SiC Ceramic Tray End Effector Wafer Inobata Tsika-Yakagadzirwa Zvikamu

Tsanangudzo Pfupi

Typical properties	Units	Values
Chimiro		FCC β chikamu
Orientation	Chikamu (%)	111 zvakasarudzwa
Bulk density	g/cm³	3.21
Kuoma	Vickers kuoma	2500
Heat Capacity	J·kg⁻¹·K⁻¹	640
Kuwedzera kupisa kwe100–600 °C (212–1112 °F)	10⁻⁶·K⁻¹	4.5
Young's Modulus	GPA (4pt bend, 1300°C)	430
Saizi yezviyo	μm	2~10
Sublimation Temperature	°C	2700
Flexural Strength	MPa (RT 4-poindi)	415
Thermal conductivity	(W/mK)	300

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Features

SiC Ceramic & Alumina Ceramic Custom Components Pfupi

Silicon Carbide (SiC) Ceramic Tsika Zvikamu

Silicon Carbide (SiC) ceramic tsika zvikamu ndeyepamusoro-inoshanda maindasitiri eceramic zvinhu zvinozivikanwa nokuda kwavo.kuomarara kwakanyanya, kugadzikana kwekupisa kwakanyanya, kusarudzika corrosion resistance, uye high thermal conductivity.. Silicon Carbide (SiC) ceramic tsika zvikamu zvinogonesa kuchengetedza kugadzikana kwechimiro mukatinharaunda dzekudziya kwepamusoro uchiramba kukukurwa kubva kune yakasimba acids, alkalis, uye simbi dzakanyungudutswa.. SiC ceramics inogadzirwa kuburikidza nemaitiro akadaikusamanikidzika kuridza, kuita sintering, kana kupisa-kuridza sinteringuye inogona kugadzirwa kuita maumbirwo akaomarara, anosanganisira mechanical seal mhete, shaft maoko, nozzles, machubhu echoto, mabhoti ewafer, uye mahwendefa asingapfekeri.

Alumina Ceramic Custom Components

Alumina (Al₂O₃) ceramic tsika zvikamu zvinosimbisahigh insulation, yakanaka mechanical simba, uye kupfeka kuramba. Yakarongedzerwa nekuchena mamakisi (semuenzaniso, 95%, 99%), Alumina (Al₂O₃) ceramic tsika zvikamu zvine chaiyo machining inovabvumira kugadzirwa kuita insulators, mabearings, maturusi ekucheka, uye maimplants ekurapa. Alumina ceramics inonyanya kugadzirwa kuburikidzayakaoma kudzvanya, jekiseni kuumba, kana isostatic kudzvanya maitiro, dzine nzvimbo dzinopenya kusvika pakupera kwegirazi.

XKH inyanzvi muR&D uye tsika kugadzirwa kwesilicon carbide (SiC) uye alumina (Al₂O₃) ceramics. Zvigadzirwa zveSiC ceramic zvinotarisisa kudziya kwepamusoro-soro, kupfekedzwa kwepamusoro-soro, uye nharaunda inoparadza, inovhara semiconductor application (semuenzaniso, zvikepe zvewaferi, cantilever paddles, machubhu echoto) pamwe nezvinopisa zvemunda uye zvisimbiso zvepamusoro zvezvikamu zvesimba idzva. Zvigadzirwa zveAlumina ceramic zvinosimbisa insulation, kuvhara, uye biomedical zvivakwa, zvinosanganisira zvemagetsi substrates, mechanical seal rings, uye mishonga yekurapa. Kushandisa matekinoroji akadaiisostatic kudzvanya, kusagadzikana sintering, uye chaiyo machining, isu tinopa yakakwirira-yekuita yakagadziridzwa mhinduro kune maindasitiri anosanganisira semiconductors, photovoltaics, aerospace, kurapwa, uye makemikari kugadzirisa, kuve nechokwadi kuti zvikamu zvinosangana zvakaomesesa zvinodiwa zvekunyatso, hupenyu hurefu, uye kuvimbika mumamiriro akanyanya.

SiC Ceramic Inoshanda Chucks & CMP Kukuya Madhisiki Sumo

SiC Ceramic Vacuum Chucks

Silicon Carbide (SiC) Ceramic Vacuum Chucks ndeyepamusoro-chaiyo adsorption maturusi anogadzirwa kubva kumusoro-inoshanda silicon carbide (SiC) ceramic zvinhu. Iwo akagadzirirwa chaizvo maapplication anoda kuchena kwakanyanya uye kugadzikana, semiconductor, photovoltaic, uye maindasitiri ekugadzira chaiwo. Mabhenefiti avo akakosha anosanganisira: girazi-level yakakwenenzverwa nzvimbo (kufuratira kunodzorwa mukati me 0.3-0.5 μm), kuomarara kwepamusoro-soro uye kuderera kwekuwedzera kwekupisa kwemafuta (kuve nechokwadi chekuti nano-level chimiro uye kugadzikana kwechinzvimbo), chimiro chakareruka zvakanyanya (kunyanya kudzikamisa kusimba) kusvika 9.5, inodarika nguva yehupenyu hwesimbi chucks) . Izvi zvivakwa zvinogonesa kushanda kwakadzikama munzvimbo dzine tembiricha yakakwira uye yakaderera, kusimba kwakasimba, uye kubata-kumhanya-mhanya, zvakanyanya kuvandudza goho rekugadzira uye kugona kwekugadzira kwezvakajeka zvinhu senge wafers uye optical elements.

Silicon Carbide (SiC) Bump Vacuum Chuck yeMetrology uye Kuongorora

Yakagadzirirwa mawafer defect yekuongorora maitiro, iyi yakakwirira-chaiyo adsorption chishandiso inogadzirwa kubva kusilicon carbide (SiC) ceramic zvinhu. Yayo yakasarudzika yepasi bump chimiro inopa ine simba vacuum adsorption simba, uku ichideredza nzvimbo yekubatana newafer, nekudaro kudzivirira kukuvadzwa kana kusvibiswa kune wafer pamusoro uye kuve nechokwadi kugadzikana uye iko kurongeka panguva yekuongorora. Iyo chuck inoratidzira kudzikama kwakasarudzika (0.3-0.5 μm) uye nzvimbo yakakwenenzverwa girazi, yakasanganiswa nehuremu hwekupedzisira, uye kuomarara kwepamusoro, kuve nechokwadi kugadzikana panguva yekumhanya-mhanya. Yakanyanya kuderera coefficient yekuwedzera kwemafuta, inovimbisa kugadzikana kwedimensional pasi pekuchinja kwekushisa, nepo kusamira kwakasimba kwekupfeka kunowedzera hupenyu hwesevhisi. Chigadzirwa chinotsigira kugadziridzwa mu6, 8, uye 12-inch yakatarwa, kusangana nezvinodiwa zvekuongorora zveakasiyana saizi saizi.

Flip Chip Bonding Chuck

Iyo flip chip bonding chuck chinhu chakakosha mu chip flip-chip bonding maitiro, akagadzirirwa chaizvo adsorbing wafers, kuve nechokwadi kugadzikana panguva yekumhanya-mhanya, yakakwirira-chaiyo bonding mashandiro. Iyo ine girazi-yakakwenenzverwa pamusoro (kufuratira/kufanana ≤1 μm) uye chaiyo gasi chiteshi grooves, kuwana yunifomu vacuum adsorption simba, kudzivirira wafer kutamiswa kana kukuvara. Kuomarara kwayo kwakanyanya, uye yakaderera-yakaderera coefficient yekuwedzera kwemafuta (padhuze nesilicon zvinhu) inovimbisa kugadzikana kwedimensional munzvimbo dzepamusoro-tembiricha yekubatanidza, nepo iyo yakakwira-density zvinhu (semuenzaniso, silicon carbide kana specialty ceramics) inodzivirira kupenya kwegasi, kuchengetedza kuvimbika kwenguva refu. Aya maitiro pamwe chete anotsigira micron-level bonding kurongeka, uye anowedzera zvakanyanya chip kurongedza goho.

SiC Bonding Chuck

Iyo silicon carbide (SiC) yekubatanidza chuck ndeye musimboti gadziriso mune chip bonding maitiro, akagadzirirwa chaizvo adsorbing uye kuchengetedza wafers, kuve nechokwadi chekupedzisira-kugadzikana kuita pasi pepamusoro-tembiricha uye yakakwirira-kumanikidza bonding mamiriro. Yakagadzirwa kubva kune yakakwira-density silicon carbide ceramic (porosity <0.1%), inowana yunifomu adsorption simba kugovera (kutsauka <5%) kuburikidza nenanometer-level girazi polishing (kukasharara kwepamusoro Ra <0.1 μm) uye chaiyo gasi chiteshi grooves ((pore 0 μ μm) inodzivirira kukuvara kwepasi kana 5m μm, inodzivirira kukuvara kwepasi 0 μ-5 m-. Yayo yekupedzisira-yakaderera coefficient yekuwedzera kwemafuta (4.5 × 10⁻⁶/℃) inonyatso enderana neiyo yesilicon wafers, kuderedza kupisa-induced warpage. Yakasanganiswa nekuomarara kwepamusoro ( elastic modulus > 400 GPa) uye ≤1 μm flatness/parallelism, inovimbisa kubatanidza kurongeka kwechokwadi. Inoshandiswa zvakanyanya mu semiconductor packaging, 3D stacking, uye Chiplet kubatanidzwa, inotsigira yakakwirira-yekupedzisira kugadzira zvikumbiro zvinoda nanoscale chaiyo uye kugadzikana kwekupisa.

CMP Kukuya Disc

Iyo CMP yekukuya disc chinhu chakakosha chemakemikari mechanical polishing (CMP) midziyo, yakanyatsogadzirirwa kuchengetedza zvakachengeteka uye kudzikamisa wafers panguva yekumhanya kwekupenya, zvichiita kuti nanometer-level global planarization. Yakagadzirwa kubva pakuoma-kuoma, yakakwirira-density zvinhu (semuenzaniso, silicon carbide ceramics kana specialty alloys), inova nechokwadi cheyunifomu vacuum adsorption kuburikidza nemazvo-engineered gasi chiteshi grooves. Yayo girazi-yakakwenenzverwa nzvimbo (kufuratirwa/kufanana ≤3 μm) inovimbisa kusagadzikana-kusununguka kusangana nemawafer, nepo iyo yekupedzisira-yakaderera coefficient yekuwedzera kwemafuta (inofananidzwa nesilicon) uye yemukati yekutonhodza chiteshi, zvinobudirira kudzvanya deformation yekupisa. Inoenderana ne12-inch (750 mm dhayamita) mawafers, iyo disc inosimudzira diffusion bonding tekinoroji, kuti ive nechokwadi chekubatanidza isina musono uye kuvimbika kwenguva refu kwezvimiro zvematanho akawanda pasi pekupisa kwakanyanya uye kumanikidza, kuwedzera zvakanyanya CMP maitiro uye goho.

Customized akasiyana SiC Ceramics Zvikamu Sumo

Silicon Carbide (SiC) Square Mirror

Silicon Carbide (SiC) Square Mirror ndeye yakakwirira-chaiyo optical chikamu chakagadzirwa kubva advanced silicon carbide ceramic, yakanyatsogadzirirwa yepamusoro-yekupedzisira semiconductor yekugadzira michina senge lithography michina. Iyo inowana huremu hwekupedzisira-huremu, uye kuomarara kwakanyanya (elastic modulus> 400 GPa) kuburikidza neyakajeka lightweight dhizaini dhizaini (semuenzaniso, kuseri kwehuchi huchi hollowing), nepo yakadzikira zvakanyanya kupisa kwekuwedzera kwekuwedzera kwemafuta (≈4.5 × 10⁻⁶ tembiricha) inogonesa kudzikama/kudzika. Iyo girazi repamusoro, mushure mekupenya chaiko, inowana ≤1 μm kupfava/kufanana, uye yakasarudzika kupfeka kuramba (Mohs kuoma 9.5) inowedzera hupenyu hwesevhisi. Inoshandiswa zvakanyanya mu lithography machine workstations, laser reflectors, uye space telescopes uko kunonyanya kukosha uye kugadzikana kwakakosha.

Silicon Carbide (SiC) Air Floatation Guides

Silicon Carbide (SiC) Air Floatation Guides inoshandisa isina-inobata aerostatic kutakura tekinoroji, uko gasi rakadzvanywa rinogadzira micron-level remhepo firimu (kazhinji 3-20μm) kuti iite isingakweshe uye isina vibration-isina kufamba kwakatsetseka. Ivo vanopa kurongeka kwenanometric motion (yakadzokororwa kurongeka chaiko kusvika ± 75nm) uye sub-micron geometric chaiyo (kutwasuka ± 0.1-0.5μm, flatness ≤1μm) , inogoneswa neyakavharwa-loop mhinduro yekudzora ine chaiyo grating zviyero kana laser interferometers. The core silicon carbide ceramic material (sarudzo dzinosanganisira Coresic® SP/Marvel Sic series) inopa kuomarara kwepamusoro-(elastic modulus>400 GPa), ultra-low thermal expansion coefficient(4.0–4.5×10⁻⁶/K,inofananidzwa nesilicon densi, . Dhizaini yayo isingaremi ( density 3.1g/cm³, yechipiri chete kualuminium) inoderedza kufamba inertia, nepo kusarudzika kupfeka kuramba (Mohs kuomarara 9.5) uye kugadzikana kwemafuta kunovimbisa kuvimbika kwenguva refu pasi pekumhanya kwakanyanya (1m/s) uye yakakwirira-kumhanyisa (4G) mamiriro. Aya madhairekitori anoshandiswa zvakanyanya mu semiconductor lithography, wafer yekuongorora, uye yekupedzisira-chaiyo machining.

Silicon Carbide (SiC) Cross-Beams

Silicon Carbide (SiC) Cross-Beams ndiwo akakosha ekufambisa zvinhu zvakagadzirirwa semiconductor zvishandiso uye yakakwirira-yekupedzisira maindasitiri maapplication, anonyanya kushanda kutakura nhanho dzewafer uye kuvatungamira munzira dzakatarwa dzepamusoro-kumhanya, kwekupedzisira-chaizvo kufamba. Uchishandisa yakakwira-inoshanda silicon carbide ceramic (sarudzo dzinosanganisira Coresic® SP kana Marvel Sic dzakatevedzana) uye isina huremu dhizaini dhizaini, vanowana uremu hwekupedzisira-hwakaoma nekuoma kwepamusoro (elastic modulus> 400 GPa), pamwe neiyo yekupedzisira-yakaderera coefficient yekuwedzera kwekushisa 5 × 10/⁶ ⁶ ⁶ ⁶ ⁶ ⁶ yakakwira density (porosity <0.1%), kuvimbisa kugadzikana kwenanometric (kufuratira/parallelism ≤1μm) pasi pekupisa uye kushushikana kwemagetsi. Zvivakwa zvavo zvakabatanidzwa zvinotsigira kukurumidza-kumhanya uye kukurumidza-kumhanyisa mashandiro (semuenzaniso, 1m/s, 4G), zvichiita kuti zvive zvakanakira michina yelithography, mawafer ekuongorora masisitimu, uye kunyatsogadzira kugadzira, zvakanyanya kusimudzira kufamba kwakaringana uye simba remhinduro.

Silicon Carbide (SiC) Motion Zvikamu

Silicon Carbide (SiC) Motion Zvikamu zvikamu zvakakosha zvakagadzirirwa yakakwirira-chaiyo semiconductor motion masisitimu, uchishandisa yakakwirira-density SiC zvinhu (semuenzaniso, Coresic® SP kana Marvel Sic akatevedzana, porosity <0.1%) uye isina huremu dhizaini dhizaini kuti iwane ultra-lightness > 40 yakakwira Gdufflus huremu. Iine yekupedzisira-yakaderera coefficient yekuwedzera kwemafuta (≈4.5 × 10⁻⁶/℃), ivo vanovimbisa kugadzikana kwenanometric (kufuratira/parallelism ≤1μm) pasi pekuchinja kwemafuta. Izvi zvakasanganiswa zvivakwa zvinotsigira kukurumidza-kumhanya uye kukurumidza-kumhanyisa mashandiro (semuenzaniso, 1m/s, 4G), zvichiita kuti zvive zvakanakira michina yelithography, mawaferi ekuongorora masisitimu, uye kunyatsogadzira kugadzira, zvakanyanya kusimudzira kufamba kwakaringana uye simba remhinduro.

Silicon Carbide (SiC) Optical Path Plate

Iyo Silicon Carbide (SiC) Optical Path Plate ipuratifomu yepakati yakagadzirirwa maviri-optical-nzira masisitimu, mune wafer yekuongorora michina. Yakagadzirwa kubva kune yakakwirira-inoshanda silicon carbide ceramic, inowana Ultra-yakareruka (density ≈3.1 g/cm³) uye kuomarara kwakanyanya (elastic modulus> 400 GPa) kuburikidza neyakareruka dhizaini dhizaini, nepo iine yakawedzera-yakaderera coefficient ye ther. (≈4.5×10⁻⁶/℃) uye yakakwira density (porosity <0.1%), inovimbisa kugadzikana kwenanometric (kufuratirwa/parallelism ≤0.02mm) pasi pekupisa uye kuchinjika kwemuchina. Nehukuru hwayo hukuru hwehukuru (900 × 900mm) uye yakasarudzika mashandiro akazara, inopa iyo yakareba yakagadzikana yekumisikidza baseline ye optical masisitimu, inosimbisa zvakanyanya kuongorora uye kuvimbika. Inoshandiswa zvakanyanya mu semiconductor metrology, optical alignment, uye yakakwirira-chaiyo imaging masisitimu.

Graphite + Tantalum Carbide Coated Guide Ring

Iyo Graphite + Tantalum Carbide Coated Guide Ring chinhu chakakosha chakagadzirirwa silicon carbide (SiC) imwe crystal yekukura michina. Basa rayo repakati nderekunyatso kutungamira-yepamusoro-tembiricha gasi kuyerera, kuve nechokwadi chekufanana uye kugadzikana kwekushisa uye kuyerera minda mukati mekamuri yekuita. Yakagadzirwa kubva kune yakakwirira-kuchena graphite substrate (kuchena > 99.99%) yakavharwa neCVD-yakaiswa tantalum carbide (TaC) layer (inoputira kusachena kwemukati <5 ppm), inoratidza yakasarudzika thermal conductivity (≈120 W/m·K) (iine tembiricha yakanyanyisa kukwira 2200 ° C), zvinobudirira kudzivirira silicon vapor corrosion uye kudzvanyirira kusvibiswa kwetsvina. Iyo yekupfeka yakakura kufanana (kutsauka <3%, yakazara-nzvimbo yekuvhara) inovimbisa inowirirana gasi kutungamira uye yenguva refu yekuvimbika sevhisi, inosimudzira zvakanyanya kunaka uye goho reSiC single crystal kukura.

Silicon Carbide (SiC) Furnace Tube Abstract

Silicon Carbide (SiC) Vertical Furnace Tube

Silicon Carbide (SiC) Vertical Furnace Tube chinhu chakakosha chakagadzirirwa chepamusoro-tembiricha maindasitiri emidziyo, inonyanya kushanda sechubhu yekudzivirira yekunze, kuve nechokwadi chekugoverwa kwemafuta mukati mechoto pasi pemhepo, ine tembiricha yekushanda inosvika 1200 ° C. Yakagadzirwa kuburikidza ne3D kudhinda yakasanganiswa yekugadzira tekinoroji, ine hwaro hwezvinhu zvisina kuchena zvemukati <300 ppm, uye inogona kuve yakashongedzerwa neCVD silicon carbide coating, (kupfeka kusvibiswa <5 ppm). Kubatanidza high thermal conductivity (≈20 W/m·K) uye yakasarudzika yekushisa kugadzikana kugadzikana (kupokana nemafuta gradient> 800 ° C), inoshandiswa zvakanyanya mukupisa-kupisa maitiro senge semiconductor kupisa kupisa, photovoltaic zvinhu sintering, uye chaiyo yunifomu yeceramic kugadzirwa, inosimudzira zvakanyanya kwenguva refu-yemidziyo.

Silicon Carbide (SiC) Horizontal Furnace Tube

Silicon Carbide (SiC) Horizontal Furnace Tube chinhu chakakosha chakagadzirirwa maitiro ekupisa kwepamusoro, kushanda sechubhu inoshanda mumhepo ine okisijeni (reactive gasi), nitrogen (yekudzivirira gasi), uye inoteedzera hydrogen chloride, ine tembiricha inoshanda inosvika 1250 ° C. Yakagadzirwa kuburikidza ne3D kudhinda yakasanganiswa yekugadzira tekinoroji, ine hwaro hwezvinhu zvisina kuchena zvemukati <300 ppm, uye inogona kuve yakashongedzerwa neCVD silicon carbide coating, (kupfeka kusvibiswa <5 ppm). Kubatanidza high thermal conductivity (≈20 W/m·K) uye yakasarudzika thermal shock kugadzikana (kudzivisa thermal gradients>800°C), yakanakira kuda semiconductor application senge oxidation, diffusion, uye nhete-firimu deposition, kuve nechokwadi chechimiro, kurongeka uye kurongeka kwakanyanyisa pasi pemamiriro ekunze.

SiC Ceramic Fork Arms Nhanganyaya

Semiconductor Manufacturing

Mukugadzira semiconductor wafer, SiC ceramic fork maoko anonyanya kushandiswa kuendesa uye kuisa wafers, anowanzo kuwanikwa mu:

Wafer Processing Equipment: Zvakadai sewafer makaseti uye mabhoti ekugadzira, anoshanda zvakatsiga mukupisa-kupisa uye corrosive process environments.
Lithography Machines: Inoshandiswa mune chaiyo zvikamu sematanho, madhairekitori, uye maoko erobhoti, uko kusimba kwavo kwakanyanya uye kuderera kwemafuta deformation inovimbisa nanometer-chikamu chekufamba chaiko.
Etching uye Diffusion Matanho: Kushanda seICP etching matireyi uye zvikamu zve semiconductor diffusion maitiro, kuchena kwavo kwepamusoro uye kuramba kwecorrosion kunodzivirira kusvibiswa mumakamuri ekugadzirisa.

Industrial Automation uye Robotics

SiC ceramic forogo maoko zvinhu zvakakosha mumarobhoti ekushanda eindasitiri uye otomatiki michina:

Robotic End Effects: Inoshandiswa kubata, kuungana, uye kuita chaiko. Zvimiro zvavo zvisingaremi (density ~ 3.21 g/cm³) inosimudzira kumhanya kwerobhoti uye kugona, nepo kuomarara kwavo kwakanyanya (Vickers kuomarara ~ 2500) kunovimbisa kusarudzika kupfeka kuramba.
Automated Production Lines: Muzviitiko zvinoda yakakwirira-frequency, yakakwirira-chaiyo kubata (semuenzaniso, e-commerce matura, fekitori yekuchengetedza), SiC fork maoko anovimbisa kwenguva yakareba yakagadzikana kuita.

Aerospace uye New Energy

Munzvimbo dzakanyanyisa, SiC ceramic forogo maoko anowedzera kupikisa kwavo kwepamusoro-tembiricha, corrosion resistance, uye kupisa kutyisa kuramba:

Aerospace: Inoshandiswa muzvikamu zvakakosha zve spacecraft uye drones, uko huremu hwavo uye hurefu-simba zvivakwa zvinobatsira kudzikisa huremu uye kuwedzera mashandiro.
Simba Idzva: Inoshandiswa mumidziyo yekugadzira yeindasitiri yephotovoltaic (semuenzaniso, diffusion furnaces) uye seyakanyatso dhizaini zvikamu mukugadzira lithium-ion bhatiri.

High-Temperature Industrial Processing

SiC ceramic forogo maoko anogona kumira tembiricha inodarika 1600 ° C, ichiita kuti ive yakakodzera:

Metallurgy, Ceramics, uye Glass Industries: Inoshandiswa mune yakakwirira-tembiricha manipulators, setter maplate, uye push plates.
Nuclear Energy: Nekuda kwekuramba kwawo kwemwaranzi, akakodzera kune zvimwe zvikamu mumanyukireya reactor.

Midziyo Yezvokurapa

Mundima yekurapa, SiC ceramic forogo maoko anonyanya kushandiswa ku:

Marobhoti Ezvokurapa uye Zvishandiso Zvekuvhiya: Inokosheswa kuenderana kwavo nehupenyu, kusagadzikana kwekuora, uye kugadzikana munzvimbo dzesterilization.

SiC Coating Overview

SiC coating ndeye dense uye inopfeka-inodzivirira silicon carbide layer yakagadzirwa kuburikidza neChemical Vapor Deposition (CVD) maitiro. Uku kupfekedza kunoita basa rakakosha mune semiconductor epitaxial maitiro nekuda kwekukwirira kwayo kwecorrosion, kugadzikana kwekushisa kwakanyanya, uye kutaridzika kwekupisa kwemafuta (kubvira ku120-300 W/m·K). Tichishandisa tekinoroji yeCVD yepamberi, isu tinoisa zvakafanana yakaonda yeSiC layer pane graphite substrate, tichiona kuchena kwepamusoro uye kusimba kwechimiro.

Uyezve, SiC-yakavharwa vatakuri vanoratidza yakasarudzika mechini simba uye hupenyu hurefu hwebasa. Iwo akagadzirwa kuti akwanise kutsungirira tembiricha yepamusoro (inokwanisa kushanda kwenguva refu pamusoro pe1600 ° C) uye nehutsinye hwemakemikari mamiriro akafanana nemaitiro ekugadzira semiconductor. Izvi zvinovaita sarudzo yakanaka yeGaN epitaxial wafers, kunyanya mune yakakwirira-frequency uye yakakwirira-simba maapplication akadai se5G base zviteshi uye RF yekumberi-yekupedzisira magetsi amplifiers.

Data yeSiC Coating

Typical properties	Units	Values
Chimiro		FCC β chikamu
Orientation	Chikamu (%)	111 zvakasarudzwa
Bulk density	g/cm³	3.21
Kuoma	Vickers kuoma	2500
Heat Capacity	J·kg-1 ·K-1	640
Kuwedzera kupisa kwe100–600 °C (212–1112 °F)	10-6K-1	4.5
Young's Modulus	Gpa (4pt bend, 1300 ℃)	430
Saizi yezviyo	μm	2~10
Sublimation Temperature	℃	2700
Felexural Strength	MPa (RT 4-poindi)	415
Thermal conductivity	(W/mK)	300

Silicon Carbide Ceramic Structural Parts Overview

Silicon carbide ceramic structural components inotorwa kubva kusilicon carbide zvidimbu zvakabatanidzwa pamwechete kuburikidza nekupisa. Iwo anoshandiswa zvakanyanya mumotokari, muchina, makemikari, semiconductor, space tekinoroji, microelectronics, uye simba zvikamu, zvichiita basa rakakosha mukushandisa kwakasiyana mukati meindastiri aya. Nekuda kwezvimiro zvavo zvakasarudzika, silicon carbide ceramic zvimiro zvemukati zvave chinhu chakanakira mamiriro ezvinhu akaomarara anosanganisira kupisa kwakanyanya, kukwira kwepamusoro, ngura, uye kupfeka, kuunza kushanda kwakavimbika uye hupenyu hurefu munzvimbo dzakaoma dzekushanda.

Izvi zvikamu zvinozivikanwa nekuda kwekunaka kwazvo kwekupisa kwekushisa, izvo zvinofambisa kufamba kwakanaka kwekupisa mumhando dzakasiyana-siyana dzekushisa kwepamusoro. Iyo inherent thermal shock resistance yesilicon carbide ceramics inovagonesa kumira nekukurumidza kuchinja kwekushisa pasina kutsemuka kana kutadza, kuve nechokwadi chekuvimbika kwenguva refu munzvimbo dzine simba dzekupisa.

Iyo innate oxidation kuramba kwesilicon carbide ceramic structural components inoita kuti ive yakakodzera kushandiswa mumamiriro akafumurwa kune yakanyanya tembiricha uye oxidative atmosphere, inovimbisa kushanda kwakasimba uye kuvimbika.

SiC Seal Zvikamu Overview

Zvisimbiso zveSiC isarudzo yakanakira nzvimbo dzakaoma (senge tembiricha yakakwira, kudzvanywa kwepamusoro, corrosive media, uye kukurumidza kupfeka) nekuda kwekuoma kwadzo, kusapfeka kusagadzika, kushivirira kwepamusoro (zvisinei nematembiricha anosvika 1600 ° C kana 2000 ° C), uye kusagadzikana kwekuora. Kupisa kwavo kwepamusoro kunobatsira kupisa kupisa kwakanaka, nepo kudzika kwadzo kudiki uye kuzvigadzika zvivakwa zvinowedzera kuve nechokwadi chekuisa chisimbiso uye hupenyu hurefu hwesevhisi pasi pemamiriro ekushanda zvakanyanya. Aya maitiro anoita kuti zvisimbiso zveSiC zvishandiswe zvakanyanya mumaindasitiri akadai sepetrochemicals, migodhi, semiconductor kugadzira, tsvina yemvura, uye simba, zvinoderedza zvakanyanya mutengo wekugadzirisa, kuderedza nguva, uye kusimudzira mashandiro emidziyo nekuchengetedza.

SiC Ceramic Plates Pfupi

Silicon Carbide (SiC) mahwendefa eceramic anozivikanwa nekuoma kwawo kwakasiyana (Mohs kuoma kusvika 9.5, yechipiri chete kudhaimondi), yakanakisa kupisa kwemafuta (kupfuura zvakanyanya maceramics ekugadzirisa kupisa kwakanaka), uye inoshamisa inertness yekemikari uye kupisa kutyisa kuramba, (zvisinei neakasimba maasidhi, alkali tembiricha, alkali tembiricha). Izvi zvivakwa zvinovimbisa kugadzikana kwechimiro uye kuita kwakavimbika munzvimbo dzakanyanyisa (semuenzaniso, tembiricha yakakwira, abrasion, uye corrosion), uku uchiwedzera hupenyu hwesevhisi uye kuderedza zvinodiwa zvekugadzirisa.

SiC ceramic mahwendefa anoshandiswa zvakanyanya muminda yepamusoro-inoshanda:

•Abrasives neMidziyo yekukuya—: Kushandisa kuomarara kwepamusoro pakugadzira mavhiri ekukuya nematurusi ekupukuta, kuwedzera kurongeka nekusimba munzvimbo dzinopwanya.

• Refractory Materials: Kushanda sembatya dzechoto uye zvikamu zvembambo, kuchengetedza kugadzikana kuri pamusoro pe1600°C kuvandudza kugona kwekupisa uye kuderedza mari yekugadzirisa.

• Semiconductor Indasitiri — Kushanda sema substrates emagetsi emagetsi epamusoro-simba (semuenzaniso, magetsi diode uye RF amplifiers), inotsigira high-voltage uye yakakwirira-tembiricha mashandiro kuti awedzere kuvimbika uye kushanda nesimba.

•Kukanda nekunyungudutsa: Kutsiva zvinhu zvechinyakare mukugadzirisa simbi kuti ive nechokwadi chekufambisa kupisa kwakanaka uye kusagadzikana kwemakemikari ekuora, kuwedzera metallurgical kunaka uye mutengo-kushanda.

SiC Wafer Boat Abstract

XKH SiC ceramic zvikepe zvinounza kugadzikana kwepamusoro kwekupisa, kusagadzikana kwemakemikari, kunyatsoita engineering, uye kugona kwehupfumi, ichipa yakakwirira-inoshanda inotakura mhinduro yekugadzira semiconductor. Ivo vanosimudzira zvakanyanya kuchengetedzwa kwewafer, kuchena, uye kugona kugadzira, vachivaita zvinhu zvakakosha mukugadzirwa kwewafer yepamberi.

SiC ceramic mabhoti Maitiro:

•Exceptional Thermal Stability & Mechanical Strength: Yakagadzirwa kubva pasilicon carbide (SiC) ceramic, inoshingirira tembiricha inodarika 1600°C, uku ichichengetedza kuvimbika kwechimiro pasi pekunyanya kupisa bhasikoro. Yayo yakaderera yekupisa yekuwedzera coefficient inoderedza deformation uye kutsemuka, kuve nechokwadi chechokwadi uye kuchengetedzwa kwewafer panguva yekubata.

•Kuchena Kwakakwirira & Kuramba Kwemakemikari: Inoumbwa ne-ultra-high-purity SiC, inoratidza kuramba kwakasimba kumaasidhi, alkali, uye plasmas inoparadza. Iyo inert surface inodzivirira kusvibiswa uye ion leaching, kuchengetedza wafer kuchena uye kunatsiridza goho remudziyo.

• Precision Engineering & Customization : Yakagadzirwa pasi pekushivirira kwakasimba kuti itsigire masaizi akasiyana siyana (eg, 100mm kusvika 300mm), ichipa kupfava kwepamusoro, yunifomu ye slot dimensions, nekudzivirira kumucheto. Customizable madhizaini anochinjika kune otomatiki michina uye chaiwo maturusi zvinodiwa.

• Hurefu Hweupenyu & Mutengo-Kushanda : Zvichienzaniswa nemidziyo yechinyakare (semuenzaniso, quartz, alumina), SiC ceramic inopa yakakwira mechaniki simba, kuomarara kwekutsemuka, uye kupisa kwekuvhunduka, kuwedzera zvakanyanya hupenyu hwesevhisi, kuderedza kutsiva frequency, uye kudzikisa mutengo wakazara wevaridzi uku uchiwedzera kugadzirwa kwekugadzira.

SiC ceramic mabhoti Applications:

SiC ceramic mabhoti anoshandiswa zvakanyanya pamberi-yekupedzisira semiconductor maitiro, anosanganisira:

• Deposition Processes: Zvakadai seLPCVD (Low-Pressure Chemical Vapor Deposition) uye PECVD (Plasma-Enhanced Chemical Vapor Deposition).

• High-Temperature Treatments: Kusanganisira thermal oxidation, annealing, diffusion, uye ion implantation.

•Kunyorova & Kuchenesa Matanho: Wafer yekuchenesa uye makemikari ekubata matanho.

Inoenderana nezvose zviri mumhepo uye vacuum process nharaunda,

iwo akanakira machira ari kutsvaga kudzikisira njodzi yekusvibiswa uye kuvandudza kugona kwekugadzira.

Zvikamu zveSiC Wafer Boat:

Technical Properties
Index	Unit	Value
Zita rezvinhu		Rection Sintered Silicon Carbide	Pressureless Sintered Silicon Carbide	Recrystallized Silicon Carbide
Composition		RBSiC	SSiC	R-SiC
Bulk Density	g/cm3	3	3.15 ± 0.03	2.60-2.70
Flexural Strength	MPa (kpsi)	338(49)	380(55)	80-90 (20°C) 90-100(1400°C)
Compressive Strength	MPa (kpsi)	1120(158)	3970(560)	> 600
Kuoma	Knoop	2700	2800	/
Breaking Tenacity	MPa m1/2	4.5	4	/
Thermal Conductivity	W/mk	95	120	23
Coefficient of Thermal Expansion	10^-6.1/°C	5	4	4.7
Specific Heat	Joule/g 0k	0.8	0.67	/
Max tembiricha mumhepo	℃	1200	1500	1600
Elastic Modulus	Gpa	360	410	240

SiC Ceramics Yakasiyana-siyana Tsika Zvikamu Zviratidzi

SiC Ceramic Membrane

SiC ceramic membrane ndeye advanced filtration solution yakagadzirwa kubva kusilicon carbide yakachena, iine yakasimba-matatu-layer chimiro (rutsigiro tsigiro, shanduko dhizaini, uye yekuparadzanisa membrane) inogadzirwa kuburikidza nepamusoro-tembiricha sintering maitiro. Iyi dhizaini inovimbisa yakasarudzika mechini simba, chaiyo pore saizi kugovera, uye kusimba kwakasimba. Iyo inokunda mune akasiyana maindasitiri ekushandisa nekunyatso kupatsanura, kuisa pfungwa, uye kuchenesa zvinwiwa. Kushandiswa kwakakosha kunosanganisira kurapwa kwemvura netsvina (kubvisa zvakamisikidzwa kuoma, mabhakitiriya, uye zvinosvibisa organic), kugadzira chikafu nechinwiwa (kujekesa uye kuisa mvura mujusi, mukaka, uye zvinwiwa zvakaviriswa), mashandiro emishonga uye biotechnology (kuchenesa biofluids nepakati), kugadzirwa kwemakemikari (kusefa mvura inoparadza uye inogadzirwa nemafuta emvura uye inogadzirwa nemafuta emvura). kubvisa tsvina).

SiC Pipes

SiC (silicon carbide) machubhu ndeyepamusoro-inoshanda zveceramic zvikamu zvakagadzirirwa semiconductor choto masisitimu, akagadzirwa kubva kumusoro-kuchena kwakachena-grained silicon carbide kuburikidza nehunyanzvi hwekuita sintering. Ivo vanoratidza yakasarudzika yekupisa conductivity, yakakwirira-tembiricha kugadzikana (zvisinei nepamusoro pe1600 ° C), uye kemikari corrosion resistance. Kudzikira kwavo kwekuwedzera kwemafuta ekuwedzera uye yakakwira mechani simba inovimbisa kugadzikana kwedimensional pasi pekunyanya kupisa bhasikoro, zvinobudirira kudzikisira kupisa kwekushushikana uye kupfeka. SiC machubhu akakodzera kudhizaina mavira, oxidation mavira, uye LPCVD/PECVD masisitimu, achigonesa kugovera tembiricha yakafanana uye yakagadzikana mamiriro ekuita kudzikisa hurema hwewafer uye kunatsiridza nhete-firimu deposition homogeneity. Pamusoro pezvo, iyo dense, isina-porous dhizaini uye makemikari inertness yeSiC inodzivisa kukukurwa kubva kumagasi anoshanda akadai seokisijeni, hydrogen, uye ammonia, kuwedzera hupenyu hwebasa uye kuve nechokwadi chehutsanana. SiC machubhu anogona kugadziridzwa saizi uye kukora kwemadziro, nekunyatso machining kuwana yakatsetseka yemukati nzvimbo uye yakakwira concentricity kutsigira laminar kuyerera uye yakaenzana yekupisa profiles. Kukwenenzvera kwepamusoro kana sarudzo dzekupotera kunowedzera kudzikisa kugadzirwa kwechikamu uye kuwedzera kusimba kwekuora, kusangana nezvinodiwa zvekugadzira semiconductor kunyatsoita uye kuvimbika.

SiC Ceramic Cantilever Paddle

Iyo monolithic dhizaini yeSiC cantilever blades inosimudzira zvakanyanya kusimba kwemechani uye kudziya kwekupisa uku ichibvisa majoini uye isina simba mapoinzi akajairika muzvinhu zvinoumbwa. Kumusoro kwadzo kwakakwenenzverwa kusvika pedyo-girazi kupera, kuderedza kugadzirwa kwezvinhu uye kusangana nemiyero yekuchenesa imba. Iyo inherent yemakemikari inertia yeSiC inodzivirira kubuda kunze, kuora, uye kusvibiswa kwemaitiro munzvimbo dzinoshanda (semuenzaniso, okisijeni, mupfu), kuve nechokwadi chekugadzikana uye kuvimbika mukupararira / oxidation maitiro. Kunyangwe kukurumidza kupisa bhasikoro, SiC inochengetedza kutendeseka kwechimiro, kuwedzera hupenyu hwesevhisi uye kuderedza kuchengetedza nguva. Huremu hwemhando yeSiC inogonesa kukurumidza kupindura kupisa, kukurumidza kupisa / kutonhora mitengo uye kunatsiridza kugadzirwa uye kushanda nesimba. Aya mashizha anowanikwa muhukuru hunogoneka (hunoenderana ne100mm kusvika 300mm + wafers) uye anochinjika kune akasiyana dhizaini echoto, achiendesa kunoenderana kuita mune ese kumberi-kumagumo uye kumashure-kumagumo semiconductor maitiro.

Alumina Vacuum Chuck Nhanganyaya

Al₂O₃ vacuum chucks maturusi akakosha mukugadzira semiconductor, achipa yakagadzikana uye yakanyatso tsigiro mumatanho akawanda:•Kuonda: Inopa yunifomu yerutsigiro panguva yekupfava kwewafer, kuve nechokwadi chepamusoro-chaiyo substrate kudzikiswa kuti iwedzere kupisa chip kupisa uye kushanda kwemudziyo.
•Dicing: Inopa adsorption yakachengeteka panguva yekudhiza kwewafer, kuderedza njodzi dzekukuvara uye kuve nechokwadi chekucheka kwakachena kwemachipi ega ega.
•Kuchenesa: Yayo yakatsetseka, yakafanana adsorption surface inogonesa kubviswa kwetsvina pasina kukuvadza mawafer panguva yekuchenesa.
•Kutakura: Inopa rubatsiro rwakavimbika uye rwakachengeteka panguva yekubata wafer uye kutakura, kuderedza njodzi dzekukuvadzwa uye kusvibiswa.

Al₂O₃ Vacuum Chuck Key Hunhu:

1.Uniform Micro-Porous Ceramic Technology
• Inoshandisa nano-upfu kugadzira pores yakagoverwa uye yakabatana, zvichiita kuti pave nepamusoro peporosity uye yakafanana dense chimiro chekuenderana uye yakavimbika wafer rutsigiro.

2.Exceptional Material Properties
-Yakagadzirwa kubva ku-ultra-pure 99.99% alumina (Al₂O₃), inoratidza:
• Thermal Properties : Kupisa kwepamusoro-kupikisa uye kunaka kwekushisa kwekushisa, kwakakodzera kune yakakwirira-tembiricha semiconductor nharaunda.
•Mechanical Properties: Kusimba kwepamusoro uye kuomarara kunosimbisa kusimba, kusapfeka, uye hupenyu hurefu hwesevhisi.
• Zvimwe Zvakanakira : High magetsi insulation and corrosion resistance, inochinjika kumhando dzakasiyana dzekugadzira.

3. Superior Flatness uye Parallelism•Inova nechokwadi chekubata kwewafer kwakaringana nekudzikama kwakakwirira uye parallelism, kuderedza njodzi dzekukuvadzwa uye kuve nechokwadi chekugadzirisa mhedzisiro. Yayo yakanaka kupenya kwemhepo uye yunifomu adsorption simba inowedzera kuwedzera kuvimbika kwekushanda.

Iyo Al₂O₃ vacuum chuck inosanganisa yepamberi micro-porous tekinoroji, yakasarudzika zvinhu zvivakwa, uye yakanyanya kurongeka, kutsigira yakakosha semiconductor maitiro, kuve nechokwadi chekushanda, kuvimbika, uye kusvibiswa kwekudzora mukati mekutetepa, dicing, kuchenesa, uye kutakura matanho.

Alumina Robot Arm & Alumina Ceramic End Effector Brief

Alumina (Al₂O₃) ceramic robhoti maoko zvinhu zvakakosha zvewafer kubata mukugadzira semiconductor. Ivo vanobata zvakananga mawafers uye vane basa rekufambisa chaiko uye kumira munzvimbo dzinoda senge vacuum kana kutonhora kwakanyanya. Kukosha kwavo kwakakosha kuri mukuona kuchengetedzwa kwewafer, kudzivirira kusvibiswa, uye kuvandudza mashandiro emidziyo uye goho kuburikidza neyakasiyana zvinhu zvinhu.

a-typical-wafer-transfer-robot_230226_副本

Feature Dimension	Detailed Description
Mechanical Properties	Yakakwirira-kuchena alumina (semuenzaniso,> 99%) inopa kuomarara kwakanyanya (Mohs kuomarara kusvika ku9) uye kuchinjika simba (kusvika 250-500 MPa), kuve nechokwadi chekupfeka kuramba uye kudzivirira deformation, nekudaro kuwedzera hupenyu hwebasa.
Electrical Insulation	Kudzivirira tembiricha yemumba inosvika 10¹⁵ Ω·cm uye simba rekudzivirira re15 kV/mm, zvinodzivirira kudzivirira kweelectrostatic discharge (ESD), kudzivirira mawafer anopfava kuti asakanganiswa nemagetsi.
Thermal Stability	Melting point yakakwira se2050 ° C, inogonesa kumira-yepamusoro-tembiricha maitiro (semuenzaniso, RTA, CVD) mukugadzira semiconductor. Low thermal yekuwedzera coefficient inotapudza warping uye inochengetedza kugadzikana pasi pekupisa.
Chemical Inertness	Inert kune mazhinji acids, alkalis, process magasi, uye ekuchenesa maajenti, kudzivirira kusvibiswa kwechidimbu kana kuburitswa kwesimbi ion. Izvi zvinogonesa kugadzirwa kwakachena uye kunodzivirira kusvibiswa kwewafer.
Zvimwe Zvakanakira	Mature processing tekinoroji inopa yakakwira mutengo-inoshanda; nzvimbo dzinogona kunyatsokwenenzverwa kusvika kuhushasha hwakaderera, zvichiwedzera kudzikisira njodzi dzechizvarwa.

Alumina ceramic robhoti maoko anonyanya kushandiswa pamberi-yekupedzisira semiconductor kugadzira maitiro, kusanganisira:

• Wafer Kubata uye Positioning : Kuendesa zvakachengetedzeka uye chaizvo uye chinzvimbo mawafers (semuenzaniso, 100mm kusvika 300mm+ saizi) munzvimbo yevacuum kana yakakwirira-yakachena inert inert gasi, kuderedza kukuvadzwa uye njodzi yekusvibiswa.

• High-Temperature Matanho: Zvakadai sekukurumidza kupisa kwekupisa (RTA), kemikari vapor deposition (CVD), uye plasma etching, kwavanochengetedza kugadzikana pasi pekupisa kwakanyanya, kuve nechokwadi chekuenderana uye goho.

•Automated Wafer Handling Systems: Yakabatanidzwa muwafer inobata marobhoti semapeji ekupedzisira, kuita otomatiki kufambisa kwewafer pakati pemidziyo, inosimudzira kugadzirwa kwakanaka.

Mhedziso

XKH inyanzvi muR&D uye kugadzirwa kweyakagadziridzwa silicon carbide (SiC) uye alumina (Al₂O₃) zvinhu zveceramic, zvinosanganisira maoko emarobhoti, cantilever paddles, vacuum chucks, wafer mabhoti, machubhu echoto, uye zvimwe zvikamu zvepamusoro-soro, kushumira semiconductors, simba idzva, nzvimbo yemhepo, uye indu. Isu tinoomerera kune chaiyo kugadzira, kwakasimba kudzora kwemhando, uye tekinoroji hunyanzvi, kusimudzira maitiro ekufambisa epamusoro (semuenzaniso, kusadzvanya sintering, reaction sintering) uye nzira dzemachining chaidzo (semuenzaniso, CNC kugaya, kupukuta) kuve nechokwadi chepamusoro-tembiricha kuramba, simba remuchina, makemikari inertness, uye dimensional accuracy. Isu tinotsigira kugadziridza kwakavakirwa padhirowa, ichipa mhinduro dzakagadzirirwa zviyero, maumbirwo, kupera kwepamusoro, uye mamakisi emidziyo kusangana nezvinodiwa nevatengi. Isu takazvipira kupa yakavimbika uye inoshanda zveceramic zvikamu zvepasirese-yekupedzisira kugadzira, kuwedzera mashandiro emidziyo uye kugona kugadzira kwevatengi vedu.

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