi nekudzika			7 inotenderwa, ≤1 mm imwe neimwe
(TSD) Threading screw dislocation		≤500 cm-2		N/A
(BPD) Base plane dislocation		≤1000 cm-2		N/A
Silicon Surface Kusvibiswa NeKunyanya Kusimba Chiedza		Hapana
Packaging		Multi-wafer Cassette Kana Single Wafer Container
Notes:
1 Miganho yekuremara inoshanda kune yese wafer pamusoro kunze kweiyo yekumucheto nzvimbo yekusarudzika. 2Kukwenya kunofanirwa kutariswa paSi face chete. 3 Iyo dislocation data inongobva kuKOH etched wafers.

Key Features

1.Kukwanisa Kugadzira uye Kukosha Kwemari: Kugadzirwa kwehuwandu hwe12-inch SiC substrate (12-inch silicon carbide substrate) inoratidza nguva itsva mukugadzira semiconductor. Huwandu hwemachipisi anowanikwa kubva kune imwechete wafer inosvika 2.25 nguva iyo ye8-inch substrates, ichityaira zvakanangana nekusvetuka mukugadzira kuita. Mhinduro yemutengi inoratidza kuti kutora 12-inch substrates kwakadzikisa mutengo wekugadzira ma module emagetsi ne28%, zvichigadzira mukana wakajeka wemakwikwi mumusika unokwikwidza zvakanyanya.
2.Outstanding Physical Properties: Iyo 12-inch SiC substrate inogara nhaka zvese zvakanakira silicon carbide zvinhu - yayo yekupisa conductivity ndeye 3 nguva yesilicon, nepo kuparara kwayo kwemunda kunosvika ka10 kune iyo silicon. Aya maitiro anogonesa michina yakavakirwa pa12-inch substrates kuti ishande zvakatsiga munzvimbo dzekupisa kwepamusoro-soro inopfuura 200 ° C, zvichiita kuti dzinyatsokodzera maapplication arikuda akadai semotokari dzemagetsi.
3.Surface Treatment Technology: Takagadzira inoveli yemakemikari mechanical polishing (CMP) maitiro anonyatso 12-inch SiC substrates, kubudirira atomic-level surface flatness (Ra <0.15nm). Kubudirira uku kunogadzirisa dambudziko repasi rose rehombe-diameter silicon carbide wafer pamusoro pekurapa, kubvisa zvipingamupinyi zvemhando yepamusoro epitaxial kukura.
4.Thermal Management Performance: Mumashandisirwo anoshanda, 12-inch SiC substrates inoratidza inoshamisa yekubvisa kupisa kugona. Data yekuyedza inoratidza kuti pasi pesimba rakafanana remagetsi, zvishandiso zvinoshandisa 12-inch substrates zvinoshanda patembiricha 40-50 ° C yakaderera pane silicon-based zvishandiso, zvakanyanya kuwedzera hupenyu hwesevhisi yemidziyo.

Main Applications

1.New Energy Vehicle Ecosystem: Iyo 12-inch SiC substrate (12-inch silicon carbide substrate) iri kushandura magetsi emotokari powertrain architecture. Kubva pane majaja epaboard (OBC) kuenda kuma main drive inverters uye mabhatiri manejimendi masisitimu, kuvandudzwa kwakanaka kunounzwa ne12-inch substrates kunowedzera mota ne5-8%. Mishumo kubva kune anotungamira automaker inoratidza kuti kutora yedu 12-inch substrates kwakaderedza kurasikirwa kwesimba muhurongwa hwavo hwekuchaja nekukurumidza ne62%.
2.Renewable Energy Sector: Mumagetsi emagetsi e photovoltaic, inverters inobva pa 12-inch SiC substrates haingoratidzi maitiro maduku maduku asiwo inobudirira kutendeuka kunopfuura 99%. Kunyanya muzviitiko zvechizvarwa chakagoverwa, uku kushanda kwepamusoro kunodudzira kuchengetwa kwepagore kwemazana ezviuru zveyuan mukurasikirwa kwemagetsi kune vanoshanda.
3.Industrial Automation: Frequency converters inoshandisa 12-inch substrates inoratidza kushanda kwakanakisisa mumarobhoti emaindasitiri, CNC muchina zvishandiso, uye zvimwe midziyo. Yavo yepamusoro-frequency switching maitiro anovandudza mota yekupindura kumhanya ne30% uku ichidzikisa kukanganiswa kwemagetsi kune chimwe muzvitatu chezvigadziriso.
4.Consumer Electronics Innovation: Inotevera-chizvarwa smartphone inokurumidza-charging technologies yakatanga kutora 12-inch SiC substrates. Zvinofungidzirwa kuti zvigadzirwa zvinokurumidza-kuchaja pamusoro pe65W zvichachinja zvizere kune silicon carbide mhinduro, ine 12-inch substrates iri kubuda seyakanyanya kudhura-kuita sarudzo.

XKH Yakagadzirirwa Masevhisi e12-inch SiC Substrate

Kuti isangane nezvinodiwa zve12-inch SiC substrates (12-inch silicon carbide substrates), XKH inopa yakazara sevhisi rutsigiro:
1.Thickness Customization:
Isu tinopa 12-inch substrates mune akasiyana ukobvu maratidziro anosanganisira 725μm kusangana nezvinodiwa zvakasiyana zvekushandisa.
2. Doping concentration:
Yedu yekugadzira inotsigira akawanda conductivity marudzi anosanganisira n-mhando uye p-mhando substrates, ine chaiyo resistivity control muhuwandu hwe0.01-0.02Ω · cm.
3.Testing Services:
Iine yakazara wafer-level yekuyedza michina, isu tinopa yakazara yekuongorora mishumo.
XKH inonzwisisa kuti mutengi wega wega ane zvakasarudzika zvinodiwa zve12-inch SiC substrates. Naizvozvo isu tinopa anochinjika bhizinesi ekudyidzana modhi kuti ipe mhinduro dzakanyanya kukwikwidza, kungave kwe:
· R&D samples
· Volume kugadzira kutenga
Masevhisi edu akagadziridzwa anovimbisa kuti tinokwanisa kusangana neyako chaiyo yehunyanzvi uye yekugadzira zvinodiwa zve12-inch SiC substrates.