12 Inch SiC substrate Dhayamita 300mm Ukobvu 750μm 4H-N Rudzi runogona kugadziriswa

Tsananguro pfupi:

Panguva yakakosha mukushanduka kweindasitiri ye semiconductor kuenda kune mhinduro dzinoshanda uye dzakasimba, kubuda kwe 12-inch SiC substrate (12-inch silicon carbide substrate) kwakachinja mamiriro ezvinhu zvakanyanya. Zvichienzaniswa nemaitiro echinyakare e 6-inch ne 8-inch, mukana mukuru we 12-inch substrate unowedzera huwandu hwemachipisi anogadzirwa pa wafer nekanopfuura kana. Pamusoro pezvo, mutengo weyuniti ye 12-inch SiC substrate wakaderedzwa ne35-40% zvichienzaniswa ne 8-inch substrates dzakajairika, izvo zvakakosha kuti zvigadzirwa zvekupedzisira zvishandiswe zvakanyanya.
Nekushandisa tekinoroji yedu yekukura kwekufambisa utsi, tawana simba guru muindasitiri pamusoro pekuwanda kwemakristaro e12-inch, zvichipa hwaro hwakanaka hwekugadzira michina inotevera. Kufambira mberi uku kwakakosha zvikuru pakati pekushaikwa kwemachipisi pasi rose.

Midziyo yemagetsi inokosha mukushandiswa kwezuva nezuva—senge nzvimbo dzekuchaja nekukurumidza dzeEV ne5G base stations—iri kuramba ichishandisa substrate iyi yakakura. Kunyanya munzvimbo dzinopisa zvakanyanya, dzine voltage yakawanda, uye dzimwe nzvimbo dzakaoma dzekushanda, substrate ye12-inch SiC inoratidza kugadzikana kwakanyanya kana tichienzanisa nezvinhu zvakagadzirwa nesilicon.

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12 inch Silicon Carbide (SiC) Substrate Tsanangudzo
Giredhi		Kugadzirwa kweZeroMPD Giredhi (Giredhi Z)	Kugadzirwa Kwakajairika Giredhi (Giredhi reP)		Giredhi reDummy (Giredhi D)
Dhayamita		3 0 0 mm~1305mm
Ukobvu	4H-N	750μm±15 μm	750μm±25 μm
	4H-SI	750μm±15 μm	750μm±25 μm
Kudzidziswa kweWafer		Kudzima axis: 4.0° kuenda ku <1120 >±0.5° ye4H-N, Kudzima axis: <0001>±0.5° ye4H-SI
Kuwanda kwepombi dze micropombi	4H-N	≤0.4cm-2	≤4cm-2		≤25cm-2
	4H-SI	≤5cm-2	≤10cm-2		≤25cm-2
Kuramba	4H-N	0.015~0.024 Ω·cm			0.015~0.028 Ω·cm
	4H-SI	≥1E10 Ω·cm			≥1E5 Ω·cm
Kutungamira Kwakatsetseka Kwepakutanga		{10-10} ±5.0°
Hurefu Hwepamusoro-soro	4H-N	Hazvina kukwana
	4H-SI	Notch
Kusabatanidzwa kweMupendero		3 mm
LTV/TTV/Uta /Warp		≤5μm/≤15μm/≤35 μm/≤55 μm			≤5μm/≤15μm/≤35 □ μm/≤55 □ μm
Kuomarara		ChiPolish Ra≤1 nm
		CMP Ra≤0.2 nm			Ra≤0.5 nm
Mipata yemucheto nechiedza chakasimba Hex Plates Nechiedza Chakanyanya Kusimba Nzvimbo dzePolytype Nechiedza Chakanyanya Kusimba Kubatanidzwa kweKabhoni Inoonekwa Kukwenya Kwepamusoro peSilicon Nechiedza Chakanyanya Kusimba		Hapana Nzvimbo yakaunganidzwa ≤0.05% Hapana Nzvimbo yakaunganidzwa ≤0.05% Hapana			Kureba kwakaunganidzwa ≤ 20 mm, kureba kumwe chete ≤2 mm Nzvimbo yakaunganidzwa ≤0.1% Nzvimbo yakaunganidzwa ≤3% Nzvimbo yakaunganidzwa ≤3% Kureba kwakawedzerwa ≤1 × dhayamita yechinwiwa
Edge Chips Nechiedza Chakanyanya Kusimba		Hapana chinobvumidzwa ≥0.2mm upamhi uye kudzika			7 dzinobvumidzwa, ≤1 mm imwe neimwe
(TSD) Kubviswa kwe threading screw		≤500 cm-2		Hazvina kukwana
(BPD) Kubviswa kwenzvimbo yendege yepasi		≤1000 cm-2		Hazvina kukwana
Kusvibiswa kweSilicon pamusoro neHigh Intensity Light		Hapana
Kurongedza		Kaseti yeWafer yakawanda kana mudziyo weWafer imwe chete
Zvinyorwa:
1. Miganhu yekukanganisika inoshanda pamusoro pewafer yese kunze kwenzvimbo isina kuvharwa pamucheto. 2 Mavanga acho anofanira kuongororwa pachiso cheSi chete. 3 Ruzivo rwekubviswa kwechinhu runobva kumawafers eKOH chete.

Zvinhu Zvikuru

1. Kugona Kugadzira uye Zvakanakira Mari: Kugadzirwa kwe12-inch SiC substrate (12-inch silicon carbide substrate) kwave nguva itsva mukugadzirwa kwema semiconductor. Huwandu hwemachipisi anowanikwa kubva muwafer imwe chete hunosvika ka2.25 kupfuura hwe8-inch substrates, zvichikonzera kukurumidza kushanda zvakanaka kwekugadzira. Mhinduro dzevatengi dzinoratidza kuti kushandisa 12-inch substrates kwaderedza mitengo yavo yekugadzira power module ne28%, zvichigadzira mukana wekukwikwidza mumusika une makwikwi makuru.
2. Hunhu Hwakanaka: Substrate yeSiC ine 12-inch inogara nhaka mabhenefiti ese esilicon carbide material - kupisa kwayo kwakapetwa katatu kupfuura silicon, nepo simba rayo rekupwanyika richisvika gumi kupfuura silicon. Hunhu uhu hunobvumira michina yakavakirwa pa12-inch substrates kushanda zvakadzikama munzvimbo dzinopisa zvakanyanya kupfuura 200°C, zvichiita kuti dzinyatsokodzera kushandiswa kwakadai semotokari dzemagetsi.
3. Tekinoroji Yekurapa Pamusoro: Takagadzira nzira itsva yekuchenesa michina yemakemikari (CMP) yakanangana ne12-inch SiC substrates, zvichiita kuti pave neatomu-level surface flatness (Ra<0.15nm). Kubudirira uku kunogadzirisa dambudziko repasi rose rekurapa pamusoro pesilicon carbide wafer ine dhayamita yakakura, zvichibvisa zvipingamupinyi zvekukura kwe epitaxial kwepamusoro.
4. Kushanda Kwekutarisira Kupisa: Mukushandiswa kunoshanda, ma substrate eSiC ane 12-inch anoratidza kugona kukuru kwekuparadza kupisa. Ruzivo rwekuyedza runoratidza kuti pasi pesimba rakafanana, zvishandiso zvinoshandisa ma substrate ane 12-inch zvinoshanda patembiricha yakaderera 40-50°C pane zvishandiso zvakagadzirwa nesilicon, zvichiwedzera hupenyu hwebasa remuchina zvakanyanya.

Zvikumbiro Zvikuru

1.Sisitimu Itsva Yemagetsi Emota: Substrate yeSiC ine 12-inch (12-inch silicon carbide substrate) iri kuchinja magadzirirwo emagetsi emota. Kubva pakuchaja mota dziri mundege (OBC) kusvika kumain drive inverters nemasystem ekugadzirisa mabhatiri, kuvandudzwa kwekushanda zvakanaka kunounzwa ne12-inch substrates kunowedzera huwandu hwemota ne5-8%. Mishumo kubva kumugadziri wemotokari anotungamira inoratidza kuti kushandisa substrates dzedu dze12-inch kwakaderedza kurasikirwa kwesimba musystem yavo yekuchaja nekukurumidza ne62%.
2. Chikamu Chesimba Rinodzoreredzwa: Muzviteshi zvemagetsi zve photovoltaic, ma inverter akavakirwa pa 12-inch SiC substrates haangove ne diki chete asiwo anowana kushanduka kunodarika 99%. Kunyanya mukugadzirwa kwakapararira, kushanda uku kwakanyanya kunoshandura kuchengetedza kwegore negore kwemazana ezviuru zve yuan mukurasikirwa kwemagetsi kune vanoshanda.
3.Industrial Automation: Ma Frequency converters anoshandisa 12-inch substrates anoratidza kushanda kwakanaka mumarobhoti emaindasitiri, maturusi eCNC machine, nezvimwe zvishandiso. Hunhu hwavo hwe high-frequency switching hunovandudza kumhanya kwemota ne30% ukuwo huchideredza kupindirana kwemagetsi kusvika pachikamu chimwe muzvitatu chemhinduro dzemazuva ese.
4. Kuvandudzwa Kwemagetsi Evatengi: Tekinoroji dzemafoni echizvarwa chinotevera dzekuchaja nekukurumidza dzatanga kushandisa ma substrate eSiC e12-inch. Zvinofungidzirwa kuti zvigadzirwa zvekuchaja nekukurumidza zvinopfuura 65W zvichachinja zvizere kuita silicon carbide solutions, ne12-inch substrate dzichiva sarudzo yakanakisisa yekushanda zvakanaka.

Masevhisi Akagadzirirwa XKH e12-inch SiC Substrate

Kuti isvike pazvinodiwa zve12-inch SiC substrates (12-inch silicon carbide substrates), XKH inopa rutsigiro rwakakwana rwebasa:
1.Kugadzirisa Hukobvu:
Tinopa ma substrates ane 12-inch mumhando dzakasiyana-siyana dzehukobvu kusanganisira 725μm kuti tikwanise kusangana nezvinodiwa zvakasiyana zvekushandisa.
2.Kushandisa zvinodhaka zvakanyanya:
Kugadzira kwedu kunotsigira mhando dzakasiyana dze conductivity dzinosanganisira substrates dzemhando ye n ne p, ne resistivity control chaiyo iri pakati pe 0.01-0.02Ω·cm.
3. Mabasa Ekuyedza:
Nemichina yakakwana yekuyedza yewafer, tinopa mishumo yakazara yekuongorora.
XKH inonzwisisa kuti mutengi wega wega ane zvinodiwa zvakasiyana zve12-inch SiC substrates. Saka tinopa mamodheru ekushandira pamwe ebhizinesi anochinjika kuti tipe mhinduro dzinokwikwidzana zvikuru, kungave kune:
· Mienzaniso yeR&D
· Kutenga huwandu hwezvigadzirwa
Mabasa edu akagadzirwa nemaoko anoita kuti tikwanise kusangana nezvinodiwa zvenyu zvehunyanzvi uye zvekugadzira zve12-inch SiC substrates.