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Wafer ine 12-Inch 4H-SiC yemagirazi eAR

Wafer ine 12-Inch 4H-SiC yemagirazi eAR Mufananidzo Wakaratidzwa
  • Wafer ine 12-Inch 4H-SiC yemagirazi eAR
  • Wafer ine 12-Inch 4H-SiC yemagirazi eAR
  • Wafer ine 12-Inch 4H-SiC yemagirazi eAR
  • Wafer ine 12-Inch 4H-SiC yemagirazi eAR
  • Wafer ine 12-Inch 4H-SiC yemagirazi eAR

Tsananguro pfupi:

IyoSubstrate ine simba re 4H-SiC (silicon carbide) ine 12-inch conductiveiwafer ye semiconductor yakakura kwazvo ine dhayamita yakafara, yakagadzirirwa chizvarwa chinotevera.ine voltage yakakwira, simba rakakwirira, frequency yakakwira, uye tembiricha yakakwirakugadzira magetsi emagetsi. Kushandisa zvakanakira zveSiC—zvakadai semunda wemagetsi unonyanya kukosha, kumhanya kwakanyanya kwemaerekitironi akazara, kupisa kwakanyanyauyekugadzikana kwakanaka kwemakemikari—chigadzirwa ichi chakaiswa sechishandiso chekutanga chemidziyo yemagetsi yepamusoro uye mashandisirwo matsva ewafer munzvimbo huru.


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Wafer ine 12-Inch 4H-SiC
Wafer ine 12-Inch 4H-SiC

Pfupiso

IyoSubstrate ine simba re 4H-SiC (silicon carbide) ine 12-inch conductiveiwafer ye semiconductor yakakura kwazvo ine dhayamita yakafara, yakagadzirirwa chizvarwa chinotevera.ine voltage yakakwira, simba rakakwirira, frequency yakakwira, uye tembiricha yakakwirakugadzira magetsi emagetsi. Kushandisa zvakanakira zveSiC—zvakadai semunda wemagetsi unonyanya kukosha, kumhanya kwakanyanya kwemaerekitironi akazara, kupisa kwakanyanyauyekugadzikana kwakanaka kwemakemikari—chigadzirwa ichi chakaiswa sechishandiso chekutanga chemidziyo yemagetsi yepamusoro uye mashandisirwo matsva ewafer munzvimbo huru.

Kugadzirisa zvinodiwa neindasitiri yese yekuderedza mitengo uye kuvandudza kugadzirwa, kuchinja kubva pakuva chinhu chikuru6–8 inches SiC to 12-inch SiCZvishandiso zvepasi zvinozivikanwa zvakanyanya senzira huru. Wafer ye 12-inch inopa nzvimbo yakakura zvikuru inoshandiswa kupfuura mafomati madiki, zvichiita kuti pave nekubuda kwakawanda kwewafer imwe neimwe, kushandiswa kwewafer kwakavandudzwa, uye kuderedzwa kwehuwandu hwekurasikirwa kwemucheto—zvichitsigira kugadziriswa kwemari yekugadzira muketani yese yekugovera.

Nzira yekukura kwekristaro nekugadzira wafer

 

Iyi substrate ye4H-SiC inofambisa ine 12-inch inogadzirwa kuburikidza nekuvhara kwecheni yakazarakukura kwembeu, kukura kwekristaro imwe chete, kuonda, kutetepa, uye kupukuta, vachitevera tsika dzakajairwa dzekugadzira semiconductor:

 

  • Kukura kwembeu nePhysical Vapor Transport (PVT):
    A 12-inch4H-SiC mbeu yekristaroinowanikwa kuburikidza nekuwedzera dhayamita uchishandisa nzira yePVT, zvichiita kuti kukura kunotevera kwemaboules e4H-SiC ane 12-inch conductive.

  • Kukura kwekristaro imwe chete ye4H-SiC inofambisa mhepo:
    Kufambisan⁺ 4H-SiCkukura kwekristaro imwe chete kunowanikwa nekuisa nitrogen mumhepo inokonzera kukura kuti ipe doping inodzorwa nevanopa mishonga.

  • Kugadzira wafer (kugadzirisa semiconductor yakajairika):
    Mushure mekuumbwa kweboule, mawafer anogadzirwa kuburikidzakucheka nelaser, ichiteverwa nakutetepa, kupukuta (kusanganisira kupedzisa CMP-level), uye kuchenesa.
    Ukobvu hwe substrate hunobuda ndi560 μm.

 

Nzira iyi yakabatanidzwa yakagadzirirwa kutsigira kukura kwakasimba padhayamita yakakura kwazvo ukuwo ichichengetedza kusimba kwekristaro uye hunhu hwemagetsi hwakafanana.

 

chifukidziro 9

 

Kuti ive nechokwadi chekuongororwa kwakazara kwemhando, substrate inoonekwa uchishandisa musanganiswa wezvishandiso zvekuongorora zvivakwa, zvemaziso, zvemagetsi, uye zvekuongorora zvikanganiso:

 

  • Raman spectroscopy (kumepu yenzvimbo):kusimbiswa kwekufanana kwemhando yepolytype pane wafer

  • Maikorosikopu yemaziso inozvishandira yoga (wafer mapping):kuonekwa uye kuongororwa kwenhamba dzema micropopes

  • Kuyera kwemamiriro ekunze asingasanganisike (kuyera mapeji ewafer):kugoverwa kwekudzivirira panzvimbo dzakawanda dzekuyera

  • Kupenya kweX-ray (HRXRD) ine resolution yepamusoro:kuongororwa kwemhando yekristaro kuburikidza nekuyera curve inotenderera

  • Kuongororwa kwe dislocation (mushure mekuchekwa kwekusarudza):kuongororwa kwehuwandu hwe dislocation uye morphology (tichinyanya kusimbisa dislocations dze screws)

 

chifukidziro 10

Mhedzisiro Yekushanda Kwakakosha (Mumiririri)

Mhedzisiro yehunhu inoratidza kuti substrate ye4H-SiC ine 12-inch conductive inoratidza kunaka kwakasimba kwezvinhu muzvikamu zvakakosha:

(1) Kuchena uye kufanana kwemhando yePolytype

  • Kuratidzwa kwemepu yenzvimbo yeRamanKufukidzwa kwemhando yepolytype ye4H-SiC 100%pamusoro pe substrate.

  • Hapana kuwanikwa kwemamwe marudzi epolytype (semuenzaniso, 6H kana 15R), zvichiratidza kutonga kwakanaka kwepolytype pachiyero che 12-inch.

(2) Kuwanda kwemapombi e micropope (MPD)

  • Kugadzira mamepu e microscopy yewafer-scale kunoratidzakuwanda kwepombi dze micropombi < 0.01 cm⁻², zvichiratidza kudziviswa kunobudirira kwechikamu ichi chinoganhurira zvikanganiso zvemudziyo.

(3) Kusagona kwemagetsi uye kufanana

  • Kugadzira mamepu ekudzivirira kubatwa kwechinhu (kuyera 361-point) kunoratidza:

    • Resistivity range:20.5–23.6 mΩ·cm

    • Avhareji yekudzivirira:22.8 mΩ·cm

    • Kusafanana:< 2%
      Mhedzisiro iyi inoratidza kuenderana kwakanaka kwekushandiswa kwedopant uye kufanana kwemagetsi kwakanaka kwewafer-scale.

(4) Hunhu hwemakristalo (HRXRD)

  • Kuyerwa kwe HRXRD rocking curve pa(004) kuratidzwa, yakatorwa pamapoinzi mashanunedivi rewafer dhayamita, ratidza:

    • Mapoka madiki, anenge akafanana asi asina maitiro ekukwirira kwakawanda, zvichiratidza kusavapo kwezvikamu zvemuganhu wegorosi wakaderera.

    • Avhareji yeFWHM:20.8 arcsec (″), zvichiratidza kuti girazi rayo rakaita sekristaro.

(5) Kuwanda kwe screw dislocation (TSD)

  • Mushure mekusarudza etching uye otomatiki scanning, iyokuwanda kwe dislocation ye screwinoyerwa pa2 cm⁻², zvichiratidza TSD yakaderera pachiyero che 12-inch.

Mhedziso kubva mumhedzisiro iri pamusoro:
Iyo substrate inoratidzakuchena kwemhando ye4H polytype kwakanaka kwazvo, huwandu hwakanyanya kuderera hwema micropipe, kusimba kwakadzikama uye kwakafanana, mhando yakasimba yekristalline, uye huwandu hwakaderera hwe screw dislocation, zvichitsigira kukodzera kwayo kugadzirwa kwemidziyo yepamusoro.

Kukosha Kwechigadzirwa uye Zvakanakira

  • Inobvumira kutamiswa kwekugadzirwa kweSiC ye12-inch
    Inopa puratifomu yepamusoro-soro inoenderana negwara reindasitiri rekugadzira mawafer eSiC ane 12-inch.

  • Kuwanda kwezvikanganiso zvishoma kuti mudziyo uve nani uye wakavimbika
    Kuwanda kwema micropipe akaderera zvakanyanya uye kuderera kwekupararira kwema screws kunobatsira kuderedza nzira dzekurasikirwa negoho zvakanyanya uye dzine njodzi.

  • Kufanana kwakanaka kwemagetsi kuti maitiro agare zvakanaka
    Kugoverwa kwakasimba kwesimba rekudzivirira kunotsigira kuvandudzwa kwewafer kubva pawafer kuenda pawafer uye kugadzikana kwemuchina wewafer mukati mewafer.

  • Hunhu hwepamusoro hwekristaro hunotsigira epitaxy uye kugadzirisa michina
    Zvakawanikwa neHRXRD uye kusavapo kwezviratidzo zvemuganhu wegorosi zvakaderera zvinoratidza kuti zvinhu zvakanaka pakukura kwe epitaxial uye kugadzirwa kwemidziyo.

 

Zvikumbiro Zvakanangwa

Substrate ine simba re 4H-SiC ine 12-inch inoshanda kune:

  • Zvishandiso zveSiC zvemagetsi:MOSFET, Schottky barrier diodes (SBD), uye maumbirwo akafanana

  • Mota dzemagetsi:main traction inverters, ma inverters ari mundege (OBC), uye ma converters eDC-DC

  • Simba rinodzokororwa uye grid:ma inverter e photovoltaic, masisitimu ekuchengetedza simba, uye ma module e grid akangwara

  • Magetsi emagetsi emaindasitiri:magetsi anoshanda zvakanyanya, madhiraivha emota, uye ma converter ane simba guru

  • Zvinodiwa zvewafer munzvimbo huru zviri kubuda:kurongedza kwepamusoro uye zvimwe zviitiko zvekugadzira semiconductor zvinoenderana ne12-inch

 

Mibvunzo Inowanzo bvunzwa - Substrate ye4H-SiC ine 12-Inch Conductive

Mubvunzo 1. Chii chinonzi substrate yeSiC chigadzirwa ichi?

A:
Chigadzirwa ichi12-inch conductive (n⁺-type) 4H-SiC single-crystal substrate, inorimwa nenzira yePhysical Vapor Transport (PVT) uye inogadziriswa uchishandisa nzira dzakajairwa dze semiconductor wafering.

Mubvunzo wechipiri. Sei 4H-SiC yakasarudzwa se polytype?

A:
4H-SiC inopa musanganiswa wakanakisa wekufamba kwemaerekitironi akawanda, gap rakafara, nzvimbo yakapwanyika yakawanda, uye kupisa kunofambiswapakati pemhando dzeSiC dzakakosha mukutengeserana. Ndiyo mhando huru inoshandiswa pakugadziramidziyo yeSiC ine simba guru uye ine voltage yakawanda, dzakadai seMOSFETs uye Schottky diodes.

Mubvunzo 3. Ndezvipi zvakanakira zvekuchinja kubva pa 8-inch kuenda ku 12-inch SiC substrates?

A:
Wafer yeSiC ine 12-inch inopa:

  • Zvinokoshanzvimbo yakakura inoshandiswa

  • Kubuda kwepamusoro kwe die pa wafer imwe neimwe

  • Chiyero chekurasikirwa kwemucheto-kuderera

  • Kuenderana kwakagadziridzwa nemitsetse yepamusoro yekugadzira semiconductor ye 12-inch

Zvinhu izvi zvinobatsira zvakananga kumutengo wakaderera pamudziyo wega wegauye kushanda zvakanaka kwekugadzira.

Nezvedu

XKH inonyanya kugadzira, kugadzira, uye kutengesa magirazi egirazi egirazi uye zvinhu zvitsva zvekristaro. Zvigadzirwa zvedu zvinopa zvigadzirwa zvemagetsi, zvemagetsi zvevatengi, uye zvemauto. Tinopa zvikamu zveSapphire optical, malenzi efoni, Ceramics, LT, Silicon Carbide SIC, Quartz, uye mawafer egirazi esemiconductor. Tine hunyanzvi uye michina yemazuva ano, tinobudirira mukugadzirisa zvigadzirwa zvisiri zvemazuva ano, tichivavarira kuva bhizinesi rinotungamira rezvigadzirwa zvemagetsi.

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