SiC substrate Dia200mm 4H-N uye HPSI Silicon carbide

4H-N neHPSI imhando ye silicon carbide (SiC), ine chimiro che crystal lattice chine mayuniti ane hexagonal akaumbwa nemaatomu mana ekabhoni ne silicon mana. Chimiro ichi chinopa zvinhu izvi kufamba kwema electron kwakanaka uye simba rekupwanyika kwemagetsi. Pakati pema polytype ese eSiC, 4H-N neHPSI zvinoshandiswa zvakanyanya mumunda wemagetsi emagetsi nekuda kwekufamba kwayo kwema electron nemaburi uye kufambisa kwakawanda kwemafuta.

Kubuda kwe 8inch SiC substrates kunomiririra kufambira mberi kukuru muindasitiri ye power semiconductor. Zvinhu zve semiconductor zvechinyakare zve silicon-based zvinowana kudzikira kukuru mukushanda mumamiriro ezvinhu akaoma akadai sekupisa kwakanyanya uye voltage yakakwira, nepo SiC substrates dzichigona kuchengetedza kushanda kwadzo kwakanaka. Zvichienzaniswa ne substrates diki, 8inch SiC substrates dzinopa nzvimbo yakakura yekugadzirisa chimwe chinhu, izvo zvinoreva kuti kugadzirwa kwacho kwakakwira uye mitengo yakaderera, zvakakosha pakufambisa maitiro ekutengesa tekinoroji yeSiC.

Tekinoroji yekukura kwe 8inch silicon carbide (SiC) substrates inoda kunyatsojeka uye kuchena kwakanyanya. Hunhu hwe substrate hunokanganisa zvakananga mashandiro emidziyo inotevera, saka vagadziri vanofanirwa kushandisa matekinoroji epamusoro kuti vave nechokwadi chekuti crystalline yakakwana uye defect density yakaderera ye substrates. Izvi zvinowanzo sanganisira maitiro akaomarara e chemical vapor deposition (CVD) uye matekiniki chaiwo ekukura kwe crystal nekucheka. 4H-N ne HPSI SiC substrates dzinonyanya kushandiswa mumunda wemagetsi emagetsi, senge mumagetsi anochinja-chinja, traction inverters yemotokari dzemagetsi, uye masisitimu esimba rinodzokororwa.

Tinogona kupa 4H-N 8inch SiC substrate, ma grade akasiyana e substrate stock wafers. Tinogonawo kuronga kugadzirisa zvinoenderana nezvamunoda. Tinokugamuchirai!