Kudzivirira silicon carbide kwenguva refu crystal furnace kukura 6/8/12inch inch SiC ingot crystal PVT method

Kudzivirira silicon carbide crystal furnace yakareba kukura 6/8/12inch inch SiC ingot crystal PVT method Mufananidzo Wakafarirwa

Tsananguro pfupi:

Chitofu chekusimudzira kukura kwesilicon carbide (PVT method, physical vapor transfer method) chinhu chakakosha pakukura kwesilicon carbide (SiC) single crystal ne high temperature sublimation-recrystallization principle. Iyi tekinoroji inoshandisa resistance heating (graphite heating body) kuti iite sublimate yeSiC raw material patembiricha yepamusoro ye2000~2500℃, uye iite recrystallize munzvimbo ine tembiricha yakaderera (seed crystal) kuti igadzire SiC single crystal yepamusoro (4H/6H-SiC). Iyi nzira yePVT ndiyo nzira huru yekugadzira SiC substrates ye6 inches zvichidzika, iyo inoshandiswa zvakanyanya mukugadzirira substrate ye power semiconductors (senge MOSFETs, SBD) uye radio frequency devices (GaN-on-SiC).

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Zvinhu zvirimo

Kushanda musimboti:

1. Kutakura zvinhu zvisina kugadzirwa: upfu hweSiC hwakachena kwazvo (kana kuti bhuroko) hwakaiswa pasi pechitofu chegraphite (nzvimbo inodziya zvakanyanya).

2. Nzvimbo isina chinhu: bvisa vharuvhu mukamuri yechoto (<10⁻³ mbar) kana bvisa gasi risina chinhu (Ar).

3. Kupisa kwakanyanya: kupisa kunodzivirira kusvika 2000 ~ 2500℃, SiC kuora kuita Si, Si₂C, SiC₂ nezvimwe zvikamu zvegasi.

4. Kutapurirana kwechikamu chegasi: kukwira kwekushisa kunoendesa kupararira kwechinhu chechikamu chegasi kunzvimbo yekupisa kwakaderera (kumagumo embeu).

5. Kukura kwekristaro: Gas phase inodzokororwa pamusoro peSeed Crystal uye inokura ichienda kwairi ichitevedza C-axis kana A-axis.

Zvikamu zvikuru:

1. Kupisa kwakanyanya: 20~50℃/cm (kudzora kukura kwechinhu uye huwandu hwechikanganiso).

2. Kudzvanywa: 1 ~ 100mbar (kudzvanywa kwakaderera kuderedza kuiswa kwetsvina).

3.Kukura kwechinhu: 0.1~1mm/awa (zvichikanganisa kunaka kwekristaro uye kushanda zvakanaka kwechinhu).

Zvinhu zvikuru:

(1) Hunhu hwekristaro
Kuwanda kwembeu kwakaderera: kuwanda kwe microtubule <1 cm⁻², kuwanda kwe dislocation 10³~10⁴ cm⁻² (kuburikidza nekugadzirisa mbeu uye kudzora maitiro).

Kudzora mhando yepolycrystalline: inogona kukura 4H-SiC (yakanyanya), 6H-SiC, 4H-SiC chikamu >90% (inofanira kudzora nemazvo tembiricha uye gas phase stoichiometric ratio).

(2) Kushanda kwemidziyo
Kugadzikana kwekupisa kwakanyanya: graphite kupisa tembiricha yemuviri >2500℃, muviri wechoto unogamuchira dhizaini yekudzivirira yakawanda-yakagadzika (senge graphite felt + bhachi rakatonhorerwa nemvura).

Kudzora kufanana: Kuchinja-chinja kwekushisa kweAxial/radial kwe ±5 ° C kunoita kuti dhayamita yekristaro igare yakafanana (6-inch substrate thickness deviation <5%).

Dhigirii rekushandisa otomatiki: Sisitimu yekudzora yakabatanidzwa yePLC, kutarisa tembiricha, kumanikidzwa uye mwero wekukura panguva chaiyo.

(3) Zvakanakira tekinoroji
Kushandiswa zvakanyanya kwezvinhu: mwero wekushandurwa kwezvinhu zvisina kucheneswa >70% (zviri nani pane nzira yeCVD).

Kuenderana kwehukuru hwakakura: Kugadzirwa kwemasendimita matanhatu kwawanikwa, masendimita masere ari muchikamu chekugadzirwa.

(4) Kushandiswa kwesimba uye mutengo
Simba rinoshandiswa nechoto chimwe chete i300~800kW·h, zvichiita kuti ive 40%~60% yemari yekugadzira SiC substrate.

Mari inoshandiswa mumidziyo yakakwira (1.5M 3M payuniti imwe neimwe), asi mutengo weyuniti substrate wakaderera pane nzira yeCVD.

Zvishandiso zvikuru:

1. Magetsi emagetsi: SiC MOSFET substrate ye inverter yemotokari yemagetsi uye inverter ye photovoltaic.

2. Midziyo yeRf: 5G base station GaN-on-SiC epitaxial substrate (kunyanya 4H-SiC).

3. Midziyo yezvakatipoteredza zvakanyanya: masensa ekupisa kwakanyanya uye kumanikidzwa kwakanyanya emidziyo yemuchadenga neyesimba renyukireya.

Magadzirirwo ehunyanzvi:

Tsanangudzo	Zvidimbu
Zviyero (L × W × H)	2500 × 2400 × 3456 mm kana kugadzirisa
Dhayamita yeChipupuriro	900 mm
Kumanikidzwa Kwekupedzisira Kwevacuum	6 × 10⁻⁴ Pa (mushure memaawa 1.5 emuchina wekuputira mvura)
Mwero wekudonha kwemvura	≤5 Pa/12h (kubika-kunze)
Dhayamita yemugodhi wekutenderera	50 mm
Kumhanya Kwekutenderera	0.5–5 rpm
Nzira yekudziyisa	Kupisa kunodzivirira magetsi
Kupisa Kwemoto Wepamusoro	2500°C
Simba rekudziyisa	40 kW × 2 × 20 kW
Kuyera Tembiricha	Piromita yeinfrared ine mavara maviri
Nzvimbo yekupisa	900–3000°C
Kururama kweTembiricha	±1°C
Kudzvanywa Kwemhando Yekudzvanyirira	1–700 mbar
Kururama Kwekudzora Kumanikidzwa	1–10 mbar: ±0.5% FS; 10–100 mbar: ±0.5% FS; 100–700 mbar: ±0.5% FS
Rudzi rweKushanda	Sarudzo dzekuchengetedza dzinoiswa pasi, dzinoshandiswa nemaoko/dzinogadzirwa otomatiki
Zvimwe Zvisarudzo	Kuyerwa kwekupisa kaviri, nzvimbo dzakawanda dzekupisa

Masevhisi eXKH:

XKH inopa basa rese reSiC PVT furnace, kusanganisira kugadzirisa michina (kugadzira nzvimbo yekupisa, kudzora otomatiki), kugadzira nzira (kudzora chimiro chekristaro, kugadzirisa zvikanganiso), kudzidziswa kwehunyanzvi (kushanda nekugadzirisa) uye rutsigiro rwekutengeswa mushure mekutengesa (kutsiva zvikamu zvegraphite, kugadzirisa nzvimbo yekupisa) kubatsira vatengi kuwana kugadzirwa kwekristaro yemhando yepamusoro. Isu tinopawo masevhisi ekuvandudza nzira kuti tirambe tichivandudza goho rekristaro uye kukura zvakanaka, nenguva yakajairika yemwedzi 3-6.